English

Wafer Epitaxial SiC ah oo loogu talagalay Qalabka Korontada - 4H-SiC, N-nooca, Cufnaanta Cilladaha Yar

Wafer Epitaxial SiC ah oo loogu talagalay Qalabka Korontada - 4H-SiC, N-nooca, Cufnaanta Yar ee Cufnaanta Sawirka La Soo Bandhigay
  • Wafer Epitaxial SiC ah oo loogu talagalay Qalabka Korontada - 4H-SiC, N-nooca, Cufnaanta Cilladaha Yar
  • Wafer Epitaxial SiC ah oo loogu talagalay Qalabka Korontada - 4H-SiC, N-nooca, Cufnaanta Cilladaha Yar
  • Wafer Epitaxial SiC ah oo loogu talagalay Qalabka Korontada - 4H-SiC, N-nooca, Cufnaanta Cilladaha Yar

Sharaxaad Gaaban:

Wafer-ka Epitaxial ee SiC waa udub-dhexaadka aaladaha semiconductor-ka ee waxqabadka sare leh, gaar ahaan kuwa loogu talagalay hawlgallada awoodda sare, soo noqnoqoshada sare, iyo heerkulka sare. Marka loo eego Silicon Carbide Epitaxial Wafer, Wafer-ka Epitaxial ee SiC wuxuu ka kooban yahay lakab epitaxial oo tayo sare leh oo khafiif ah oo SiC ah oo lagu beero dusha sare ee SiC substrate-ka badan. Isticmaalka tignoolajiyada SiC Epitaxial Wafer ayaa si xawli ah ugu fidaysa gawaarida korontada ku shaqeeya, shabakadaha caqliga badan, nidaamyada tamarta la cusboonaysiin karo, iyo hawada sare sababtoo ah sifooyinkeeda jireed iyo elektaroonik ee sarreeya marka la barbar dhigo wafer-ka caadiga ah ee ku salaysan silicon.


Astaamaha

Jaantus Faahfaahsan

Wafer Epitaxial-4 SiC
SiC Epitaxial Wafer-6 - 副本

Hordhac

Wafer-ka Epitaxial ee SiC waa udub-dhexaadka aaladaha semiconductor-ka ee waxqabadka sare leh, gaar ahaan kuwa loogu talagalay hawlgallada awoodda sare, soo noqnoqoshada sare, iyo heerkulka sare. Marka loo eego Silicon Carbide Epitaxial Wafer, Wafer-ka Epitaxial ee SiC wuxuu ka kooban yahay lakab epitaxial oo tayo sare leh oo khafiif ah oo SiC ah oo lagu beero dusha sare ee SiC substrate-ka badan. Isticmaalka tignoolajiyada SiC Epitaxial Wafer ayaa si xawli ah ugu fidaysa gawaarida korontada ku shaqeeya, shabakadaha caqliga badan, nidaamyada tamarta la cusboonaysiin karo, iyo hawada sare sababtoo ah sifooyinkeeda jireed iyo elektaroonik ee sarreeya marka la barbar dhigo wafer-ka caadiga ah ee ku salaysan silicon.

Mabaadi'da Sameynta ee Wafer-ka Epitaxial-ka ee SiC

Abuuritaanka Wafer Epitaxial SiC waxay u baahan tahay hab-raac kaydin uumi kiimiko oo aad loo xakameeyey (CVD). Lakabka epitaxial waxaa badanaa lagu beeraa substrate monocrystalline SiC iyadoo la adeegsanayo gaasas sida silane (SiH₄), propane (C₃H₈), iyo hydrogen (H₂) heerkul ka badan 1500°C. Kobaca epitaxial ee heerkulka sare wuxuu hubiyaa isku-xidhnaan kristalin oo heer sare ah iyo cillado yar oo u dhexeeya lakabka epitaxial iyo substrate-ka.

Hawshu waxay ka kooban tahay dhowr marxaladood oo muhiim ah:

  1. Diyaarinta Substrate-ka: Wafer-ka salka ah ee SiC waa la nadiifiyaa oo la simeeyaa si siman.

  2. Kobaca CVD: Fal-gale saafi ah oo sarreeya, gaasasku waxay falceliyaan si ay lakabka SiC ee keli ah ugu shubaan substrate-ka.

  3. Xakamaynta Dawooyinka: Daawaynta nooca N-nooca ama nooca P-nooca ayaa la soo bandhigaa inta lagu jiro epitaxy si loo gaaro sifooyinka korantada ee la rabo.

  4. Kormeerka iyo METrolojiga: Mikroskoobka indhaha, AFM, iyo kala-soocidda raajada X-ray ayaa loo isticmaalaa in lagu xaqiijiyo dhumucda lakabka, isku-darka daawada, iyo cufnaanta cilladaha.

Wafer kasta oo SiC Epitaxial ah ayaa si taxaddar leh loola socdaa si loo ilaaliyo dulqaad adag oo ku saabsan isku mid ahaanshaha dhumucda, fidsanaanta dusha sare, iyo iska caabinta. Awoodda lagu hagaajin karo xuduudahan ayaa lagama maarmaan u ah MOSFET-yada danab sare leh, diodes-ka Schottky, iyo aaladaha kale ee korontada.

