Substrates SiC Seed Crystal Dia 205/203/208 Nooca 4H-N ee Isgaarsiinta indhaha

Substrates SiC Seed Crystal Dia 205/203/208 Nooca 4H-N ee Isgaadhsiinta Aragga

Sharaxaad Gaaban:

SiC (silicon carbide) substrates abuurka abuur, sida xudunta u ah qalabka jiilka saddexaad, ka faa'iidaystaan kuleylkooda sare (4.9 W / cm · K), ultra-sare jab xoog beerka (2-4 MV / cm), iyo bandgap ballaaran (3.2 eV) si ay ugu adeegaan sida qalabka aasaasiga ah ee baabuurta optoelectronics, codsiyada tamarta cusub 5G. Iyada oo loo marayo teknoolajiyada wax soo saarka ee horumarsan sida gaadiidka uumiga jirka (PVT) iyo dareeraha epitaxy (LPE), XKH waxay bixiyaan 4H/6H-N-nooca, semi-insulating, iyo 3C-SiC substrates abuurka polytype ee 2-12-inji qaabab wafer, oo leh cufnaanta micropipe ee ka hooseeya 0.3 cm⁻², iska caabin qallafsanaan (Ra) <0.2 nm. Adeegyadayagu waxaa ka mid ah kobaca heteroepitaxial (tusaale, SiC-on-Si), mashiinada saxda ah ee nanoscale (± 0.1 μm dulqaad), iyo gaarsiinta degdegga ah ee caalamiga ah, awoodsiinta macaamiisha si ay uga gudbaan caqabadaha farsamada iyo dardargelinta dhexdhexaadnimada kaarboonka iyo isbeddelka caqliga leh.

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Astaamaha

Xuduudaha farsamada

Silikon carbide wafer
Noocyo badan	4H
Khaladka jihaynta dusha sare	4° dhanka <11-20>±0.5º
iska caabin	habaynta
Dhexroorka	205 ± 0.5mm
Dhumucda	600± 50μm
Qalafsanaan	CMP, Ra≤0.2nm
Cufnaanta Dheef-yar	≤1 ea/cm2
xoqid	≤5, Wadarta Dhererka≤2* Dhexroor
Chips-ka-geeska/indents	Midna
Calaamadaynta laysarka hore	Midna
xoqid	≤2, Wadarta Dhererka≤ Dhexroorka
Chips-ka-geeska/indents	Midna
Aagagga nooca badan	Midna
Calaamadaynta laser-ka dambe	1mm (laga bilaabo cidhifka sare)
Cidhif	Chamfer
Baakadaha	Cajalad badan oo wafer ah

Astaamaha Muhiimka ah

1. Dhismaha Crystal iyo Waxqabadka Korontada

Xasiloonida Crystallographic: 100% 4H-SiC xukunka nooca badan, eber ka mid ahaanshaha multicrystalline (tusaale, 6H/15R), oo leh XRD ruxitaanka qalooca oo dhan ballac badhkii (FWHM) ≤32.7 arcsec.

Dhaqdhaqaaqa Qaade Sare: Dhaqdhaqaaqa korantada ee 5,400 cm²/V·s (4H-SiC) iyo socodka dalool ee 380 cm²/V·s, taas oo awood u siinaysa naqshadaynta aaladaha soo noqnoqda.

Qallafsanaanta Shucaaca: Waxay u adkaysataa 1 MeV neutron irradiation oo leh heerka dhaawaca barokaca ee 1 × 10¹⁵ n/cm², ku habboon hawada hawada iyo codsiyada nukliyeerka.

2. Guryaha kulaylka iyo Makaanikada

Habdhaqanka kulaylka ee aan caadiga ahayn: 4.9 W/cm · K (4H-SiC), saddex jibaarma silikoon, hawlgalka taageeraya ee ka sarreeya 200°C.

Iskuxidhka Balaadhinta kulaylka Hoose: CTE ee 4.0×10⁻⁶/K (25–1000°C), hubinta in ay waafaqsan yihiin baakadaha silikoon-ku-salaysan iyo yaraynta diiqada kulaylka.

3. Xakamaynta iyo habaynta saxnaanta

Cufnaanta tuubbooyinka yar yar: <0.3 cm⁻² (8-inch wafers), cufnaanta kala-baxa <1,000 cm⁻² (lagu xaqiijiyay KOH etching).

Tayada dusha sare: CMP-oo la safeeyey ilaa Ra <0.2 nm, oo buuxinaysa shuruudaha siman ee darajada lithography ee EUV.

