Nadiifnimada Sare ee SiC Muraayadaha indhaha Cubic 4H-semi 6SP Cabbirka La Habeeyay

Nadiif Sarreysa SiC Muraayadaha indhaha Cubic 4H-semi 6SP Cabbirka Sawirka La Habeeyay

Sharaxaad Gaaban:

Lenses SiC (silicon carbide optical lenses) waa qaybo indhaha ah oo sax ah oo laga soo saaray silikoon carbide oo nadiif ah (SiC), oo bixiya sifooyin jireed oo gaar ah iyo waxqabadka indhaha. Lagu sifeeyay dhaqdhaqaaqa kulaylka aadka u sarreeya (490 W/m·K), iskudar hoose ee ballaadhinta kulaylka (4.0 × 10⁻⁶/K), iyo xasilloonida deegaanka ee aad u wanaagsan, muraayadaha SiC waxay noqdeen doorashada ugu habboon ee nidaamyada indhaha ee ku shaqeeya xaalado aad u daran. Muraayadahani waxay muujinayaan waxqabadka gudbinta heer sare ah (gudbinta aan la daboolin>70%) guud ahaan ultraviolet ilaa mowjadaha dhaadheer ee infrared-ka (0.2-6 μm), taasoo ka dhigaysa inay si gaar ah ugu habboon yihiin nidaamyada laysarka awoodda sare leh, indhaha bannaanka, iyo sawirka indhaha ee deegaannada warshadaha adag.

Habka wax soo saarka ee muraayadaha SiC waxay ku lug leedahay shiidid sax ah, dhalaalid sax ah oo sax ah, iyo daawaynta dahaarka khaaska ah si loo gaaro sagxadaha indhaha ee saxnaanta nanoscale (qallafsanaanta dusha <1 nm). Joomateriyada gaarka ah oo ay ku jiraan sagxadaha aspheric iyo qaabka xorta ah waa la soo saari karaa si loo buuxiyo shuruudaha naqshadeynta ee hababka indhaha ee saxda ah.

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Astaamaha

Astaamaha muraayada indhaha ee SiC

1. Sarraynta Maaddada

La qabsiga Deegaanka aadka u daran: U adkaysta heerkulka> 1500°C, daxalka aashitada/alkali ee xooggan, iyo shucaaca tamarta sare leh, oo ku habboon hawada sare iyo xarumaha nukliyeerka.

Xoogga Makaanikada Gaarka ah: Dheeman-dheeman adag (Mohs 9.5), xoog dabacsan> 400 MPa, iyo iska caabbinta saamaynta oo aad uga badan muraayadda indhaha ee caadiga ah.

Xasilloonida kulaylka: Dareenka kulaylka 100 × ka sarreeya silica isku dhafan, oo leh CTE kaliya 1/10 ee galaaska caadiga ah, hubinta xasilloonida baaskiil kuleyl degdeg ah.

2. Faa'iidooyinka Waxqabadka indhaha

Gudbinta muuqaal ballaadhan (0.2-6 μm); dahaar gaar ah ayaa kor u qaadi kara gudbinta ilaa> 95% qaybaha gaarka ah (tusaale, 3-5 μm dhexe-IR).

Luminta kala firdhisanaanta hoose (<0.5%/cm), dhammayn ilaa 10/5 heerka xoqitaanka, iyo fidsanaanta dusha sare λ/10@633 nm.

Heerka waxyeellada sare ee laysarka-ay keentay (LIDT)>15 J/cm² (1064 nm, 10 ns pulses), oo ku habboon nidaamyada xoogga saaraya awoodda sare ee laysarka.

3. Awoodaha Machining Saxda ah

Waxay taageertaa sagxadaha adag (aspheric, freeform) oo leh saxnaanta qaabka <100 nm PV iyo xarun <1 arcmin.

Awood u leh in uu sameeyo lenses SiC oo weyn (dhexroor> 500 mm) oo loogu talagalay telescopes cirbixiyeenada iyo goobaha indhaha.

Codsiyada aasaasiga ah ee muraayada indhaha ee SiC

1. Space Optics & Difaaca

Lenses-ka fog ee dayax-gacmeedka iyo muraayadaha hawada sare, ka faa'iidaysiga sifooyinka fudud ee SiC (cufnaanta 3.21 g/cm³) iyo iska caabbinta shucaaca.

Gantaal doonka daaqadaha indhaha, kuleyliyaha hawada waara (>1000°C) inta lagu jiro duulimaadka hypersonic.

2. Nidaamyada Laser-Awoodda Sare

Muraayadaha diiradda saaraya qalabka goynta / alxanka laser warshadaha, joogtaynta soo-gaadhista dheer ee leysarka joogtada ah ee heerka kW.

Cutubyo qaabeeya beam ee nidaamyada isku-xidhka aan shaqaynayn (ICF), hubinta gudbinta tamar-sare ee saxda ah.

3. Semiconductor & Saxinta Saxda ah

Muraayada SiC waxay u samaysaa muraayadaha indhaha ee EUV, oo leh qallafsanaanta kulaylka <1 nm oo ka hooseeya 10 kW/m² socodka kulaylka.

