Substrate Electrode Sapphire iyo Wafer C-plane LED Substrates

Substrate-ka Sapphire Electrode iyo Wafer C-diyaarada LED Substrates Sawirka

Sharaxaad Gaaban:

Iyada oo ku saleysan casriyeynta joogtada ah ee tignoolajiyada sapphire iyo ballaarinta degdega ah ee suuqa arjiga, 4 inch iyo 6 inch substrate wafers ayaa si aad ah u qaadan doona shirkadaha chip-ka caadiga ah sababtoo ah faa'iidooyinka ku jira ka faa'iidaysiga wax soo saarka.

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Tilmaamid

GUUD
Foomamka Kiimikada	Al2O3
Dhismaha Crystal	Nidaamka Hexagonal (hk o 1)
Cabirka Unugga Unugga	a=4.758 Å,Å c=12.991 Å, c:a=2.730
JIR AH
	Metric	Ingiriisi (Imperial)
Cufnaanta	3.98 g/cc	0.144 lb/in3
Adag	1525 - 2000 Knoop, 9 mhos	3700F
Meesha dhalaalaysa	2310 K (2040° C)
DHISMAHA
Xoogga Jilicsan	275 MPa ilaa 400 MPa	40,000 ilaa 58,000 psi
Xoog-jilicsanaanta 20°C		58,000 psi (naqshad daqadda.)
Xoog-jilicsanaanta 500°C		40,000 psi (naqshad daqadda.)
Xoog-jilicsanaanta 1000C	355 MPa	52,000 psi (naqshad daqiqo)
Xoojinta dabacsanaanta	480 MPa ilaa 895 MPa	70,000 ilaa 130,000 psi
Xoogga Isku-buufinta	2.0 GPA (ugu dambeeya)	300,000 psi (ugu dambeeya)

Sapphire oo ah substrate-ka wareega semiconductor

Wafers sapphire-ka khafiifka ah ayaa ahaa adeegsigii ugu horreeyay ee lagu guulaysto ee substrate dahaarka kaas oo silikon lagu shubay si loo sameeyo wareegyo isku dhafan oo loo yaqaan Silicon on sapphire (SOS). Marka lagu daro sifooyinkeeda dahaarka korantada ee aadka u wanaagsan, sapphire waxa ay leedahay kulaylka sareeyo

Wafers sapphire-ka kelida ah ayaa sidoo kale loo isticmaalaa sida substrates warshadaha semiconductor ee koraya gallium nitride (GaN) oo ku saleysan aaladaha. Isticmaalka sapphire wuxuu si weyn u yareeyaa kharashka maadaama uu ku saabsan yahay 1/7th qiimaha germanium.GaN on sapphire waxaa caadi ahaan loo isticmaalaa diodes iftiinka buluuga ah (LEDs).

U isticmaal sida alaabta daaqadda

Sapphire synthetic (mararka qaarkood loo yaqaan sapphire galaas) ayaa badanaa loo isticmaalaa sida walxaha daaqada sababtoo ah aad bay u hufan tahay inta u dhaxaysa 150 nm (ultraviolet) iyo 5500 nm (infrared) hirarka iftiinka waxayna leedahay iska caabin aad u sarreeya oo xagashada. Faa'iidooyinka muhiimka ah ee daaqadaha sapphire

Ku dar

Xawaaladaha gudbinta indhaha oo aad u ballaaran, laga bilaabo UV ilaa iftiinka infrared-ka dhow

Ka xoog badan alaabta kale ee indhaha ama daaqadaha muraayadaha

Aad u adkeysi badan u leh xagashada iyo xoqidda (adkeydka macdanta 9 ee miisaanka Mohs, oo ka xigta kaliya dheeman iyo moissanite oo ka mid ah walxaha dabiiciga ah)

Bar dhalaalaysa oo aad u saraysa (2030°C)