Habka Kobaca Sapphire Ingot ee Czochralski CZ ee Soo saarista Wafers 2inch-12inch Sapphire

Habka Kobaca Sapphire Ingot ee Czochralski CZ ee Soo saarista 2inch-12inch Sapphire Wafers Sawirka

Sharaxaad Gaaban:

Qalabka Kobaca Sapphire Ingot (Habka Czochralski) waa nidaam goyn ah oo loogu talagalay nadiifnimo sare, cilad hoose oo sapphire ah oo hal-crystal ah. Habka Czochralski (CZ) ayaa awood u siinaya xakamaynta saxda ah ee xawliga jiidaya abuurka (0.5-5 mm/h), wareegga wareegga (5-30 rpm), iyo heerkulbeegyada heerkulka iridium crucible, soo saarida kiristaalo axisymmetric ah ilaa 12 inji (300 mm) dhexroor. Qalabkani waxa uu taageeraa C/A-diyaarada kontoroolka hanuuninta crystal, taas oo awood u siinaysa kobaca heerka indhaha, heerka elegtarooniga ah, iyo sapphire doped (tusaale, Cr³⁺ ruby, Ti³⁺ xidigta sapphire).

XKH waxay bixisaa xalal dhamaadka-ilaa-dhamaadka ah, oo ay ku jiraan qalabaynta qalabka (2-12-inji wax soo saarka wafer), hagaajinta habka (cufnaanta cilladda <100/cm²), iyo tababbarka farsamada, oo leh wax soo saar bishiiba 5,000+ wafers, codsiyada sida substrates LED, GaN epitaxy, iyo baakadaha semiconductor.

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Mabda'a Shaqada

Habka CZ wuxuu ku shaqeeyaa tillaabooyinka soo socda:
1. Alaabta Ceyriinka ah ee dhalaalaysa: Nadiifinta sare ee Al₂O₃ (nadiifin>99.999%) waxa lagu dhalaalinaya qolof iridium ah 2050-2100°C.
2. Hordhac abuur Crystal: Karistan abuur ah ayaa lagu dejiyaa dhalaalka, oo ay ku xigto jiidid degdeg ah si loo sameeyo qoorta (dhexroor <1 mm) si loo baabi'iyo kala-baxyada.
3. Samaynta garabka iyo Kobaca Bulk: Xawaaraha jiidista waxa la dhimay 0.2-1 mm/h, iyada oo si tartiib tartiib ah u ballaadhinaysa dhexroorka crystal ilaa cabbirka la beegsanayo (tusaale, 4-12 inji).
4. Nadiifinta iyo qaboojinta: Karistaanka waxaa lagu qaboojiyaa 0.1-0.5°C/daqiiqo si loo yareeyo dillaaca kulaylka uu keeno.
5. Noocyada Crystal
Fasalka Elektarooniga ah: Substrates Semiconductor (TTV <5 μm)
Heerka indhaha: UV laysarka daaqadaha (gudbinta> 90%@200 nm)
Kala duwanaanshiyaha Doped: Ruby (fiirsashada Cr³⁺ 0.01-0.5 wt.%), tubbada sapphire buluuga ah

Qaybaha Nidaamka Muhiimka ah

1. Nidaamka dhalaalka
Iridium Crucible: U adkaysata 2300°C, daxalka u adkaysta, la jaan qaada dhalaalka waaweyn (100-400 kg).
Foornada Kululaynta Induction: Xakamaynta heerkulka madax-bannaan ee aag-badan (± 0.5°C), heerkulbeegyada kulaylka la hagaajiyay.

2. Jiididda iyo Nidaamka Wareegga
Matoorka Sare ee Saxda ah: Xalinta jiidida 0.01 mm/h, xoogaynta wareega <0.01 mm.
Shaabada Dheecaannada Magnetka: Gudbinta aan lala xiriirin ee koritaanka joogtada ah (>72 saacadood).

3. Nidaamka Xakamaynta kulaylka
Xakamaynta Loop-xiran ee PID: Isku-habaynta awooda-waqtiga-dhabta ah (50-200 kW) si loo dejiyo goobta kulaylka.
Ilaalinta Gaaska Inert: Ar/N₂ isku darka (99.999% daahirsanaan)

4. Automation iyo la socodka
Korjoogteynta dhexroorka CCD: jawaab celinta-waqtiga-dhabta ah (saxa ± 0.01 mm).
Thermography Infrared: Wuxuu ilaaliyaa qaab-dhismeedka dareeraha adag.

