Alaabta
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GaAs awoodda sare ee epitaxial wafer substrate gallium arsenide wafer awood leysarka dhererka hirarka 905nm ee daaweynta laysarka
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GaAs laser epitaxial wafer 4 inch 6 inch VCSEL dalool toosan oogada sare ee qiiqa laysarka hirarka hirarka 940nm hal isgoys
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InGaAs substrate wafer substrate PD Array sawir-qaade ayaa loo isticmaali karaa LiDAR
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2inch 3inch 4inch InP epitaxial wafer substrate APD iftiinka isgaarsiinta fiber optic ama LiDAR
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Daab beerista timaha sapphire ee adkeysi sare u leh iska caabinta daxalka qalab caafimaad habeynta ayaa loo isticmaali karaa quruxda caafimaadka
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Daabka Sapphire ee timaha beerista
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Sapphire fiber optic fiber Al2O3 hal kirishtaan ah oo hufan xargaha xargaha xariijinta fiber indhaha 25-500um
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Tuubbada Sapphire Hufnaan sare 1inch 2inch 3inch tube caado dhererkeedu yahay 10-800 mm 99.999% AL2O3 daahir sare
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Sapphire Prism Sapphire Lens Hufnaan sare oo Al2O3 BK7 JGS1 JGS2 Qalabka indhaha
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Sapphire ingot dia 4inch × 80mm Monocrystalline Al2O3 99.999% Single Crystal
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giraanta sapphire oo dhan laga sameeyay sapphire shaybaadhka hufan ee sapphire
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Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Grade Dummy grade