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12 inji Sapphire Wafer C-Plane SSP/DSP

Sawirka 12 inji ah ee Sapphire Wafer C-Plane SSP/DSP
  • 12 inji Sapphire Wafer C-Plane SSP/DSP
  • 12 inji Sapphire Wafer C-Plane SSP/DSP

Sharaxaad Gaaban:

Shay Faahfaahinta
Dhexroorka 2 inji 4 inji 6 inji 8 inji 12 inji
Alaab Safayr macmal ah (Al2O3 ≥ 99.99%)
Dhumucda 430±15μm 650±15μm 1300±20μm 1300±20μm 3000±20μm
Dusha sare
jihaynta		 c-diyaar (0001)
OF dhererka 16±1mm 30±1mm 47.5±2.5mm 47.5±2.5mm *la gorgortami karo
OF Jihaynta diyaarad a 0±0.3°
TV-ga * ≦10μm ≦10μm ≦15μm ≦15μm *la gorgortami karo
QUSUUS * -10 ~ 0μm -15 ~ 0μm -20 ~ 0μm -25 ~ 0μm *la gorgortami karo
Duub * ≦15μm ≦20μm ≦25μm ≦30μm *la gorgortami karo
Dhinaca hore
dhammaystirka		 Epi-ready (Ra＜0.3nm)
Dhinaca dambe
dhammaystirka		 Wareegidda (Ra 0.6 – 1.2μm)
Baakad Baakadaha faakuumka ee qolka nadiifka ah
Darajada ugu sareysa Nadiifin tayo sare leh: cabbirka walxaha ≧ 0.3um), ≦ 0.18 xabbo/cm2, wasakhaynta birta ≦ 2E10/cm2
Faallooyin Tilmaamaha la habeyn karo: jihada a/r/ m-diyaaradda, xagal aan lahayn, qaab, dhalaalinta dhinaca labanlaabka ah

Astaamaha

Jaantus Faahfaahsan

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Hordhac Safayr ah

Wafer Sapphire ah waa walxo hal-kristaal ah oo laga sameeyay aluminium oxide macmal ah oo saafi ah (Al₂O₃). Kirismooyinka waaweyn ee sapphire waxaa lagu beeraa iyadoo la adeegsanayo habab horumarsan sida Kyropoulos (KY) ama Habka Isweydaarsiga Kulaylka (HEM), ka dibna waxaa lagu farsameeyaa jarista, jihaynta, shiididda, iyo nadiifinta saxda ah. Sababtoo ah sifooyinka gaarka ah ee jireed, indhaha, iyo kiimikada, wafer sapphire ah wuxuu ka ciyaaraa door aan la beddeli karin dhinacyada semiconductors, optoelectronics, iyo elektaroonigga macaamiisha ee heerka sare ah.

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Hababka Isku-darka Sapphire-ka ee Caadiga ah

Habka Mabda'a Faa'iidooyinka Codsiyada ugu Muhiimsan
Habka Verneuil(Isku-darka Ololka) Budada Al₂O₃ oo saafi ah ayaa lagu dhalaaliyaa olol oksijiin ah, dhibcaha ayaa lakabka ku adkeeya iniin kasta. Qiimo jaban, hufnaan sare, iyo hab fudud oo sahlan Safayr tayo sare leh, agab hore oo indhaha ah
Habka Czochralski (CZ) Al₂O₃ waxaa lagu dhalaaliyaa weel lagu shubo, kiristaal iniin ahna si tartiib tartiib ah ayaa kor loogu soo jiidayaa si kiristaalku u koro. Waxay soo saartaa kiristaalo waaweyn oo leh daacadnimo wanaagsan Kiristaalo laysar ah, daaqado indhaha ah
Habka Kyropoulos (KY) Qaboojinta gaabiska ah ee la xakameeyey waxay u oggolaanaysaa kiristaalku inuu si tartiib tartiib ah ugu koro gudaha godka. Awood u leh inuu koro kiristaalo cabbir weyn leh, oo cadaadis yar leh (tobanaan kiilogaraam ama ka badan) Substrates-ka LED-ka, shaashadaha taleefanka casriga ah, qaybaha indhaha
Habka HEM(Isweydaarsiga Kulaylka) Qaboojinta waxay ka bilaabataa dusha sare ee dabka lagu shido, kiristaalo ayaa hoos uga soo baxa iniinaha Waxay soo saartaa kiristaallo aad u weyn (ilaa boqolaal kiilogaraam) oo leh tayo isku mid ah Daaqadaha indhaha ee waaweyn, hawada sare, muraayadaha militariga
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Jihaynta Crystal