Codsiyada Muhiimka ah

Domain	Dhacdooyinka Codsiga	Faa'iidooyinka Farsamada
Isgaarsiinta indhaha	100G/400G leysarka, Silicon photonics modules hybrid	Substrates abuurka InP waxay awood u siinaysaa bandheynta tooska ah (1.34 eV) iyo heteroepitaxy-ku-salaysan, taasoo yaraynaysa khasaaraha isku xidhka indhaha.
Baabuurta Tamarta Cusub	800V rogayaasha korantada sare leh, dabaysha dusha saaran (OBC)	4H-SiC substrates waxay u adkeysanayaan> 1,200 V, hoos u dhigista khasaaraha socodka 50% iyo mugga nidaamka 40%.
Isgaarsiinta 5G	Aaladaha RF millimeter-mowjadaha (PA/LNA), cod-weyneyaasha saldhigga saldhigga	Substrates-ka-soo-jiidashada SiC (iska-caabbinta>10⁵ Ω·cm) waxay awood u siinaysaa soo noqnoqoshada sare (60 GHz+) is-dhexgalka dadban.
Qalabka Warshadaha	Dareemayaal heerkul sare leh, Transformers hadda, kormeerayaasha reactor nuclear	Substrates abuurka InSb (0.17 eV bandgap) waxay keenaan dareenka magnetka ilaa 300%@10 T.

Faa'iidooyinka Muhiimka ah

SiC (silicon carbide) substrates abuurka abuurku waxay bixiyaan waxqabad aan la mid ahayn oo leh 4.9 W / cm · K kuleylka kuleylka, 2-4 MV / cm burburka xoogga beerta, iyo 3.2 eV bandgap ballaaran, awood sare leh, soo noqnoqoshada sare, iyo codsiyada heerkulka sare. Muujinaya cufnaanta micropipe eber iyo <1,000 cm⁻² cufnaanta kala-baxa, substrate-yadani waxay xaqiijinayaan isku halaynta xaaladaha daran. Jidh la'aantooda kiimikaad iyo sagxadaha CVD-ku-xiran (Ra <0.2 nm) waxay taageeraan korriinka heteroepitaxial horumarsan (tusaale, SiC-on-Si) ee optoelectronics iyo nidaamyada korantada EV.

Adeegyada XKH:

1. Wax-soo-saarka gaarka ah

Foomamka Waferka Dabacsan: 2–12-inji maraqa oo googooyo wareeg ah, leydi ah, ama qaab gaar ah u samaysan (±0.01 mm dulqaad).

Xakamaynta doping: Nayroojiin sax ah (N) iyo aluminium (Al) doping oo la sii marinayo CVD, gaarista iska caabintu waxay u dhaxaysaa 10⁻³ ilaa 10⁶ Ω·cm.

2. Tiknoolajiyada Geedi socodka Horukacsan;

Heteroepitaxy: SiC-on-Si (ku habboon 8-inji khadadka silikon) iyo SiC-on-Diamond (kuleylka kuleylka> 2,000 W/m·K).

Yaraynta cilladda: Etching Hydrogen-ka iyo soo-jiidashada si loo yareeyo cilladaha micropipe/cufnaanta, hagaajinta wax-soo-saarka wafer ilaa> 95%.

3. Nidaamyada Maareynta Tayada;

Tijaabada dhamaadka-ilaa-dhamaadka: Raman spectroscopy (xaqiijinta polytype), XRD (crystallinity), iyo SEM (falanqaynta cilladda).

Shahaadooyinka: U hoggaansan AEC-Q101 (baabuur), JEDEC (JEDEC-033), iyo MIL-PRF-38534 ( darajo-militari).

4. Taageerada Silsilada Supply Global;

Awoodda Wax-soo-saarka: Wax-soo-saarka bishii> 10,000 wafers (60% 8-inch), oo leh 48-saac oo degdeg ah.

Shabakadda Saadka: Daboolista Yurub, Waqooyiga Ameerika, iyo Aasiya-Pacific iyada oo loo marayo xamuulka hawada/badeedka oo leh baakado heerkulku kantaroolo.

5. Horumarinta Farsamada;

Shaybaadhada R&D ee Wadajirka ah: Ka wada-shaqeyn tayaynta baakadaha awoodda SiC moduleka (tusaale, isdhexgalka substrate DBC).

Shatiga IP: Bixi GaN-on-SiC RF shatiga kobaca tignoolajiyada epitaxial si loo yareeyo kharashaadka R&D macmiilka.

Soo koobid

SiC (silikon carbide) substrates crystal abuurka, sida walxo istiraatijiyadeed, waxay dib u qaabaynaysaa silsiladaha warshadaha caalamiga ah iyada oo loo marayo horumarada koritaanka crystal, xakamaynta cilladda, iyo isdhexgalka kala duwan. Iyada oo si joogto ah loo horumarinayo dhimista cilladaha wafer-ka, cabirka wax-soo-saarka 8-inch, iyo ballaarinta aaladaha heteroepitaxial (tusaale, SiC-on-Diamond), XKH waxay soo bandhigtaa isku halleyn sare, xalal wax ku ool ah oo loogu talagalay optoelectronics, tamar cusub, iyo wax soo saar horumarsan. Ballanqaadkayaga hal-abuurnimadu waxay hubisaa in macaamiishu horseed u noqdaan dhexdhexaadnimada kaarboon iyo nidaamyada garaadka, wadista xilliga soo socda ee nidaamyada deegaanka semiconductor-ballaaran.