LiTaO3 Lithium Tantalate Ingots oo leh Fe/Mg Doping La Habeeyay 4inch 6inch 8inch oo loogu talagalay Dareenka Warshadaha

Sharaxaad Gaaban:

LiTaO3 Ingots (Lithium Tantalate Ingots), oo ah agabka asaasiga ah ee jiilka saddexaad ee semiconductors-bandgap-ballaaran iyo optoelectronics, waxay ka faa'iidaystaan heerkulkooda Curie sare (607)°C), daah-furnaan ballaadhan (400-5,200 nm), isku xidhka isku xidhka korantada ee ugu wanaagsan (Kt²>15%), iyo luminta tamarta hoose (tanδ <2%) si loo beddelo isgaadhsiinta 5G, xisaabinta tirada, iyo is-dhexgalka sawirka. Anagoo adeegsanayna tignoolajiyada horumarsan sida gaadiidka uumiga jirka (PVT) iyo kaydinta uumiga kiimikaad (CVD), waxaanu ku bixinaa X/Y/Z-cut, 42°Y-cut, iyo PPLT oo xilliyo kala go'an (PPLT) ee 3-8-inch oo tilmaamo ah, oo muujinaya cufnaanta micropipe <0.1 cm⁻² iyo cufnaanta kala-baxa <500 cm. Adeegyadayagu waxa ka mid ah Fe/Mg doping, proton-ga beddelka mawjadaha, iyo is dhexgalka kala duwan ee silikoon ku salaysan (POI), wax ka qabashada shaandhada indhaha ee waxqabadka sare leh, ilaha iftiinka quantum, iyo qalabka wax sheega infrared. Qalabkani waxa uu horseedaa horumarada yaraynta, hawlgalka soo noqnoqda sare, iyo xasiloonida kulaylka, dardargelinta beddelka gudaha iyo horumarinta tignoolajiyada.

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Astaamaha

Xuduudaha farsamada

Tilmaamid	Caadiyan	Saxnaanta Sare
Qalabka	LiTaO3(LT)/ Waferrada LiNbO3	LiTaO3(LT)/LiNbO3 wafers
Hanuuninta	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Barbar socda	30 "	10''
Si toos ah	10′	5'
Tayada dusha sare	40/20	20/10
Wavefront Distortion	λ/4@632nm	λ/8@632nm
Dhulka Dusha sare	λ/4@632nm	λ/8@632nm
Nadiifi Aperture	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Dulqaadashada Dhumucda / Dhexroorka	±0.1 mm	±0.1 mm
Cabbirrada ugu badan	dia150×50mm	dia150×50mm

Adeegyada XKH

1. Wax-soo-saarka Ingot-Baw-weyn;

Cabbirka iyo Goynta: 3–8-inji oo la jarjaray oo leh X/Y/Z-cut, 42°Y-cut, iyo gooyn xagal caado ah (± 0.01° dulqaadka).

Xakamaynta doping: Fe/Mg wada-doping iyada oo loo marayo habka Czochralski (qaybta kala duwan ee 10¹⁶-10¹⁹ cm⁻³) si kor loogu qaado iska caabbinta sawir-qaadista iyo xasilloonida kulaylka.

2. Tiknoolajiyada Geedi socodka Horukacsan;

Isdhexgalka Heterogeneous: Silicon-based LiTaO3 waferrada isku dhafan (POI) oo leh xakamaynta dhumucda (300-600 nm) iyo kulaylka kuleylka ilaa 8.78 W/m · K filtarrada SAW ee soo noqnoqda.

Farsamaynta Waveguide: Farsamooyin beddelka proton (PE) iyo farsamooyinka beddelka proton-ka (RPE), gaaritaanka mawjadaha mawjadaha hoose (Δn> 0.7) ee modulators-xawaaraha sare ee korantada-optic (bandwidth> 40 GHz).

3. Nidaamyada Maareynta Tayada

Tijaabada dhamaadka-ilaa-dhamaadka: Raman spectroscopy (xaqiijinta polytype), XRD (crystallinity), AFM (mofoloji dusha sare), iyo tijaabada lebiska indhaha (Δn <5×10⁻).

4. Taageerada Silsilada Supply Global

Awoodda Wax-soo-saarka: Wax-soo-saarka billaha ah>5,000 ingots (8-inch: 70%), oo taageeraya gaarsiinta degdegga ah ee 48-saac ah.

Shabakadda Saadka: Daboolista Yurub, Waqooyiga Ameerika, iyo Aasiya-Pacific iyada oo la adeegsanayo xamuulka hawada/badeedka oo leh baakado heerkulku kantaroolo.

5. Horumarinta Farsamada

Shaybaarada R&D ee Wadajirka ah: Iska kaashada aaladaha is dhexgalka sawirka (tusaale, SiO2 isku xidhka lakabka-yarida).

Soo koobid

LiTaO3 Ingots waxay u adeegtaa sidii agab istaraatiijiyadeed oo dib u qaabaynaya tignoolajiyada optoelectronics iyo tirada. Iyada oo la adeegsanayo hal-abuurnimada koritaanka crystal (tusaale, PVT), yaraynta cilladaha, iyo is dhexgalka kala duwan (tusaale, POI), waxaan bixinaa isku halleyn sare, xalal kharash-ku-ool ah isgaarsiinta 5G/6G, xisaabinta tirada, iyo warshadaha IoT. Ballanqaadka XKH ee horumarinta dhimista cilladaha iyo cabbirka wax-soo-saarka 8-inch waxay hubisaa in macaamiishu horseed u noqdaan silsiladaha sahayda caalamiga ah, taasoo horseedaysa xilliga soo socda ee nidaamyada deegaanka semiconductor-ka ballaaran.