Graphite saxanka dhoobada ah ee SiC oo leh dahaarka CVD SiC ee qalabka

Dhoobada silikoon carbide looma isticmaalo oo keliya marxaladda kaydinta filimka khafiifka ah, sida epitaxy ama MOCVD, ama habaynta wafer-ka, oo ah xudunta saxamada silikoon ee MOCVD marka hore lagu mariyo jawiga kaydinta, sidaas darteedna aad bay u adkaystaan ​​​​kuleylka iyo miridhku. Silikoonnada dahaarka leh ee SiC waxay sidoo kale leeyihiin gudbin kuleyl oo sare iyo sifooyin qaybinta kulaylka oo aad u fiican.

Soo-saareyaasha wafer-ka ee Kiimikada ee saafiga ah ee Silicon Carbide (CVD SiC) ee loogu talagalay farsamaynta Heerkulka Sare ee Birta Dabiiciga ah ee Kiimikada (MOCVD).

Sideyaasha wafer-ka ee saafiga ah ee CVD SiC ayaa si weyn uga sarreeya sideyaasha wafer-ka ee caadiga ah ee loo isticmaalo habkan, kuwaas oo ah graphite oo lagu dahaadhay lakab CVD SiC ah. Sideyaashan ku salaysan graphite-ka ee dahaaran ma adkeysan karaan heerkulka sare (1100 ilaa 1200 digrii Celsius) ee looga baahan yahay dhigista GaN ee iftiinka sare leh ee buluugga iyo caddaanka maanta. Heerkulka sare wuxuu sababaa in dahaarka uu yeesho godad yar yar oo ay kiimikooyinka habka ku burburiyaan garaafka hoostiisa. Walxaha garaafka ayaa markaa ka soo baxa oo wasakheeya GaN, taasoo keenta in side-ka wafer-ka ee dahaaran la beddelo.

CVD SiC waxay leedahay nadiifnimo dhan 99.999% ama ka badan waxayna leedahay dabacsanaan kuleyl oo sareysa iyo iska caabin shoog kuleyl. Sidaa darteed, waxay u adkaysan kartaa heerkulka sare iyo jawiga adag ee wax soo saarka LED-ka dhalaalaya ee sare. Waa walax adag oo monolithic ah oo gaarta cufnaanta aragtiyeed, soo saarta walxo yar, waxayna muujisaa iska caabin aad u sareysa oo daxal iyo nabaad-guur ah. Maaddadu waxay beddeli kartaa daah-furnaanta iyo socodka iyada oo aan la soo bandhigin wasakh bir ah. Sideyaasha wafer-ka badanaa waa 17 inji dhexroor waxayna qaadi karaan ilaa 40 wafer oo 2-4 inji ah.