Nooca P-nooca SiC substrate SiC wafer Dia2inch badeecad cusub

Substrates-ka silicon carbide-ka nooca P-type ayaa badanaa loo isticmaalaa in lagu sameeyo aaladaha korontada, sida transistors-ka Bipolar-ka ee Insulate-Gate (IGBTs).

IGBT= MOSFET+BJT, kaas oo ah badhan damin ah. MOSFET=IGFET (tuubada saamaynta goobta semiconductor-ka birta ah, ama transistor-ka saamaynta goobta nooca albaabka dahaaran). BJT (Transistor-ka Bipolar Junction, oo sidoo kale loo yaqaan transistor-ka), laba-jibbaarane macnaheedu waa in ay jiraan laba nooc oo ah sideyaal elektaroonik ah iyo god oo ku lug leh habka gudbinta shaqada, guud ahaan waxaa jira isgoyska PN ee ku lug leh gudbinta.

Wafer-ka nooca p-type silicon carbide (SiC) ee 2-inji ah wuxuu ku jiraa polytype 4H ama 6H. Waxay leedahay sifooyin la mid ah wafer-ka nooca n-type silicon carbide (SiC), sida iska caabbinta heerkulka sare, conductivity kulaylka sare, iyo conductivity koronto oo sare. Substrates-ka nooca p-type SiC waxaa badanaa loo isticmaalaa sameynta aaladaha korontada, gaar ahaan sameynta transistors-ka bipolar-ka ee dahaaran (IGBTs). Naqshadeynta IGBTs waxay caadi ahaan ku lug leedahay isgoysyada PN, halkaas oo nooca p-type SiC ay faa'iido u leedahay xakamaynta dhaqanka qalabka.