GaN ee muraayadda 4-inch: Ikhtiyaarada muraayada la beddeli karo oo ay ku jiraan JGS1, JGS2, BF33, iyo Quartz caadiga ah
Astaamaha
●Fadhi Balaadhan:GaN waxa ay leedahay 3.4 eV bandgap ah, kaas oo u oggolaanaya hufnaan sare iyo adkeysi weyn marka loo eego xaaladaha korantada sare iyo heerkulka sare marka loo eego agabka semiconductor-ka caadiga ah sida silikon.
●Alaabada dhalada ah ee la bedeli karo:La heli karo JGS1, JGS2, BF33, iyo ikhtiyaarrada quraaradaha caadiga ah ee Quartz si ay u daboolaan shuruudaha waxqabadka kulaylka, farsamada iyo indhaha ee kala duwan.
● Dhaqdhaqaaqa Kuleylka Sare:Heerarka kulaylka sare ee GaN waxay hubisaa daadinta kulaylka waxtarka leh, taas oo ka dhigaysa waferradan ku habboon codsiyada tamarta iyo aaladaha dhaliya kuleyl sare.
●Korantada Burburka Sare:Kartida GaN ee joogteynta danab sare ayaa ka dhigaysa waferradan ku habboon transistor-ka tamarta iyo codsiyada soo noqnoqda sare.
●Awoodda Makaanikada ee heer sare ah:Qaybaha dhalada ah, oo ay weheliyaan sifooyinka GaN, waxay bixiyaan xoog farsamo oo adag, kor u qaadaya cimriga wafer-ka ee deegaan baahida loo qabo.
●Qiimaha wax soo saarka oo la dhimay:Marka la barbar dhigo dhaqameedka GaN-on-Silicon ama GaN-on-Sapphire wafers, GaN-on-glass waa xal kharash-ku-ool ah oo wax-soo-saarka baaxadda leh ee aaladaha waxqabadka sare leh.
●Guryaha indhaha ee ku haboon:Ikhtiyaarada muraayadaha kala duwan waxay u oggolaanayaan hagaajinta sifooyinka indhaha ee wafer, taas oo ka dhigaysa mid ku habboon codsiyada optoelectronics iyo photonics.
Tilmaamaha Farsamada
| Halbeegga | Qiimaha |
| Cabirka Wafer | 4-inch |
| Ikhtiyaarada Substrate Glass | JGS1, JGS2, BF33, Quartz caadiga ah |
| Dhumucda lakabka GaN | 100 nm - 5000 nm (la beddeli karo) |
| GaN Bandgap | 3.4 eV (bandhis ballaaran) |
| Burburinta Voltage | Ilaa 1200V |
| Habdhaqanka kulaylka | 1.3 - 2.1 W/cm·K |
| Dhaqdhaqaaqa Electron | 2000 cm²/V·s |
| Wafer Surface Roughness | RMS ~0.25 nm (AFM) |
| Iska caabinta Xaashida GaN | 437.9 Ω·cm² |
| iska caabin | Semi-insulating, N-nooca, nooca P (la beddeli karo) |
| Gudbinta indhaha | > 80% mawjadaha muuqda iyo UV |
| Wafer Warp | <25µm (ugu badnaan) |
| Dhamaystir dusha sare | SSP (dhinac-hal-tooska ah) |
Codsiyada
Optoelectronics:
Waferrada GaN-on-glaass ayaa si weyn loogu isticmaalaa gudahaLEDsiyodareeraha laysarkaiyadoo ay ugu wacan tahay waxtarka sare ee GaN iyo waxqabadka indhaha. Awoodda lagu dooran karo substrates dhalooyinka sidaJGS1iyoJGS2Waxay u ogolaataa in lagu beddelo hufnaanta indhaha, taasoo ka dhigaysa mid ku habboon awoodda sare, iftiinka sareLEDs buluug/cagaaraniyoLaydhka UV.