Jihada / Diyaaradda Tusmada Miller Astaamaha Codsiyada ugu Muhiimsan
Diyaaradda C-diyaarad (0001) Atamyada ku toosan dhidibka c, dusha sare ee cidhifka, atamyada si siman ayaa loo habeeyey LED, diode-yada laysarka, substrates-ka gaN epitaxial (kuwa ugu badan ee la isticmaalo)
Diyaarad A-diyaarad (11-20) Isbarbar dhigga dhidibka c, oo ah dusha sare ee aan cirka ahayn, waxay ka hortagtaa saameynta kala-goynta Aaladaha aan polar ahayn ee GaN epitaxy, aaladaha optoelectronic-ka ah
Diyaaradda M-diyaarad (10-10) Isbarbar dhigga dhidibka c, oo aan ahayn mid cirka ka soo horjeeda, iyo isku dheelitir sare Aaladaha GaN epitaxy ee waxqabadka sare leh, aaladaha optoelectronic-ka ah
Diyaaradda R-diyaarad (1-102) Iyada oo u janjeerta dhinaca c-axis, sifooyin muuqaal oo aad u fiican Daaqadaha indhaha, qalabka ogaanshaha infrared-ka, qaybaha laysarka

 

jihada kiristaalka

Faahfaahinta Wafer Sapphire (La habeyn karo)

Shay 1-inji C-plane(0001) 430μm Wafer Sapphire ah
Qalabka Crystal 99,999%, Nadiifin Sare, Monocrystalline Al2O3
Fasal Prime, Epi-Ready
Jihaynta Dusha Sare Diyaaradda C(0001)
C-dibedda xagasha ka baxsan dhanka dhidibka M 0.2 +/- 0.1°
Dhexroorka 25.4 mm +/- 0.1 mm
Dhumucda 430 μm +/- 25 μm
Dhinac Hal La Safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Dusha Dambe Dhul fiican, Ra = 0.8 μm ilaa 1.2 μm
Dhinac Laba-geesood ah oo la safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Dusha Dambe Epi-polished, Ra < 0.2 nm (by AFM)
TV-ga < 5 μm
QAANSO < 5 μm
WARP < 5 μm
Nadiifin / Baakad Nadiifinta qolka nadiifka ah ee fasalka 100 iyo baakadaha faakuumka,
25 xabbo oo ku jira hal baakad oo cajalad ah ama baakad hal gabal ah.

 

