Qalabka Kor-u-qaadista Laser-ka ee Semiconductor-ka

Qalabka Lifaaqa Laser-ka ee Semiconductor-ka ah Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Qalabka Lift-Off Laser-ka Semiconductor wuxuu matalaa xal jiilka soo socda oo loogu talagalay khafiifinta unugyada ee horumarsan ee habka wax-soo-saarka walxaha semiconductor-ka. Si ka duwan hababka wafering-ka dhaqameed ee ku tiirsan shiididda farsamada, jarista siligga dheemanka, ama qorshaynta kiimikada-farsamada, madalkan ku salaysan laysarka wuxuu bixiyaa beddel aan taabasho lahayn, oo aan burburin si looga saaro lakabyada aadka u khafiifsan ee qaybaha semiconductor-ka badan.

Iyada oo loo habeeyay agabyada jaban iyo kuwa qiimaha sare leh sida gallium nitride (GaN), silicon carbide (SiC), sapphire, iyo gallium arsenide (GaAs), Qalabka Lift-Off-ka ee Semiconductor Laser wuxuu awood u siinayaa jarista saxda ah ee filimada cabbirka wafer-ka si toos ah laga bilaabo maaddada kristal-ka. Tiknoolajiyaddan horumarsan waxay si weyn u yareysaa qashinka agabka, waxay wanaajisaa wax soo saarka, waxayna kor u qaaddaa hufnaanta substrate-ka - kuwaas oo dhammaantood muhiim u ah aaladaha jiilka xiga ee elektaroonigga korontada, nidaamyada RF, photonics, iyo bandhigyada yaryar.

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Astaamaha

Jaantus Faahfaahsan

Dulmar Guud oo ku saabsan Qalabka Lifaaqa Laser-ka

Iyada oo xoogga la saarayo xakamaynta otomaatiga ah, qaabaynta alwaaxa, iyo falanqaynta isdhexgalka walxaha laysarka, Qalabka Lift-Off-ka ee Semiconductor Laser waxaa loogu talagalay inuu si habsami leh ugu dhex milmo socodka shaqada wax soo saarka semiconductor-ka iyadoo la taageerayo dabacsanaanta R&D iyo ballaarinta wax soo saarka tirada badan.

Mabda'a Tiknoolajiyadda & Hawlgalka ee Qalabka Lifaaqa Laser-ka

Hawsha ay qabato Semiconductor Laser Lift-Off Equipment waxay ku bilaabataa iyadoo shucaac ka qaadaysa isha deeq-bixiyaha dhinac iyadoo la adeegsanayo shucaac ultraviolet ah oo tamar sare leh. Falkan waxaa si adag diiradda loogu saarayaa qoto dheer oo gudaha ah, badanaa iyadoo la raacayo is-dhexgal injineer ah, halkaas oo nuugista tamarta lagu kordhiyo iyadoo ay ugu wacan tahay isbarbardhigga indhaha, kulaylka, ama kiimikada.

Lakabka nuugista tamarta, kuleylinta maxalliga ah waxay horseeddaa qarax yar oo degdeg ah, ballaarin gaas, ama kala-go'id lakabka is-dhexgalka (tusaale ahaan, filim cadaadis leh ama oksaydh allabaryo ah). Qalalaasahan si sax ah loo xakameeyey wuxuu sababaa in lakabka sare ee kirismaalka - oo leh dhumuc tobanaan micrometers ah - uu si nadiif ah uga go'o salka.

Qalabka Lift-Off-ka Laser-ka ee Semiconductor wuxuu adeegsadaa madaxyada sawir-qaadista ee isku-dhafan ee dhaqdhaqaaqa, xakamaynta dhidibka z-la barnaamijin karo, iyo milicsiga waqtiga-dhabta ah si loo hubiyo in garaac kasta uu tamar ku keeno meesha bartilmaameedka ah. Qalabka waxaa sidoo kale lagu habeyn karaa awoodaha qaabka-burburka ama garaaca badan si loo xoojiyo simanaanta kala-goynta loona yareeyo walbahaarka harsan. Muhiimad ahaan, maadaama iftiinka laysarka uusan waligiis la xiriirin walxaha jir ahaan, khatarta ah in microcrack, foorarsato, ama jajabka dusha sare ayaa si weyn hoos ugu dhacda.

Tani waxay ka dhigaysaa habka khafiifinta laysarka mid wax ka beddela ciyaarta, gaar ahaan codsiyada halkaas oo loo baahan yahay wafers aad u siman oo aad u khafiif ah oo leh sub-micron TTV (Wadar ahaan Kala duwanaanshaha Dhumucda).

Halbeegga Qalabka Lifaaqa Laser-ka ee Semiconductor-ka ah

Mowjadda hirarka	IR/SHG/THG/FHG
Ballaca garaaca wadnaha	Nanosecond, Picosecond, Femtosecond
Nidaamka Indhaha	Nidaamka indhaha ee go'an ama nidaamka Galvano-optical
Marxaladda XY	500 mm × 500 mm
Kala duwanaanshaha farsamaynta	160 mm
Xawaaraha Dhaqdhaqaaqa	Ugu badnaan 1,000 mm/sec
Ku celcelinta	±1 μm ama ka yar
Saxnaanta Goobta oo Dhan:	±5 μm ama ka yar
Cabbirka Wafer-ka	2-6 inji ama habaysan
Xakamaynta	Windows 10, 11 iyo PLC
Danab Bixinta Korontada	AC 200 V ±20 V, Hal-marxalad, 50/60 kHz
Cabbirrada Dibadda	2400 mm (B) × 1700 mm (D) × 2000 mm (D)
Miisaanka	1,000 kg

Codsiyada Warshadaha ee Qalabka Lifaaqa Laser-ka

Qalabka Lifaaqa Laser-ka ee Semiconductor-ka ayaa si dhakhso ah u beddelaya sida agabka loogu diyaariyo qaybo badan oo semiconductor ah:

Qalabka Korontada GaN ee Toosan ee Qalabka Lifaaqa Laser-ka

Ka qaadista filimada GaN-on-GaN ee aadka u khafiifsan ee laga soo saaro bulk ingots waxay suurtogal ka dhigaysaa qaab-dhismeedka gudbinta toosan iyo dib u isticmaalka substrate-ka qaali ah.

