Wafers Epitaxial ah oo GaN-on-SiC ah oo loo habeeyey (100mm, 150mm) – Xulashooyinka Substrate-ka SiC ee Badan (4H-N, HPSI, 4H/6H-P)

Wafers Epitaxial ah oo GaN-on-SiC ah oo loo habeeyey (100mm, 150mm) – Ikhtiyaarada Substrate-ka SiC ee Badan (4H-N, HPSI, 4H/6H-P) Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Wafers-keena GaN-on-SiC Epitaxial Wafers-ka ah ee loo habeeyey waxay bixiyaan waxqabad heer sare ah oo loogu talagalay codsiyada awoodda sare leh, ee soo noqnoqda sare leh iyagoo isku daraya sifooyinka gaarka ah ee Gallium Nitride (GaN) oo leh kulaylka xooggan iyo xoogga farsamada eeSilikoon Karbohaydrayt (SiC). Waxaa laga heli karaa cabbirrada wafer-ka 100mm iyo 150mm, wafer-yadan waxaa lagu dhisay noocyo kala duwan oo ah xulashooyinka substrate-ka SiC, oo ay ku jiraan noocyada 4H-N, HPSI, iyo 4H/6H-P, oo loogu talagalay inay buuxiyaan shuruudaha gaarka ah ee elektaroonigga korontada, amplifiers-ka RF, iyo aaladaha kale ee semiconductor-ka ee horumarsan. Iyada oo la adeegsanayo lakabyada epitaxial ee la beddeli karo iyo substrate-yada SiC ee gaarka ah, wafer-yadayada waxaa loogu talagalay inay hubiyaan hufnaan sare, maaraynta kulaylka, iyo isku halaynta codsiyada warshadaha ee adag.

Noo soo dir emayl

Astaamaha

● Dhumucda Lakabka Epitaxial: Laga beddeli karo1.0 µmku socota3.5 µm, oo loo habeeyay waxqabadka awoodda sare iyo soo noqnoqoshada.

● Xulashooyinka Substrate-ka SiC: Waxaa laga heli karaa substrates kala duwan oo SiC ah, oo ay ku jiraan:

4H-N: 4H-SiC oo tayo sare leh oo lagu dahaadhay Nitrogen-ka loogu talagalay codsiyada soo noqnoqda sare leh ee awoodda sare leh.
HPSI: SiC-ga Nadiifka Sare leh ee Semi-dahaarka leh ee loogu talagalay codsiyada u baahan go'doomin koronto.
4H/6H-P: Isku-dhafan 4H iyo 6H-SiC si loo helo dheelitirnaan hufnaan sare iyo isku hallayn.

● Cabbirrada Wafer-ka: Waxaa laga heli karaa100mmiyo150mmdhexroorro loogu talagalay kala duwanaansho ku saabsan cabbirka iyo is-dhexgalka qalabka.

● Danab Jaban oo SareGaN oo ku taal teknoolojiyadda SiC waxay bixisaa danab jab sare leh, taasoo awood u siinaysa waxqabad xooggan codsiyada awoodda sare leh.

● Qaboojinta Kulaylka Sare: Qaboojinta kulaylka ee SiC (qiyaastii 490 W/m·K) waxay hubisaa kala-baxa kulaylka oo aad u fiican codsiyada awoodda badan leh.

Tilmaamaha Farsamada

Halbeegga	Qiimaha
Dhexroorka Wafer	100mm, 150mm
Dhumucda Lakabka Epitaxial	1.0 µm – 3.5 µm (la habeyn karo)
Noocyada Substrate-ka SiC	4H-N, HPSI, 4H/6H-P
Hab-dhaqanka Kulaylka ee SiC	490 W/m·K
Iska caabbinta SiC	4H-N: 10^6 Ω·cm,HPSI: Badh-daboolid,4H/6H-P: Isku-dhafan 4H/6H
Dhumucda Lakabka GaN	1.0 µm – 2.0 µm
Ururinta GaN Carrier	10^18 cm^-3 ilaa 10^19 cm^-3 (la habeyn karo)
Tayada Dusha Sare ee Wafer	RMS Qalafsanaanta: < 1 nm
Cufnaanta Kala-baxa	< 1 x 10^6 cm^-2
Qaanso Wafer ah	< 50 µm
Fidsanaanta Wafer	< 5 µm
Heerkulka Hawlgalka Ugu Badan	400°C (sida caadiga ah ee aaladaha GaN-on-SiC)