Shay 2-inji C-plane(0001) 430μm Wafer Sapphire ah
Qalabka Crystal 99,999%, Nadiifin Sare, Monocrystalline Al2O3
Fasal Prime, Epi-Ready
Jihaynta Dusha Sare Diyaaradda C(0001)
C-dibedda xagasha ka baxsan dhanka dhidibka M 0.2 +/- 0.1°
Dhexroorka 50.8 mm +/- 0.1 mm
Dhumucda 430 μm +/- 25 μm
Jihada Fidsan ee Aasaasiga ah Diyaarad A (11-20) +/- 0.2°
Dhererka Fidsan ee Aasaasiga ah 16.0 mm +/- 1.0 mm
Dhinac Hal La Safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Dusha Dambe Dhul fiican, Ra = 0.8 μm ilaa 1.2 μm
Dhinac Laba-geesood ah oo la safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Dusha Dambe Epi-polished, Ra < 0.2 nm (by AFM)
TV-ga < 10 μm
QAANSO < 10 μm
WARP < 10 μm
Nadiifin / Baakad Nadiifinta qolka nadiifka ah ee fasalka 100 iyo baakadaha faakuumka,
25 xabbo oo ku jira hal baakad oo cajalad ah ama baakad hal gabal ah.
Shay 3-inji C-plane(0001) 500μm Sapphire Wafers
Qalabka Crystal 99,999%, Nadiifin Sare, Monocrystalline Al2O3
Fasal Prime, Epi-Ready
Jihaynta Dusha Sare Diyaaradda C(0001)
C-dibedda xagasha ka baxsan dhanka dhidibka M 0.2 +/- 0.1°
Dhexroorka 76.2 mm +/- 0.1 mm
Dhumucda 500 μm +/- 25 μm
Jihada Fidsan ee Aasaasiga ah Diyaarad A (11-20) +/- 0.2°
Dhererka Fidsan ee Aasaasiga ah 22.0 mm +/- 1.0 mm
Dhinac Hal La Safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Dusha Dambe Dhul fiican, Ra = 0.8 μm ilaa 1.2 μm
Dhinac Laba-geesood ah oo la safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Dusha Dambe Epi-polished, Ra < 0.2 nm (by AFM)
TV-ga < 15 μm
QAANSO < 15 μm
WARP < 15 μm
Nadiifin / Baakad Nadiifinta qolka nadiifka ah ee fasalka 100 iyo baakadaha faakuumka,
25 xabbo oo ku jira hal baakad oo cajalad ah ama baakad hal gabal ah.
Shay 4-inji C-plane(0001) 650μm Wafer Sapphire ah
Qalabka Crystal 99,999%, Nadiifin Sare, Monocrystalline Al2O3
Fasal Prime, Epi-Ready
Jihaynta Dusha Sare Diyaaradda C(0001)
C-dibedda xagasha ka baxsan dhanka dhidibka M 0.2 +/- 0.1°
Dhexroorka 100.0 mm +/- 0.1 mm
Dhumucda 650 μm +/- 25 μm
Jihada Fidsan ee Aasaasiga ah Diyaarad A (11-20) +/- 0.2°
Dhererka Fidsan ee Aasaasiga ah 30.0 mm +/- 1.0 mm
Dhinac Hal La Safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Dusha Dambe Dhul fiican, Ra = 0.8 μm ilaa 1.2 μm
Dhinac Laba-geesood ah oo la safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Dusha Dambe Epi-polished, Ra < 0.2 nm (by AFM)
TV-ga < 20 μm
QAANSO < 20 μm
WARP < 20 μm
Nadiifin / Baakad Nadiifinta qolka nadiifka ah ee fasalka 100 iyo baakadaha faakuumka,
25 xabbo oo ku jira hal baakad oo cajalad ah ama baakad hal gabal ah.
Shay 6-inji C-plane(0001) 1300μm Wafer Sapphire ah
Qalabka Crystal 99,999%, Nadiifin Sare, Monocrystalline Al2O3
Fasal Prime, Epi-Ready
Jihaynta Dusha Sare Diyaaradda C(0001)
C-dibedda xagasha ka baxsan dhanka dhidibka M 0.2 +/- 0.1°
Dhexroorka 150.0 mm +/- 0.2 mm
Dhumucda 1300 μm +/- 25 μm
Jihada Fidsan ee Aasaasiga ah Diyaarad A (11-20) +/- 0.2°
Dhererka Fidsan ee Aasaasiga ah 47.0 mm +/- 1.0 mm
Dhinac Hal La Safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Dusha Dambe Dhul fiican, Ra = 0.8 μm ilaa 1.2 μm
Dhinac Laba-geesood ah oo la safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Dusha Dambe Epi-polished, Ra < 0.2 nm (by AFM)
TV-ga < 25 μm
QAANSO < 25 μm
WARP < 25 μm
Nadiifin / Baakad Nadiifinta qolka nadiifka ah ee fasalka 100 iyo baakadaha faakuumka,
25 xabbo oo ku jira hal baakad oo cajalad ah ama baakad hal gabal ah.
Shay 8-inji C-plane(0001) 1300μm Wafer Sapphire ah
Qalabka Crystal 99,999%, Nadiifin Sare, Monocrystalline Al2O3
Fasal Prime, Epi-Ready
Jihaynta Dusha Sare Diyaaradda C(0001)
C-dibedda xagasha ka baxsan dhanka dhidibka M 0.2 +/- 0.1°
Dhexroorka 200.0 mm +/- 0.2 mm
Dhumucda 1300 μm +/- 25 μm
Dhinac Hal La Safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Dusha Dambe Dhul fiican, Ra = 0.8 μm ilaa 1.2 μm
Dhinac Laba-geesood ah oo la safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Dusha Dambe Epi-polished, Ra < 0.2 nm (by AFM)
TV-ga < 30 μm
QAANSO < 30 μm
WARP < 30 μm
Nadiifin / Baakad Nadiifinta qolka nadiifka ah ee fasalka 100 iyo baakadaha faakuumka,
Baakad hal xabbo ah.

