Badeecadaha
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12 inji SIC substrate silicon carbide dhexroorka heerka ugu sarreeya 300mm cabbir weyn 4H-N Ku habboon kala-baxa kulaylka qalabka awoodda sare leh
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Dia300x1.0mmt Dhumucda Sapphire Wafer C-Plane SSP/DSP
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8 inji 200mm Sapphire substrate ah oo ah wafer safayr ah oo dhumucdiisuna tahay 1SP 2SP 0.5mm 0.75mm
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Wafer HPSI SiC ah: 3 inji dhumucdiisuna tahay: 350um± 25 µm oo loogu talagalay Korontada Elektarooniga ah
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8 inji SiC silicon carbide wafer 4H-N nooca 0.5mm heerka wax soo saarka heerka cilmi-baarista substrate gaar ah oo la safeeyey
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Keli ah oo kiristaal ah Al2O3 99.999% Dia200mm wafers safayr ah 1.0mm dhumucdiisuna tahay 0.75mm
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156mm 159mm 6 inji Sapphire Wafer oo loogu talagalay side C-Plane DSP TTV
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dhidibka C/A/M 4 inji oo ah wafer safayr ah oo kiristaalo keli ah Al2O3, SSP DSP oo ah substrate safayr adag oo sare leh
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3 inji Nadiifnimo Sare oo ah Semi-dahaarka (HPSI) Wafer SiC ah oo 350um ah oo ah darajada ugu sarreysa
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Nooca P-nooca SiC substrate SiC wafer Dia2inch badeecad cusub
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Habka farsamaynta dusha sare ee ulaha laser-ka ee loo yaqaan 'sapphire kristal kristal' ee titanium-doped
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8 inji 200mm Silicon Carbide SiC Wafers 4H-N Nooca wax soo saarka 500um dhumucdiisuna waa