Sawir-qaadista:
Waferrada GaN-on-glaas ayaa ku habboonsawirqaadayaasha, Wareegyada isku dhafan ee sawir-qaadista (PICs)iyodareemayaasha indhaha. Sifooyinkooda gudbinta iftiinka aadka u fiican iyo xasilloonida sare ee codsiyada soo noqnoqda ayaa ka dhigaya kuwo ku habboonisgaarsiintaiyotignoolajiyada dareemayaasha.
Korantada Korontada:
Iyada oo ay ugu wacan tahay gaabsigooda ballaaran iyo koronta jabinta sare, waferrada GaN-on-glass ayaa loo isticmaalaatransistor-yada awoodda sare lehiyobeddelka awoodda-soo noqnoqda sare. Kartida GaN ee uu ku maareeyo tamarta sare iyo kala dirida kulaylka ayaa ka dhigaysa mid ku habboonamplifiers awoodda, Transistor-ka awoodda RFiyokorontada korontadacodsiyada warshadaha iyo macaamiisha.
Codsiyada Soo noqnoqoshada Sare:
Waferrada GaN-ku-glaasku waxay muujinayaan heer saredhaqdhaqaaqa elektarooniga ahwaxayna ku shaqayn karaan xawaare sare oo beddelasho ah, taasoo ka dhigaysa mid ku habboonaaladaha tamarta-soo noqnoqda sare leh, qalabka microwaveiyoCod-weyneyaasha RF. Kuwani waa qaybo muhim ah oo ku jiraNidaamyada isgaarsiinta 5G, nidaamyada radariyoisgaarsiinta dayax-gacmeedka.
Codsiyada baabuurta:
Waferrada GaN-on-glass sidoo kale waxaa loo isticmaalaa nidaamyada awoodda baabuurta, gaar ahaan gudahaDabaysha dusha sare saaran (OBCs)iyobeddelayaasha DC-DCbaabuurta korontada (EVs). Awooda wafers ee ay ku xakamayso heerkulka sare iyo danabku waxay u ogolaataa in loo isticmaalo korontada korontada ee EVs, oo bixisa hufnaan iyo isku hallayn badan.
Qalabka Caafimaadka:
Guryaha GaN sidoo kale waxay ka dhigaan wax soo jiidasho leh oo lagu isticmaalosawir-caafimaadiyodareemayaasha biomedical. Awoodeeda ku shaqaynta tamarta sare iyo iska caabbinta shucaaca ayaa ka dhigaysa mid ku habboon codsiyada gudahaqalabka ogaanshahaiyoleysarka caafimaadka.
Q&A
Q1: Waa maxay sababta GaN-on-glass u tahay ikhtiyaar wanaagsan marka la barbar dhigo GaN-on-Silicon ama GaN-on-Sapphire?
A1:GaN-glass wuxuu bixiyaa faa'iidooyin dhowr ah, oo ay ku jiraanwax-ku-oolnimadaiyomaaraynta kulaylka wanaagsan. Halka GaN-on-Silicon iyo GaN-on-Sapphire ay bixiyaan waxqabad aad u wanaagsan, muraayadaha muraayadaha ayaa ka jaban, si diyaarsan oo la heli karo, oo la beddeli karo marka la eego sifooyinka muuqaalka iyo farsamada. Intaa waxaa dheer, waferrada GaN-on-glaass waxay bixiyaan waxqabad aad u wanaagsan labadabaindhahaiyocodsiyada elektarooniga ah ee awoodda sare leh.
Q2: Waa maxay faraqa u dhexeeya JGS1, JGS2, BF33, iyo ikhtiyaarrada quraaradaha caadiga ah ee Quartz?
A2:
- JGS1iyoJGS2waa muraayado muraayado indhaha ah oo tayo sare leh oo loo yaqaanohufnaanta indhaha sareiyoballaarinta kulaylka hoose, iyaga oo ka dhigaya kuwo ku habboon aaladaha photonic iyo optoelectronic.
