LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6

Sharaxaad Gaaban:

Waferrada LiTaO₃ waxay u taagan yihiin nidaamka wax-soo-saarka piezoelectric iyo ferroelectric, oo muujinaya isku-xireyaasha piezoelectric gaar ah, xasilloonida kulaylka, iyo guryaha indhaha, taasoo ka dhigaysa lama huraan u ah mowjadaha acoustic ee dusha sare (SAW) filtarrada, mowjadaha acoustic mowjadda (BAW) resonators, modulators indhaha, iyo baarayaasha infrared. XKH waxay ku takhasustay tayada sare ee LiTaO₃ wafer R&D iyo wax soo saar, iyadoo adeegsanaysa korriinka Czochralski (CZ) horumarsan iyo geedi socodka dareeraha wejiga epitaxy (LPE) si loo hubiyo isku midaanshaha crystalline sare oo leh cufnaanta cilladaha <100/cm².

XKH waxay bixisaa 3-inji, 4-inji, iyo 6-inch LiTaO₃ wafers oo leh hanuunin badan oo crystallographic ah (X-cut, Y-cut, Z-cut), taageeraya daawaynta la habeeyey (Mg, Zn) iyo daawaynta poling si loo buuxiyo shuruudaha codsiga gaarka ah. Maaddada joogtada ah ee dielectric (ε ~ 40-50), piezoelectric coefficient (d₃₃ ~ 8-10 pC/N), iyo heerkulka Curie (~ 600 ° C) dhiso LiTaO₃ sida substrate doorbiday filtarrada-soo noqnoqda sare iyo dareemayaal sax ah.

Wax soo saarkeena tooska ah ee isku dhafan wuxuu daboolayaa koritaanka crystal, wafering, polishing, iyo dhigista filim khafiif ah, oo leh awood wax soo saar bishiiba ka badan 3,000 wafers si loogu adeego isgaarsiinta 5G, elektiroonigga macaamiisha, sawirada sawirada, iyo warshadaha difaaca. Waxaan bixinaa la-talin farsamo oo dhameystiran, sifada muunada, iyo adeegyada qaabaynta mugga hoose si loo bixiyo xalalka LiTaO₃ la hagaajiyay.

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Astaamaha

Xuduudaha farsamada

Magaca	Heerka indhaha ee LiTaO3	Heerka miiska codka LiTaO3
Axial	Z gooyay +/- 0.2 °	36 ° Y gooyay / 42 ° Y gooyay / gooyn X(+ / - 0.2 °)
Dhexroorka	76.2mm + / - 0.3mm/100± 0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Diyaarada Datum	22mm +/-2mm	22mm +/-2mm32mm +/-2mm
Dhumucda	500um +/-5mm1000um +/-5mm	500um +/-20mm350um +/-20mm
TTV	≤ 10um	≤ 10um
Heerkulka Curie	605 °C +/- 0.7 °C (Qaabka DTA)	605 °C +/ -3 °C (Qaabka DTA
Tayada dusha sare	Naaxinta labada dhinac	Naaxinta labada dhinac
Cidhifyada la jarjaray	wareega gees	wareega gees

Astaamaha Muhiimka ah

1.Crystal Structure iyo Waxqabadka Korontada

Xasiloonida Crystallographic: 100% 4H-SiC xukunka nooca badan, eber ka mid ahaanshaha multicrystalline (tusaale, 6H/15R), oo leh XRD ruxitaanka qalooca oo dhan ballac badhkii (FWHM) ≤32.7 arcsec.
Dhaqdhaqaaqa Qaade Sare: Dhaqdhaqaaqa korantada ee 5,400 cm²/V·s (4H-SiC) iyo socodka dalool ee 380 cm²/V·s, taas oo awood u siinaysa naqshadaynta aaladaha soo noqnoqda.
Qallafsanaanta Shucaaca: Waxay u adkaysataa 1 MeV neutron irradiation oo leh heerka dhaawaca barokaca ee 1 × 10¹⁵ n/cm², ku habboon hawada hawada iyo codsiyada nukliyeerka.

2.Guryaha kulaylka iyo makaanikada

Habdhaqanka kulaylka ee aan caadiga ahayn: 4.9 W/cm · K (4H-SiC), saddex jibaarma silikoon, hawlgalka taageeraya ee ka sarreeya 200°C.
Iskuxidhka Balaadhinta kulaylka Hoose: CTE ee 4.0×10⁻⁶/K (25–1000°C), hubinta in ay waafaqsan yihiin baakadaha silikoon-ku-salaysan iyo yaraynta diiqada kulaylka.

3.Xakamaynta cilladda iyo saxnaanta habaynta
;
Cufnaanta tuubbooyinka yar yar: <0.3 cm⁻² (8-inch wafers), cufnaanta kala-baxa <1,000 cm⁻² (lagu xaqiijiyay KOH etching).
Tayada dusha sare: CMP-oo la safeeyey ilaa Ra <0.2 nm, oo buuxinaysa shuruudaha siman ee darajada lithography ee EUV.