 

Shay 12-inji C-plane(0001) 1300μm Wafer Sapphire ah
Qalabka Crystal 99,999%, Nadiifin Sare, Monocrystalline Al2O3
Fasal Prime, Epi-Ready
Jihaynta Dusha Sare Diyaaradda C(0001)
C-dibedda xagasha ka baxsan dhanka dhidibka M 0.2 +/- 0.1°
Dhexroorka 300.0 mm +/- 0.2 mm
Dhumucda 3000 μm +/- 25 μm
Dhinac Hal La Safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Dusha Dambe Dhul fiican, Ra = 0.8 μm ilaa 1.2 μm
Dhinac Laba-geesood ah oo la safeeyey Dusha Hore Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Dusha Dambe Epi-polished, Ra < 0.2 nm (by AFM)
TV-ga < 30 μm
QAANSO < 30 μm
WARP < 30 μm

 

Habka Soo-saarka Wafer Sapphire

  1. Kobaca Crystal

    • Ku beer boules sapphire ah (100–400 kg) adoo isticmaalaya habka Kyropoulos (KY) ee foornooyinka koritaanka kiristaalka ee gaarka ah.

  2. Qoditaanka iyo Qaabaynta Ingot

    • Isticmaal foosto qodis ah si aad u farsamayso boule-ka una beddesho qaybo dhululubo ah oo leh dhexroor 2-6 inji ah iyo dherer 50-200 mm ah.

  3. Buuxinta Koowaad

    • Ka hubi ingots-ka cillado oo samee dab-shidka heerkulka sare ee ugu horreeya si aad u yareyso walbahaarka gudaha.

  4. Jihaynta Crystal

    • Go'aami jihada saxda ah ee isha safayr (tusaale ahaan, C-plane, A-plane, R-plane) adoo isticmaalaya qalabka jiheynta.

  5. Jarida Miinshaar badan oo Wire ah

    • Ingot-ka u jar buskud khafiif ah iyadoo loo eegayo dhumucda loo baahan yahay adoo isticmaalaya qalabka jarista ee fiilooyinka badan leh.

  6. Kormeerka Bilowga ah iyo Qaboojinta Labaad

    • Kormeer buskudka la jaray (dhumucdiisa, fidsanaantiisa, cilladaha dusha sare).

    • Dib u samee nadiifinta haddii loo baahdo si aad u sii wanaajiso tayada kiristaalka.

  7. Chamfering, Shiidi & Nadiifinta CMP

    • Samee shamfering, shiididda dusha sare, iyo nadiifinta farsamada kiimikada (CMP) iyadoo la adeegsanayo qalab gaar ah si loo gaaro dusha sare ee muraayadda.

  8. Nadiifinta

    • Si fiican u nadiifi buskudka adigoo isticmaalaya biyo aad u saafi ah iyo kiimikooyin ku jira jawi nadiif ah si aad uga saarto walxaha iyo wasakhda.

  9. Kormeerka Indhaha iyo Jirka

    • Samee ogaanshaha gudbinta iyo duubista xogta indhaha.

    • Cabbir xuduudaha wafer-ka oo ay ku jiraan TTV (Isbeddelka Guud ee Dhumucda), Qaansada, Warp, saxnaanta jihada, iyo qallafsanaanta dusha sare.

  10. Dahaarka (Ikhtiyaar)

  • Mari dahaarka (tusaale ahaan, dahaarka AR, lakabyada ilaalinta) sida waafaqsan tilmaamaha macaamiisha.

  1. Kormeerka Kama Dambeysta ah iyo Baakaynta

  • Ku samee kormeer tayo leh 100% qol nadiif ah.

  • Bacaha yaryar ku xidh sanduuqyada cajaladaha ee ku jira xaalad nadiif ah oo Fasalka 100 ah oo faakiyuum ku xidh ka hor inta aan la rarin.

