HPSI SiCOI wafer 4 6inch Hydropholic Bonding

Sharaxaad Gaaban:

Nadiifinta-sare ee semi-insulating (HPSI) 4H-SiCOI waferrada waxaa la soo saaray iyadoo la isticmaalayo isku xidhka sare iyo tignoolajiyada khafiifinta. Wafers-yada waxaa lagu sameeyay iyadoo lagu xirayo 4H HPSI silikoon kaarbiide substrates oo lagu dhejiyo lakabyada oksaydhka kulaylka iyada oo loo marayo laba hab oo muhiim ah: isku xidhka hydrophilic (toos ah) iyo isku xidhka dusha firfircoon. Midka dambe wuxuu soo bandhigayaa lakab dhexdhexaad ah oo wax laga beddelay (sida silikoon amorphous, aluminium oxide, ama titanium oxide) si loo hagaajiyo tayada curaarta loona yareeyo goobooyin, gaar ahaan ku habboon codsiyada indhaha. Xakamaynta dhumucda lakabka silikoon carbide waxaa lagu gaaraa iyada oo loo marayo ion SmartCut ku salaysan implantation ama shiidi iyo hababka dhalaalaynta CMP. SmartCut waxay bixisaa lebis dhumucdiisuna sareeyso (50nm-900nm oo leh ± 20nm lebis) laakiin waxaa laga yaabaa inay keento dhaawac yar oo crystal ah oo ay ugu wacan tahay ion implantation, oo saameeya waxqabadka qalabka indhaha. Shiididda iyo dhalaalidda CMP waxay ka fogaataa waxyeellada alaabta waxaana la door bidaa filimada dhumuc weyn (350nm-500µm) iyo quantum ama codsiyada PIC, in kasta oo dhumucdiisu yar tahay (± 100nm). Wafersyada caadiga ah ee 6-inji waxay ka kooban yihiin 1µm ± 0.1µm SiC lakabka 3µm SiO2 ee korka 675µm Si substrates oo leh simannaan dusha sare ah (Rq <0.2nm). Wafers-yadan HPSI SiCOI waxay u adeegaan MEMS, PIC, quantum, iyo soo saarista aaladaha indhaha oo leh tayo wanagsan iyo habacsanaan.

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SiCOI Wafer (Silicon Carbide-on-Insulator) Dulmarka Guryaha

Waferrada SiCOI waa substrate jiilka cusub ee semiconductor isku daraya Silicon Carbide (SiC) oo leh lakab dahaaran, badiyaa SiO₂ ama sapphire, si loo horumariyo waxqabadka elektiroonigga, RF, iyo sawir-qaadista. Hoos waxaa ku yaal dulmar faahfaahsan oo ku saabsan hantidooda oo loo kala saaray qaybo muhiim ah:

Hanti	Sharaxaada
Halabuurka Maaddada	Lakabka Silicon Carbide (SiC) oo ku xidhan substrate dahaarka (sida caadiga ah SiO₂ ama sapphire)
Dhismaha Crystal	Caadi ahaan 4H ama 6H noocyo badan oo SiC ah, oo loo yaqaan tayada kristanta sare iyo labbiska
Guryaha Korontada	Beer koronto oo burbursan (~ 3 MV/cm), bandhi ballaaran (~ 3.26 eV ee 4H-SiC), qulqulaya hoose
Habdhaqanka kulaylka	Heerarka kulaylka sare (~ 300 W/m · K), awood u yeelashada kulaylka hufan
Lakabka Dielectric	Lakabka dahaarka (SiO₂ ama sapphire) wuxuu bixiyaa go'doomin koronto wuxuuna yareeyaa awoodda dulin
Guryaha Makaanikada	Adayg sare (~9 Miisaanka Mohs), xoog makaanik oo aad u wanaagsan, iyo xasilloonida kulaylka
Dhamaystir dusha sare	Caadi ahaan aadka u jilicsan oo leh cufnaanta cilladaha hooseeya, oo ku habboon samaynta qalabka
Codsiyada	Qalabka elektiroonigga ah, aaladaha MEMS, aaladaha RF, dareemayaasha u baahan heerkulka sare iyo dulqaadka korantada

Waferrada SiCOI (Silicon Carbide-on-Insulator) waxay ka dhigan tahay qaab-dhismeedka substrate-ka sare ee semiconductor, oo ka kooban lakab khafiif ah oo tayo sare leh oo silikoon carbide (SiC) oo ku xidhan lakabka dahaarka, sida caadiga ah silicon dioxide (SiO₂) ama sapphire. Silicon carbide waa semiconductor-bandgap ballaaran oo caan ku ah awoodda ay u leedahay in ay u adkeyso tamarta sare iyo heerkulka sare, oo ay weheliso kulaylka kuleylka aad u fiican iyo qallafsanaanta farsamada sare, taas oo ka dhigaysa mid ku habboon codsiyada elektarooniga ah ee awoodda sare, soo noqnoqoshada sare iyo heerkulka sare.

