LiNbO₃ Wafers 2inch-8inch Dhumucdiisuna waxay tahay 0.1 ~ 0.5mm TTV 3µm Custom

LiNbO₃ Wafers 2inch-8inch Dhumucdiisuna waxay tahay 0.1 ~ 0.5mm TTV 3µm Sawirka Gaarka ah

Sharaxaad Gaaban:

LiNbO₃ Wafers-ku waxay u taagan yihiin heerka dahabka ee sawir-qaadista isku-dhafka ah iyo acoustics-ka saxda ah, iyagoo soo bandhigaya waxqabad aan la mid ahayn hababka casriga ah ee indhaha-electronic. Sida soo saaraha hormuudka ah, waxaanu hagaajinay farshaxanka soo saarista substrate-ka la cusboonaysiiyay anagoo adeegsanayna farsamooyinka isku dheelitirka gaadiidka uumiga, anagoo gaarnayna kaamilnimada crystalline-ka hogaaminaysa oo leh cufnaanta cilladaysan ee ka hooseeya 50/cm².

Awoodaha wax-soo-saarka XKH waxay u dhexeeyaan dhexroorka 75mm ilaa 150mm, oo leh kontorool toosan oo hanuunin ah (X/Y/Z-cut ± 0.3°) iyo xulashooyinka doping-ka gaarka ah oo ay ku jiraan walxaha dhifka ah ee dhulka. Isku darka gaarka ah ee guryaha ee LiNbO₃ Wafers - oo ay ku jiraan isugeyntooda cajiibka ah ee r₃₃ (32 ± 2 pm / V) iyo daahfurnaan ballaaran oo u dhow UV ilaa bartamaha IR - waxay ka dhigtaa lama huraan u ah wareegyada soo socda ee sawir-qaadista iyo aaladaha dhawaaqa-sare ee soo noqnoqda.

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Astaamaha

Xuduudaha farsamada

Qalab	Fasalka indhaha ee LiNbO3 wafes
Curie Heer	1142 ± 2.0 ℃
Xagalka Goynta	X/Y/Z iwm
Dhexroorka/xajmiga	2"/3"/4"/6"/8"
Tol (±)	<0.20 mm
Dhumucda	0.1 ~ 0.5mm ama ka badan
Guriga Hoose	16mm/22mm/32mm
TTV	<3µm
Qaansada	-30
Warp	<40µm
Hanuuninta Flat	Dhammaan la heli karo
Nooca Dusha sare	Dhinac Keli ah oo La Sifeeyay /Laba Dhinac oo La Sifeeyay
Dhanka Ra	<0.5nm
S/D	20/10
Shuruudaha Cirifka	R=0.2mm ama Bullnose
Daawooyinka indhaha lagu sameeyo	Fe/Zn/MgO iwm ee darajada indhaha LN< wafers
Shuruudaha Dusha Wafer	Tilmaanta refractive	No=2.2878/Ne=2.2033 @632nm dhererka mawjada
	faddarayn,	Midna
	Qaybaha ￠>0.3 µ m	<= 30
	xoqin, xoqid	Midna
	Cilad	Ma jiraan dildilaacyo gees ah, xoqid, calaamado miinshaar, wasakh
Baakadaha	Qty/sanduuqa wafer	25pcs halkii sanduuq

Tilmaamaha Muhiimka ah ee Wafersyada LiNboO₃

1. Tilmaamaha Waxqabadka Sawirka

Wafers-yadayada LiNbO₃ waxay soo bandhigaan awoodaha is dhexgalka arrimaha iftiinka ee aan caadiga ahayn, oo leh iskuxirayaasha indhaha ee aan tooska ahayn oo gaaraya 42 pm/V - taasoo awood u siinaysa habka beddelka mawjada dhererka hufan ee muhiimka u ah sawir-qaadista quantum. Substrates-yadu waxay ilaalinayaan> 72% gudbinta guud ahaan 320-5200nm, oo leh noocyo si gaar ah loo farsameeyay oo gaadhaya <0.2dB/cm luminta faafinta hirarka isgaadhsiinta.

