LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6inch Orientaiton Y-42°/36°/108° Dhumucdiisuna 250-500um

LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Dhumucdiisuna 250-500um Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Wafers-ka LiTaO₃ waxay matalaan nidaam muhiim ah oo walxaha piezoelectric iyo ferroelectric ah, iyagoo muujinaya isku-dhafka piezoelectric ee gaarka ah, xasilloonida kulaylka, iyo sifooyinka indhaha, taasoo ka dhigaysa kuwo aan lagama maarmaan u ah shaandheeyayaasha hirarka acoustic-ga dusha sare (SAW), resonators-ka hirarka acoustic-ga badan (BAW), modulators-ka indhaha, iyo dareemayaasha infrared-ka. XKH waxay ku takhasustay R&D iyo wax soo saarka wafer-ka LiTaO₃ ee tayo sare leh, iyadoo adeegsanaysa korriinka kiristaalka Czochralski (CZ) ee horumarsan iyo hababka epitaxy-ga wejiga dareeraha ah (LPE) si loo hubiyo isku-dhafka kiristaalka ee sare leh cufnaanta cilladaha <100/cm².

XKH waxay bixisaa wafer LiTaO₃ ah oo 3-inji ah, 4-inji ah, iyo 6-inji ah oo leh jihooyin badan oo crystallographic ah (X-cut, Y-cut, Z-cut), oo taageeraya daaweynta doping-ka ee la habeeyey (Mg, Zn) iyo poling-ka si loo daboolo shuruudaha codsiga gaarka ah. Joogtada dielectric-ka ee walaxda (ε~40-50), isku-dhafka piezoelectric (d₃₃~8-10 pC/N), iyo heerkulka Curie (~600°C) waxay LiTaO₃ u yihiin substrate-ka la doorbidayo ee shaandheeyayaasha soo noqnoqda sare iyo dareemayaasha saxda ah.

Wax-soo-saarkeenna isku-dhafan ee toosan wuxuu daboolayaa koritaanka kiristaalka, wafering-ka, nadiifinta, iyo kaydinta filimada khafiifka ah, iyadoo awoodda wax-soo-saarka bishii ay ka badan tahay 3,000 wafer si loogu adeego isgaarsiinta 5G, elektaroonigga macaamiisha, photonics, iyo warshadaha difaaca. Waxaan bixinnaa la-talin farsamo oo dhammaystiran, qeexitaan muunad ah, iyo adeegyo tijaabo ah oo mug yar si loo bixiyo xalalka LiTaO₃ ee la hagaajiyay.

Noo soo dir emayl

Astaamaha

Xuduudaha farsamada

Magaca	LiTaO3 heerka indhaha	Heerka miiska codka LiTaO3
Axial	Goynta Z + / - 0.2 °	36 ° Y jarid / 42 ° Y jarid / X jarid(+ / - 0.2 °)
Dhexroorka	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Diyaaradda Datum	22mm + / - 2mm	22mm +/-2mm32mm +/-2mm
Dhumucda	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TV-ga	≤ 10um	≤ 10um
Heerkulka Curie	605 °C + / - 0.7 °C (Habka DTA)	605 °C + / -3 °C (Habka DTA)
Tayada dusha sare	Nadiifinta laba-geesoodka ah	Nadiifinta laba-geesoodka ah
Cidhifyada Chamfered	wareegsanaan gees ah	wareegsanaan gees ah

Astaamaha Muhiimka ah

1. Qaab-dhismeedka Crystal iyo Waxqabadka Korantada

· Xasiloonida kiristaaliga: 100% 4H-SiC oo ah nooca polytype, eber ku darista multicrystalline (tusaale ahaan, 6H/15R), oo leh qalooca ruxaya XRD oo ballac buuxa leh oo ah nus-ugu badnaan (FWHM) ≤32.7 arcsec.
· Dhaqdhaqaaqa Qaadaha Sare: Dhaqdhaqaaqa elektarooniga ah ee 5,400 cm²/V·s (4H-SiC) iyo dhaqdhaqaaqa godadka oo ah 380 cm²/V·s, taasoo suurtogalinaysa naqshadaha qalabka soo noqnoqda sare.
· Adkaanta Shucaaca: Waxay u adkaysataa shucaaca neutron-ka 1 MeV iyadoo heerka dhaawaca barokaca uu yahay 1 × 10¹⁵ n/cm², oo ku habboon codsiyada hawada sare iyo nukliyeerka.

