Gallium Nitride (GAN) Epitaxial oo ku koray Sapphire Wafers 4inch 6inch for MEMS

Gallium Nitride (GAN) Epitaxial oo ku koray Sapphire Wafers 4inch 6inch oo loogu talagalay Sawirka Muuqda ee MEMS

Sharaxaad Gaaban:

Gallium Nitride (GaN) on wafers Sapphire waxay bixisaa waxqabad aan la mid ahayn oo loogu talagalay codsiyada soo noqnoqda iyo awoodda sare, taas oo ka dhigaysa sheyga ugu habboon ee jiilka soo socda ee RF (Radio Frequency) qaybaha hore, nalalka LED, iyo qalabka kale ee semiconductor.GANTilmaamaha korantada ee sarreeya, oo ay ku jiraan xirmo sare, waxay u oggolaanayaan inay ku shaqeyso koronto burbursan iyo heerkul sare marka loo eego aaladaha dhaqameed ee silikon-ku-saleysan. Maaddaama GaN si sii kordheysa loogu aqbaley silikoon, waxay wadey horumarka dhanka elektiroonigga ah ee u baahan walxo fudud, xoog badan, oo hufan.

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Faahfaahinta Alaabta

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Guryaha GaN ee ku yaal Sapphire Wafers

● Waxtarka sare:Aaladaha GaN-ku-saleysan waxay bixiyaan shan jeer ka awood badan aaladaha silikon-ku-saleysan, iyagoo kor u qaadaya waxqabadka codsiyada kala duwan ee elegtarooniga ah, oo ay ku jiraan cod-weyneysiinta RF iyo optoelectronics.
●Fadhi Balaadhan:Farsamaynta ballaaran ee GaN waxay awood u siinaysaa waxtarka sare ee heerkulka sare, taasoo ka dhigaysa mid ku habboon codsiyada awoodda sare iyo kuwa soo noqnoqonaya.
●Waarta:Awoodda GaN ee ah in ay wax ka qabato xaaladaha ba'an (heerkulka sare iyo shucaaca) waxay hubisaa waxqabadka muddada-dheer ee deegaannada adag.
●Xajmiga yar:GaN waxay u ogolaataa soo saarida qalabyo cufan oo fudud marka la barbar dhigo agabka semiconductor-dhaqameedka, fududaynta qalabka elektiroonigga ee yar yar oo ka xoog badan.

Abstract

Gallium Nitride (GaN) waxay u soo baxaysaa sidii semiconductor-ka doorashada codsiyada horumarsan ee u baahan awood sare iyo hufnaan, sida qaybaha hore ee RF, nidaamyada isgaarsiinta xawaaraha sare leh, iyo iftiinka LED. GaN epitaxial wafers, marka lagu koray sapphire substrates, waxay bixiyaan isku-dar ah kulaylka sareeyo, korantada burburka sare, iyo jawaab celinta soo noqnoqda ballaaran, kuwaas oo fure u ah waxqabadka ugu wanaagsan ee aaladaha isgaarsiinta wireless, radar, iyo jammers. Waferradan ayaa lagu heli karaa dhexroorka 4-inch iyo 6-inch, oo leh dhumucyo kala duwan oo GaN ah si loo buuxiyo shuruudaha farsamo ee kala duwan. Guryaha gaarka ah ee GaN ayaa ka dhigaya musharraxa koowaad ee mustaqbalka korontada.

Qiyaasta Alaabta

Tilmaamaha Alaabta	Tilmaamid
Dhexroorka Wafer	50mm, 100mm, 50.8mm
Substrate	Sapphire
Dhumucda lakabka GaN	0.5 μm - 10 μm
Nooca GaN/Doping	Nooca N-nooca (P-nooca ayaa la heli karaa marka la codsado)
Hanuuninta GaN Crystal	<0001>
Nooca suufka	Hal-Dhinac Dhan ah (SSP), Laba-Dhinac Dabooshay (DSP)
Dhumucda Al2O3	430 μm - 650 μm
TTV (Wadarta kala duwanaanshaha dhumucda)	≤ 10 μm
Qaansada	≤ 10 μm
Warp	≤ 10 μm
Aagga Dusha sare	Aagga dusha sare ee la isticmaali karo> 90%

Q&A

Q1: Waa maxay faa'iidooyinka ugu muhiimsan ee isticmaalka GaN ee semiconductors-dhaqameedka silikoon?

A1: GaN waxay bixisaa faa'iidooyin dhowr ah oo muhiim ah marka loo eego silikoon, oo ay ku jiraan bandgap ballaaran, kaas oo u oggolaanaya inay xakameyso koronto-jabka sare oo ay si hufan ugu shaqeyso heerkul sare. Tani waxay GaN ka dhigeysaa mid ku habboon codsiyada awoodda sare leh, soo noqnoqda sare sida modules RF, cod-weyneyaasha, iyo LED-yada. Awoodda GaN ee ah in ay wax ka qabato cufnaanta awoodda sare waxay sidoo kale awood u siisaa aaladaha yar yar oo waxtarka badan marka la barbar dhigo beddelka ku saleysan silikon.

Q2: GaN on wafers Sapphire ma loo isticmaali karaa codsiyada MEMS (Nidaamka Makaanikada Micro-Electro-Mechanical)?

A2: Haa, GaN on wafers Sapphire waxay ku habboon tahay codsiyada MEMS, gaar ahaan halka awoodda sare, xasilloonida heerkulka, iyo qaylada hoose loo baahan yahay. Adkeysiga walxaha iyo hufnaanta jawiga soo noqnoqonaya ayaa ka dhigaya mid ku habboon aaladaha MEMS ee loo isticmaalo isgaarsiinta wireless-ka, dareenka, iyo nidaamyada radar.

Q3: Waa maxay codsiyada suurtagalka ah ee GaN ee isgaarsiinta wireless?

A3: GaN waxaa si weyn loogu isticmaalaa qaybaha hore ee RF ee isgaarsiinta wireless, oo ay ku jiraan kaabayaasha 5G, nidaamyada radar, iyo jammers. Awooddeeda sare ee cufnaanta iyo kuleylka kuleylka ayaa ka dhigaya mid ku habboon awoodda sare, aaladaha soo noqnoqda, awood u yeelashada waxqabadka wanaagsan iyo arrimo yaryar marka la barbar dhigo xalalka silikoon.

Q4: Waa maxay wakhtiyada hogaanka iyo tirada ugu yar ee la soo daabici karo ee GaN ee waferrada Sapphire?

A4Waqtiyada hogaanka iyo tirada dalabka ugu yar way kala duwan yihiin iyadoo ku xidhan cabbirka waferka, dhumucda GaN, iyo shuruudaha gaarka ah ee macaamiisha. Fadlan si toos ah nala soo xiriir si aad u hesho qiimeyn faahfaahsan iyo helitaan ku saleysan tilmaamahaaga.

Q5: Miyaan heli karaa dhumucda lakabka GaN ee caadada ah ama heerarka doping?

A5: Haa, waxaan bixinaa habeynta dhumucda GaN iyo heerarka doping si loo daboolo baahiyaha codsi ee gaarka ah. Fadlan noo sheeg faahfaahinta aad rabto, waxaanan ku siin doonaa xal ku habboon.