graphite saxan saxan dhoobo ah oo leh dahaarka CVD SiC ee qalabka

Ceramics Silicon carbide ma aha oo kaliya loo isticmaalo marxaladda dhigaalka filimka khafiifka ah, sida epitaxy ama MOCVD, ama in processing wafer, at wadnaha kuwaas oo saxaarad sidaha wafer for MOCVD marka hore la sakhiray deegaanka dhigaalka, oo sidaas daraaddeed aad u adkaysi u kulaylka iyo daxalka.SiC-dahaarka leh sidoo kale leeyihiin guryaha qaybinta kulaylka aad u fiican.

Dhigista Uumiga Kiimikada Saafiga ah ee Silicon Carbide (CVD SiC) sidayaal wafer-qaadayaal ah oo loogu talagalay habaynta heerkul sare ee Birta Uumiga Kiimikada Dabiiciga ah (MOCVD).

Sidayaal saxan CVD SiC wafer ayaa aad uga sarreeya sidayaal waferka caadiga ah ee loo isticmaalo habkan, kuwaas oo garaaf ah oo lagu dahaadhay lakabka CVD SiC. Qaadayaashan garaafyada ku salaysan ee dahaarka leh uma adkeysan karaan heerkulka sare (1100 ilaa 1200 darajo Celsius) ee looga baahan yahay dhigista GaN ee iftiinka sare ee ledhka buluuga iyo cadaanka ah ee maanta. Heerkulka sare wuxuu keenaa in dahaarka ay yeeshaan godad yaryar oo kiimiko ah oo ka soo baxa garaafka hoose. Qaybaha garaafka ayaa markaa ka bakhtiya oo wasakheeya GaN, taasoo keenaysa sidaha waferka dahaarka leh in la beddelo.

CVD SiC waxay leedahay nadiif ah 99.999% ama ka badan waxayna leedahay kuleyl kuleyl sare iyo iska caabin shoog kulayl ah. Sidaa darteed, waxay u adkeysan kartaa heerkulka sare iyo jawiga adag ee wax soo saarka iftiinka sare ee LED. Waa maaddo monolithic adag ah oo gaarta cufnaanta aragtida, soo saarta qaybo yar, oo muujisa iska caabin aad u sarreeya oo daxalka iyo nabaadguurka ah. Maaddadu waxay bedeli kartaa mugdiga iyo korriinka iyada oo aan soo bandhigin wasakh bir ah. Qaadayaasha wafer-ku waxay caadi ahaan yihiin 17 inji dhexroor waxayna qaadi karaan ilaa 40 2-4 inji.