CZ vs. KY Habka Isbarbardhigga

Parameter	Habka CZ	Habka KY
Max. Cabbirka Crystal	12 inji (300 mm)	400 mm (kumbuyuutar u eg pear)
Cufnaanta cilladaysan	<100/cm²	<50/cm²
Heerka kobaca	0.5-5 mm/h	0.1-2 mm/h
Isticmaalka Tamarta	50-80 kWh/kg	80-120 kWh/kg
Codsiyada	Substrates LED, GaN epitaxy	Daaqadaha indhaha, muraayado waaweyn
Qiimaha	Dhexdhexaad (maalgelinta qalabka sare)	Sare (habka adag)

Codsiyada Muhiimka ah

1. Warshadaha Semiconductor
Substrates GaN Epitaxial: 2-8-inch wafers (TTV <10 μm) oo loogu talagalay Micro-LEDs iyo diodes laser.
SOI Wafers: qallafsanaanta dusha sare <0.2 nm ee chips-isku-dhafan ee 3D.

2. Optoelectronics
Daaqadaha Laser UV: U adkeysanaya 200 W/cm² cufnaanta korantada ee muraayadaha indhaha.
Qaybaha Infrared

3. Macaamiisha Elektarooniga ah
Daboolista kamaradaha taleefanka casriga ah: Mohs adkeyd 9, 10× hagaajinta iska caabinta xoqan.
Bandhigyada Smartwatch: Dhumucda 0.3-0.5 mm, gudbinta> 92%.

4. Difaaca iyo hawada sare
Daaqadaha Nukliyeerka: U adkaysiga shucaaca ilaa 10¹⁶ n/cm².
Muraayadaha Laysarka Awoodda Sare: Qallafsanaanta kulaylka <λ/20@1064 nm.

Adeegyada XKH

1. Qalabaynta Qalabka
Naqshadaynta Qolka La Isku Milicsan Karo: Φ200–400 mm qaabaynta ee 2–12-inji soosaar wafer ah.
Dabacsanaanta Doping: Waxay taageertaa dhul naadir ah (Er/Yb) iyo biraha kala-guurka (Ti/Cr) ee doping-ka loogu talagalay guryaha ku habboon ee optoelectronic.

2. Taageerada dhamaadka-ilaa-dhamaadka
Hababka Hagaajinta: Cuntooyinka hore loo ansixiyay (50+) ee LED, aaladaha RF, iyo qaybaha shucaaca-adag.
Shabakadda Adeegga Caalamiga ah: 24/7 ogaanshaha fogaanta iyo dayactirka goobta oo leh dammaanad 24 bilood ah.

3. Habaynta Hoos-u-socodka
Farsamaynta Wafer: Goyn, shiidi, iyo turxaan bixin loogu talagalay 2–12-inch maraqyada (C/A-diyaarad).
Alaabta Qiimaha Lagu Daray:
Qaybaha indhaha: UV/IR daaqadaha (qarmucdiisuna waa 0.5-50 mm).
Agabka-Grade-Jewelry: Cr³⁺ ruby (GIA-shahaadad), Ti³⁺ xiddig sapphire.

4. Hogaaminta Farsamada
Shahaadooyinka: Waferrada EMI-u hoggaansan.
Patents: Ruqsadaha asaasiga ah ee habka CZ hal-abuurka.

Gabagabo

Qalabka habka CZ wuxuu bixiyaa iswaafajinta cabbirka ballaaran, heerarka cilladaha aadka u hooseeya, iyo xasilloonida nidaamka sare, taasoo ka dhigaysa halbeegga warshadaha ee LED, semiconductor, iyo codsiyada difaaca. XKH waxay bixisaa taageero dhamaystiran oo laga bilaabo qalabaynta qalabka ilaa ka-hortagga kobaca ka dib, taasoo u sahlaysa macaamiisha inay gaadhaan kharash-ku-ool ah, wax-soo-saarka crystal sapphire-waxqabadka sare leh.