Substrate-ka Electrode Sapphire Substrate iyo Wafer C-plane LED Substrate-ka
Faahfaahinta
| GUUD | ||
| Qaaciddada Kiimikada | Al2O3 | |
| Crystal Stucture | Nidaamka Lix-geesoodka ah (hk o 1) | |
| Cabbirka Unugga Cutubka | a=4.758 Å,Å c=12.991 Å, c:a=2.730 | |
| JIRKA | ||
| Metrik | Ingiriis (Imperial) | |
| Cufnaanta | 3.98 g/cc | 0.144 lb/in3 |
| Adkaanta | 1525 - 2000 Knoop, 9 mhos | 3700° F |
| Barta Dhalmada | 2310 K (2040° C) | |
| QAAB-DHISMEED | ||
| Xoogga Tijaabada | 275 MPa ilaa 400 MPa | 40,000 ilaa 58,000 psi |
| Xoogga jiidista ee 20° C | 58,000 psi (naqshadeynta ugu yar) | |
| Xoogga jiidista ee 500° C | 40,000 psi (naqshadeynta ugu yar) | |
| Xoogga jiidista ee 1000° C | 355 MPa | 52,000 psi (naqshadeynta ugu yar) |
| Xoogga dabacsanaanta | 480 MPa ilaa 895 MPa | 70,000 ilaa 130,000 psi |
| Xoogga Cadaadiska | 2.0 GPa (ugu dambeyntii) | 300,000 psi (ugu dambeyntii) |
Safayr sida substrate-ka wareegga semiconductor-ka
Wafers-ka khafiifka ah ee safayr-ka ayaa ahaa isticmaalkii ugu horreeyay ee guuleysta ee substrate-ka dahaarka leh ee silicon-ka lagu shubay si loogu sameeyo wareegyo isku dhafan oo loo yaqaan silicon on sapphire (SOS). Marka laga soo tago sifooyinkeeda dahaarka korantada ee aadka u fiican, safayr-ku wuxuu leeyahay dahaar kuleyl oo sarreeya. Chips-ka CMOS ee safayr-ka ayaa si gaar ah ugu habboon codsiyada soo noqnoqda raadiyaha awoodda sare leh (RF) sida taleefannada gacanta, raadiyaha band-ka badbaadada dadweynaha iyo nidaamyada isgaarsiinta dayax-gacmeedka.
Wafers-ka hal-ka-midka ah ee sapphire-ka ayaa sidoo kale loo isticmaalaa sidii substrate-yo warshadaha semiconductor-ka si loogu beero aaladaha ku salaysan gallium nitride (GaN). Isticmaalka sapphire-ku wuxuu si weyn u yareeyaa kharashyada maadaama ay tahay qiyaastii 1/7aad qiimaha germanium. GaN-ka sapphire-ka waxaa badanaa loo isticmaalaa diode-yada iftiinka buluugga ah (LEDs).
U isticmaal sida agab daaqadeed
Sapphire macmal ah (mararka qaarkood waxaa loogu yeeraa galaas sapphire ah) waxaa badanaa loo isticmaalaa sidii walxo daaqadeed sababtoo ah waa mid aad u hufan oo u dhexeeya 150 nm (ultraviolet) iyo 5500 nm (infrared) hirarka iftiinka (muuqaalka muuqda wuxuu u dhexeeyaa qiyaastii 380 nm ilaa 750 nm) wuxuuna leeyahay iska caabin aad u sareysa oo ku saabsan xoqidda. Faa'iidooyinka muhiimka ah ee daaqadaha sapphire
Ku dar
Xawaaraha gudbinta indhaha oo aad u ballaaran, laga bilaabo UV ilaa iftiinka ku dhow infrared
Ka xoog badan agabka kale ee indhaha ama daaqadaha galaaska
Aad u adkaysi badan xoqidda iyo xoqidda (adagaanshaha macdanta ee 9 ee miisaanka Mohs, oo ka dambeysa dheemanka iyo moissanite oo ka mid ah walxaha dabiiciga ah)
Meel aad u dhalaalaysa oo aad u sareysa (2030°C)
Jaantus Faahfaahsan