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Codsiyada Waferada Sapphire

Waferada Sapphire, oo leh adkeysigooda gaarka ah, gudbinta indhaha ee heer sare ah, waxqabadka kulaylka aadka u fiican, iyo dahaarka korontada, ayaa si ballaaran loogu adeegsadaa warshado badan. Adeegsigoodu ma daboolayo oo keliya warshadaha LED-ka dhaqameed iyo kuwa optoelectronic laakiin sidoo kale waxay ku fidayaan semiconductors, elektaroonigga macaamiisha, iyo goobaha diyaaradaha iyo difaaca ee horumarsan.

1. Semiconductors iyo Optoelectronics

Substrate-yada LED-ka
Waferada Sapphire waa substrate-ka ugu muhiimsan ee koritaanka epitaxial-ka gallium nitride (GaN), oo si weyn loogu isticmaalo LED-yada buluugga ah, LED-yada cad, iyo teknoolojiyada Mini/Micro LED.

Laydhka Laydhka (LDs)
Iyada oo ah walxo loogu talagalay diode-yada laysarka ee ku salaysan GaN, wafer-yada safayr-ka ah waxay taageeraan horumarinta aaladaha laysarka ee awoodda sare leh oo cimri dheer leh.

Sawir-qaadayaasha
Qalabka sawir-qaadayaasha ultraviolet iyo infrared-ka, wafer-yada safayr-ka ah waxaa badanaa loo isticmaalaa daaqado hufan iyo substrate-yo dahaar leh.

2. Qalabka Semiconductor-ka

RFICs (Wareegyada Isku-dhafan ee Soo Noqnoqashada Raadiyaha)
Iyada oo ay ugu wacan tahay dahaarka korantada ee aadka u fiican, wafers-ka safayr-ka ah ayaa ah kuwa ugu habboon aaladaha microwave-ka ee soo noqnoqda sare iyo kuwa awoodda sare leh.

Tiknoolajiyadda Silicon-on-Sapphire (SoS)
Marka la adeegsado tignoolajiyada SoS, awoodda dulinka ayaa si weyn loo dhimi karaa, taasoo kor u qaadaysa waxqabadka wareegga. Tan waxaa si weyn loogu isticmaalaa isgaarsiinta RF iyo elektarooniga hawada sare.

3. Codsiyada Indhaha

Daaqadaha Infrared-ka ee Infrared-ka ah
Iyada oo leh gudbin sare oo ku jirta kala duwanaanshaha hirarka 200 nm–5000 nm, safayr waxaa si ballaaran loogu isticmaalaa dareemayaasha infrared-ka iyo nidaamyada hagitaanka infrared-ka.

Daaqadaha Laser-ka ee Awoodda Sare leh
Adkaanta iyo iska caabbinta kulaylka ee safayrku waxay ka dhigtaa agab aad u fiican oo loogu talagalay daaqadaha ilaalinta iyo muraayadaha nidaamyada laysarka awoodda sare leh.

4. Elektarooniga Macaamiisha

Daboolida Muraayadaha Kamarada
Adkaanta sare ee safayr waxay hubisaa iska caabbinta xoqidda ee muraayadaha casriga ah iyo kamaradaha.

Dareemayaasha Faraha
Waferada Sapphire waxay u adeegi karaan dabool waara oo hufan oo hagaajiya saxnaanta iyo isku halaynta aqoonsiga faraha.

Saacadaha Casriga ah iyo Bandhigyada Heerka Sare ah
Shaashadaha Sapphire waxay isku daraan iska caabinta xoqidda iyo hufnaanta sare ee indhaha, taasoo ka dhigaysa kuwo caan ku ah alaabada elektaroonigga ah ee heerka sare ah.

5. Hawada Sare iyo Difaaca

Gantaalada Infrared-ka ah
Daaqadaha Sapphire waxay ahaadaan kuwo hufan oo deggan xaaladaha heerkulka sare iyo xawaaraha sare leh.

Nidaamyada Aragtida Hawada Sare
Waxaa loo isticmaalaa daaqadaha indhaha ee xoogga badan iyo qalabka daawashada ee loogu talagalay deegaannada aadka u daran.

