Nooca P-nooca SiC substrate SiC wafer Dia2inch cusub

Nooca P-nooca SiC substrate SiC wafer Dia2inch badeeco cusub oo muuqaal leh

Sharaxaad Gaaban:

2 inch P-Type Silicon Carbide (SiC) Wafer oo ku jira 4H ama 6H polytype. Waxay leedahay sifooyin la mid ah sida waferka N-type Silicon Carbide (SiC), sida iska caabbinta heerkulka sare, heerkulka sare ee kulaylka, korantada sare ee korontada, iwm. Nooca P-nooca SiC waxaa guud ahaan loo isticmaalaa qalabka wax soo saarka, gaar ahaan wax soo saarka ee Insulated. Gate Bipolar Transistor (IGBT). Naqshadaynta IGBT waxay inta badan ku lug leedahay isgoysyada PN, halkaasoo nooca P-SiC ay faa'iido u yeelan karto xakameynta habdhaqanka aaladaha.

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Substrates-ka nooca Silicon carbide waxaa inta badan loo isticmaalaa in lagu sameeyo aaladaha awooda, sida Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, kaas oo ah dami shid. MOSFET=IGFET (tubo saameyn ku yeelashada hawada ee birta oksaydhka, ama nooca iridaha dahaaran ee saamaynta garoonka dhexdiisa). BJT (Bipolar Junction Transistor, oo sidoo kale loo yaqaan transistor-ka), laba-cirifoodka macneheedu waa in ay jiraan laba nooc oo elektaroonig ah iyo dalool sidayaal ku lug leh habka socodsiinta shaqada, guud ahaan waxaa jira isku xirka PN ee ku lug leh socodsiinta.

2-inch p-nooca silicon carbide (SiC) waferku wuxuu ku jiraa 4H ama 6H polytype. Waxay leedahay sifooyin la mid ah kuwa n-nooca silikoon carbide (SiC) wafers, sida iska caabin heerkul sarreeya, kulaylka sare, iyo korantada sare. Substrate-ka nooca p-SiC ayaa inta badan loo adeegsadaa samaynta aaladaha korantada, gaar ahaan samaynta transistor-ka laba-cirifoodka ee dahaaran (IGBTs). Naqshadeynta IGBTs waxay caadi ahaan ku lug leedahay isgoysyada PN, halkaasoo p-nooca SiC uu faa'iido u leeyahay xakameynta habdhaqanka qalabka.