Alaabta
-
SiC ceramic end effect gacan dhiibista gacanta wafer-qaadista
-
4inch 6inch 8inch SiC Crystal Growth Furnace ee Geedi socodka CVD
-
6 inch 4H SEMI Nooca SiC ka kooban substrate Dhumucdiisuna tahay 500μm TTV≤5μm darajada MOS
-
Waxyaalaha Sapphire-ka ee Windows-ka ee Sapphire-ka ee qaabaysan ee la habeeyey oo leh sixid sax ah
-
Saxan dhoobo ah oo SiC ah oo loogu talagalay 4inch 6inch wafer haystaha ICP
-
Daaqadda Sapphire-Qaabka-Qaabka ah ee Adag ee Sare ee Shaashadaha Taleefanka Casriga ah
-
12 inch Substrate N Nooca SiC Substrate N Nooca Weyn ee Waxqabadka Sare ee Codsiyada RF
-
Custom N Nooca SiC Seed Substrate Dia153/155mm ee Korontada Elektarooniga ah
-
Qalabka khafiifka ah ee Wafer ee 4 inch-12 inch Sapphire/SiC/Si Wafers Processing
-
12 inch substrate SiC Dhexroorka 300mm Dhumucda 750μm 4H-N Nooca waa la habeyn karaa
-
Substrates SiC Seed Crystal Dia 205/203/208 Nooca 4H-N ee Isgaarsiinta indhaha
-
Sapphire Optical Windows Single Crystal Al₂O₃ Xidho Cabbirrada beenta ah ama Qaabka u adkaysta