N-Nooca SiC on Si Composite Substrates Dia6inch
| 等级Darajo | U 级 | P级 | D级 |
| Heerka BPD hooseeya | Heerka Wax-soo-saarka | Dummy Fasalka | |
| 直径Dhexroorka | 150.0 mm±0.25mm | ||
| 厚度Dhumucda | 500 μm±25μm | ||
| 晶片方向Hanuuninta Wafer | Xagasha ka baxsan : 4.0 ° dhanka <11-20> ± 0.5° ee 4H-N dhidibka : <0001>±0.5° ee 4H-SI | ||
| 主定位边方向Guriga Hoose | {10-10}±5.0° | ||
| 主定位边长度Dhererka Guriga aasaasiga ah | 47.5 mm±2.5 mm | ||
| 边缘Ka saarida gees | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm/≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率iska caabin | ≥1E5 Ω·cm | ||
| 表面粗糙度Qalafsanaan | Polish Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Midna | Dhererka isugeynta ≤10mm, hal dherer≤2mm | |
| Dildilaaca iftiinka xoogga sare | |||
| 六方空洞（强光灯观测）* | Aagga isugeynta ≤1% | Aagga isugeynta ≤5% | |
| Hex Plates oo leh iftiin xoogan oo sarreeya | |||
| 多型(强光灯观测)* | Midna | Aagga isugeynta≤5% | |
| Noocyada kala duwan ee iftiinka xoogga badan | |||
| 划痕(强光灯观测)*& | 3 xagtin ilaa 1× dhexroorka wafer | 5 xagtin ilaa 1× dhexroorka wafer | |
| Xariiro iftiinka xoogga sare leh | dhererka isugeynta | dhererka isugeynta | |
| 崩边# Chip Edge | Midna | 5 waa la ogol yahay, ≤1 mm midkiiba | |
| 表面污染物（强光灯观测） | Midna | ||
| Wasakhaynta iftiinka xoogga badan | |||
Jaantus faahfaahsan