2. Guryaha Kuleylka iyo Farsamada

· Qaboojinta Kulaylka ee Gaarka ah: 4.9 W/cm·K (4H-SiC), saddex jibaaran oo silicon ah, oo taageera hawlgalka ka sarreeya 200°C.
· Isku-darka Ballaarinta Kulaylka Hoose: CTE oo ah 4.0×10⁻⁶/K (25–1000°C), hubinta iswaafajinta baakadaha ku salaysan silikoon iyo yareynta cadaadiska kulaylka.

3. Xakamaynta iyo Saxnaanta Habaynta Cilladda
;
· Cufnaanta dhuumaha yaryar: <0.3 cm⁻² (8-inji wafers), cufnaanta kala-baxa <1,000 cm⁻² (lagu xaqiijiyay iyada oo loo marayo KOH etching).
· Tayada Dusha Sare: CMP-la safeeyey ilaa Ra <0.2 nm, iyadoo la buuxinayo shuruudaha heerka fidsan ee heerka lithography ee EUV.

Codsiyada Muhiimka ah

Domain-ka	Xaaladaha Codsiga	Faa'iidooyinka Farsamada
Isgaarsiinta Indhaha	100G/400G leysarka, modules isku-dhafan oo silicon photonics ah	Substrates-ka abuurka InP waxay awood u siinayaan farqiga tooska ah (1.34 eV) iyo heteroepitaxy-ga ku salaysan Si, taasoo yaraynaysa luminta isku xidhka indhaha.
Gawaarida Tamarta Cusub	Dareewalada korantada sare ee 800V, kuwa lagu dallaco (OBC)	Substrates-ka 4H-SiC waxay u adkeysan karaan >1,200 V, taasoo yareyneysa khasaaraha gudbinta 50% iyo mugga nidaamka 40%.
Isgaarsiinta 5G	Qalabka RF-ga ee Millimeter-hirka (PA/LNA), kor u qaadayaasha awoodda saldhigga saldhigga	Substrates-ka SiC ee nus-dabool ah (iska caabinta >10⁵ Ω·cm) waxay suurtageliyaan isku-darka dadban ee soo noqnoqda sare (60 GHz+).
Qalabka Warshadaha	Dareemayaasha heerkulka sare, transformers-ka hadda jira, kormeerayaasha fal-galka nukliyeerka	Substrates-ka abuurka InSb (0.17 eV bandgap) waxay bixiyaan xasaasiyad birlab ah ilaa 300% @ 10 T.

Wafers LiTaO₃ - Astaamaha Muhiimka ah

1. Waxqabadka Sare ee Piezoelectric

· Isku-dhafka sare ee piezoelectric (d₃₃~8-10 pC/N, K²~0.5%) wuxuu awood u siinayaa aaladaha SAW/BAW ee soo noqnoqda sare leh iyadoo gelinta ay lumiso <1.5dB shaandheeyayaasha RF 5G

· Isku xidhka elektaroonigga ah ee aadka u fiican wuxuu taageeraa naqshadaha shaandhaynta ee ballaaran (≥5%) ee codsiyada sub-6GHz iyo mmWave

2. Astaamaha Indhaha

· Hufnaanta ballaaran (>70% gudbinta laga bilaabo 400-5000nm) ee modulators-ka elektiroonigga ah ee gaaraya ballac ballaaran oo ka badan 40GHz

· Nuglaanta indhaha ee aan tooska ahayn (χ⁽²⁾~30pm/V) waxay sahlaysaa jiilka iswaafajinta labaad ee hufan (SHG) ee nidaamyada laysarka

