Dia150mm 4H-N 6inch SiC substrate Soo saarista iyo darajada carrabka leh
Tilmaamaha ugu muhiimsan ee 6 inch silicon carbide mosfet wafers waa sida soo socota;
U adkaysiga korantada sare: Silicon carbide waxay leedahay garoon koronto oo burbursan oo sarreeya, sidaa darteed 6 inch silicon carbide mosfet wafers waxay leeyihiin awood u adkeysiga danab sare, oo ku habboon xaaladaha dalabka tamarta sare.
Cufnaanta hadda sare: Silicon carbide waxay leedahay dhaqdhaqaaq elektaroonig ah oo weyn, taasoo ka dhigaysa 6-inji silikoon carbide mosfet wafers inay leeyihiin cufnaanta hadda jirta si ay ugu adkaysato hadda weyn.
Inta jeer ee hawlgalka sare: Silicon carbide waxa uu leeyahay dhaqdhaqaaqa sideyaasha hooseeya, samaynta 6-inji silicon carbide mosfet wafers leeyihiin soo noqnoqda hawlgalka sare, ku haboon xaaladaha codsiga-soo noqnoqda.
Deganaanshaha kulaylka wanaagsan: Silicon carbide waxay leedahay koror kuleyl sare leh, taasoo ka dhigaysa 6-inji silikoon carbide mosfet wafers wali waxay leeyihiin waxqabad wanaagsan jawiga heerkulka sare.
6 inch silicon carbide mosfet wafers waxaa si weyn loogu isticmaalaa meelaha soo socda: korontada korontada, oo ay ku jiraan transformers, rectifiers, inverters, amplifiers, iwm
Waxaan ku siin karnaa 4H-N 6inch substrate SiC, darajooyin kala duwan oo maraqa substrate-ka ah. Waxa kale oo aanu diyaarin karnaa habayn ku salaysan baahidaada. Weydiinta soo dhawoow!
Jaantus faahfaahsan