Faahfaahinta

Halbeegga Faahfaahinta
Qaybaha Sayniska Agabka, Substrate-yada Keli ah ee Crystal-ka ah
Nooc polytype ah 4H
Dawaynta Nooca N
Dhexroorka 101 mm
Dulqaadka Dhexroorka ± 5%
Dhumucda 0.35 mm
Dulqaad dhumuc weyn ± 5%
Dhererka Fidsan ee Aasaasiga ah 22 mm (± 10%)
TTV (Isbeddelka Guud ee Dhumucda) ≤10 µm
Duub ≤25 µm
FWHM ≤30 Qaanso-ilbiriqsi
Dhammaadka Dusha Sare Rq ≤0.35 nm

Adeegsiga Wafer-ka Epitaxial-ka ee SiC

Badeecadaha SiC Epitaxial Wafer waa lama huraan qaybo badan:

  • Gawaarida Korontada (EVs)Qalabka ku salaysan SiC Epitaxial Wafer wuxuu kordhiyaa hufnaanta tareenka awoodda leh wuxuuna yareeyaa miisaanka.

  • Tamarta La Cusboonaysiin Karo: Waxaa loo isticmaalaa inverters-ka nidaamyada tamarta qorraxda iyo dabaysha.

  • Sahayda Korontada Warshadaha: Daar wareejinta heerkulka sare iyo heerka sare iyadoo khasaarooyin hoose jiraan.

  • Hawada Sare iyo Difaaca: Ku habboon deegaannada adag ee u baahan semiconductors-ka adag.

  • Saldhigyada Saldhigga 5GQaybaha Wafer-ka ee SiC Epitaxial waxay taageeraan cufnaanta awoodda sare ee codsiyada RF.

Wafer-ka SiC Epitaxial wuxuu suurtogaliyaa naqshado is haysta, beddelka degdega ah, iyo hufnaan beddelka tamarta oo sareysa marka loo eego wafer-ka silicon.

Faa'iidooyinka Wafer-ka Epitaxial-ka ee SiC

Tiknoolajiyadda SiC Epitaxial Wafer waxay bixisaa faa'iidooyin muhiim ah:

  1. Danab Jaban oo Sare: Waxay u adkaysataa danabyada ilaa 10 jeer ka sarreeya Si wafers.

  2. Qaboojinta KulaylkaWafer-ka Epitaxial SiC wuxuu si dhakhso leh u kala firdhiyaa kulaylka, taasoo u oggolaanaysa aaladaha inay si qabow oo kalsooni leh u shaqeeyaan.

  3. Xawaaraha Sare ee Beddelka: Khasaaraha beddelka hoose wuxuu suurtogeliyaa hufnaan sare iyo yarayn.

  4. Bandgap Ballaaran: Waxay hubisaa xasilloonida danabyada iyo heerkulka sare.

  5. Adkeysiga Waxyaabaha: SiC waa mid kiimiko ahaan aan firfircoonayn oo farsamo ahaan xooggan, kuna habboon codsiyada adag.

Faa'iidooyinkani waxay ka dhigayaan SiC Epitaxial Wafer agabka la door bidayo jiilka soo socda ee semiconductors-ka.

Su'aalaha Inta Badan La Isweydiiyo: SiC Epitaxial Wafer

S1: Waa maxay faraqa u dhexeeya wafer SiC ah iyo wafer Epitaxial SiC ah?
Wafer-ka SiC waxaa loola jeedaa substrate-ka guud, halka Wafer-ka SiC Epitaxial uu ka kooban yahay lakab si gaar ah loo beeray oo loo isticmaalo sameynta qalabka.

S2: Dhumucda noocee ah ayaa loo heli karaa lakabka Wafer-ka ee SiC Epitaxial?
Lakabyada epitaxial waxay caadi ahaan u dhexeeyaan dhowr micrometers ilaa in ka badan 100 μm, iyadoo ku xiran shuruudaha codsiga.

S3: Ma SiC Epitaxial Wafer ku habboon yahay jawiga heerkulka sare leh?
Haa, SiC Epitaxial Wafer wuxuu ku shaqeyn karaa xaalado ka sarreeya 600°C, isagoo si weyn uga sarreeya siliconka.

S4: Maxay cufnaanta cilladuhu muhiim ugu tahay SiC Epitaxial Wafer?
Cufnaanta cilladaha oo hooseysa waxay hagaajisaa waxqabadka qalabka iyo wax soo saarka, gaar ahaan codsiyada danab sare leh.

S5: Ma jiraan Wafer-yada Epitaxial SiC ee nooca N-type iyo P-type?
Haa, labada noocba waxaa lagu soo saaraa iyadoo la adeegsanayo xakamaynta gaaska dopant-ka saxda ah inta lagu jiro habka epitaxial-ka.

S6: Cabbirrada wafer-ka noocee ah ayaa caadi u ah Wafer-ka Epitaxial-ka ee SiC?
Dhexroorka caadiga ah waxaa ka mid ah 2-inji, 4-inji, 6-inji, iyo 8-inji oo sii kordheysa oo loogu talagalay wax soo saarka mugga sare.

S7: Sidee bay SiC Epitaxial Wafer u saameysaa kharashka iyo hufnaanta?
In kasta oo markii hore ka qaalisanaa silicon, SiC Epitaxial Wafer waxay yareysaa cabbirka nidaamka iyo luminta korontada, taasoo wanaajineysa waxtarka guud ee kharashka muddada dheer.

  • Kii hore:
  • Xiga:

    • Badeecadaha La Xiriira

    Halkan ku qor fariintaada oo noo soo dir
    Riix 'enter' si aad u raadiso ama ESC si aad u xidho