Indium Antimonide (InSb) wafers N nooca P nooca Epi oo diyaar ah Te doped ama Ge doped 2inch 3inch 4inch dhumucda Indium Antimonide (InSb) wafers
Astaamaha
Ikhtiyaarada Doping:
1.Lama kala guurin:Wafersyadani waxay ka xor yihiin wax kasta oo doping ah, taas oo ka dhigaysa mid ku habboon codsiyada gaarka ah sida koritaanka epitaxial.
2.Te Doped (N-Nooca):Tellurium (Te) doping waxaa caadi ahaan loo isticmaalaa in lagu abuuro waferrada nooca N-ka ah, kuwaas oo ku habboon codsiyada ay ka mid yihiin qalabka wax baara infrared iyo elektiroonigga xawaaraha sare leh.
3.Ge Doped (P-Nooca):Germanium (Ge) doping waxaa loo isticmaalaa in lagu abuuro wafers nooca P, oo bixiya dhaqdhaqaaqa dalool sare codsiyada semiconductor sare.
Xulashada cabbirka:
1. Waxaa lagu heli karaa dhexroorka 2-inch, 3-inch, iyo 4-inch. Wafers-yadani waxay daboolaan baahiyo tignoolajiyadeed oo kala duwan, laga bilaabo cilmi-baarista iyo horumarinta ilaa wax soo saarka ballaaran.
Dulqaadyada dhexroorka saxda ah ee 2.Crecise waxay hubinayaan isku dheelitirnaanta qaybaha, oo leh dhexroor 50.8 ± 0.3mm (oo loogu talagalay 2-inch wafers) iyo 76.2 ± 0.3mm (oo loogu talagalay 3-inch wafers).
Xakamaynta dhumucda:
1.Wafers-ku waxay diyaar u yihiin dhumucdiisuna tahay 500 ± 5μm waxqabadka ugu fiican ee codsiyada kala duwan.
2.Cabbirada dheeraadka ah sida TTV (Isugeynta Dhumucda Dufanka), BOW, iyo Warp ayaa si taxadar leh loo xakameynayaa si loo hubiyo tayada sare iyo tayada.
Tayada dusha sare:
1. Wafers-yadu waxay la yimaadaan dusha sare ee dhalaalaya / dhejis ah si loo hagaajiyo waxqabadka indhaha iyo korantada.
2.Dugsyadani waxay ku habboon yihiin korriinka epitaxial, oo bixiya saldhig siman oo dheeraad ah oo ku saabsan qalabka waxqabadka sare leh.
Epi-Diyaar:
1. Waferrada InSb waa epi-diyaar, taasoo la micno ah in horay loo daaweeyay hababka kaydinta epitaxial. Tani waxay ka dhigaysaa inay ku habboon yihiin codsiyada wax soo saarka semiconductor halkaasoo lakabyada epitaxial ay u baahan yihiin in lagu koriyo korka waferka.
Codsiyada
1. Baaraha Infrared:Waferrada InSb waxaa caadi ahaan loo adeegsadaa ogaanshaha infrared (IR), gaar ahaan inta u dhaxaysa mawjadaha dhererka dhexe (MWIR). Wafers-yadani waxay lama huraan u yihiin aragga habeenkii, sawirka kulaylka, iyo codsiyada spectroscopy infrared.
2.Xawaare Sare oo Elektroonik ah:Dhaqdhaqaaqooda elektaroonigga ah ee sarreeya awgeed, waferrada InSb waxaa loo isticmaalaa aaladaha elektiroonigga ah ee xawaaraha sare leh sida transistor-ka-soo noqnoqda sare, aaladaha ceelka quantum-ka, iyo transistor-ka dhaqdhaqaaqa sare ee elektiroonigga ah (HEMTs).
3. Qalabka Ceelka Quantum:Xadhkaha cidhiidhiga ah iyo dhaqdhaqaaqa elektarooniga ah ee aadka u fiican ayaa ka dhigaya waferrada InSb ee ku habboon in loo isticmaalo aaladaha ceelka quantum. Qalabkani waa qaybaha muhiimka ah ee laysarka, qalabka wax baadha, iyo hababka kale ee indhaha.
