Wafer LiTaO3 2inji-8inji 10x10x0.5 mm 1sp 2sp oo loogu talagalay Isgaarsiinta 5G/6G

Sharaxaad Gaaban:

Wafer LiTaO3 (wafer lithium tantalate), oo ah walax muhiim u ah semiconductors-ka jiilka saddexaad iyo optoelectronics, waxay ka faa'iidaysataa heerkulkeeda sare ee Curie (610°C), baaxadda hufnaanta ballaaran (0.4-5.0 μm), isku-dhafka sare ee piezoelectric (d33 > 1,500 pC/N), iyo luminta dielectric hooseeya (tanδ < 2%) si ay u kacaan isgaarsiinta 5G, isdhexgalka photonic, iyo aaladaha quantum. Iyada oo la adeegsanayo teknoolojiyada wax soo saarka ee horumarsan sida gaadiidka uumiga jirka (PVT) iyo dhigista uumiga kiimikada (CVD), XKH waxay bixisaa wafer X/Y/Z-cut, 42°Y-cut, iyo wafers marmar ah oo leh qaab 2-8-inch ah, oo leh qallafsanaanta dusha sare (Ra) <0.5 nm iyo cufnaanta micropipe <0.1 cm⁻². Adeegyadayadu waxay ka kooban yihiin doping Fe, dhimista kiimikada, iyo isdhexgalka Smart-Cut ee kala duwan, iyadoo wax ka qabanaysa shaandheeyayaasha indhaha ee waxqabadka sare leh, dareemayaasha infrared-ka, iyo ilaha iftiinka quantum. Maaddadani waxay horseeddaa horumarro ku yimaada yareynta, hawlgalka soo noqnoqda sare, iyo xasilloonida kulaylka, taasoo dardar gelinaysa beddelka gudaha ee teknoolojiyada muhiimka ah.

Noo soo dir emayl

Astaamaha

Xuduudaha farsamada

Magaca	LiTaO3 heerka indhaha	Heerka miiska codka LiTaO3
Axial	Goynta Z + / - 0.2 °	36 ° Y jarid / 42 ° Y jarid / X jarid (+ / - 0.2 °)
Dhexroorka	76.2mm + / - 0.3mm/ 100±0.2mm	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm
Diyaaradda Datum	22mm + / - 2mm	22mm +/-2mm 32mm +/-2mm
Dhumucda	500um + /-5mm 1000um + /-5mm	500um + /-20mm 350um + /-20mm
TV-ga	≤ 10um	≤ 10um
Heerkulka Curie	605 °C + / - 0.7 °C (Habka DTA)	605 °C + / -3 °C (Habka DTA)
Tayada dusha sare	Nadiifinta laba-geesoodka ah	Nadiifinta laba-geesoodka ah
Cidhifyada Chamfered	wareegsanaan gees ah	wareegsanaan gees ah

Astaamaha Muhiimka ah

1. Waxqabadka korantada iyo indhaha
· Koronto-Optic Coefficient: r33 wuxuu gaaraa 30 pm/V (X-cut), 1.5× ayuu ka sarreeyaa LiNbO3, taasoo suurta gelinaysa habaynta elektaroonigga ah ee aadka u ballaaran (>40 GHz bandwidth).
· Jawaabta Balaadhan ee Muuqaalada: Kala duwanaanshaha gudbinta 0.4–5.0 μm (dhumucda 8 mm), oo leh gees nuugista ultraviolet-ka oo hooseeya ilaa 280 nm, oo ku habboon laysarka UV iyo aaladaha dhibcaha quantum.
· Isku-xidhka Pyroelectric-ga ee Hoose: dP/dT = 3.5×10⁻⁴ C/(m²·K), taasoo hubinaysa xasilloonida dareemayaasha infrared-ka heerkulka sare leh.

