Substrates Seed SiC ah oo loo habeeyey Dia 205/203/208 Nooca 4H-N ee Isgaarsiinta Indhaha

Sharaxaad Gaaban:

Substrate-ka abuurka ee SiC (silicon carbide), oo ah sideyaasha asaasiga ah ee walxaha semiconductor-ka jiilka saddexaad, waxay ka faa'iidaystaan gudbinta kulaylka sare (4.9 W/cm·K), xoogga goobta burburka aadka u sarreeya (2-4 MV/cm), iyo farqiga ballaaran (3.2 eV) si ay ugu adeegaan agab aasaasi ah oo loogu talagalay optoelectronics, gawaarida tamarta cusub, isgaarsiinta 5G, iyo codsiyada hawada sare. Iyada oo loo marayo teknoolojiyada wax soo saarka ee horumarsan sida gaadiidka uumiga jirka (PVT) iyo epitaxy-ga marxaladda dareeraha ah (LPE), XKH waxay bixisaa substrate-ka abuurka nooca 4H/6H-N, semi-insulating, iyo 3C-SiC ee noocyada wafer-ka 2-12-inch, oo leh cufnaanta micropipe ka hooseeya 0.3 cm⁻², iska caabintu waxay u dhaxaysaa 20-23 mΩ·cm, iyo qallafsanaanta dusha sare (Ra) <0.2 nm. Adeegyadayadu waxaa ka mid ah koritaanka heteroepitaxial (tusaale ahaan, SiC-on-Si), mashiinka saxnaanta nanoscale (±0.1 μm dulqaad), iyo gaarsiinta degdegga ah ee caalamiga ah, taasoo awood siinaysa macaamiisha inay ka gudbaan caqabadaha farsamada iyo inay dardargeliyaan dhexdhexaadnimada kaarboonka iyo isbeddelka caqliga leh.

Noo soo dir emayl

Astaamaha

Xuduudaha farsamada

Wareeji abuurka carbide ee silikoon
Nooc polytype ah	4H
Khalad ku saabsan jihada dusha sare	4° dhanka <11-20>±0.5º
Iska caabin	habayn
Dhexroorka	205±0.5mm
Dhumucda	600±50μm
Qalafsanaan	CMP, Ra≤0.2nm
Cufnaanta Tuubooyinka Yaryar	≤1 e/cm2
Xoqitaan	≤5, Wadarta Dhererka ≤2* Dhexroor
Jajabyada geeska/qoto dheer	Midna ma jiro
Calaamadaynta laysarka hore	Midna ma jiro
Xoqitaan	≤2, Wadarta Dhererka ≤Dhererka
Jajabyada geeska/qoto dheer	Midna ma jiro
Meelaha nooca polytype-ka ah	Midna ma jiro
Calaamadaynta laysarka dambe	1mm (laga bilaabo geeska sare)
Gees	Chamfer
Baakad	Cajalad badan oo wafer ah

Astaamaha Muhiimka ah

1. Qaab-dhismeedka Crystal iyo Waxqabadka Korantada

· Xasiloonida kiristaaliga: 100% 4H-SiC oo ah nooca polytype, eber ku darista multicrystalline (tusaale ahaan, 6H/15R), oo leh qalooca ruxaya XRD oo ballac buuxa leh oo ah nus-ugu badnaan (FWHM) ≤32.7 arcsec.

· Dhaqdhaqaaqa Qaadaha Sare: Dhaqdhaqaaqa elektarooniga ah ee 5,400 cm²/V·s (4H-SiC) iyo dhaqdhaqaaqa godadka oo ah 380 cm²/V·s, taasoo suurtogalinaysa naqshadaha qalabka soo noqnoqda sare.

· Adkaanta Shucaaca: Waxay u adkaysataa shucaaca neutron-ka 1 MeV iyadoo heerka dhaawaca barokaca uu yahay 1 × 10¹⁵ n/cm², oo ku habboon codsiyada hawada sare iyo nukliyeerka.

2. Sifooyinka Kuleylka iyo Farsamada

· Qaboojinta Kulaylka ee Gaarka ah: 4.9 W/cm·K (4H-SiC), saddex jibaaran oo silicon ah, oo taageera hawlgalka ka sarreeya 200°C.

· Isku-darka Ballaarinta Kulaylka Hoose: CTE oo ah 4.0×10⁻⁶/K (25–1000°C), hubinta iswaafajinta baakadaha ku salaysan silikoon iyo yareynta cadaadiska kulaylka.

3. Xakamaynta Cilladaha iyo Saxnaanta Hagaajinta

· Cufnaanta dhuumaha yaryar: <0.3 cm⁻² (8-inji wafers), cufnaanta kala-baxa <1,000 cm⁻² (lagu xaqiijiyay iyada oo loo marayo KOH etching).

· Tayada Dusha Sare: CMP-la safeeyey ilaa Ra <0.2 nm, iyadoo la buuxinayo shuruudaha heerka fidsan ee heerka lithography ee EUV.