Muraayadaha Electromagnetic ee qalabka baadhista e-beam, ka faa'iidaysiga hab-dhaqanka SiC ee xakamaynta heerkulka firfircoon.

4. Kormeerka Warshadaha & Tamarta

Muraayadaha Endoscope ee foornooyinka heerkulka sare leh (1500 ° C hawlgal joogto ah).

Qaybaha indhaha ee infrared ee qalabka ceelasha saliidda, iska caabinta cadaadiska godka hoose (> 100 MPa) iyo warbaahinta daxalaysa.

Faa'iidooyinka Tartanka Muhiimka ah

1. Hogaamin Waxqabad oo Dhamaystiran
Muraayadaha SiC waxay ka sarreeyaan qalabka dhaqameed ee indhaha (silica isku dhafan, ZnSe) ee kuleyl/mashiin / kiimiko degganaansho, oo leh "waxqabad sare + ballaarin hoose" guryaha xallinta caqabadaha qallafsanaanta kulaylka ee muraayadaha waaweyn.

2. Waxtarka Qiimaha Nolosha
In kasta oo kharashyada bilowga ahi ay sarreeyaan, nolosha adeegga fidsan ee lenses-ka SiC (5-10× galaaska caadiga ah) iyo hawlgalka aan dayactirka lahayn ayaa si weyn u dhimaya wadarta qiimaha lahaanshaha (TCO).

3. Xorriyadda Naqshadeynta
Hababka isku xidhan ee falcelinta ama CVD waxay awood u siinayaan qaabdhismeedka indhaha ee fudud ee SiC (koobyada malabka), gaaritaanka saamiyo adag-iyo-miisaan aan isbarbar dhigin.

Awoodaha Adeegga XKH

1. Adeegyada Waxsoosaarka Gaarka ah

Xalalka dhamaadka-ilaa-dhamaadka laga bilaabo naqshadaynta indhaha (Jilidda Zemax/Code V) ilaa gaarsiinta kama dambaysta ah, taageerta sagxadaha aspheric/off-axis parabolic freeform.

Dahaarka khaaska ah: ka-hortagga-milicsiga (AR), kaarboon-dheeman-u eg (LIDT>50 J/cm²), ITO-gacan, iwm.

2. Nidaamyada Hubinta Tayada

Qalabka cabbiraadda cabbirka oo ay ku jiraan 4D interferometers iyo profileers-iftiin cad oo hubinaya saxnaanta dusha sare ee λ/20.

Heerka walxaha QC: XRD falanqaynta hanuuninta crystallographic ee SiC kasta oo banaan.

3. Adeegyada Qiimaha lagu daray

Falanqaynta isku dhafka heerkulbeegga-qaabdhismeedka (ANSYS simulation) ee saadaalinta waxqabadka.

Naqshadaynta qaab dhismeedka muraayada SiC ee isku xidhan ee kor u qaadida qaabdhismeedka

Gabagabo

Muraayadaha SiC ayaa dib u qeexaya xaddidaadda waxqabadka ee hababka indhaha ee saxda ah ee saxda ah iyada oo loo marayo sifooyinkooda walxaha aan la barbar dhigi karin. Awoodayada tooska ah ee isku dhafan ee iskudhafka walxaha SiC, farsamaynta saxda ah, iyo tijaabinta waxay soo bandhigaan xalalka indhaha ee kacaanka ee hawada hawada iyo qaybaha wax soo saarka sare. Horumarka laga sameeyay kobaca kristal ee SiC, horumarka mustaqbalka waxa uu diiradda saari doonaa daloolo waaweyn (> 1m) iyo joomateriyada dusha ka adag (qaababka xorta ah).

Sida soo saaraha hormuudka u ah qaybaha indhaha ee horumarsan, XKH waxay ku takhasustay agabka waxqabadka sare leh oo ay ku jiraan sapphire, silicon carbide (SiC), iyo wafers silicon, oo bixiya xalal dhamaadka-ilaa-dhamaadka ah laga bilaabo diyaarinta alaabta ceeriin ilaa dhamaystirka saxda ah. Khibraddeenu waa:

1. Farsamaynta Gaarka ah: Mashiinka saxda ah ee joomatariyada adag (aspheric, freeform) oo leh dulqaad ilaa ± 0.001mm

2. Walaxda Wacan: Sapphire ka shaqaynaysa (UV-IR daaqadaha), SiC (awood sare leh), iyo silicon (IR/micro-optics)

3. Adeegyada lagu daray qiimaha:

Dahaarka ka-hortagga/milicsada (UV-FIR)

Xaqiijinta tayada ay taageerto metrology (λ/20 flatness)

Isku imaatinka qolka nadiifka ah ee codsiyada xasaasiga ah ee wasakhda

U adeegida hawada hawada, semiconductor, iyo warshadaha laysarka, waxaan isku darnaa khibrada sayniska maadiga ah iyo wax soo saarka horumarsan si aan u gaarsiino optics u adkeysanaya bay'ada aadka u daran iyadoo la wanaajinayo waxqabadka indhaha.