Codsiyada

● Elektarooniga Korontada:Wafer-yada GaN-on-SiC waxay bixiyaan hufnaan sare iyo kala-baxa kulaylka, taasoo ka dhigaysa kuwo ku habboon amplifiers-ka korontada, aaladaha beddelka awoodda, iyo wareegyada power-inverter-ka ee loo isticmaalo baabuurta korontada ku shaqeeya, nidaamyada tamarta la cusboonaysiin karo, iyo mashiinnada warshadaha.
● Qalab-sameeyayaasha Awoodda RF:Isku-darka GaN iyo SiC waa mid ku habboon codsiyada RF ee soo noqnoqda sare leh, kuwa awoodda sare leh sida isgaarsiinta, isgaarsiinta dayax-gacmeedka, iyo nidaamyada radar.
●Hawada Sare iyo Difaaca:Wafer-yadani waxay ku habboon yihiin teknoolojiyada hawada sare iyo difaaca ee u baahan elektaroonigga awoodda sare leh iyo nidaamyada isgaarsiinta kuwaas oo ku shaqayn kara xaalado adag.
● Codsiyada Gawaarida:Ku habboon nidaamyada korontada ee waxqabadka sare leh ee baabuurta korontada ku shaqeeya (EVs), baabuurta isku-dhafan (HEVs), iyo saldhigyada dallacaadda, taasoo suurtogalinaysa beddelka iyo xakamaynta korontada oo hufan.
● Nidaamyada Milatariga iyo Raadaarka:Wafer-yada GaN-on-SiC waxaa loo isticmaalaa nidaamyada radar-ka si ay u helaan hufnaan sare, awooddooda maaraynta awoodda, iyo waxqabadka kulaylka ee deegaannada baahida badan leh.
● Codsiyada Microwave-ka iyo Millimeter-Mowjadaha:Nidaamyada isgaarsiinta ee jiilka soo socda, oo ay ku jiraan 5G, GaN-on-SiC waxay bixisaa waxqabad wanaagsan oo ku jira heerarka microwave-ka awoodda sare leh iyo hirarka milimitir-ka.

S&J

S1: Waa maxay faa'iidooyinka isticmaalka SiC oo ah substrate loogu talagalay GaN?

A1:Silicon Carbide (SiC) waxay bixisaa koronto-qaadis heer sare ah, danab jabitaan sare, iyo xoog farsamo marka la barbar dhigo substrates-ka dhaqameed sida silicon. Tani waxay ka dhigaysaa wafer-yada GaN-on-SiC kuwo ku habboon codsiyada awoodda sare, soo noqnoqoshada sare, iyo heerkulka sare. Substrate-ka SiC wuxuu ka caawiyaa kala-baxa kulaylka ay soo saaraan aaladaha GaN, isagoo hagaajinaya isku halaynta iyo waxqabadka.

S2: Dhumucda lakabka epitaxial ma loo habeyn karaa codsiyada gaarka ah?

A2:Haa, dhumucda lakabka epitaxial waxaa loo habeyn karaa noocyo kala duwan1.0 µm ilaa 3.5 µm, iyadoo ku xiran shuruudaha awoodda iyo soo noqnoqoshada ee codsigaaga. Waxaan u habeyn karnaa dhumucda lakabka GaN si aan u hagaajino waxqabadka aaladaha gaarka ah sida cod-weyneeyayaasha awoodda, nidaamyada RF, ama wareegyada soo noqnoqda sare.

