GaN-on-SiC Epitaxial Wafers La Habeeyay (100mm, 150mm) - Xulashooyinka Substrate SiC ee Badan (4H-N, HPSI, 4H/6H-P)

GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Xulashooyinka Substrate SiC ee Badan (4H-N, HPSI, 4H/6H-P) Sawirka

Sharaxaad Gaaban:

GaN-on-SiC Epitaxial Wafers-yadayada loo habeeyey waxay bixiyaan waxqabad heersare ah oo loogu talagalay codsiyada awoodda sare leh, soo noqnoqda sare iyadoo la isku darayo sifooyinka gaarka ah ee Gallium Nitride (GaN) oo leh dhaqdhaqaaqa kulaylka adag iyo xoogga farsamadaSilicon Carbide (SiC). Waxaa lagu heli karaa 100mm iyo 150mm cabbirrada wafer, waferradan waxaa lagu dhisay noocyo kala duwan oo ikhtiyaari ah oo SiC ah, oo ay ku jiraan 4H-N, HPSI, iyo 4H/6H-P, oo loogu talagalay inay buuxiyaan shuruudaha gaarka ah ee korantada korantada, amplifiers RF, iyo aaladaha kale ee semiconductor ee horumarsan. Iyada oo leh lakabyo epitaxial ah oo la beddeli karo iyo substrates SiC gaar ah, waferradayada waxaa loogu talagalay in lagu hubiyo waxtarka sare, maaraynta kulaylka, iyo isku halaynta dalabaadka codsiyada warshadaha.

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Astaamaha

Dhumucda lakabka Epitaxial: laga beddeli karo1.0 µmku3.5µm, loogu hagaajiyay awoodda sare iyo waxqabadka soo noqnoqda.

●SiC Substrate Options: Waxaa lagu heli karaa substrates SiC oo kala duwan, oo ay ku jiraan:

4H-N: Nitrogen-doped 4H-SiC oo tayo sare leh oo loogu talagalay soo noqnoqoshada sare, codsiyada awoodda sare leh.
HPSISiC Semi-Insulating High-Purity ee codsiyada u baahan go'doomin koronto.
4H/6H-P: Isku-dhafka 4H iyo 6H-SiC si loogu dheelitiro waxtarka sare iyo kalsoonida.

●Xajmiga Waferka: Laga heli karo gudaha100mmiyo150mmdhexroorka kala duwanaanshaha qalabka iyo isku dhafka.

●Korantada Burburka Sare: GaN ee tignoolajiyada SiC waxay bixisaa danab burbursan oo sarreeya, taasoo awood u siinaysa waxqabadka adag ee codsiyada awoodda sare leh.

● Dhaqdhaqaaqa kulaylka sare: SiC's kulaylka dabeecadda (qiyaastii 490 W/m·K) waxay hubisaa kala daadinta kulaylka aadka u fiican ee codsiyada xoogga leh.

Tilmaamaha Farsamada

Halbeegga	Qiimaha
Dhexroorka Wafer	100mm, 150mm
Dhumucda lakabka Epitaxial	1.0 µm - 3.5 µm (la beddeli karo)
Noocyada SiC Substrate	4H-N, HPSI, 4H/6H-P
Habdhaqanka Kulaylka ee SiC	490 W/m·K
Iska caabinta SiC	4H-N: 10^6 Ω·cm,HPSI: Semi-insulating,4H/6H-P: Isku qasan 4H/6H
Dhumucda lakabka GaN	1.0 µm - 2.0 µm
Gaadhida GaN	10^18 cm^-3 ilaa 10^19 cm^-3 (la beddeli karo)
Wafer Tayada Dusha sare	Qalafsanaanta RMS: < 1 nm
Cufnaanta Kala-baxa	<1 x 10^6 cm^-2
Qaansada wafer	< 50 µm
Wafer Flatness	<5 µm
Heerkulka shaqada ee ugu badan	400°C (caadi u ah aaladaha GaN-on-SiC)

Codsiyada

●Awoodda Elektarooniga ah:Waferrada GaN-on-SiC waxay bixiyaan hufnaan sare iyo kuleylka kuleylka, taasoo ka dhigaysa kuwa ku habboon cod-weyneyayaasha, aaladaha beddelka awoodda, iyo wareegyada korantada ee loo isticmaalo gawaarida korantada, nidaamyada tamarta la cusboonaysiin karo, iyo mashiinnada warshadaha.
● Cod-weyneyaasha Korantada RF:Isku darka GaN iyo SiC waxay ku fiican yihiin soo noqnoqoshada sare, codsiyada RF ee awoodda sare leh sida isgaarsiinta, isgaarsiinta satellite-ka, iyo nidaamyada radar.
● Hawada iyo Difaaca:Waferradani waxay ku habboon yihiin hawada hawada iyo tignoolajiyada difaaca ee u baahan qalabka elektiroonigga ah ee awoodda wax-qabadka sare leh iyo nidaamyada isgaarsiinta ee ku shaqeyn kara xaalado adag.
Codsiyada baabuurta:Ku habboon nidaamyada awoodda wax-qabadka sare leh ee baabuurta korantada (EVs), baabuurta isku-dhafka ah (HEVs), iyo saldhigyada dallaca, taas oo awood u siinaysa beddelka iyo xakamaynta awoodda hufan.
●Ciidamada iyo Nidaamyada Raadaarka:Waferrada GaN-on-SiC waxaa loo adeegsadaa nidaamyada raadaarka waxtarkooda sare, awoodooda maaraynta awoodda, iyo waxqabadka kulaylka ee jawiyada baahida badan.
Codsiyada Mawjada Microwave iyo Millimeter-Mowjadda:Nidaamyada isgaarsiinta jiilka soo socda, oo ay ku jiraan 5G, GaN-on-SiC waxay bixisaa waxqabadka ugu fiican ee mikrowaytka awoodda sare leh iyo kala duwanaanta hirarka millimitirka.

