LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp ee 5G/6G Isgaarsiinta
Xuduudaha farsamada
Magaca | Heerka indhaha ee LiTaO3 | Heerka miiska codka LiTaO3 |
Axial | Z gooyay +/- 0.2 ° | 36 ° Y gooyay / 42 ° Y gooyay / gooyn X (+ / - 0.2 °) |
Dhexroorka | 76.2mm + / - 0.3mm/ 100± 0.2mm | 76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm |
Diyaarada Datum | 22mm +/-2mm | 22mm +/-2mm 32mm +/-2mm |
Dhumucda | 500um +/-5mm 1000um +/-5mm | 500um +/-20mm 350um +/-20mm |
TTV | ≤ 10um | ≤ 10um |
Heerkulka Curie | 605 °C +/- 0.7 °C (Qaabka DTA) | 605 °C +/ -3 °C (Qaabka DTA |
Tayada dusha sare | Naaxinta labada dhinac | Naaxinta labada dhinac |
Cidhifyada la jarjaray | wareega gees | wareega gees |
Astaamaha Muhiimka ah
1. Waxqabadka Korontada iyo indhaha
Iskuxidhka Electro-Optic: r33 waxa uu gaadhaa 30 pm/V (X-cut), 1.5× ka sareeya LiNbO3, taas oo u sahlaysa ultra-wideband electro-optic modulation (>40 GHz bandwidth).
Jawaabta Spectral Balaadhan: Kala duwanaanta gudbinta 0.4-5.0 μm (dhammaan 8 mm), oo leh cidhifka nuugista ultraviolet oo u hooseeya 280 nm, oo ku habboon laysarka UV iyo aaladaha dhibcaha quantum.
Iskuxidhka Pyroelectric Low: dP/dT = 3.5×10⁻ C/(m²·K), hubinta xasiloonida dareemeyaasha infrared heerkulka sare.
2. Guryaha kuleyliyaha iyo Makaanikada
Heerarka kulaylka sare: 4.6 W/m·K (X-goyn), afar jibaar ka quartz, joogtaynta -200-500°C baaskiil wadida kulaylka.
Iskuxidhka Balaadhinta kulaylka Hoose: CTE = 4.1×10⁻⁶/K (25-1000°C), oo ku habboon baakadaha silikoon si loo yareeyo diiqada kulaylka.
3. Xakamaynta cilladda iyo saxnaanta habaynta
Cufnaanta tuubbooyinka yar yar: <0.1 cm⁻² (8-inch wafers), cufnaanta kala-baxa <500 cm⁻² (lagu xaqiijiyay KOH etching).
Tayada dusha sare: CMP-oo la safeeyey ilaa Ra <0.5 nm, oo buuxinaysa shuruudaha siman ee darajada lithography ee EUV.
Codsiyada Muhiimka ah
Domain | Dhacdooyinka Codsiga | Faa'iidooyinka Farsamada |
Isgaarsiinta indhaha | 100G/400G DWDM leysarka, Silicon photonics modules hybrid | LiTaO3 wafer's gudbinta muuqaalka ballaadhan iyo luminta mawjadaha hoose (α <0.1 dB/cm) waxay awood u siinaysaa ballaarinta C-band. |
Isgaarsiinta 5G/6G | filtarrada SAW (1.8-3.5 GHz), filtarrada BAW-SMR | 42°Y-jeex-jeexan ayaa gaadha Kt²>15%, oo keenaya khasaare galinta hoose (<1.5 dB) iyo duubid sare (> 30 dB). |
Teknolojiyadda Quantum | Qalabka sawir-qaade-kaliya, ilo-rogid-hoos u dhigma | Iskuxidhka aan tooska ahayn ee sarreeya (χ(2)=40 pm/V) iyo heerka tirinta madow ee hooseeya (<100 tirinta/s) waxay kor u qaadaysaa daacadnimada tirada. |
Dareenka Warshadaha | Dareemayaasha cadaadiska heerkulka sare, beddelayaasha hadda jira | Jawaabta piezoelectric ee LiTaO3 wafer (g33>20 mV/m) iyo dulqaadka heerkulka sare (>400°C) waxay ku habboon yihiin bay'ad aad u daran. |
Adeegyada XKH
1.Custom Wafer Fabrication
Cabbirka iyo Goynta: 2–8-inji maraqa oo leh X/Y/Z-cut, 42°Y-goyn, iyo gooyn xagal caado ah (± 0.01° dulqaadka).
Xakamaynta doping: Fe, Mg doping iyada oo loo sii marayo habka Czochralski (qaybta u dhaxaysa 10¹⁶-10¹⁹ cm⁻³) si loo wanaajiyo isku-dheelitirka korantada-optic iyo xasiloonida kulaylka.
2. Tiknoolajiyada Geedi-socodka Horumarineed
;
Periodic Poling (PPLT): Tignoolajiyada Smart-Cut ee waferrada LTOI, gaaritaanka ± 10 nm saxnaanta muddada domainka iyo beddelka soo noqnoqda ee wejiga-ku-habboon (QPM).
Isku-dhafka kala duwan: Si-ku-saleysan LiTaO3 waferrada isku dhafan (POI) oo leh koontarool dhumucdiisuna tahay (300-600 nm) iyo kulaylka kuleylka ilaa 8.78 W/m·K ee shaandhada SAW ee soo noqnoqda.
3. Nidaamyada Maareynta Tayada
;
Tijaabada dhamaadka-ilaa-dhamaadka: Raman spectroscopy (xaqiijinta polytype), XRD (crystallinity), AFM (mofoloji dusha sare), iyo tijaabinta lebiska indhaha (Δn <5×10⁻⁵).
4. Taageerada Silsilada Supply Global
;
Awoodda Wax-soo-saarka: Wax-soo-saarka bishii>5,000 wafer (8-inji: 70%), oo leh 48-saac oo degdeg ah.
Shabakadda Saadka: Daboolista Yurub, Waqooyiga Ameerika, iyo Aasiya-Pacific iyada oo loo marayo xamuulka hawada/badeedka oo leh baakado heerkulku kantaroolo.


