LiNbO₃ Wafers 2in-8inji Dhumucdiisuna tahay 0.1 ~ 0.5mm TTV 3µm Gaar ah
Xuduudaha farsamada
| Alaab | Wafes LiNbO3 oo ah nooca indhaha | |
| Curie Temp | 1142±2.0℃ | |
| Xagasha Jarida | X/Y/Z iwm. | |
| Dhexroor/cabbir | 2"/3"/4"/6"/8" | |
| Tol(±) | <0.20 mm | |
| Dhumucda | 0.1 ~ 0.5mm ama ka badan | |
| Aqal Hoose | 16mm/22mm/32mm | |
| TV-ga | <3µm | |
| Qaansada | -30 | |
| Duub | <40µm | |
| Jihaynta dabaqa ah | Dhammaantood waa la heli karaa | |
| Nooca Dusha Sare | Dhinac Hal Dhinac ah oo La Safeeyey/Laba Dhinac ah oo La Safeeyey | |
| Dhinaca la safeeyey ee Ra | <0.5nm | |
| S/D | 20/10 | |
| Shuruudaha Cidhifka | R=0.2mm ama sanka oo bull ah | |
| Daawaynta indhaha | Fe/Zn/MgO iwm. oo loogu talagalay waferada heerka indhaha ee LN < | |
| Shuruudaha Dusha Sare ee Wafer | Tusmada Refractive | Maya=2.2878/Ne=2.2033 @632nm hirarka |
| Wasakhowga, | Midna ma jiro | |
| Walxaha ¢>0.3 µ m | <= 30 | |
| Xoq, Jabin | Midna ma jiro | |
| Cilad | Ma jiraan dildilaacyo gees ah, xoqan, calaamado miinshaar, iyo wasakho | |
| Baakad | Sanduuqa Tirada/Wafer-ka | 25 xabbo sanduuq kasta |
Sifooyinka Muhiimka ah ee Wafers-keena LiNbO₃
1. Astaamaha Waxqabadka Sawirka
Wafers-keena LiNbO₃ waxay muujiyaan awoodo is-dhexgal oo aan caadi ahayn oo ku saabsan walxaha iftiinka, iyadoo isku-dhafka indhaha aan tooska ahayn uu gaarayo 42 pm/V - taasoo suurtogalinaysa hababka beddelka hirarka ee hufan ee muhiimka u ah sawir-qaadayaasha quantum. Substrates-ku waxay ilaaliyaan >72% gudbinta guud ahaan 320-5200nm, iyadoo noocyada si gaar ah loo farsameeyay ay gaarayaan luminta faafinta <0.2dB/cm hirarka isgaarsiinta.
2. Injineernimada Hirarka Akustik
Qaab-dhismeedka kristantalka ah ee Wafers-keena LiNbO₃ wuxuu taageeraa xawaaraha hirarka dusha sare ee ka badan 3800 m/s, taasoo u oggolaanaysa shaqada resonator-ka ilaa 12GHz. Farsamooyinkayaga gaarka ah ee nadiifinta waxay soo saaraan aaladaha hirarka dhawaaqa dusha sare (SAW) oo leh khasaaro gelinta ka yar 1.2dB, iyadoo la ilaalinayo xasilloonida heerkulka gudaha ±15ppm/°C.
3. Adkeysiga Deegaanka
Iyadoo loo sameeyay si ay u adkeysato xaalado aad u daran, LiNbO₃ Wafers-keena waxay ilaaliyaan shaqeynta heerkulka caadiga ah ilaa jawiga hawlgalka 500°C. Maaddadu waxay muujineysaa adkaanta shucaaca ee aan caadiga ahayn, iyadoo u adkeysaneysa >1Mrad wadarta qiyaasta ionizing iyada oo aan lahayn wax-qabad xumo weyn.