2. Guryaha Kuleylka iyo Farsamada
· Wareegga Kulaylka Sare: 4.6 W/m·K (X-cut), afar jibbaaran oo ah quartz, wareegga kulaylka -200–500°C oo joogto ah.
· Isku-darka Ballaarinta Kulaylka Hoose: CTE = 4.1×10⁻⁶/K (25–1000°C), oo la jaan qaadaya baakadaha silikoon si loo yareeyo cadaadiska kulaylka.
3. Xakamaynta iyo Saxnaanta Khaladka
· Cufnaanta dhuumaha yaryar: <0.1 cm⁻² (8-inji wafers), cufnaanta kala-baxa <500 cm⁻² (lagu xaqiijiyay iyada oo loo marayo KOH etching).
· Tayada Dusha Sare: CMP-la safeeyey ilaa Ra <0.5 nm, iyadoo la buuxinayo shuruudaha heerka fidsan ee heerka lithography ee EUV.

Codsiyada Muhiimka ah

Domain	Xaaladaha Codsiga	Faa'iidooyinka Farsamada
Isgaarsiinta Indhaha	100G/400G DWDM lasers, modules isku-dhafan oo silicon photonics ah	Gudbinta baaxadda leh ee LiTaO3 wafer iyo luminta hagaha hirarka oo hooseeya (α <0.1 dB/cm) waxay suurtagelinaysaa ballaarinta xarkaha C.
Isgaarsiinta 5G/6G	Shaandheeyayaasha SAW (1.8–3.5 GHz), shaandheeyayaasha BAW-SMR	Waferada 42° Y-cut waxay gaaraan Kt² >15%, iyagoo keenaya luminta gelinta oo hooseysa (<1.5 dB) iyo rogidda sare (>30 dB).
Tiknoolajiyada Quantum	Qalabka ogaanshaha hal-foton, ilo-is-weydaarsi hoos-u-dhac ah	Isku-dhafka sare ee aan tooska ahayn (χ(2) = 40 pm/V) iyo heerka tirada mugdiga ah oo hooseeya (<100 tirinta/s) waxay kor u qaadaan daacadnimada tirada.
Dareenka Warshadaha	Dareemayaasha cadaadiska heerkulka sare, transformers-ka hadda jira	Jawaabta piezoelectric-ka ee LiTaO3 wafer (g33 >20 mV/m) iyo dulqaadka heerkulka sare (>400°C) waxay ku habboon yihiin jawi aad u daran.

Adeegyada XKH

1. Sameynta Wafer-ka Gaarka ah

· Cabbirka iyo Jarida: Wafers 2–8-inji ah oo leh X/Y/Z-cut, 42° Y-cut, iyo jaritaanno xagal gaar ah (±0.01° dulqaad).

· Xakamaynta Daweynta: Fe, Mg doping iyada oo loo marayo habka Czochralski (kala duwanaanshaha xoogga 10¹⁶–10¹⁹ cm⁻³) si loo wanaajiyo isku-dhafka elektiroonigga ah iyo xasilloonida kulaylka.

2. Tiknoolajiyada Habraaca Sare
;
· Tiknoolajiyada Wareega ah (PPLT): Tiknoolajiyada Smart-Cut ee loogu talagalay wafers-ka LTOI, iyadoo la gaarayo saxnaanta muddada domainka ±10 nm iyo beddelka soo noqnoqda ee isku-dhafka ah (QPM).

· Isku-dhafka Kala Duwan: Wafers isku-dhafan oo LiTaO3 ah oo ku salaysan Si (POI) oo leh xakamaynta dhumucda (300–600 nm) iyo conductivity kulaylka ilaa 8.78 W/m·K oo loogu talagalay shaandheeyayaasha SAW ee soo noqnoqda sare leh.

3. Nidaamyada Maareynta Tayada
;
· Tijaabada Dhammaadka-ilaa-Dhamaadka: Raman spectroscopy (xaqiijinta nooca polytype), XRD (crystallinity), AFM (qaab-dhismeedka dusha sare), iyo tijaabada isku-midnimada indhaha (Δn <5×10⁻⁵).

4. Taageerada Silsiladda Sahayda Caalamiga ah
;
· Awoodda Wax-soo-saarka: Wax-soo-saarka bishii ka badan 5,000 oo wafer (8-inji: 70%), oo leh gaarsiin degdeg ah oo 48 saacadood ah.

· Shabakadda Saadka: Daboolida Yurub, Waqooyiga Ameerika, iyo Aasiya-Baasifigga iyada oo loo marayo xamuulka hawada/badda oo leh baakad heerkulku xakamaysan yahay.