Alaabta
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Foornada Koritaanka SiC Ingot ee Hababka SiC Crystal TSSG/LPE Dhexroor
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Infrared Picosecond Dual-Platform Laser Qalabka Goynta ee muraayadaha indhaha/Quartz/Sapphire
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Dhagaxa Dhagaxa Sapphire-ka ah ee Midabka leh ee Dahabka ah ee Dahabka Goynta Xajmiga Bilaashka ah
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SiC ceramic end effect gacan dhiibista gacanta wafer-qaadista
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4inch 6inch 8inch SiC Crystal Growth Furnace ee Geedi socodka CVD
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6 inch 4H SEMI Nooca SiC ka kooban substrate Dhumucdiisuna tahay 500μm TTV≤5μm darajada MOS
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Waxyaalaha Sapphire-ka ee Windows-ka ee Sapphire-ka ee qaabaysan ee la habeeyey oo leh sixid sax ah
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Saxan ama saxaarad dhoobo ah oo SiC ah oo loogu talagalay 4inch 6inch wafer haystaha ICP
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Daaqadda Sapphire-Qaabka-Qaabka ah ee Adag ee Sare ee Shaashadaha Taleefanka Casriga ah
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12 inch Substrate N Nooca SiC Substrate N Nooca Weyn ee Waxqabadka Sare ee Codsiyada RF
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Custom N Nooca SiC Seed Substrate Dia153/155mm ee Korontada Elektarooniga ah
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Infrared Nanosecond Laser Drilling Qalabka ee dhumucdiisuna waxay tahay 20mm