4. Qaabeynta Gaarka ah ee Codsiga
Waxaan bixinaa noocyo kala duwan oo lagu farsameeyay domain-ka oo ay ku jiraan:
Qaab-dhismeedyo xilliyeed leh oo leh muddooyin domain 5-50μm ah
Filimada khafiifka ah ee Ion-ka ah ee loogu talagalay is-dhexgalka isku-dhafka ah
Noocyada lagu xoojiyay Metamaterial-ka ee codsiyada gaarka ah
Xaaladaha Hirgelinta ee LiNbO₃ Wafers
1. Shabakadaha Aragtida ee Jiilka Xiga
Wafers-ka LiNbO₃ waxay u adeegaan sidii laf-dhabarta gudbiyaasha indhaha ee terabit-ka, taasoo awood u siinaysa gudbinta isku-dhafan ee 800Gbps iyada oo loo marayo naqshadaha modulator-ka ee horumarsan. Substrates-keena waxaa si isa soo taraysa loogu isticmaalaa hirgelinta optics-ka ee la isku duubay ee nidaamyada dardargelinta AI/ML.
2.6G RF Frontends
Jiilkii ugu dambeeyay ee Wafers-ka LiNbO₃ wuxuu taageeraa shaandhaynta band-ka aadka u ballaaran ilaa 20GHz, isagoo wax ka qabanaya baahiyaha heerarka 6G ee soo ifbaxaya. Alaabteenu waxay suurtogal ka dhigaysaa qaab-dhismeedka dhawaaqa dhawaaqa cusub iyadoo arrimaha Q ay ka sarreeyaan 2000.
3. Nidaamyada Macluumaadka Tirada
Wafers-ka LiNbO₃ ee saxda ah ayaa sameeya aasaaska ilaha photon ee isku dhegan iyadoo hufnaan jiileed oo ka badan 90% ah. Substrates-keennu waxay awood u siinayaan horumarro ku yimaada xisaabinta photonic quantum iyo shabakadaha isgaarsiinta ee amniga ah.
4. Xalalka Dareenka Sare
Laga bilaabo LiDAR baabuurta oo ka shaqeeya 1550nm ilaa dareemayaasha gravimetric-ga ee aadka u xasaasiga ah, LiNbO₃ Wafers waxay bixiyaan madal wareejinta muhiimka ah. Alaabteenu waxay awood u siinayaan xallinta dareemayaasha ilaa heerarka ogaanshaha hal-molecule.
Faa'iidooyinka Muhiimka ah ee LiNbO₃Wafers
1. Waxqabadka Elektro-Optic-ga ee aan la barbar dhigi karin
Isu-dheellitirka Elektro-Optic-ga ee aadka u Sareeya (r₃₃~ 30-32 pm/V): Waxay matashaa halbeegga warshadaha ee wafers-ka lithium niobate-ka ganacsiga, taasoo awood u siinaysa 200Gbps+ modulators-ka indhaha ee xawaaraha sare leh oo aad uga sarreeya xadka waxqabadka ee xalalka ku salaysan silicon ama polymer.
Lumis Gelin Aad u Hooseysa (<0.1 dB/cm): Waxaa lagu gaaray iyadoo la isticmaalayo nanoscale polishing (Ra<0.3 nm) iyo dahaarka ka hortagga milicsiga (AR), taasoo si weyn u xoojinaysa hufnaanta tamarta ee qaybaha isgaarsiinta indhaha.
2. Sifooyinka Sare ee Piezoelectric & Acoustic
Ku Habboon Qalabka SAW/BAW ee Soo Noqnoqda Sare: Iyada oo leh xawaare cod oo ah 3500-3800 m/s, wafer-yadani waxay taageeraan naqshadaha shaandhada 6G mmWave (24-100 GHz) oo leh khasaarooyin gelinta <1.0 dB.
Isku-xidhka Sare ee Elektromekaanikada (K²~0.25%): Waxay kor u qaadaysaa xawaaraha iyo xulashada calaamadaha ee qaybaha hore ee RF, taasoo ka dhigaysa kuwo ku habboon saldhigyada saldhigga 5G/6G iyo isgaarsiinta dayax-gacmeedka.