Codsiyada Muhiimka ah

Domain-ka	Xaaladaha Codsiga	Faa'iidooyinka Farsamada
Isgaarsiinta Indhaha	100G/400G leysarka, modules isku-dhafan oo silicon photonics ah	Substrates-ka abuurka InP waxay awood u siinayaan farqiga tooska ah (1.34 eV) iyo heteroepitaxy-ga ku salaysan Si, taasoo yaraynaysa luminta isku xidhka indhaha.
Gawaarida Tamarta Cusub	Dareewalada korantada sare ee 800V, kuwa lagu dallaco (OBC)	Substrates-ka 4H-SiC waxay u adkeysan karaan >1,200 V, taasoo yareyneysa khasaaraha gudbinta 50% iyo mugga nidaamka 40%.
Isgaarsiinta 5G	Qalabka RF-ga ee Millimeter-hirka (PA/LNA), kor u qaadayaasha awoodda saldhigga saldhigga	Substrates-ka SiC ee nus-dabool ah (iska caabinta >10⁵ Ω·cm) waxay suurtageliyaan isku-darka dadban ee soo noqnoqda sare (60 GHz+).
Qalabka Warshadaha	Dareemayaasha heerkulka sare, transformers-ka hadda jira, kormeerayaasha fal-galiyaha nukliyeerka	Substrates-ka abuurka InSb (0.17 eV bandgap) waxay bixiyaan xasaasiyad birlab ah ilaa 300% @ 10 T.

Faa'iidooyinka Muhiimka ah

Substrate-ka abuurka ee SiC (silicon carbide) waxay bixiyaan waxqabad aan la barbar dhigi karin oo leh 4.9 W/cm·K oo ah koronto-qaadis kuleyl, xoog 2-4 MV/cm oo burbur ah, iyo 3.2 eV oo ballaaran oo bandgap ah, taasoo suurtogalinaysa codsiyada awoodda sare, soo noqnoqoshada sare, iyo heerkulka sare. Iyagoo leh cufnaan eber ah oo ah tuubooyinka micro iyo cufnaanta kala-baxa <1,000 cm⁻², substrate-yadani waxay hubiyaan isku halaynta xaaladaha daran. Firfircoonidooda kiimikada iyo dusha sare ee la jaan qaadaya CVD (Ra <0.2 nm) waxay taageeraan koritaanka heteroepitaxial ee horumarsan (tusaale ahaan, SiC-on-Si) ee nidaamyada optoelectronics iyo EV.

Adeegyada XKH:

1. Wax soo saar gaar ah

· Qaababka Wafer-ka ee Dabacsan: Wafer-ka 2–12-inji ah oo leh jarjar wareegsan, leydi ah, ama qaab gaar ah (±0.01 mm dulqaad).

· Xakamaynta Daweynta: Daweynta saxda ah ee nitrogen (N) iyo aluminium (Al) iyada oo loo marayo CVD, gaarista iska caabinta waxay u dhaxaysaa 10⁻³ ilaa 10⁶ Ω·cm.

2. Tiknoolajiyada Habraaca Sare;

· Heteroepitaxy: SiC-on-Si (oo la jaanqaadaya khadadka silikoonka 8-inji ah) iyo SiC-on-Diamond (kor u qaadida kulaylka >2,000 W/m·K).

· Yaraynta Cilladaha: Qodista haydarojiin iyo xoqidda si loo yareeyo cilladaha tuubada yar/cufnaanta, iyadoo la hagaajinayo wax soo saarka wafer ilaa >95%.

3. Nidaamyada Maareynta Tayada;

· Tijaabada Dhammaadka-ilaa-Dhamaadka: Raman spectroscopy (xaqiijinta nooca polytype), XRD (crystallinity), iyo SEM (falanqaynta cilladaha).

· Shahaadooyinka: Waafaqsan AEC-Q101 (baabuurta), JEDEC (JEDEC-033), iyo MIL-PRF-38534 (heer militari).

4. Taageerada Silsiladda Sahayda Caalamiga ah;

· Awoodda Wax-soo-saarka: Wax-soo-saarka bishii ka badan 10,000 oo wafer ah (60% 8-inji), oo leh gaarsiin degdeg ah oo 48 saacadood ah.

· Shabakadda Saadka: Daboolida Yurub, Waqooyiga Ameerika, iyo Aasiya-Baasifigga iyada oo loo marayo xamuulka hawada/badda oo leh baakad heerkulku xakamaysan yahay.

5. Horumarinta Iskaashiga Farsamada;

· Shaybaarada R&D ee Wadajirka ah: Iskaashi ku samee hagaajinta baakaynta moduleka awoodda SiC (tusaale ahaan, isku-darka substrate-ka DBC).

· Ruqsadda IP-ga: Bixi shatiga tignoolajiyada kobaca epitaxial ee GaN-on-SiC RF si loo yareeyo kharashyada cilmi-baarista iyo horumarinta macaamiisha.

Soo Koobid

Substrates-ka abuurka ee SiC (silicon carbide), oo ah walxo istiraatiiji ah, ayaa dib u habaynaya silsiladaha warshadaha adduunka iyada oo loo marayo horumarro ku yimaada kobaca kiristaalka, xakamaynta cilladaha, iyo isdhexgalka kala duwan. Iyada oo si joogto ah loo horumarinayo yaraynta cilladaha wafer, kordhinta wax soo saarka 8-inji, iyo ballaarinta goobaha heteroepitaxial (tusaale ahaan, SiC-on-Diamond), XKH waxay bixisaa xalal isku hallayn sare leh, kharash-ool ah oo loogu talagalay optoelectronics, tamar cusub, iyo wax soo saar horumarsan. Ballanqaadkayaga hal-abuurka wuxuu hubinayaa in macaamiishu ay hoggaamiyaan nidaamyada dhexdhexaadka kaarboonka iyo kuwa caqliga leh, iyagoo horseedaya xilliga xiga ee nidaamyada semiconductor-ka ee ballaaran.