Lakabka dahaadhka ah ee waferrada SiCOI wuxuu bixiyaa go'doomin koronto oo wax ku ool ah, si weyn u yareynaya awoodda dulin iyo qulqulka qulqulka u dhexeeya aaladaha, taas oo kor u qaadeysa waxqabadka guud ee qalabka iyo isku halaynta. Dusha sare ee wafer-ka ayaa si sax ah loo qurxiyey si loo gaaro jilicsanaan aad u jilicsan oo leh cillado yaryar, oo buuxinaya shuruudaha adag ee abuuritaanka aaladaha-yar iyo nano-miisaanka.

Qaab dhismeedka maaddadan kaliya ma hagaajinayo sifooyinka korantada ee aaladaha SiC laakiin sidoo kale wuxuu si weyn u wanaajiyaa maaraynta kulaylka iyo xasilloonida farsamada. Natiijo ahaan, waferrada SiCOI ayaa si weyn loogu isticmaalaa korantada korantada, qaybaha soo noqnoqda raadiyaha (RF), dareemayaasha nidaamyada microelectromechanical (MEMS), iyo qalabka elektiroonigga heer-sare ah. Guud ahaan, waferrada SiCOI waxay isku daraan sifooyinka gaarka ah ee jirka ee silikoon carbide iyo faa'iidooyinka go'doominta korantada ee lakabka insulator, oo siinaya aasaas ku habboon jiilka soo socda ee aaladaha wax-qabadka sare leh.

Codsiga wafer ee SiCOI

Aaladaha Korontada ee Korontada

Shidayaasha korantada sare iyo kuwa awooda sare leh, MOSFETs, iyo diodes

Ka faa'iidayso xadhigga ballaadhan ee SiC, danab burbursan oo sarreeya, iyo xasilloonida kulaylka

Khasaaraha korontada oo hoos u dhacay iyo hufnaanta oo la hagaajiyay ee hababka beddelka tamarta

Qaybaha Soo noqnoqda Raadiyaha (RF).

Transistor-ka-soo noqnoqda-sare iyo amplifiers

Awood yar oo dulin ah oo ay ugu wacan tahay lakabka dahaadhka ayaa kor u qaadaya waxqabadka RF

Ku habboon nidaamka isgaarsiinta 5G iyo radar

Nidaamyada Makaanikada Microelectromechanical (MEMS)

Dareemayaasha iyo hawl-wadeenada ka shaqeeya deegaan adag

Adkeysiga makaanikada iyo firfircoonaanta kiimikada ayaa kordhisa cimriga aaladda

Waxaa ku jira dareemayaasha cadaadiska, xawaaraha-mitirka, iyo gyroscopes

Qalabka Elektarooniga ah ee Heerkulka Sare

Elektrooniga ee baabuurta, hawada hawada, iyo codsiyada warshadaha

Si la isku halleyn karo ugu shaqee heerkul sarreeya halkaasoo silikoonku ku guuldareysto

Qalabka Sawirka

Is dhexgalka qaybaha optoelectronic on substrates insulator

Waxay u sahlaysa sawir-qaadista-chip-ka ee leh maaraynta kulaylka oo la hagaajiyay

SiCOI wafer's Q&A

S:waa maxay wafer SiCOI

A:Waferka SiCOI waxay u taagan tahay waferka Silicon Carbide-on-Insulator. Waa nooc ka mid ah substrate-ka hoose halkaasoo lakabka khafiifka ah ee silikoon carbide (SiC) uu ku xidhan yahay lakab dahaar ah, badiyaa silicon dioxide (SiO₂) ama mararka qaarkood sapphire. Qaab dhismeedkani wuxuu la mid yahay fikradda silikon-on-insulator (SOI) ee caanka ah laakiin wuxuu adeegsadaa SiC halkii uu ka isticmaali lahaa silikon.