3. Hufnaanta Ballaca Weyn & Saamaynta Aragga Aan Toosnayn
Daaqadda Gudbinta Indhaha ee Aad u Ballaaran (350-5000 nm): Waxay daboolaysaa UV-ga ilaa bartamaha IR-ga, taasoo awood u siinaysa codsiyada sida:
Quantum Optics: Qaabeynta xilli-xilliyeedka (PPLN) waxay gaaraan wax-ku-oolnimo ka badan 90% soosaarka lamaanaha photon ee isku dheggan.
Nidaamyada Laser-ka: Oscillation-ka parametric-ka ee indhaha (OPO) wuxuu bixiyaa wax soo saar mowjad la hagaajin karo (1-10 μm).
Xadka Dhaawaca Laser-ka ee Gaarka ah (>1 GW/cm²): Wuxuu buuxiyaa shuruudaha adag ee codsiyada laser-ka awoodda sare leh.
4. Xasillooni Deegaan oo aad u Xun
Iska caabinta Heerkulka Sare (Curie point: 1140°C): Waxay ilaalisaa waxqabadka xasilloon ee u dhexeeya -200°C ilaa +500°C, oo ku habboon:
Elektarooniga Gawaarida (dareemayaasha qaybta matoorka)
Dayax-gacmeedka (qaybaha indhaha ee hawada sare ee qotoda dheer)
Adkaanta Shucaaca (>1 Mrad TID): Waafaqsan heerarka MIL-STD-883, oo ku habboon elektaroonigga nukliyeerka iyo difaaca.
5. Habaynta iyo Is-dhexgalka Dabacsanaanta
Hagaajinta Jihaynta Crystal iyo Habaynta Doping-ka:
Waferada X/Y/Z-cut (±0.3° sax ah)
Daawada MgO (5 mol%) si loo kordhiyo iska caabbinta waxyeelada indhaha
Taageerada Isdhexgalka Kala Duwan:
La jaan qaadaya LiNbO₃-on-Insulator (LNOI) oo ah filim khafiif ah si loogu daro isku-dhafka silicon photonics (SiPh)
Waxay awood u siineysaa isku-xidhka heerka wafer-ka ee muraayadaha indhaha ee la isku duubay (CPO)
6. Wax soo saar la miisaami karo iyo hufnaanta kharashka
Wax soo saarka Wafer Mass ee 6-inji (150mm): Waxay hoos u dhigtaa kharashka cutubka 30% marka la barbar dhigo hababka dhaqameed ee 4-inji ah.
Gaarsiinta Degdegga ah: Badeecadaha caadiga ah waxay soo maraan 3 toddobaad gudahood; noocyada yaryar ee noocyada (ugu yaraan 5 wafer) waxay keenaan 10 maalmood gudahood.
Adeegyada XKH
1. Shaybaarka Hal-abuurka Agabka
Khubaradayada kobaca kiristaalka ah waxay la shaqeeyaan macaamiisha si ay u horumariyaan qaacidooyinka LiNbO₃ Wafers-ka ee gaarka u ah codsiyada, oo ay ku jiraan:
Kala duwanaansho lumis indho-indheyn oo hooseeya (<0.05dB/cm)
Qaabeynta maaraynta awoodda sare
Halabuurka u dulqaadan kara shucaaca
2. Tuubada Soo-saaridda Degdegga ah
Laga bilaabo naqshadeynta ilaa keenista 10 maalmood oo shaqo gudahood:
Wafer-ka jihada gaarka ah
Elektroodhada qaabaysan
Shaybaarro hore loo sii qeexay
3. Shahaadada Waxqabadka
Shixnad kasta oo LiNbO₃ Wafer ah waxay ka kooban tahay:
Astaamaha muuqaalka oo dhammaystiran
Xaqiijinta jihada kirismaska
Shahaadada tayada dusha sare
4. Hubinta Silsiladda Sahayda
Khadadka wax soo saarka ee loogu talagalay codsiyada muhiimka ah
Kaydka kaydka ee dalabaadka degdegga ah
Shabakadda saadka ee u hoggaansan ITAR









