Xidhmada HPSI SiCOI 4 6 inji ah oo leh isku xidhnaan Hydropholic ah

Sawirka Soo-bandhigay ee HPSI SiCOI Wafer 4 6inch ah oo leh isku xidhka Hydropholic

Sharaxaad Gaaban:

Wafers-ka 4H-SiCOI ee saafiga ah ee sarreeya (HPSI) waxaa lagu sameeyaa iyadoo la adeegsanayo teknoolojiyada isku-xidhka iyo khafiifinta sare. Wafers-ka waxaa lagu sameeyaa iyadoo lagu xidho substrate-ka 4H HPSI silicon carbide lakabka oksaydhka kulaylka iyada oo loo marayo laba hab oo muhiim ah: isku-xidhka hydrophilic (toos ah) iyo isku-xidhka firfircoon ee dusha sare. Kan dambe wuxuu soo bandhigayaa lakab wax laga beddelay oo dhexdhexaad ah (sida silicon aan qaab lahayn, aluminium oxide, ama titanium oxide) si loo hagaajiyo tayada isku-xidhka loona yareeyo xumbo, gaar ahaan ku habboon codsiyada indhaha. Xakamaynta dhumucda lakabka carbide-ka silicon waxaa lagu gaaraa iyada oo loo marayo SmartCut oo ku salaysan ion-ka ama hababka shiididda iyo nadiifinta CMP. SmartCut waxay bixisaa isku-midnimo dhumuc sare leh (50nm-900nm oo leh ±20nm isku mid ah) laakiin waxay sababi kartaa dhaawac yar oo kiristaal ah sababtoo ah ion-ka ku-xidhka, taasoo saamaysa waxqabadka qalabka indhaha. Shiididda iyo nadiifinta CMP waxay ka fogaataa waxyeelada agabka waxaana loo door bidaa filimada qaro weyn (350nm-500µm) iyo codsiyada quantum ama PIC, inkastoo ay leeyihiin isku-midnimo dhumuc yar (±100nm). Waferada caadiga ah ee 6-inji ah waxay leeyihiin lakab 1µm ±0.1µm SiC ah oo ku yaal lakab 3µm SiO2 ah oo ku yaal dusha sare ee 675µm Si oo leh siman dusha sare ah oo heer sare ah (Rq < 0.2nm). Waferadan HPSI SiCOI waxay u adeegaan wax soo saarka MEMS, PIC, quantum, iyo qalabka indhaha iyadoo leh tayo aad u wanaagsan iyo dabacsanaan habka.

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Astaamaha

Guudmarka Sifooyinka SiCOI Wafer (Silicon Carbide-on-Insulator)

Wafers-ka SiCOI waa substrate semiconductor ah oo jiil cusub ah oo isku daraya Silicon Carbide (SiC) oo leh lakab dahaadh ah, oo badanaa SiO₂ ama sapphire ah, si loo hagaajiyo waxqabadka elektarooniga korontada, RF, iyo photonics. Hoos waxaa ku qoran dulmar faahfaahsan oo ku saabsan sifooyinkooda oo loo kala saaray qaybo muhiim ah:

Hantida	Sharaxaad
Halabuurka Agabka	Lakabka Silicon Carbide (SiC) oo ku dheggan substrate dahaadh leh (badanaa SiO₂ ama safayr)
Qaab-dhismeedka Crystal	Caadi ahaan noocyada polytypes ee 4H ama 6H ee SiC, oo loo yaqaan tayada sare ee kiristaalka iyo isku-midnimada
Sifooyinka Korontada	Garoon koronto oo jaban oo sarreeya (~3 MV/cm), faraq ballaaran (~3.26 eV ee 4H-SiC), hadda daadasho yar
Qaboojinta Kulaylka	Gudbinta kulaylka oo sareysa (~300 W/m·K), taasoo suurtogalinaysa kala-baxa kulaylka oo hufan
Lakabka Dielectric	Lakabka dahaarka leh (SiO₂ ama safayr) wuxuu bixiyaa go'doomin koronto wuxuuna yareeyaa awoodda dulinka
Sifooyinka Farsamada	Adkeyn sare (~ 9 Mohs scale), xoog farsamo oo aad u fiican, iyo xasillooni kuleyl
Dhammaadka Dusha Sare	Caadi ahaan aad u siman oo leh cufnaan cillad yar, oo ku habboon sameynta qalabka
Codsiyada	Elektaroonikada korontada, aaladaha MEMS, aaladaha RF, dareemayaasha u baahan dulqaad heerkul sare iyo danab

Wafers-ka SiCOI (Silicon Carbide-on-Insulator) waxay matalaan qaab-dhismeed semiconductor ah oo horumarsan, oo ka kooban lakab khafiif ah oo tayo sare leh oo ah silicon carbide (SiC) oo ku xiran lakab dahaadh ah, oo caadi ahaan silicon dioxide (SiO₂) ama safayr ah. Silicon carbide waa semiconductor-ka ballaaran ee loo yaqaan awooddiisa ay u adkeysan karto danabyada sare iyo heerkulka sare, oo ay weheliso kuleyl aad u fiican iyo adkaanta farsamada oo sareysa, taasoo ka dhigaysa mid ku habboon codsiyada elektaroonigga ah ee awoodda sare, soo noqnoqoshada sare, iyo heerkulka sare.