Khafiifinta SiC Wafer ee Qalabka Schottky iyo MOSFET

Waxay yareysaa dhumucda lakabka qalabka iyadoo la ilaalinayo qaabka substrate-ka - oo ku habboon elektarooniga korontada ee si dhakhso ah u beddelaya.

Qalabka LED-ka iyo Qalabka Bandhigga ee Qalabka Lifaaqa Laser-ka ku salaysan ee Sapphire-ka ah

Waxay suurtogal ka dhigaysaa kala soocidda hufan ee lakabka qalabka iyo boules-ka sapphire si ay u taageeraan wax soo saarka micro-LED ee khafiifka ah, oo si heer sare ah loo habeeyay.

Injineernimada Qalabka III-V ee Qalabka Lifaaqa Laser-ka

Waxay sahlaysaa kala-goynta lakabyada GaAs, InP, iyo AlGaN si loo helo is-dhexgalka optoelectronic-ka ee horumarsan.

Farsamada IC-ga khafiifka ah iyo Dareemaha

Waxay soo saartaa lakabyo khafiif ah oo shaqeynaya oo loogu talagalay dareemayaasha cadaadiska, mitirrada xawaaraha, ama sawirrada iftiinka, halkaas oo baaxaddu ay tahay caqabad waxqabad.

Elektaroonikada dabacsan oo hufan

Waxay diyaarisaa substrate-yo aad u khafiif ah oo ku habboon bandhigyada dabacsan, wareegyada la xiran karo, iyo daaqadaha casriga ah ee hufan.

Mid kasta oo ka mid ah meelahan, Qalabka Lift-Off-ka Laser-ka ee Semiconductor wuxuu door muhiim ah ka ciyaaraa awoodsiinta yaraynta, dib u isticmaalka walxaha, iyo fududeynta habka.

Su'aalaha Badiya La Weydiiyo (Su'aalaha Badiya La Weydiiyo) ee Qalabka Lifeynta Laser-ka

S1: Waa maxay dhumucda ugu yar ee aan ku gaari karo isticmaalka Qalabka Lift-Off-ka ee Laser-ka Semiconductor?
A1:Caadi ahaan inta u dhaxaysa 10-30 microns iyadoo ku xiran agabka. Hawshu waxay awood u leedahay natiijooyin khafiif ah iyadoo la adeegsanayo dejimaha wax laga beddelay.

S2: Tan ma loo isticmaali karaa in lagu jaro wafer badan oo ka mid ah isla ingot-ka?
A2:Haa. Macaamiil badan ayaa adeegsada farsamada laysarka lagu qaado si ay u sameeyaan soo saarista taxane ah ee lakabyo badan oo khafiif ah oo laga soo saaray hal bulk ingot.

S3: Waa maxay sifooyinka badbaadada ee ku jira hawlgalka laysarka awoodda sare leh?
A3:Qalabka lagu xiro heerka 1aad, nidaamyada isku xidhka, gaashaanka alwaaxa, iyo daminta otomaatiga ah dhammaantood waa kuwo caadi ah.

S4: Sidee nidaamkani ula barbar dhigi karaa miinshaarta siligga dheemanka marka loo eego kharashka?
A4:In kasta oo capex-ka bilowga ah uu ka sarreeyo, qaadista laysarka ayaa si weyn u yareysa kharashyada la isticmaalo, burburka substrate-ka, iyo tallaabooyinka ka dambeeya habaynta - taasoo hoos u dhigaysa wadarta kharashka lahaanshaha (TCO) muddada dheer.

S5: Geedi socodka ma la bedeli karaa ingots 6-inch ama 8-inch ah?
A5:Dabcan. Madalku wuxuu taageeraa ilaa 12-inji oo ah substrate-yo leh qaybinta iftiinka isku midka ah iyo marxaladaha dhaqdhaqaaqa ee qaabka weyn.

Nagu Saabsan

XKH waxay ku takhasustay horumarinta tiknoolajiyadda sare, wax soo saarka, iyo iibinta muraayadaha indhaha ee gaarka ah iyo agabka cusub ee kiristaalka. Badeecadahayagu waxay u adeegaan qalabka elektaroonigga ah ee indhaha, qalabka elektaroonigga ah ee macaamiisha, iyo militariga. Waxaan bixinaa qaybaha indhaha ee Sapphire, daboolka muraayadaha taleefanka gacanta, dhoobada, LT, Silicon Carbide SIC, Quartz, iyo wafers kiristaal semiconductor ah. Iyada oo leh khibrad xirfadeed iyo qalab casri ah, waxaan ku fiicanahay habaynta wax soo saarka aan caadiga ahayn, annagoo higsanayna inaan noqono shirkad hormuud u ah qalabka optoelectronic-ka ee tiknoolajiyada sare.