Habka CVD ee lagu soo saaro walxaha ceeriin ee SiC saafi ah oo sarreeya foornada isku-darka carbide-ka silicon ee 1600℃

Sharaxaad Gaaban:

Foorno isku-darka Silicon carbide (SiC) (CVD). Waxay isticmaashaa tignoolajiyada Kiimikada ee Uumiga (CVD) si ay u hesho ilo silicon gaas ah (tusaale ahaan SiH₄, SiCl₄) jawi heerkul sare leh oo ay ka falceliyaan ilo kaarboon (tusaale ahaan C₃H₈, CH₄). Qalab muhiim ah oo lagu beero kiristaalo carbide silicon ah oo saafi ah oo ku yaal substrate (graphite ama iniin SiC). Tiknoolajiyadu waxay inta badan loo isticmaalaa diyaarinta substrate keli ah oo SiC ah (4H/6H-SiC), kaas oo ah qalabka habka ugu muhiimsan ee loogu talagalay soo saarista semiconductor-yada awoodda (sida MOSFET, SBD).

Noo soo dir emayl

Astaamaha

Mabda'a shaqada:

1. Sahayda horudhaca ah. Isha silikoon (tusaale ahaan SiH₄) iyo gaasaska kaarboonka (tusaale ahaan C₃H₈) ayaa lagu qasaa saamiga waxaana lagu shubaa qolka falcelinta.

2. Kala-go'idda heerkulka sare: Heerkulka sare ee 1500 ~ 2300℃, kala-go'idda gaaska waxay soo saartaa atamka firfircoon ee Si iyo C.

3. Falcelinta dusha sare: Atomyada Si iyo C waxaa lagu shubaa dusha sare ee substrate-ka si ay u sameeyaan lakab kiristaal ah oo SiC ah.

4. Kobaca kiristaalka: Iyada oo loo marayo xakamaynta heerkulka, socodka gaaska iyo cadaadiska, si loo gaaro koboc jiho ah oo ku teedsan dhidibka c ama dhidibka a.

Xuduudaha Muhiimka ah:

· Heerkulka: 1600~2200℃ (>2000℃ ee 4H-SiC)

· Cadaadiska: 50~200mbar (cadaadis hooseeya si loo yareeyo nucleation-ka gaaska)

· Saamiga gaaska: Si/C≈1.0~1.2 (si looga fogaado cilladaha kobcinta Si ama C)

Astaamaha ugu muhiimsan:

(1) Tayada kiristaliska
Cufnaanta cilladaha hooseeya: cufnaanta microtubule < 0.5cm ⁻², cufnaanta kala-baxa < 10⁴ cm⁻².

Xakamaynta nooca Polycrystalline: waxay kori kartaa 4H-SiC (mainstream), 6H-SiC, 3C-SiC iyo noocyada kale ee kiristaalka.

(2) Waxqabadka qalabka
Xasillooni heerkul sare leh: kuleylinta induction graphite ama kuleyl iska caabin ah, heerkulka > 2300℃.

Xakamaynta midnimada: isbeddelka heerkulka ±5℃, heerka koritaanka 10 ~ 50μm/saacaddii.

Nidaamka gaaska: Cabbiraha qulqulka cufka oo sax ah (MFC), daahirnimada gaaska ≥99.999%.

(3) Faa'iidooyinka Tiknoolajiyadda
Nadiifnimo Sare: Fiirsashada wasakhda asalka <10¹⁶ cm⁻³ (N, B, iwm.).

Cabbir weyn: Taageer koritaanka substrate-ka 6 "/8" ee SiC.

(4) Isticmaalka tamarta iyo kharashka
Isticmaalka tamarta sare (200 ~ 500kW·h halkii foorno), taasoo ka dhigan 30% ~ 50% qiimaha wax soo saarka ee substrate-ka SiC.

Codsiyada Muhiimka ah:

1. Substrate-ka semiconductor-ka awoodda leh: SiC MOSFET-yada loogu talagalay soo saarista gawaarida korontada ku shaqeeya iyo kuwa korantada ku shaqeeya.

2. Qalabka Rf: Saldhigga saldhigga 5G ee GaN-on-SiC substrate epitaxial.

3. Qalabka deegaanka ee aadka u daran: dareemayaasha heerkulka sare ee loogu talagalay warshadaha hawada sare iyo tamarta nukliyeerka.

Tilmaamaha Farsamada:

Faahfaahinta	Faahfaahinta
Cabbirrada (L × W × H)	4000 x 3400 x 4300 mm ama habayn
Dhexroorka qolka foornada	1100mm
Awoodda rarista	50kg
Heerka vacuum-ka xadka	10-2Pa (2 saacadood ka dib marka bamka molecular uu bilaabo)
Heerka kor u kaca cadaadiska qolka	≤10Pa/h (ka dib kaalshiyamka)
Daboolka hoose ee foornada kor u qaadista	1500mm
Habka kululaynta	Kuleylinta induction
Heerkulka ugu badan ee foornada	2400°C
Korontada kululaynta	2X40kW
Cabbirka heerkulka	Cabbirka heerkulka infrared-ka laba-midab leh
Heerkulka kala duwan	900~3000℃
Saxnaanta xakamaynta heerkulka	±1°C
Kala duwanaanshaha cadaadiska xakamaynta	1~700mbbar
Saxnaanta Xakamaynta Cadaadiska	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar
Habka rarista	Rarka hoose;
Qaabeynta ikhtiyaariga ah	Bar cabbiraadda heerkulka labanlaab ah, oo ah fargeeto-qaadis dejinaysa.

Adeegyada XKH:

XKH waxay bixisaa adeegyo wareeg buuxa ah oo loogu talagalay foornooyinka CVD ee silikoon carbide, oo ay ku jiraan habaynta qalabka (naqshadeynta aagga heerkulka, qaabeynta nidaamka gaaska), horumarinta habka (xakamaynta kiristaalka, hagaajinta cilladaha), tababarka farsamada (hawlgalka iyo dayactirka) iyo taageerada iibka kadib (sahayda qaybaha dheeraadka ah ee qaybaha muhiimka ah, ogaanshaha fog) si looga caawiyo macaamiisha inay gaaraan wax soo saar tayo sare leh oo substrate SiC ah. Iyo bixinta adeegyada casriyeynta habka si joogto ah loogu hagaajiyo wax soo saarka kiristaalka iyo hufnaanta koritaanka.