Lakabka dahaarka leh ee ku jira wafers-ka SiCOI wuxuu bixiyaa go'doomin koronto oo wax ku ool ah, isagoo si weyn u yareynaya awoodda dulinka iyo qulqulka daadashada ee u dhexeeya aaladaha, taasoo kor u qaadaysa waxqabadka guud ee qalabka iyo isku halaynta. Dusha sare ee wafer-ka si sax ah ayaa loo safeeyey si loo gaaro siman aad u badan oo leh cillado yar, iyadoo la daboolayo baahiyaha adag ee sameynta qalabka yar yar iyo nano-scale.

Qaab-dhismeedkan agabka ah ma aha oo kaliya inuu hagaajiyo astaamaha korantada ee aaladaha SiC laakiin sidoo kale wuxuu si weyn u xoojiyaa maaraynta kulaylka iyo xasilloonida farsamada. Natiijo ahaan, wafers-ka SiCOI waxaa si weyn loogu isticmaalaa elektaroonigga korontada, qaybaha soo noqnoqda raadiyaha (RF), dareemayaasha nidaamyada microelectromechanical (MEMS), iyo elektaroonigga heerkulka sare. Guud ahaan, wafers-ka SiCOI waxay isku daraan sifooyinka jireed ee gaarka ah ee carbide silicon iyo faa'iidooyinka go'doominta korantada ee lakabka dahaarka, iyagoo bixinaya aasaas ku habboon jiilka xiga ee aaladaha semiconductor-ka waxqabadka sare leh.

Codsiga wafer-ka SiCOI

Qalabka Elektarooniga ee Awoodda leh

Dareeraha danab sare iyo kuwa awoodda sare leh, MOSFET-yada, iyo diode-yada

Ka faa'iidayso farqiga ballaaran ee SiC, danab jabitaan sare, iyo xasilloonida kulaylka

Hoos u dhaca khasaaraha korontada iyo hufnaanta hagaajinta nidaamyada beddelka korontada

Qaybaha Soo Noqnoqoshada Raadiyaha (RF)

Transistors-ka iyo amplifiers-ka soo noqnoqda ee sare

Awoodda dulinleyda oo hooseysa oo ay ugu wacan tahay lakabka dahaarka leh waxay kor u qaaddaa waxqabadka RF

Ku habboon nidaamyada isgaarsiinta 5G iyo radar

Nidaamyada Microelectromechanical (MEMS)

Dareemayaasha iyo dhaqaajiyayaashu waxay ka shaqeeyaan jawi adag

Adkaynta farsamada iyo firfircoonida kiimikada ayaa dheereysa cimriga qalabka

Waxaa ku jira dareemayaasha cadaadiska, mitirrada xawaaraha, iyo gyroscopes

Elektaroonikada Heerkulka Sare

Elektaroonikada loogu talagalay codsiyada baabuurta, hawada sare, iyo warshadaha

Si kalsooni leh ugu shaqee heerkul sare halkaas oo silikoonku uu xumaado

Qalabka Sawirka

Is-dhexgalka qaybaha optoelectronic ee ku jira substrates-ka insulator-ka

Waxay awood u siineysaa photonics-ka ku shaqeeya chip-ka iyadoo la hagaajinayo maaraynta kulaylka

Su'aalaha iyo Jawaabaha ee SiCOI wafer

S:Waa maxay wafer SiCOI ah

A:Wafer-ka SiCOI wuxuu u taagan yahay wafer-ka Silicon Carbide-on-Insulator. Waa nooc ka mid ah substrate-ka semiconductor-ka halkaas oo lakab khafiif ah oo ah silicon carbide (SiC) lagu xidho lakab dahaadh ah, badanaa silicon dioxide (SiO₂) ama mararka qaarkood safayr. Qaab-dhismeedkani wuxuu la mid yahay wafer-ka Silicon-on-Insulator (SOI) ee caanka ah laakiin wuxuu isticmaalaa SiC halkii uu ka isticmaali lahaa silicon.