GaN Epitaxy wafer
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GaN ee muraayadda 4-inch: Ikhtiyaarada muraayada la beddeli karo oo ay ku jiraan JGS1, JGS2, BF33, iyo Quartz caadiga ah
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Gallium Nitride oo ku yaal Wafer Silicon 4inch 6inch Tailored Si Substrate Orientation, Resistivity, iyo N-nooca/P-nooca Options
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GaN-on-SiC Epitaxial Wafers La Habeeyay (100mm, 150mm) - Xulashooyinka Substrate SiC ee Badan (4H-N, HPSI, 4H/6H-P)
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GaN-on-Diamond Wafers 4inch 6inj Wadarta dhumucda epi-dhammed (micron) 0.6 ~ 2.5 ama loo habeeyey Codsiyada Soo noqnoqoshada Sare