Nooca N-Nooca SiC ee ku jira Si Substrates Dia6inch
| 等级Fasal | U 级 | P级 | D级 |
| Heerka BPD ee Hoose | Heerka Wax Soo Saarka | Fasalka Madow | |
| 直径Dhexroorka | 150.0 mm±0.25mm | ||
| 厚度Dhumucda | 500 μm±25μm | ||
| 晶片方向Jihaynta Wafer-ka | Dhidibka ka baxsan: 4.0° dhanka < 11-20 > ±0.5° ee 4H-N Dhidibka saaran: <0001>±0.5° ee 4H-SI | ||
| 主定位边方向Aqal Hoose | {10-10}±5.0° | ||
| 主定位边长度Dhererka Fidsan ee Aasaasiga ah | 47.5 mm±2.5 mm | ||
| 边缘Ka saarista geeska | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Iska caabin | ≥1E5 Ω·cm | ||
| 表面粗糙度Qalafsanaan | Boolish Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Midna ma jiro | Dhererka wadarta ah ≤10mm, dhererka hal ≤2mm | |
| Dildilaaca iftiinka xooggan | |||
| 六方空洞（强光灯观测）* | Aagga wadarta ah ≤1% | Aagga wadarta ah ≤5% | |
| Taarikada Hex iyadoo la adeegsanayo iftiin xooggan oo sare | |||
| 多型(强光灯观测)* | Midna ma jiro | Aagga wadajirka ah≤5% | |
| Meelaha Polytype-ka ah iyadoo la adeegsanayo iftiin xooggan | |||
| 划痕(强光灯观测)*& | 3 xoqan ilaa 1 × dhexroor wafer ah | 5 xoqan ilaa 1 × dhexroorka wafer | |
| Xoqitaan ka yimaada iftiin xooggan | dhererka wadarta ah | dhererka wadarta ah | |
| 崩边# Jabka geeska | Midna ma jiro | 5 la oggol yahay, ≤1 mm midkiiba | |
| 表面污染物（强光灯观测） | Midna ma jiro | ||
| Wasakheynta iftiinka xoogga badan | |||
Jaantus Faahfaahsan