3. Xasiloonida Deegaanka

· Heerkulka Curie Sare (600°C) wuxuu ilaaliyaa jawaabta piezoelectric ee jawiga baabuurta (-40°C ilaa 150°C)

· Dareeraha kiimikada ee ka dhanka ah asiidhyada/alkaliyada (pH1-13) wuxuu hubiyaa isku halaynta codsiyada dareemayaasha warshadaha

4. Awoodaha Habaynta

· Injineernimada jihaynta: X-cut (51°), Y-cut (0°), Z-cut (36°) oo loogu talagalay jawaabaha piezoelectric ee loogu talagalay

· Xulashooyinka daawada: Mg-doped (iska caabbinta waxyeelada indhaha), Zn-doped (d₃₃ oo la xoojiyay)

· Dhammaystirka dusha sare: Nadiifinta Epitaxial-ready (Ra<0.5nm), biraha ITO/Au

Wafers LiTaO₃ - Codsiyada Aasaasiga ah

1. Modules-yada Hore ee RF

· Shaandheeyayaasha 5G NR SAW (Xiddiga n77/n79) oo leh isku-darka heerkulka soo noqnoqda (TCF) <|-15ppm/°C|

· Resonators-ka BAW ee aadka u ballaaran ee loogu talagalay WiFi 6E/7 (5.925-7.125GHz)

2. Sawir-qaadista Isku-dhafan

· Modulator-yada xawaaraha sare leh ee Mach-Zehnder (>100Gbps) ee isgaarsiinta indhaha ee isku dhafan

· Qalabka ogaanshaha infrared-ka QWIP oo leh hirarka goynta oo laga beddeli karo 3-14μm

3. Elektarooniga Gawaarida

· Dareemayaasha baarkinka ee Ultrasonic oo leh > 200kHz inta jeer ee hawlgalka

· Transducer-yada TPMS ee ka badbaaday wareegga kulaylka -40°C ilaa 125°C

4. Nidaamyada Difaaca

· Shaandheeyayaasha qaataha EW oo leh > 60dB diidmo ka baxsan xarigga

· Daaqadaha IR-ga ee gantaalada raadinaya ayaa gudbinaya shucaaca 3-5μm MWIR

5. Teknoolojiyada Soo Kordhaysa

· Qalabka beddelka kuantumka indhaha ee loogu talagalay beddelka microwave-ka ilaa indhaha

· Qalabka PMUT ee sawir-qaadista ultrasound-ka caafimaadka (> 20MHz xallinta)

Wafers LiTaO₃ - Adeegyada XKH

1. Maareynta Silsiladda Sahayda

· Habaynta Boule-to-wafer oo leh waqti hogaamineed oo 4 toddobaad ah oo loogu talagalay qeexitaannada caadiga ah

· Wax soo saar kharash-ool ah oo keenaya faa'iido 10-15% ah marka loo eego tartamayaasha

2. Xalalka Gaarka ah

· Wafering-ka gaarka ah ee jihada: 36°±0.5° Y-jarid si loo helo waxqabadka SAW ee ugu wanaagsan

· Halabuurka daawada la mariyey: MgO (5mol%) daawada lagu mariyo ee loogu talagalay isticmaalka indhaha

Adeegyada Bir-samaynta: Qaabaynta elektroodka Cr/Au (100/1000Å)

3. Taageerada Farsamada

· Astaamaha walxaha: Qaloocyada ruxitaanka XRD (FWHM <0.01°), falanqaynta dusha sare ee AFM

· Jilitaanka qalabka: Moodeelidda FEM ee loogu talagalay hagaajinta naqshadeynta shaandhada SAW

Gunaanad

Wafers-ka LiTaO₃ waxay sii wadaan inay awood u siiyaan horumarinta tignoolajiyada isgaarsiinta RF, photonics-ka isku dhafan, iyo dareemayaasha deegaanka ee adag. Khibradda agabka ee XKH, saxnaanta wax soo saarka, iyo taageerada injineernimada codsiga waxay ka caawiyaan macaamiisha inay ka gudbaan caqabadaha naqshadeynta ee nidaamyada elektaroonigga ah ee jiilka soo socda.