Lakabka Epitaxial
-
200mm 8inch GaN oo ku dul yaal sapphire-lakabka wafer substrate-ka
-
GaN ee muraayadda 4-inch: Ikhtiyaarada muraayada la beddeli karo oo ay ku jiraan JGS1, JGS2, BF33, iyo Quartz caadiga ah
-
AlN-on-NPSS Wafer: Lakabka Aluminium Nitride Waxqabadka Sare ee Sapphire Substrate-ka aan Toosanayn ee Heerkulka Sare, Awood Sare, iyo Codsiyada RF
-
Gallium Nitride on wafer Silicon 4inch 6inch Tailored Si Substrate Orientation, Resistivity, iyo N-nooca/P-nooca Options
-
GaN-on-SiC Epitaxial Wafers La Habeeyay (100mm, 150mm) - Xulashooyinka Substrate SiC ee Badan (4H-N, HPSI, 4H/6H-P)
-
GaN-on-Diamond Wafers 4inch 6inch Wadarta dhumucda lakabka (micron) 0.6 ~ 2.5 ama loo habeeyey Codsiyada Soo noqnoqoshada Sare
-
GaAs awoodda sare ee epitaxial wafer substrate gallium arsenide wafer awood leysarka dhererka hirarka 905nm ee daaweynta laysarka
-
InGaAs substrate wafer substrate PD Array sawir-qaade ayaa loo isticmaali karaa LiDAR
-
2inch 3inch 4inch InP epitaxial wafer substrate APD iftiinka isgaarsiinta fiber optic ama LiDAR
-
Substrate Silicon-on-Insulator Substrate SOI wafer saddex lakab oo ah Microelectronics iyo Soo noqnoqoshada Raadiyaha
-
SOI wafer insulator on silikoon 8-inch iyo 6-inch SOI (Silicon-On-Insulator) wafers
-
6inch SiC Epitaxyy wafer N/P nooca aqbal habaysan