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SiC Epitaxial Wafer ee Qalabka Korontada - 4H-SiC, Nooca N, Cufnaanta Cilad Hoose

SiC Epitaxial Wafer ee Qalabka Korontada - 4H-SiC, Nooca N, Cufnaanta Hoose ee Sawirka
  • SiC Epitaxial Wafer ee Qalabka Korontada - 4H-SiC, Nooca N, Cufnaanta Cilad Hoose
  • SiC Epitaxial Wafer ee Qalabka Korontada - 4H-SiC, Nooca N, Cufnaanta Cilad Hoose
  • SiC Epitaxial Wafer ee Qalabka Korontada - 4H-SiC, Nooca N, Cufnaanta Cilad Hoose

Sharaxaad Gaaban:

SiC Epitaxial Wafer waa udub dhexaadka aaladaha wax-qabadka sare ee casriga ah ee semiconductor, gaar ahaan kuwa loogu talagalay hawlgallada awoodda sare, soo noqnoqda sare, iyo heerkulka sare. Gaaban ee Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer wuxuu ka kooban yahay tayo sare leh, lakabka SiC epitaxial dhuuban oo ka korray substrate SiC ah oo badan. Isticmaalka tignoolajiyada SiC Epitaxial Wafer waxay si degdeg ah ugu fidaysaa baabuurta korantada, xadhkaha xariifka ah, nidaamyada tamarta dib loo cusboonaysiin karo, iyo hawada hawada sare sababtoo ah sifooyinka jidheed iyo kuwa elektiroonigga ah ee sarreeya marka la barbar dhigo waferrada silikoon-ku-salaysan ee caadiga ah.


Astaamaha

Jaantus faahfaahsan

SiC Epitaxial Wafer-4
SiC Epitaxial Wafer-6 - 副本

Hordhac

SiC Epitaxial Wafer waa udub dhexaadka aaladaha wax-qabadka sare ee casriga ah ee semiconductor, gaar ahaan kuwa loogu talagalay hawlgallada awoodda sare, soo noqnoqda sare, iyo heerkulka sare. Gaaban ee Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer wuxuu ka kooban yahay tayo sare leh, lakabka SiC epitaxial dhuuban oo ka korray substrate SiC ah oo badan. Isticmaalka tignoolajiyada SiC Epitaxial Wafer waxay si degdeg ah ugu fidaysaa baabuurta korantada, xadhkaha xariifka ah, nidaamyada tamarta dib loo cusboonaysiin karo, iyo hawada hawada sare sababtoo ah sifooyinka jidheed iyo kuwa elektiroonigga ah ee sarreeya marka la barbar dhigo waferrada silikoon-ku-salaysan ee caadiga ah.

Mabaadi'da Farsamaynta ee SiC Epitaxial Wafer

Abuuritaanka SiC Epitaxial Wafer wuxuu u baahan yahay hannaan dhigasho kiimiko ah oo si heer sare ah loo xakameeyay (CVD). Lakabka epitaxial wuxuu caadi ahaan ku koray substrate SiC monocrystalline iyadoo la isticmaalayo gaas sida silane (SiH₄), propane (C₃H₈), iyo hydrogen (H₂) heerkulka ka sarreeya 1500 ° C. Heerkulka sare ee koritaanka epitaxial wuxuu xaqiijiyaa isku dheelitirnaanta crystalline aad u fiican iyo cilladaha ugu yar ee u dhexeeya lakabka epitaxial iyo substrate-ka.

Habka waxaa ku jira dhowr marxaladood oo muhiim ah:

  1. Diyaarinta Substrate: Waferka saldhigga ah ee SiC waa la nadiifiyaa oo la nadiifiyaa si ay u siman yihiin atomiga.

  2. Kobaca CVD: Dab-dhaliye nadiif ah oo sarreeya, gaasasku waxay ka falceliyaan si ay u dhigaan lakabka SiC ee hal-crystal ah ee substrate-ka.

  3. Xakamaynta Doping: Nooca N-nooca ama nooca P-doping ayaa la soo bandhigay inta lagu jiro epitaxy si loo gaaro sifooyinka korantada ee la rabo.

  4. Kormeerka iyo cabbirka: Mikroskoobyada indhaha, AFM, iyo kala-duwanaanta raajada ayaa loo isticmaalaa si loo xaqiijiyo dhumucda lakabka, xoojinta doping, iyo cufnaanta cilladda.

Mid kasta oo SiC Epitaxial Wafer ah si taxadar leh ayaa loola socdaa si loo ilaaliyo dulqaadka isku midka ah ee dhumucda dhumucda, fidsanaanta, iyo iska caabbinta. Awoodda lagu hagaajin karo cabbirradan waxay lama huraan u tahay MOSFET-yada korantada-sare, Schottky diodes, iyo aaladaha kale ee korontada.