4.Aaladaha Spintronic:InSb sidoo kale waxaa lagu sahamiyaa codsiyada spintronic, halkaas oo wareegga elektarooniga loo isticmaalo habaynta macluumaadka. Isku-xidhka wareega wareega hoose ee walaxda ayaa ka dhigaysa mid ku habboon aaladahan waxqabadka sare leh.
5.Terahertz (THz) Codsiyada shucaaca:Aaladaha ku saleysan InSb waxaa loo adeegsadaa codsiyada shucaaca THH, oo ay ku jiraan cilmi-baaris saynis, sawir-qaadis, iyo sifada walxaha. Waxay awoodaan tignoolajiyada horumarsan sida THz spectroscopy iyo nidaamyada sawirka THz.
6.Aaladaha kuleyliyaha:Guryaha gaarka ah ee InSb waxay ka dhigaan wax soo jiidasho leh oo loogu talagalay codsiyada korantada, halkaas oo loo isticmaali karo in loogu beddelo kulaylka koronto si wax ku ool ah, gaar ahaan codsiyada niche sida tignoolajiyada booska ama abuurista koronto ee deegaan aad u daran.
Qiyaasta Alaabta
| Halbeegga | 2-inch | 3-inch | 4-inch |
| Dhexroorka | 50.8± 0.3mm | 76.2 ± 0.3mm | - |
| Dhumucda | 500± 5μm | 650± 5μm | - |
| Dusha sare | La sifeeyay/la ekaaday | La sifeeyay/la ekaaday | La sifeeyay/la ekaaday |
| Nooca Doping | Aan la kordhin, Te-doped (N), Ge-doped (P) | Aan la kordhin, Te-doped (N), Ge-doped (P) | Aan la kordhin, Te-doped (N), Ge-doped (P) |
| Hanuuninta | (100) | (100) | (100) |
| Xidhmada | Keli | Keli | Keli |
| Epi-Diyaar | Haa | Haa | Haa |
Qiyaasta Korontada ee Te Doped (N-Nooca):
- Dhaqdhaqaaqa: 2000-5000 cm²/V·s
- iska caabin: (1-1000) Ω·cm
- EPD (cufnaanta cilladaysan): ≤2000 cilladood/cm²
Qiyaasta Korontada ee Ge Doped (P-Nooca):
- Dhaqdhaqaaqa: 4000-8000 cm²/V·s
- iska caabin: (0.5-5) Ω·cm
- EPD (cufnaanta cilladaysan): ≤2000 cilladood/cm²
Gabagabo
Waferrada Indium Antimonide (InSb) waa shay lagama maarmaan u ah tiro balaadhan oo ah codsiyada waxqabadka sare ee dhinacyada elektiroonigga ah, optoelectronics, iyo tignoolajiyada infrared. Dhaqdhaqaaqooda elektarooniga ah ee ugu fiican, isku-xirnaanta wareega wareega hoose, iyo xulashooyinka doping ee kala duwan (Te for N-type, Ge for P-nooca), Waferrada InSb waxay ku habboon yihiin isticmaalka aaladaha sida qalabka infrared, transistors-xawaaraha sare, aaladaha ceelka quantum, iyo aaladaha spintronic.
Wafers-yada waxaa lagu heli karaa cabbirro kala duwan (2-inch, 3-inch, iyo 4-inch), oo leh kontorool dhumucdiisuna tahay saxda ah iyo sagxadaha Epi-diyaarsan, iyagoo hubinaya inay buuxiyaan shuruudaha adag ee soo-saarka semiconductor-ka casriga ah. Wafers-yadani waxay ku fiican yihiin codsiyada goobaha sida IR ogaanshaha, elektiroonigga xawaaraha sare leh, iyo shucaaca THz, taas oo u oggolaanaysa tignoolajiyada horumarsan ee cilmi-baarista, warshadaha, iyo difaaca.
Jaantus faahfaahsan