- BF33dhalo waxay bixisaaindex refractive sarewaxayna ku fiican tahay codsiyada u baahan waxqabadka indhaha ee la xoojiyey, sidadareeraha laysarka.
- Quartz caadiga ahwaxay bixisaa sarexasilloonida kulaylkaiyoiska caabinta shucaaca, taas oo ka dhigaysa mid ku habboon codsiyada jawiga heerkulka sare iyo qallafsanaanta.
Q3: Ma u habeyn karaa iska caabbinta iyo nooca doping-ka ee maraqa GaN-on-glass?
A3:Haa, waanu bixinaaiska caabin la beddeli karoiyonoocyada doping(N-nooca ama P-nooca) ee maraqa gaN-ku-glaaska ah. Dabacsanaantu waxay u oggolaanaysaa waferrada in lagu habeeyo codsiyo gaar ah, oo ay ku jiraan aaladaha korontada, LED-yada, iyo nidaamyada sawir-qaadista.
Q4: Waa maxay codsiyada caadiga ah ee GaN-on-glass ee optoelectronics?
A4:In optoelectronics, gaN-on-glass wafers ayaa caadi ahaan loo isticmaalaaLEDs buluug iyo cagaar ah, Laydhka UViyosawirqaadayaasha. Tilmaamaha indhaha ee la beddeli karo ee muraayadda ayaa u oggolaanaya qalabka leh heer saregudbinta iftiinka, taasoo ka dhigaysa inay ku habboon yihiin codsiyada gudahamuujinta tignoolajiyada, iftiiminiyohababka isgaarsiinta indhaha.
Q5: Sidee buu GaN-ku-glaasku u qabtaa codsiyada soo noqnoqonaya?
A5:Waferrada GaN-ku-glaasku waxay bixiyaandhaqdhaqaaqa elektarooniga ah oo aad u fiican, taas oo u oggolaanaysa inay si fiican u qabtaan gudahacodsiyada soo noqnoqda saresidaCod-weyneyaasha RF, qalabka microwaveiyoNidaamyada isgaarsiinta 5G. Danabkooda burburka sarreeya iyo khasaaraha beddelka hooseeya ayaa ka dhigaya kuwo ku habboonaaladaha RF ee awoodda sare leh.
Q6: Waa maxay danab burburka caadiga ah ee waferrada GaN-on-glaas?
A6:Muraayadaha GaN-on-glass caadi ahaan waxay taageeraan korantada burburka ilaa1200V, iyaga oo ka dhigaya kuwo ku habboonawood sareiyokoronto-sarecodsiyada. Xajmigooda ballaaran ayaa u oggolaanaya inay xamili karaan koronto ka sarreeya qalabka semiconductor-ka caadiga ah sida silikoon.
Q7: Ma loo isticmaali karaa maraqa GaN-on-galaas ee codsiyada baabuurta?
A7:Haa, waferrada GaN-ku-glaasada ah ayaa lagu isticmaalaa gudahakorontada baabuurta, oo ay ku jiraanbeddelayaasha DC-DCiyodabaylaha dusha saaran(OBCs) ee baabuurta korontada. Awoodooda ay ku shaqeeyaan heerkul sare oo ay xamili karaan danab sare ayaa ka dhigaya kuwo ku habboon codsiyadan baahida badan.
Gabagabo
Our GaN on Glass 4-inch Wafers waxay bixisaa xal gaar ah oo la beddeli karo ee codsiyada kala duwan ee optoelectronics, korontada, iyo sawir-qaadista. Iyada oo leh ikhtiyaarrada substrate-ka muraayadaha sida JGS1, JGS2, BF33, iyo Quartz caadiga ah, waferradani waxay bixiyaan kala duwanaansho qalabyada makaanikada iyo indhaha labadaba, awood u siinaya xalal ku habboon aaladaha awoodda sare iyo kuwa soo noqnoqda. Haddi ay ahaan lahayd LED-yada, diode-yada laysarka, ama codsiyada RF, waferrada gaN-ku-glaasska ah
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