Tilmaamid

Halbeegga Tilmaamid
Qaybaha Sayniska Qalabka, Substrate-ka Keliya Crystal
Noocyo badan 4H
Doping N Nooca
Dhexroorka 101 mm
Dulqaadka dhexroorka ± 5%
Dhumucda 0.35 mm
Dulqaadashada Dhumucda ± 5%
Dhererka Guriga aasaasiga ah 22 mm (± 10%)
TTV (Wadarta kala duwanaanshaha dhumucda) ≤10 µm
Warp ≤25µm
FWHM ≤30 Arc-sek
Dhamaystir dusha sare Rq ≤0.35 nm

Codsiyada SiC Epitaxial Wafer

Alaabooyinka SiC Epitaxial Wafer waa lama huraan dhinacyo badan:

  • Baabuurta Korontada (EVs)Qalabka ku salaysan SiC Epitaxial Wafer waxay kordhiyaan waxtarka tareenka waxayna yareeyaan miisaanka.

  • Tamarta la cusboonaysiin karo: Loo isticmaalo rogo-rogayaasha nidaamyada tamarta qoraxda iyo dabaysha.

  • Agabyada Korontada Warshadaha: Awood u beddelka-sare, heerkul sarreeya oo leh khasaare hoose.

  • Hawada iyo DifaacaKu habboon bay'ada qallafsan ee u baahan semiconductors adag.

  • Saldhigyada 5GQaybaha SiC Epitaxial Wafer waxay taageeraan cufnaanta sare ee codsiyada RF.

SiC Epitaxial Wafer wuxuu awood u siinayaa naqshado is haysta, beddelaad degdeg ah, iyo waxtarka beddelka tamarta sare marka loo eego waferrada silikoon.

Faa'iidooyinka SiC Epitaxial Wafer

Tiknoolajiyada SiC Epitaxial Wafer waxay bixisaa faa'iidooyin muhiim ah:

  1. Korontada Burburka Sare: Waxay u adkaysataa danab ilaa 10 jeer ka sarreeya Si wafers.

  2. Habdhaqanka kulaylka: SiC Epitaxial Wafer si dhakhso ah ayey u baabi'isaa kulaylka, taas oo u oggolaanaysa aaladaha inay ku shaqeeyaan qaboojiye iyo si la isku halleyn karo.

  3. Xawaaraha Bedelka Sare: Khasaaraha beddelka hooseeya wuxuu awood u siinayaa waxtarka sare iyo yaraynta.

  4. Bandgap ballaaran: Waxay xaqiijisaa xasiloonida tamarta sare iyo heerkulka.

  5. Adkeysiga Shayga: SiC waa kiimiko ahaan aan firfircoonayn oo si farsamaysan u xoog badan, oo ku habboon codsiyada dalabka.

Faa'iidooyinkan ayaa ka dhigaya SiC Epitaxial Wafer walxaha doorashada jiilka soo socda ee semiconductors.

FAQ: SiC Epitaxial Wafer

Q1: Waa maxay faraqa u dhexeeya waferka SiC iyo waferka SiC Epitaxial?
Waferka SiC waxa loola jeedaa substrate-ka badan, halka SiC Epitaxial Wafer uu ku jiro lakab si gaar ah loo koray oo loo isticmaalo samaynta qalabka.

Q2: Waa maxay dhumucyada loo heli karo lakabyada SiC Epitaxial Wafer?
Lakabyada Epitaxial waxay caadi ahaan u dhexeeyaan dhowr mikromitir ilaa in ka badan 100 μm, taas oo ku xidhan shuruudaha codsiga.

Q3: SiC Epitaxial Wafer ma ku habboon yahay jawiga heerkulka sare?
Haa, SiC Epitaxial Wafer waxay ku shaqayn kartaa xaalado ka sarreeya 600°C, oo si wayn uga sarreeya silikoon.

Q4: Waa maxay sababta cufnaanta cilladdu ay muhiim ugu tahay SiC Epitaxial Wafer?
Cufnaanta cilladda hoose waxay wanaajisaa waxqabadka qalabka iyo wax-soo-saarka, gaar ahaan codsiyada korantada sare.

Q5: Nooca N-nooca iyo P-nooca SiC Epitaxial Wafers labadaba diyaar ma yihiin?
Haa, labada noocba waxaa la soo saaray iyadoo la isticmaalayo gaaska dopant ee saxda ah inta lagu jiro habka epitaxial.

Q6: Waa maxay cabbirrada wafer-ka ayaa heerka u ah SiC Epitaxial Wafer?
Dhexrooryada caadiga ah waxaa ka mid ah 2-inch, 4-inch, 6-inch, iyo 8-inch oo sii kordheysa oo loogu talagalay soo saarista mugga sare.

Q7: Sidee buu SiC Epitaxial Wafer u saameeyaa qiimaha iyo waxtarka?
Iyadoo markii hore uu ka qaalisan yahay silikoon, SiC Epitaxial Wafer wuxuu yareeyaa cabbirka nidaamka iyo lumitaanka awoodda, hagaajinta wadarta waxtarka qiimaha muddada fog.

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