Wafer LNOI (Lithium Niobate oo ku jira Insulator) Isgaarsiinta Dareemaha Koronto-Optic Sare
Jaantus Faahfaahsan
Dulmar Guud
Gudaha sanduuqa wafer-ka waxaa ku yaal godad siman, cabbirkooduna waa isku mid si ay u taageeraan labada dhinac ee wafer-ka. Sanduuqa kiristaalka ah guud ahaan wuxuu ka samaysan yahay walxo balaastig ah oo hufan oo PP ah kaas oo u adkaysta heerkulka, xirashada iyo korontada taagan. Midabada kala duwan ee waxyaabaha lagu daro ayaa loo isticmaalaa in lagu kala saaro qaybaha habka birta ee wax soo saarka semiconductor-ka. Sababtoo ah cabbirka yar ee muhiimka ah ee semiconductor-yada, qaababka cufan, iyo shuruudaha cabbirka walxaha aadka u adag ee wax soo saarka, sanduuqa wafer-ka waa in la damaanad qaadaa jawi nadiif ah si loogu xiro godka falcelinta sanduuqa deegaanka ee mashiinnada wax soo saarka ee kala duwan.
Habka Sameynta
Sameynta wafer-yada LNOI waxay ka kooban tahay dhowr tallaabo oo sax ah:
Tallaabada 1aad: Ku-tallaalidda Helium IonAayoonnada Helium waxaa lagu soo geliyaa kiristaal LN badan iyadoo la adeegsanayo qalab lagu dhejiyo ion. Aayoonnadani waxay ku hoydaan qoto dheer, iyagoo sameeya meel daciif ah oo ugu dambeyntii sahlaysa kala-goynta filimka.
Tallaabada 2: Samaynta Substrate-ka Salka ahWafer silicon ama LN ah oo gooni ah ayaa lagu oksaydhiyaa ama lagu dahaadhaa SiO2 iyadoo la adeegsanayo PECVD ama oksaydhis kuleyl. Dusha sare ee dusha sare waa la qorsheeyay si loogu xidho si fiican.
Tallaabada 3: Ku xidhidda LN ee Substrate-kaKilristaalka LN ee lagu beeray ion-ka ayaa la rogrogaa oo lagu dhejiyaa wafer-ka salka iyadoo la adeegsanayo isku xidhka wafer-ka tooska ah. Goobaha cilmi-baarista, benzocyclobutene (BCB) waxaa loo isticmaali karaa sidii dhejis si loo fududeeyo isku xidhka xaaladaha aan adkayn.
Tallaabada 4: Daaweynta Kulaylka iyo Kala-soocidda FilimadaQaboojinta waxay kicisaa sameynta xumbo qoto dheer oo la geliyay, taasoo suurtogalinaysa kala soocida filimka khafiifka ah (lakabka sare ee LN) iyo qaybta ugu badan. Xoogga farsamada ayaa loo isticmaalaa in lagu dhammeeyo xoqidda.
Tallaabada 5: Nadiifinta Dusha SareNadiifinta Mechanical Chemical (CMP) waxaa loo adeegsadaa si loo simo dusha sare ee LN, taasoo hagaajinaysa tayada indhaha iyo wax soo saarka qalabka.
Halbeegyada Farsamada
| Alaab | Aragti ahaan Fasal LiNbO3 buskudka (Caddaan) or Madow) | |
| Curie Heerkulka | 1142±0.7℃ | |
| Jarid Xagasha | X/Y/Z iwm. | |
| Dhexroor/cabbir | 2”/3”/4” ±0.03mm | |
| Tol(±) | <0.20 mm ±0.005mm | |
| Dhumucda | 0.18 ~ 0.5mm ama ka badan | |
| Aasaasiga ah Fidsan | 16mm/22mm/32mm | |
| TV-ga | <3μm | |
| Qaansada | -30 | |
| Duub | <40μm | |
| Jihaynta Fidsan | Dhammaantood waa la heli karaa | |
| Dusha sare Nooca | Dhinac Hal La Safeeyey (SSP)/Dhinac Laba Dhinac La Safeeyey (DSP) | |
| La safeeyey dhinaca Ra | <0.5nm | |
| S/D | 20/10 | |
| Gees Shuruudaha | R=0.2mm Nooca C-ga or Sanka Bull | |
| Tayada | Bilaash of dildilaac (xumbo) iyo ku darista) | |
| Aragti ahaan la daweeyay | Mg/Fe/Zn/MgO iwm. ee indhaha darajo LN buskudka halkii la codsaday | |
| Wafer Dusha sare Shuruudaha | Tusmada Refractive | Maya=2.2878/Ne=2.2033 @632nm habka isku xidhka hirarka/prism. |
| Wasakhowga, | Midna ma jiro | |
| Walxaha c>0.3μ m | <=30 | |
| Xoq, jajabin | Midna ma jiro | |
| Cilad | Ma jiraan dildilaacyo gees ah, xoqan, calaamado miinshaar, iyo wasakh | |
| Baakad | Sanduuqa Tirada/Wafer-ka | 25 xabbo sanduuq kasta |
Kiisaska Isticmaalka
Iyada oo ay ugu wacan tahay kala duwanaansho iyo waxqabadkeeda, LNOI waxaa loo isticmaalaa warshado badan:
Sawirrada:Modulator-yo is haysta, multiplexers, iyo wareegyada photonic.
RF/Acoustik:Modulator-yada Acousto-optic, shaandheeyayaasha RF.
Xisaabinta Kutaanta:Isku-darka soo noqnoqda ee aan tooska ahayn iyo matoorrada isku-dhafka ah ee loo yaqaan 'photon-pair'.
Difaaca iyo Hawada Sare:Qalabka indhaha ee luminta yar, aaladaha beddelka soo noqnoqda.
Qalabka Caafimaadka:Dareemayaasha bayoolojiga indhaha iyo baaritaannada calaamadaha soo noqnoqda sare leh.
Su'aalaha Badiya La Weydiiyo
S: Maxaa LNOI looga doorbiday SOI nidaamyada indhaha?
A:LNOI waxay leedahay isku-xidhnaan koronto-optic oo heer sare ah iyo kala duwanaansho hufnaan oo ballaaran, taasoo suurtogalinaysa waxqabad sare oo ku yimaada wareegyada photonic.
S: CMP ma qasab baa ka dib kala qaybsanaanta?
A:Haa. Dusha sare ee LN ee la soo bandhigay waa mid qallafsan ka dib jarista ion-ka waana in la safeeyaa si loo buuxiyo shuruudaha heerka indhaha.
S: Waa maxay cabbirka ugu badan ee wafer-ka la heli karo?
A:Waferada ganacsiga ee LNOI badanaa waa 3" iyo 4", inkastoo qaar ka mid ah alaab-qeybiyeyaasha ay sameynayaan noocyo 6" ah.
S: Ma lakabka LN dib loo isticmaali karaa ka dib kala-goynta?
A:Kilaastiga salka ah dib ayaa loo safayn karaa oo dib ayaa loo isticmaali karaa dhowr jeer, inkastoo tayadu ay hoos u dhici karto ka dib wareegyo badan.
S: Ma la jaanqaadi karaan wafer-ka LNOI iyo habaynta CMOS?
A:Haa, waxaa loogu talagalay inay la jaanqaadaan hababka wax soo saarka semiconductor-ka caadiga ah, gaar ahaan marka la isticmaalo substrate-ka silicon.
