Gallium Nitride oo ku yaal Wafer Silicon 4inch 6inch Tailored Si Substrate Orientation, Resistivity, iyo N-nooca/P-nooca Options
Astaamaha
●Fadhi Balaadhan:GaN (3.4 eV) waxay bixisaa horumar la taaban karo oo ku saabsan soo noqnoqoshada sare, awoodda sare, iyo heerkulka sare marka la barbar dhigo silikoon dhaqameed, taasoo ka dhigaysa mid ku habboon qalabka korontada iyo cod-weyneyaasha RF.
●Substrate-ka-habboon ee Jihaynta:Ka dooro jihooyinka kala duwan ee Si substrate sida <111>, <100>, iyo kuwa kale si aad u waafajiso shuruudaha qalabka gaarka ah.
●Dib-u-iska-caabbinta:Kala dooro ikhtiyaarada iska caabbinta ee kala duwan ee Si, laga bilaabo semi-insulating ilaa caabbinta sare iyo adkaysiga hoose si kor loogu qaado waxqabadka qalabka.
●Nooca Doping:Lagu heli karo nooca N-nooca ama nooca P-doping si loo waafajiyo shuruudaha aaladaha korantada, transistor-ka RF, ama LED-yada.
●Korantada Burburka Sare:Waferrada GaN-on-Si waxay leeyihiin danab burbursan oo sarreeya (illaa 1200V), taas oo u oggolaanaysa inay qabtaan codsiyada korantada sare leh.
Xawaaraha beddelka degdega ah:GaN waxay leedahay dhaq-dhaqaaq elektaroonik ah oo sarreeya iyo luminta beddelka hooseeya marka loo eego silikoon, taasoo ka dhigaysa waferrada GaN-on-Si mid ku habboon wareegyada xawaaraha sare leh.
●Waxqabadka kulaylka ee la xoojiyey:In kasta oo kuleylku hooseeyo ee silikoon, GaN-on-Si wali waxay bixisaa degenaansho kulayl sare leh, oo leh kulaylka ka sii fiican marka loo eego aaladaha silikoon ee dhaqameed.
Tilmaamaha Farsamada
| Halbeegga | Qiimaha |
| Cabirka Wafer | 4-inch, 6-inch |
| Jihaynta Substrate-ka | <111>, <100>, caado |
| Si iska caabin | Iska caabin sare, Semi-dahamiyad, adkaysi hoose |
| Nooca Doping | N-nooca, nooca P |
| Dhumucda lakabka GaN | 100 nm - 5000 nm (la beddeli karo) |
| Lakabka Barrier AlGaN | 24% - 28% Al (caadi ah 10-20 nm) |
| Burburinta Voltage | 600V - 1200V |
| Dhaqdhaqaaqa Electron | 2000 cm²/V·s |
| Inta jeer ee beddelka | Ilaa 18 GHz |
| Wafer Surface Roughness | RMS ~0.25 nm (AFM) |
| Iska caabinta Xaashida GaN | 437.9 Ω·cm² |
| Wadarta Wafer Warp | <25µm (ugu badnaan) |
| Habdhaqanka kulaylka | 1.3 - 2.1 W/cm·K |
Codsiyada
Korantada Korontada: GaN-on-Si waxay ku habboon tahay korantada elektiroonigga ah sida korantada korantada, beddelayaasha, iyo beddelayaasha loo isticmaalo nidaamyada tamarta dib loo cusboonaysiin karo, baabuurta korantada (EVs), iyo qalabka warshadaha. Korontadeeda sare ee burburka iyo iska caabbinta hoose waxay hubisaa beddelka tamarta hufan, xitaa codsiyada awoodda sare leh.
RF iyo Isgaarsiinta Microwave: GaN-on-Si wafers waxay bixiyaan awoodo isdaba joog ah oo sarreeya, taas oo ka dhigaysa kuwa ku habboon cod-weyneyaasha RF, isgaarsiinta satellite-ka, nidaamyada radar, iyo teknoolajiyada 5G. Iyada oo leh xawaare sare oo wareeg ah iyo awoodda lagu shaqeynayo wareegyo sare (ilaa18 GHz), Qalabka GaN waxay bixiyaan waxqabad heer sare ah ee codsiyadan.