S3: Waa maxay faraqa u dhexeeya substrates-ka 4H-N, HPSI, iyo 4H/6H-P SiC?

A3:

4H-N: 4H-SiC oo lagu dahaadhay Nitrogen-ka ayaa badanaa loo isticmaalaa codsiyada soo noqnoqda ee u baahan waxqabadka elektaroonigga ah ee sare.
HPSI: SiC-ga Nadiifka Sare leh ee Semi-insulating wuxuu bixiyaa go'doomin koronto, oo ku habboon codsiyada u baahan koronto-qaadis yar.
4H/6H-P: Isku-darka 4H iyo 6H-SiC oo dheellitira waxqabadka, oo bixiya isku-darka hufnaan sare iyo adkeysi, oo ku habboon codsiyada kala duwan ee elektaroonigga korontada.

S4: Ma kuwan GaN-on-SiC ah ayaa ku habboon codsiyada awoodda sare leh sida baabuurta korontada iyo tamarta la cusboonaysiin karo?

A4:Haa, GaN-on-SiC wafers-ku waxay si fiican ugu habboon yihiin codsiyada tamarta sare leh sida gawaarida korontada, tamarta la cusboonaysiin karo, iyo nidaamyada warshadaha. Danabka burburka sare, kulaylka sare ee kulaylka, iyo awoodaha maaraynta awoodda ee aaladaha GaN-on-SiC waxay awood u siinayaan inay si wax ku ool ah u qabtaan wareegyada beddelka korontada iyo xakamaynta.

S5: Waa maxay cufnaanta kala-baxa caadiga ah ee buskudyadan?

A5:Cufnaanta kala-baxa ee wafer-yadan GaN-on-SiC badanaa waa< 1 x 10^6 cm^-2, kaas oo hubiya koritaanka epitaxial tayo sare leh, yaraynta cilladaha iyo hagaajinta waxqabadka qalabka iyo isku halaynta.

S6: Ma codsan karaa cabbir wafer gaar ah ama nooc substrate SiC ah?

A6:Haa, waxaan bixinaa cabbirro wafer ah oo loo habeeyay (100mm iyo 150mm) iyo noocyada substrate-ka SiC (4H-N, HPSI, 4H/6H-P) si loo daboolo baahiyaha gaarka ah ee codsigaaga. Fadlan nala soo xiriir si aad u hesho ikhtiyaarro dheeraad ah oo lagu habeyn karo iyo si aad ugala hadasho baahiyahaaga.

S7: Sidee bay u shaqeeyaan wafer-yada GaN-on-SiC jawi aad u daran?

A7:Waferada GaN-on-SiC waxay ku habboon yihiin deegaannada aadka u daran sababtoo ah xasilloonidooda kulaylka sare, maaraynta awoodda sare, iyo awoodaha kala firdhinta kulaylka oo aad u fiican. Waferadani waxay si fiican u shaqeeyaan xaaladaha heerkulka sare, awoodda sare, iyo kuwa soo noqnoqda ee badanaa lagu arko hawada sare, difaaca, iyo codsiyada warshadaha.

Gunaanad

Wafers-keena GaN-on-SiC ee loo habeeyey waxay isku daraan sifooyinka horumarsan ee GaN iyo SiC si ay u bixiyaan waxqabad sare oo ku saabsan codsiyada awoodda sare iyo kuwa soo noqnoqda sare leh. Iyada oo leh ikhtiyaarro badan oo substrate SiC ah iyo lakabyo epitaxial ah oo la beddeli karo, wafers-yadani waxay ku habboon yihiin warshadaha u baahan hufnaan sare, maaraynta kulaylka, iyo isku halaynta. Hadday tahay qalabka elektaroonigga korontada, nidaamyada RF, ama codsiyada difaaca, wafers-keena GaN-on-SiC waxay bixiyaan waxqabadka iyo dabacsanaanta aad u baahan tahay.