Substrates-ka N-Nooca SiC ee isku-dhafan Dia6inch monocrystaline tayo sare leh iyo substrate tayo hoose leh
Substrates-ka Isku-dhafka ah ee N-Nooca SiC Shaxda halbeegga guud
| 项目Alaabta | 指标Faahfaahinta | 项目Alaabta | 指标Faahfaahinta |
| 直径Dhexroorka | 150±0.2mm | 正 面 ( 硅 面 ) 粗 糙 度 Qummanaanta hore (Si-waji) | Ra≤0.2nm (5μm*5μm) |
| 晶型Nooc polytype ah | 4H | Cidhifka Edge, Xoq, Dildilaac (kormeer muuqaal ah) | Midna ma jiro |
| 电阻率Iska caabin | 0.015-0.025ohm ·cm | 总厚度变化TV-ga | ≤3μm |
| Dhumucda lakabka wareejinta | ≥0.4μm | 翘曲度Duub | ≤35μm |
| 空洞Waxba kama jiraan | ≤5ea/wafer (2mm>D>0.5mm) | 总厚度Dhumucda | 350±25μm |
Magaca "N-nooca" waxaa loola jeedaa nooca doping-ka loo isticmaalo agabka SiC. Fiisikiska semiconductor-ka, doping-ku wuxuu ku lug leeyahay in si ula kac ah loogu soo bandhigo wasakhda semiconductor-ka si loo beddelo sifooyinkiisa korontada. Doping-ka nooca N-ga wuxuu soo bandhigaa walxo bixiya xad-dhaaf ah oo elektaroono bilaash ah, taasoo siinaysa walxaha mid leh diirad taban.
Faa'iidooyinka substrates-ka isku-dhafka ah ee N-type SiC waxaa ka mid ah:
1. Waxqabadka heerkulka sare: SiC waxay leedahay kuleyl aad u sarreeya waxayna ku shaqayn kartaa heerkul sare, taasoo ka dhigaysa mid ku habboon codsiyada elektaroonigga ah ee awoodda sare leh iyo kuwa soo noqnoqda.
2. Danab jabitaan sare leh: Agabka SiC wuxuu leeyahay danab jabitaan sare leh, taasoo u suurta gelinaysa inay u adkeystaan goobaha korantada sare iyada oo aan lahayn jabitaan koronto.
3. Iska caabbinta kiimikada iyo deegaanka: SiC waa mid kiimiko ahaan u adkaysta waxayna u adkaysan kartaa xaaladaha deegaanka ee adag, taasoo ka dhigaysa mid ku habboon in loo isticmaalo codsiyada adag.
4. Hoos u dhaca korontada: Marka la barbardhigo agabka dhaqameed ee ku salaysan silikoon, substrates-ka SiC waxay awood u siinayaan beddelka korontada oo hufan waxayna yareeyaan luminta korontada ee aaladaha elektarooniga ah.
5. Ballaca ballaaran: SiC waxay leedahay ballaca ballaaran, taasoo u oggolaanaysa horumarinta aaladaha elektaroonigga ah ee ku shaqayn kara heerkul sare iyo cufnaanta awoodda sare.
Guud ahaan, substrates-ka isku-dhafka ah ee N-type SiC waxay bixiyaan faa'iidooyin muhiim ah oo ku saabsan horumarinta aaladaha elektaroonigga ah ee waxqabadka sare leh, gaar ahaan codsiyada halkaas oo hawlgalka heerkulka sare, cufnaanta awoodda sare, iyo beddelka awoodda hufan ay muhiim yihiin.