Badeecadaha
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Usha iyo Biinanka Qaadista Sapphire-ka Warshadaha, Adkaanta Sare ee Al2O3 Biinanka Sapphire-ka ee Maareynta Wafer-ka, Nidaamka Radar-ka iyo Habaynta Semiconductor-ka - Dhexroorka 1.6mm ilaa 2mm
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Biinanka Qaadista Sapphire ee loo habeeyey, Adkaanta Sare ee Al2O3 Qaybaha Hal-Kristaalka ah ee loogu talagalay Wafer-ka Wafer-ka - Dhexroorka 1.6mm, 1.8mm, Loo habeyn karo Codsiyada Warshadaha
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Muraayadaha kubbadda safayr ee heerka indhaha Al2O3 Qalabka gudbinta 0.15-5.5um Dia 1mm 1.5mm
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kubbadda safayr Dia 1.0 1.1 1.5 ee muraayadda kubbadda indhaha oo adag oo sare leh oo keli ah
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Dia sapphire dia midab leh oo sapphire ah oo loogu talagalay saacad, Dia la habeyn karo 40 38mm dhumucdiisuna tahay 350um 550um, hufan oo sare
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Nooca N-nooca P ee aan lahayn nooca 2-inji ah ee InSb wafer 111 100 ee loogu talagalay Baadhayaasha Infrared-ka
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Wafers Indium Antimonide (InSb) Nooca N Nooca P Epi diyaar u ah oo aan la qallajin Te doped ama Ge doped 2 inji 3 inji dhumucdiisuna tahay 4 inji Indium Antimonide (InSb)
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2 inji oo ah wafer hal sanduuq ah oo wafer ah oo leh PP ama PC Waxaa loo isticmaalaa xalalka lacagta qadaadiicda ah 1 inji 3 inji 4 inji 5 inji 6 inji 12 inji ayaa la heli karaa
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
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Habka Sapphire-ka ee KY iyo EFG, tuubooyinka ulaha sapphire-ka ee cadaadiska sare leh
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Dahaarka sapphire 3 inji 4 inji 6 inji ah Habka Monocrystal CZ KY La habeyn karo
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GaAs substrate-ka wafer-ka ee awoodda sare leh ee gallium arsenide wafer-ka awoodda leh ee laysarka hirarka 905nm ee daaweynta caafimaadka laysarka