Codsiyada Muhiimka ah

Domain	Dhacdooyinka Codsiga	Faa'iidooyinka Farsamada
Isgaarsiinta indhaha	100G/400G leysarka, Silicon photonics modules hybrid	Substrates abuurka InP waxay awood u siinaysaa bandheynta tooska ah (1.34 eV) iyo heteroepitaxy-ku-salaysan, taasoo yaraynaysa khasaaraha isku xidhka indhaha.
Baabuurta Tamarta Cusub	800V rogayaasha korantada sare leh, dabaysha dusha saaran (OBC)	4H-SiC substrates waxay u adkeysanayaan> 1,200 V, hoos u dhigista khasaaraha socodka 50% iyo mugga nidaamka 40%.
Isgaarsiinta 5G	Aaladaha RF millimeter-mowjadaha (PA/LNA), cod-weyneyaasha saldhigga saldhigga	Substrates-ka-soo-jiidashada SiC (iska-caabbinta>10⁵ Ω·cm) waxay awood u siinaysaa soo noqnoqoshada sare (60 GHz+) is-dhexgalka dadban.
Qalabka Warshadaha	Dareemayaal heerkul sare leh, Transformers hadda, kormeerayaasha reactor nuclear	Substrates abuurka InSb (0.17 eV bandgap) waxay keenaan dareenka magnetka ilaa 300%@10 T.

LiTaO₃ Wafers - Astaamaha Muhiimka ah

1. Waxqabadka Piezoelectric Sare

Isku-xireyaasha piezoelectric sare (d₃₃ ~ 8-10 pC/N, K² ~ 0.5%) waxay awood u siinayaan aaladaha SAW/BAW-soo noqnoqda sare leh oo leh luminta gelinta <1.5dB ee 5G RF filtarrada

Isku xidhka makaanikada elektiroonigga ah ee aad u wanaagsan waxa ay taageertaa nashqadaha shaandhaynta shaandhada ee codsiyada-6GHz iyo mmWave

2. Qalabka indhaha

Daah-furnaanta Broadband (> 70% gudbinta laga bilaabo 400-5000nm) ee modulators electro-optic oo gaaraya> 40GHz bandwidth

U nuglaanshaha indhaha ee xooggan ee aan toos ahayn (χ⁽²⁾ ~ 30pm/V) waxa ay sahlaysa jiilka labaad ee iswaafajinta (SHG) ee hababka laysarka

3. Deganaanshiyaha Deegaanka

Heerkulka Curie Sare (600°C) wuxuu ilaaliyaa jawaabta piezoelectric ee heerka baabuurta (-40°C ilaa 150°C) deegaanka

Kiimikada ka soo horjeeda asiidhka/alkaliyada (pH1-13) waxay hubisaa isku halaynta codsiyada dareemayaasha warshadaha

4. Awoodaha is-beddelka

Injineernimada hanuuninta: X-cut (51°), Y-cut (0°), jar-jarka (36°) ee jawaabaha piezoelectric ee ku habboon

Ikhtiyaarada doping: Mg-doped (caabbinta waxyeelada indhaha), Zn-doped (d₃₃ la xoojiyay)

Dusha sare ayaa dhammaatay: suufka Epitaxial u diyaarsan (Ra<0.5nm), ITO/Au metallization

LiTaO₃ Wafers - Codsiyada aasaasiga ah

1. RF Front-Dhammaadka Modules

5G NR SAW filtarrada (Band n77/n79) oo leh isugaynta heerkulka inta jeer (TCF) <|-15ppm/°C|

Soosaarayaasha BAW-ballaaran ee aadka u ballaadhan ee WiFi 6E/7 (5.925-7.125GHz)

2. Sawirada isku dhafan

Modulators Mach-Zehnder-xawaaraha sarreeya (> 100Gbps) ee isgaarsiinta indhaha ee isku xiran

Qalabka infrared QWIP oo leh mawjadaha dhererka la jaray ee la hagaajin karo laga bilaabo 3-14μm

3. Gawaarida Elektarooniga ah

· Dareemayaasha baarkinka Ultrasonic oo leh>200kHz inta jeer ee shaqaynaysa

TPMS transducers piezoelectric oo badbaaday -40°C ilaa 125°C baaskiil kulaylka

4. Nidaamyada Difaaca

Shaandheeyayaasha EW oo leh> 60dB diidmo ka baxsan band

· Gantaal doonka IR daaqadaha gudbinaya 3-5μm shucaaca MWIR

5. Farsamooyinka soo baxaya

Turjubayaasha quantum-ka indhaha ee mikrowave-u-beddelka indhaha

Qalabka PMUT ee sawirka ultrasound ee caafimaadka (> xallinta 20MHz)

LiTaO₃ Wafers - Adeegyada XKH

1. Maareynta Silsilada Supply

· Ka-hortagista bule-to-wafer oo leh 4-toddobaad wakhtiga hogaanka ah ee tilmaamaha caadiga ah

Wax soo saarka qiimaha la hagaajiyay oo keenaya 10-15% faa'iidada qiimaha marka loo eego tartamayaasha

2. xalalka gaarka ah

Wafering-gaar ah hanuuninta: 36°±0.5° Y-goynta waxqabadka SAW ee ugu fiican

· Halabuurka doped: MgO (5mol%) doping ee codsiyada indhaha

Adeegyada biraha: Cr/Au (100/1000Å) naqshadaynta korantada

3. Taageerada Farsamada

Sifada walxaha: XRD qalooca ruxaya (FWHM <0.01°), falanqaynta dusha sare ee AFM

Jilidda aaladda: qaabaynta FEM ee hagaajinta naqshadaynta shaandhada SAW

Gabagabo

Waferrada LiTaO₃ waxay sii wadaan inay awood u yeeshaan horumarka tignoolajiyada ee guud ahaan isgaarsiinta RF, sawir-qaadista isku dhafan, iyo dareemayaasha deegaanka adag. Khibrada agabka XKH, saxnaanta wax soo saarka, iyo taageerada injineernimada codsiga ayaa ka caawiya macaamiisha inay ka gudbaan caqabadaha naqshadeynta ee nidaamyada elektiroonigga ah ee soo socda.