Gawaarida Elektarooniga ah: GaN-on-Si waxaa loo isticmaalaa nidaamyada awoodda baabuurta, oo ay ku jiraanDabaysha dusha sare saaran (OBCs)iyobeddelayaasha DC-DC. Awoodeeda in ay ku shaqeyso heerkul sare iyo u adkeysiga heerarka tamarta sare waxay ka dhigeysaa mid ku habboon codsiyada gawaarida korontada ee u baahan beddelka tamarta adag.
LED iyo Optoelectronics: GaN waa maadada la doortay LEDs buluug iyo caddaan ah. GaN-on-Si wafers waxaa loo isticmaalaa in lagu soo saaro nidaamyo nalaleed oo tayo sare leh oo LED ah, oo bixiya waxqabad aad u fiican xagga iftiinka, tignoolajiyada soo bandhigida, iyo isgaarsiinta indhaha.
Q&A
Q1: Waa maxay faa'iidada GaN ee silikon ee aaladaha elektiroonigga ah?
A1:GaN waxay leedahayfaashad ballaaran (3.4 eV)marka loo eego silikoon (1.1 eV), taas oo u ogolaanaysa in ay u adkeysato tamarta sare iyo heerkulka. Hantidan waxa ay u sahlaysa GaN in ay si wax ku ool ah u maareyso codsiyada awooda sare leh, yaraynta luminta tamarta iyo kordhinta waxqabadka nidaamka. GaN sidoo kale waxay bixisaa xawaaraha beddelka degdega ah, kuwaas oo muhiim u ah aaladaha soo noqnoqda sida cod-weyneyaasha RF iyo beddelayaasha awoodda.
Q2: Ma u habeyn karaa hanuuninta substrate-ka codsigeyga?
A2:Haa, waanu bixinaala beddeli karo Si substrate jiheyntasida<111>, <100>, iyo jihayn kale oo ku xidhan shuruudaha qalabkaaga. Jihaynta substrate-ka Si ayaa door muhiim ah ka ciyaara waxqabadka qalabka, oo ay ku jiraan sifooyinka korantada, dabeecada kulaylka, iyo xasiloonida makaanikada.
Q3: Waa maxay faa'iidooyinka isticmaalka wafers GaN-on-Si ee codsiyada soo noqnoqonaya?
A3:Waferrada GaN-on-Si waxay bixiyaan heer sarexawaaraha beddelka, oo awood u siinaya hawlgal degdeg ah oo ku saabsan soo noqnoqoshada sare marka loo eego silikoon. Tani waxay ka dhigaysaa inay ku habboon yihiinRFiyomicrowavecodsiyada, iyo sidoo kale-frequency sareqalabka korontadasidaHEMTs(High Electron Mobility Transistors) iyoCod-weyneyaasha RF. Dhaqdhaqaaqa elektaroonigga sare ee GaN waxa kale oo ay keentaa lumitaanka beddelka oo yaraada iyo hufnaanta oo hagaagtay.
Q4: Waa maxay xulashooyinka doping-ka ee loo heli karo waferrada GaN-on-Si?
A4:Waxaan bixinaa labadabaN-noocaiyoNooca Pdoping, kuwaas oo inta badan loo isticmaalo noocyada kala duwan ee qalabka semiconductor.Nooca N-dopingayaa ku habboontransistors korontoiyoCod-weyneyaasha RF, halkaNooca P-dopingInta badan waxaa loo isticmaalaa aaladaha optoelectronic sida LEDs.
Gabagabo
Gallium Nitride-kayaga la Habeeyay ee Silicon (GaN-on-Si) Wafers ayaa bixiya xalka ugu habboon ee codsiyada heerkulka-sare, awoodda sare iyo heerkulka sare. Iyada oo la hagaajin karo jiheynta substrate-ka, iska caabbinta, iyo nooca N-nooca/P-doping, waferradan waxaa loogu talagalay inay daboolaan baahiyaha gaarka ah ee warshadaha oo u dhexeeya korantada elektiroonigga ah iyo nidaamyada baabuurta ilaa isgaarsiinta RF iyo tignoolajiyada LED. Ka faa'iidaysiga sifooyinka sare ee GaN iyo miisaanka silikoon, waferradani waxay bixiyaan waxqabad la xoojiyay, hufnaan, iyo caddaynta mustaqbalka ee qalabka soo socda.
Jaantus faahfaahsan
