Badeecadaha
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Muraayadaha indhaha ee Sic 6SP 10x10x10mmt 4H-SEMI HPSI Cabbirka la habeeyey
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LiNbO₃ Wafers 2in-8inji Dhumucdiisuna tahay 0.1 ~ 0.5mm TTV 3µm Gaar ah
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Foornada Kobaca Ingot ee SiC ee loogu talagalay Hababka Cabbirka Weyn ee SiC Crystal TSSG/LPE
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Qalabka jarista laser-ka ee Infrared Picosecond oo laba-Diyaar ah oo loogu talagalay Habaynta Muraayadda/Quartz/Sapphire-ka
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Dhagaxa Sapphire Cad oo Midabaysan oo loogu talagalay dahabka Jarida Cabbirka Bilaashka ah
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Gacan-qabashada dhammaadka dhoobada ee SiC ee loogu talagalay qaadista wafer-ka
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Foorno 4 inji ah oo 6 inji ah oo 8 inji ah oo loogu talagalay Kobaca Kiristaalka SiC ee Habka CVD
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6 Inji 4H SEMI Nooca SiC substrate isku dhafan Dhumucda 500μm TTV≤5μm heerka MOS
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Qaybaha Sapphire ee Daaqadaha Indhaha ee Qaabaysan oo Qaabaysan oo leh Nadiifin Sax ah
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Saxan/saxan dhoobada ah oo SiC ah oo loogu talagalay hayaha wafer-ka 4 inji ah ee 6 inji ah ee ICP
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Daaqadda Sapphire ee Qaabaysan ee Adkaynta Sare ee Shaashadaha Taleefannada Casriga ah
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12 inji SiC Substrate N Nooca Cabbir weyn Codsiyada RF ee Waxqabadka Sare leh