2.Acoustic Wave Engineering

Qaab dhismeedka crystalline ee Wafers-keena LiNbO₃ waxay taageertaa xawaaraha mowjadaha dusha sare ee ka badan 3800 m/s, taasoo u oggolaanaysa hawlgalka resonator ilaa 12GHz. Farsamooyinkeena nadiifinta lahaanshaha waxay soo saartaa aaladaha hirarka dhawaaqa sare (SAW) ee leh khasaaraha gelinta ee ka hooseeya 1.2dB, iyadoo la ilaalinayo xasilloonida heerkulka gudaha ± 15ppm/°C.

3.Resilience Environmental

Injineerin u leh inay u adkeyso xaaladaha ba'an, LiNbO₃ Wafersyadayada waxay ilaalinayaan shaqeynta heerkulka cryogenic ilaa 500°C jawiga shaqada. Maaddadu waxay muujinaysaa adkaanta shucaaca gaarka ah, u adkaysata> 1Mrad wadarta qiyaasta ionizing iyada oo aan hoos u dhicin waxqabadka muhiimka ah.

4.Application-Qaabka Habaynta

Waxaan bixinaa kala duwanaanshiyaha domain-engineered oo ay ku jiraan:
Dhismooyin si isdaba joog ah u xidhan oo leh muddo 5-50μm
Filimada khafiifka ah ee ion-la jarjaray ee is dhexgalka isku-dhafka ah
Noocyada Metamaterial-la xoojiyay ee codsiyada gaarka ah

Dhacdooyinka Hirgelinta ee LiNbO₃ Wafers

1.Next-Gen Optical Networks
LiNbO₃ Wafers-ku waxay u adeegaan sidii laf-dhabarta cabbiraadaha indhaha ee cabbirka terabit, taasoo awood u siinaysa 800Gbps gudbinta isku xidhan iyadoo loo marayo naqshadaha modulator-ka ee horumarsan. Substrate-yadayada ayaa si sii kordheysa loogu aqbaley hirgelinta isku-xirnaanta indho-indheynta ee nidaamyada dardar-gelinta AI/ML.
2.6G RF Frontends
Jiilkii ugu dambeeyay ee LiNbO₃ Wafers wuxuu taageeraa shaandhaynta aadka u ballaaran ilaa 20GHz, isagoo wax ka qabanaya baahiyaha kala duwan ee heerarka 6G ee soo baxaya. Agabkayagu waxa uu sahlayaa nashqada resonator-ka cusub ee leh Q factor oo dhaaftay 2000.
3.Quantum Information Systems
LiNbO₃ Wafers-ku-salaysan oo sax ah ayaa aasaas u ah ilaha sawir-qaadista ee isku xidhan ee leh> 90% hufnaanta jiilka lammaane. Substrate-yadayadu waxay awood u siinayaan horumarka xagga xisaabinta quantum-ka ee photonic iyo shabakado isgaarsiineed oo sugan.
4.Xalka Dareenka Sare
Laga soo bilaabo baabuurta LiDAR ee ku shaqeeya 1550nm ilaa dareemayaasha cuf-jiidka-xasaasiga ah ee aadka u xasaasiga ah, LiNbO₃ Wafers ayaa bixiya habka gudbinta muhiimka ah. Qalabkayagu waxa uu awood u yeelo xalinta dareemayaasha ilaa heerarka ogaanshaha hal-molecule.

Faa'iidooyinka muhiimka ah ee LiNbO₃Wafers

1. Waxqabadka Electro-Optic Aan Lamid Ahayn
Kordhinta Electro-Optic-ga ah ee Gaarka ah (r₃₃ ~ 30-32 pm / V): Waxay ka dhigan tahay halbeegga warshadaha ee wafers lithium niobate ganacsi, taasoo awood u siinaysa 200Gbps + modulators indhaha xawaaraha sare leh oo aad uga sarreeya xadka waxqabadka ee silikoon ku saleysan ama xalalka polymer.

Khasaaraha Gelida aadka u hooseeya (<0.1 dB/cm): Waxaa lagu gaaraa polishing nanoscale (Ra<0.3 nm) iyo ka-hortagga milicsiga (AR), taasoo si weyn kor ugu qaadaysa waxtarka tamarta ee qaybaha isgaarsiinta indhaha.

