Lithium Tantalate Ingots oo leh Fe/Mg Doping 4inji 6inji 8inji ah oo loogu talagalay Dareemidda Warshadaha

Sharaxaad Gaaban:

Ingots-ka LiTaO3 (Lithium Tantalate Ingots), oo ah agab asaasi ah oo loogu talagalay semiconductors-ka jiilka saddexaad ee ballaaran iyo optoelectronics-ka, waxay ka faa'iidaystaan heerkulka sare ee Curie (607)°C), baaxadda hufnaanta ballaaran (400-5,200 nm), isku-xidhka elektaroonigga ee aadka u fiican (Kt² >15%), iyo luminta dielectric hooseeya (tanδ <2%) si loo kabo isgaarsiinta 5G, xisaabinta quantum, iyo isdhexgalka photonic. Iyada oo loo marayo teknoolojiyada wax soo saarka ee horumarsan sida gaadiidka uumiga jirka (PVT) iyo dhigista uumiga kiimikada (CVD), waxaan bixinaa ingots X/Y/Z-cut, 42°Y-cut, iyo mararka qaarkood poled (PPLT) ee qeexitaannada 3-8-inch, oo muujinaya cufnaanta micropipe <0.1 cm⁻² iyo cufnaanta kala-baxa <500 cm⁻². Adeegyadayadu waxaa ka mid ah doping Fe/Mg, hagaha isbeddelka proton, iyo isdhexgalka kala-duwan ee ku salaysan silicon (POI), wax ka qabashada shaandheeyayaasha indhaha ee waxqabadka sare leh, ilaha iftiinka quantum, iyo dareemayaasha infrared-ka. Maaddadani waxay horseeddaa horumarro ku yimaada yareynta, hawlgalka soo noqnoqda sare, iyo xasilloonida kulaylka, iyadoo dardargelinaysa beddelka gudaha iyo horumarka tignoolajiyada.

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Astaamaha

Xuduudaha farsamada

Faahfaahinta	Caadiga ah	Saxnaan Sare
Agabka	Waferada LiTaO3(LT)/ LiNbO3	Waferada LiTaO3(LT)/LiNbO3
Jihaynta	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Isbarbar socda	30″	10''
Perpendicular	10′	5'
Tayada dusha sare	40/20	20/10
Khalkhalka Mowjadda Hore	λ/4@632nm	λ/8@632nm
Fidsanaanta Dusha sare	λ/4@632nm	λ/8@632nm
Dalool Cad	>90%	>90%
Chamfer	<0.2 × 45°	<0.2 × 45°
Dulqaad Dhumuc/Dhexdhexaad	±0.1 mm	±0.1 mm
Cabbirrada ugu badan	dia150 × 50mm	dia150 × 50mm

Adeegyada XKH

1. Samaynta Ingot Cabbir Weyn;

Cabbirka iyo Goynta: Ingots 3–8-inji ah oo leh X/Y/Z-cut, 42° Y-cut, iyo jaritaanno xagal gaar ah (±0.01° dulqaad).

Xakamaynta Dawooyinka: Fe/Mg oo isku-darka ah iyada oo loo marayo habka Czochralski (kala duwanaanshaha xoogga 10¹⁶–10¹⁹ cm⁻³) si loo wanaajiyo iska caabbinta sawir-qaadista iyo xasilloonida kulaylka.

2. Tiknoolajiyada Habraaca Sare;

Is-dhexgal Kala Duwan: Wafers isku-dhafan oo LiTaO3 ah oo ku salaysan Silicon (POI) oo leh xakamaynta dhumucda (300–600 nm) iyo conductivity kulaylka ilaa 8.78 W/m·K oo loogu talagalay shaandheeyayaasha SAW ee soo noqnoqda sare leh.

Samaynta Hagaha Waveguide: Farsamooyinka isweydaarsiga Proton (PE) iyo is-weydaarsiga proton-ka ee dib u celinta (RPE), iyadoo la gaarayo hagaha wave-ka ee submicron (Δn > 0.7) ee modulators-ka electro-optic-ga xawaaraha sare leh (bandwidth > 40 GHz).

3. Nidaamyada Maareynta Tayada

Tijaabada Dhammaadka-ilaa-Dhamaadka: Raman spectroscopy (xaqiijinta nooca polytype), XRD (crystallinity), AFM (qaab-dhismeedka dusha sare), iyo tijaabada isku-midnimada indhaha (Δn <5×10⁻⁵).

4. Taageerada Silsiladda Sahayda Caalamiga ah

Awoodda Wax-soo-saarka: Wax-soo-saarka bishii wuxuu ka badan yahay 5,000 oo ingots (8-inji: 70%), isagoo taageeraya gaarsiinta degdegga ah ee 48-saacadood ah.

Shabakadda Saadka: Daboolida Yurub, Waqooyiga Ameerika, iyo Aasiya-Baasifigga iyada oo loo marayo xamuulka hawada/badda oo leh baakad heerkulku xakameeyey.

5. Horumarinta Iskaashiga Farsamada

Shaybaarada R&D ee Wadajirka ah: Iskaashi ku samee goobaha isdhexgalka photonic (tusaale ahaan, isku xirka lakabka lumis yar ee SiO2).

Soo Koobid

LiTaO3 Ingots waxay u adeegaan sidii agab istiraatiiji ah oo dib u habaynaya tiknoolajiyada optoelectronics iyo quantum. Iyada oo loo marayo hal-abuurka koritaanka kiristaalka (tusaale ahaan, PVT), yaraynta cilladaha, iyo isdhexgalka kala duwan (tusaale ahaan, POI), waxaanu bixinaa xalal isku hallayn sare leh, kharash-ool ah oo loogu talagalay isgaarsiinta 5G/6G, xisaabinta quantum, iyo IoT-ga warshadaha. Ballanqaadka XKH ee horumarinta yaraynta cilladaha ingot iyo kordhinta wax soo saarka 8-inji wuxuu hubinayaa in macaamiishu ay hoggaamiyaan silsiladaha sahayda adduunka, iyagoo horseedaya xilliga xiga ee nidaamyada deegaanka semiconductor-ka ee ballaaran.