Q&A

Q1: Waa maxay faa'iidooyinka isticmaalka SiC sida substrate ee GaN?

A1:Silicon Carbide (SiC) waxay bixisaa kuleyl heer sare ah, danab burbursan oo sarreeya, iyo xoog farsamo marka la barbar dhigo substrate-dhaqameedyada sida silikoon. Tani waxay ka dhigaysaa waferrada GaN-on-SiC mid ku habboon codsiyada tamarta sare, soo noqnoqoshada sare, iyo heerkulka sare. Substrate-ka SiC wuxuu caawiyaa kala daadinta kulaylka ay dhaliyaan aaladaha GaN, hagaajinta isku halaynta iyo waxqabadka.

Q2: Dhumucda lakabka epitaxial ma loo habeyn karaa codsiyada gaarka ah?

A2:Haa, dhumucda lakabka epitaxial waxaa lagu beddeli karaa tiro kala duwan1.0 µm ilaa 3.5 µm, iyada oo ku xidhan hadba awooda iyo inta jeer ee loo baahan yahay codsigaga. Waxaan u habeyn karnaa dhumucda lakabka GaN si aan u wanaajino waxqabadka aaladaha gaarka ah sida cod-weyneyayaasha, nidaamyada RF, ama wareegyada soo noqnoqda sare.

Q3: Waa maxay faraqa u dhexeeya 4H-N, HPSI, iyo 4H/6H-P SiC substrates?

A3:

4H-N: Nitrogen-doped 4H-SiC waxaa badanaa loo isticmaalaa codsiyada soo noqnoqda ee u baahan waxqabadka sare ee elektiroonigga ah.
HPSISemi-Insulating High-Purity SiC waxay bixisaa go'doomin koronto, oo ku habboon codsiyada u baahan korantada ugu yar.
4H/6H-P: Isku dhafka 4H iyo 6H-SiC oo dheellitiran waxqabadka, oo bixiya isku-darka waxtarka sare iyo adkeynta, oo ku habboon codsiyada kala duwan ee korontada.

Q4: Waferradan GaN-on-SiC ma ku habboon yihiin codsiyada awoodda sare leh sida baabuurta korontada iyo tamarta la cusboonaysiin karo?

A4:Haa, waferrada GaN-on-SiC waxay si fiican ugu habboon yihiin codsiyada awooda sare leh sida baabuurta korantada, tamarta la cusboonaysiin karo, iyo nidaamyada warshadaha. Korontada burbursan ee sare, korantada kulaylka sare, iyo awoodaha maaraynta awooda aaladaha GaN-on-SiC waxay u saamaxdaa inay si wax ku ool ah u qabtaan dalabka beddelka awoodda iyo xakamaynta wareegyada.

Q5: Waa maxay cufnaanta kala-baxa caadiga ah ee waferradan?

A5:Cufnaanta kala-baxa ee waferradan GaN-on-SiC waa caadi<1 x 10^6 cm^-2, kaas oo hubinaya kobaca epitaxial-tayada sare leh, yaraynta cilladaha iyo hagaajinta waxqabadka qalabka iyo kalsoonida.

Q6: Miyaan codsan karaa cabbirka wafer gaar ah ama nooca substrate SiC?

A6:Haa, waxaan bixinaa cabbirrada waferka la habeeyey (100mm iyo 150mm) iyo noocyada substrate SiC (4H-N, HPSI, 4H/6H-P) si loo daboolo baahiyaha gaarka ah ee codsigaaga. Fadlan nala soo xidhiidh si aad u hesho doorashooyin dheeraad ah oo habaynta iyo si aad ugala hadasho shuruudahaaga.

Q7: Sidee bay waferrada GaN-on-SiC u qabtaan deegaan aad u daran?

A7:Waferrada GaN-on-SiC waxay ku fiican yihiin bay'ada aadka u daran sababtoo ah degenaanshahooda kulaylka sare, maaraynta awooda sare, iyo awooda kulaylka aad u fiican. Wafers-yadani waxay si fiican ugu shaqeeyaan heerkulka sare, awoodda sare, iyo xaaladaha soo noqnoqda ee caadi ahaan la kulma hawada hawada, difaaca, iyo codsiyada warshadaha.

Gabagabo

GaN-on-SiC Epitaxial Wafers-kayaga la habeeyey waxay isku daraan sifooyinka sare ee GaN iyo SiC si ay u bixiyaan waxqabad heersare ah oo awood sare leh iyo codsiyada soo noqnoqda. Iyada oo leh xulashooyin badan oo kala duwan oo SiC ah iyo lakabyada epitaxial ee la beddeli karo, waferradani waxay ku habboon yihiin warshadaha u baahan waxtar sare, maaraynta kulaylka, iyo isku halaynta. Haddi loo isticmaalo korantada elektiroonigga ah, nidaamyada RF, ama codsiyada difaaca, waferradayada GaN-on-SiC waxay bixiyaan waxqabadka iyo dabacsanaanta aad u baahan tahay.