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Waxyaabaha kale ee Sapphire-ka ee Caadiga ah

Alaabooyinka Indhaha

  • Daaqadaha indhaha ee Sapphire

    • Waxaa loo isticmaalaa laysarka, spectrometers-ka, nidaamyada sawir-qaadista infrared-ka, iyo daaqadaha dareemayaasha.

    • Kala duwanaanshaha gudbinta:UV 150 nm ilaa bartamaha IR 5.5 μm.

  • Muraayadaha Sapphire

    • Waxaa lagu dabaqay nidaamyada laysarka awoodda sare leh iyo muraayadaha hawada sare.

    • Waxaa loo soo saari karaa muraayado qaabaysan, qaabaysan, ama qaabaysan.

  • Prims-ka Sapphire

    • Waxaa loo isticmaalaa qalabka cabbiraadda indhaha iyo nidaamyada sawir-qaadista saxda ah.

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Hawada Sare iyo Difaaca

  • Domes-ka Safayr

    • Ka ilaali kuwa raadinaya infrared-ka gantaalada, UAV-yada, iyo diyaaradaha.

  • Daboolida Ilaalinta Safayr

    • U adkeysan kara saameynta socodka hawada ee xawaaraha sare leh iyo jawiga adag.

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Baakadaha Alaabta

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Ku saabsan XINKEHUI

Shirkadda Shanghai Xinkehui New Material Co., Ltd. waa mid ka mid ah shirkadaha ugu waaweyn ee ka shaqeeya warshadaha.Alaab-qeybiyaha ugu weyn ee indhaha iyo semiconductor-ka ee Shiinaha, oo la aasaasay 2002. XKH waxaa loo sameeyay si ay cilmi-baarayaasha tacliinta u siiso buskudyo iyo agabyo iyo adeegyo kale oo cilmiyeed oo la xiriira semiconductor-ka. Qalabka Semiconductor-ka waa ganacsigeenna ugu weyn ee asaasiga ah, kooxdeennu waxay ku salaysan tahay farsamo ahaan, tan iyo markii la aasaasay, XKH waxay si qoto dheer ugu lug leedahay cilmi-baarista iyo horumarinta agabka elektaroonigga ah ee horumarsan, gaar ahaan qaybta buskudka / substrate-ka kala duwan.

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La-hawlgalayaasha

Iyada oo adeegsanaysa tiknoolajiyadda qalabka semiconductor-ka ee heer sare ah, Shanghai Zhimingxin waxay noqotay lammaane la aamini karo oo ka mid ah shirkadaha ugu sarreeya adduunka iyo hay'adaha tacliinta ee caanka ah. Iyada oo ku adkaysanaysa hal-abuurka iyo heerka sare, Zhimingxin waxay xiriir iskaashi oo qoto dheer la yeelatay hoggaamiyeyaasha warshadaha sida Schott Glass, Corning, iyo Seoul Semiconductor. Iskaashigani ma aha oo kaliya inay hagaajiyeen heerka farsamo ee alaabtayada, laakiin sidoo kale waxay kor u qaadeen horumarka tignoolajiyada ee dhinacyada elektaroonigga korontada, aaladaha optoelectronic, iyo aaladaha semiconductor.

Marka laga soo tago iskaashiga shirkadaha caanka ah, Zhimingxin waxay sidoo kale xiriir iskaashi cilmi baaris oo muddo dheer ah la yeelatay jaamacadaha ugu sarreeya adduunka sida Jaamacadda Harvard, Jaamacadda College London (UCL), iyo Jaamacadda Houston. Iyada oo loo marayo iskaashigan, Zhimingxin ma aha oo kaliya inay bixiso taageero farsamo oo loogu talagalay mashaariicda cilmi-baarista sayniska ee akadeemiyadda, laakiin sidoo kale waxay ka qaybqaadataa horumarinta agabka cusub iyo hal-abuurka tignoolajiyada, iyadoo hubinaysa inaan had iyo jeer safka hore kaga jirno warshadaha semiconductor-ka.

Iyada oo iskaashi dhow la leh shirkadahan caanka ah ee adduunka iyo hay'adaha tacliinta, Shanghai Zhimingxin waxay sii waddaa inay kor u qaaddo hal-abuurka iyo horumarinta tignoolajiyada, iyadoo bixinaysa badeecooyin iyo xalal heer caalami ah si loo daboolo baahiyaha sii kordhaya ee suuqa adduunka.

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