2. Sarreysa Piezoelectric & Acoustic Properties
Ku habboon Aaladaha SAW/BAW-soo noqnoqda: Xawaaraha dhawaaqa ee 3500-3800 m/s, wafers-yadani waxay taageeraan naqshadaha shaandhada 6G mmWave (24-100 GHz) oo muujinaya khasaaraha gelinta <1.0 dB.

Isku-xidhka Isku-xidhka Electromechanical High (K² ~ 0.25%): Waxay xoojisaa xajmiga iyo xulashada calaamada qaybaha hore ee RF, taasoo ka dhigaysa inay ku habboon yihiin saldhigyada 5G/6G iyo isgaarsiinta dayax-gacmeedka.

3. Daah-furnaanta Broadband & Saamaynta Aragga Aan Tooska Ahayn
Daaqadda gudbinta indhaha ee aadka u ballaadhan (350-5000 nm): Waxay dabooshaa UV ilaa dhexda-IR spectra, awood u siinaya codsiyada sida:

Quantum Optics: Isku xidhka joogtada ah (PPLN) waxay gaadhaan> 90% waxtarka jiilka lamaanaha sawir-qaadaha ee isku xidhan.

Nidaamyada Laser-ka: Oscillation Oscillation Optical Parametric (OPO) wuxuu keenaa wax soo saarka hirarka dhererka la hagaajin karo (1-10 μm).

Heerka Burburka Laser-ka Gaarka ah (> 1 GW/cm²): Buuxiyay shuruudaha adag ee codsiyada laysarka awoodda sare leh.

4. Xasilooni deegaan oo aad u daran
Iska caabbinta Heerkulka Sare (Curie point: 1140°C): Wuxuu ilaaliyaa waxqabadka deggan guud ahaan -200°C ilaa +500°C, ku habboon:

Gawaadhida Elektrooniga ah (Dareemaha qaybta matoorka)

Dayax gacmeedka (qaybaha indhaha ee qoto dheer)

Hardness Shucaaca (> 1 Mudane TID): Waafaqsan heerarka MIL-STD-883, oo ku habboon qalabka elektiroonigga ah ee nukliyeerka iyo difaaca.

5. Isbeddelka & Is-dhexgalka Is-dhexgalka
Hanuuninta Crystal & Hagaajinta Doping:

X/Y/Z-lagu gooyay maraqa (± 0.3° sax ah)

MgO doping (5 mol%) ee caabbinta waxyeelada indhaha ee la xoojiyey

Taageerada Is-dhexgalka kala duwan:

La jaan qaadaya filimka khafiifka ah ee LiNbO₃-on-Insulator (LNOI) ee is dhexgalka isku-dhafka ah ee sawir-qaadista (SiPh)

Waxay u saamaxdaa isku xidhka heerka wafer-ka ee muraayadaha la- baakadsan (CPO)

6. Wax-soo-saarka la qiyaasi karo & Hufnaanta Qiimaha
6-inji (150mm) Wax-soo-saarka Wafer Mass: Waxay hoos u dhigtaa kharashaadka cutubka 30% marka loo eego hababka 4-inch ee soo jireenka ah.

Bixinta Degdegga ah: Alaabooyinka caadiga ah waxay ku soo raraan 3 toddobaad; noocyada yar yar (ugu yaraan 5 wafer) waxay ku keenaan 10 maalmood gudahood.

Adeegyada XKH

1. Shaybaarka Hal-abuurka Qalabka
Khubaradayada koritaanka crystal waxay la shaqeeyaan macaamiisha si ay u horumariyaan codsiyada gaarka ah ee LiNbO₃ Wafers, oo ay ku jiraan:

Kala duwanaanshaha luminta indhaha ee hooseeya (<0.05dB/cm)

Habaynta maaraynta awooda sare

Halabuurka u adkaysta shucaaca

2. Dhuumaha wax-soo-saarka degdega ah
Laga soo bilaabo naqshadeynta ilaa gaarsiinta 10 maalmood oo shaqo gudahood:

Waferrada hanuuninta gaarka ah

Electrodes qaabaysan

Muunado hore loo sifeeyey

3. Shahaadada waxqabadka
Shixnad kasta oo LiNbo₃ Wafer ah waxaa ka mid ah:

Tilmaamidda muuqaal muuqaal buuxa

Xaqiijinta hanuuninta Crystallographic

Shahaadada tayada dusha sare

4. Hubinta Silsiladda Supply