Nooca N ee gaarka ah ee Substrate-ka SiC ee Dia153/155mm ee Elektarooniga Korontada

Sharaxaad Gaaban:

Substrates-ka abuurka Silicon Carbide (SiC) waxay u adeegaan sidii agabka aasaasiga ah ee semiconductors-ka jiilka saddexaad, oo lagu kala saaro kulaylka aadka u sarreeya, xoogga goobta korontada ee burburka sare leh, iyo dhaqdhaqaaqa elektarooniga oo sarreeya. Sifooyinkani waxay ka dhigayaan kuwo aan lagama maarmaan u ah elektarooniga korontada, aaladaha RF, gawaarida korontada (EVs), iyo codsiyada tamarta la cusboonaysiin karo. XKH waxay ku takhasustay cilmi-baarista iyo horumarinta iyo soo saarista substrates-ka abuurka SiC ee tayada sare leh, iyadoo adeegsanaysa farsamooyinka koritaanka kiristaalka ee horumarsan sida Gaadiidka Uumiga Jirka (PVT) iyo Kaydinta Uumiga Kiimikada Heerkulka Sare (HTCVD) si loo hubiyo tayada kiristaalka ee hormuudka ka ah warshadaha.

Noo soo dir emayl

Astaamaha

Soo bandhig

XKH waxay bixisaa abuurka SiC ee 4-inch, 6-inch, iyo 8-inch ah oo leh dawaynta nooca N-nooca/P ee la beddeli karo, iyagoo gaaraya heerarka iska caabinta ee 0.01-0.1 Ω·cm iyo cufnaanta kala-baxa ee ka hooseeya 500 cm⁻², taasoo ka dhigaysa kuwo ku habboon soo saarista MOSFET-yada, Schottky Barrier Diodes (SBDs), iyo IGBT-yada. Habka wax soo saarka ee isku dhafan ee isku dhafan wuxuu daboolayaa koritaanka kiristaalka, jarista wafer-ka, nadiifinta, iyo kormeerka, iyadoo awood wax soo saar bille ah ay ka badan tahay 5,000 wafer si loo daboolo baahiyaha kala duwan ee hay'adaha cilmi-baarista, soosaarayaasha semiconductor-ka, iyo shirkadaha tamarta la cusboonaysiin karo.

Intaa waxaa dheer, waxaan bixinaa xalal gaar ah, oo ay ku jiraan:

Habaynta jiheynta kiristaalka (4H-SiC, 6H-SiC)

Daawooyinka gaarka ah (Aluminium, Nitrogen, Boron, iwm.)

Nadiifin aad u siman (Ra < 0.5 nm)

XKH waxay taageertaa habaynta ku salaysan muunadda, la-tashiyada farsamada, iyo qaab-dhismeedka yar-yar si loo bixiyo xalalka substrate-ka SiC ee la hagaajiyay.

Xuduudaha farsamada

Wareeji abuurka carbide ee silikoon
Nooc polytype ah	4H
Khalad ku saabsan jihada dusha sare	4° dhanka <11-20>±0.5º
Iska caabin	habayn
Dhexroorka	205±0.5mm
Dhumucda	600±50μm
Qalafsanaan	CMP, Ra≤0.2nm
Cufnaanta Tuubooyinka Yaryar	≤1 e/cm2
Xoqitaan	≤5, Wadarta Dhererka ≤2* Dhexroor
Jajabyada geeska/qoto dheer	Midna ma jiro
Calaamadaynta laysarka hore	Midna ma jiro
Xoqitaan	≤2, Wadarta Dhererka ≤Dhererka
Jajabyada geeska/qoto dheer	Midna ma jiro
Meelaha nooca polytype-ka ah	Midna ma jiro
Calaamadaynta laysarka dambe	1mm (laga bilaabo geeska sare)
Gees	Chamfer
Baakad	Cajalad badan oo wafer ah

Substrates-ka Abuurka SiC - Astaamaha Muhiimka ah

1. Sifooyinka Jireed ee Gaarka ah

· Daawaynta kulaylka oo sareysa (~490 W/m·K), oo si weyn uga sarreysa silicon (Si) iyo gallium arsenide (GaAs), taasoo ka dhigaysa mid ku habboon qaboojinta qalabka cufnaanta awoodda sare leh.

· Xoogga goobta burburka (~3 MV/cm), taasoo suurtogalinaysa hawlgal xasilloon marka la eego xaaladaha danab sare, oo muhiim u ah EV-ga iyo modules-ka awoodda warshadaha.

· Kala-goyn ballaaran (3.2 eV), yaraynta qulqulka daadashada heerkulka sare iyo hagaajinta isku halaynta qalabka.

2. Tayada Crystalline Sare

· Tiknoolajiyada koritaanka isku-dhafka ah ee PVT + HTCVD waxay yareysaa cilladaha tuubooyinka yaryar, iyadoo ilaalineysa cufnaanta kala-baxa ee ka hooseeya 500 cm⁻².

· Qaanso/wareejin < 10 μm iyo qallafsanaanta dusha sare Ra < 0.5 nm, hubinta iswaafajinta lithography-ga saxsan iyo hababka dhigista filimka khafiifka ah.

3. Xulashooyinka Doping-ka ee Kala Duwan

·N-nooca (Nitrogen-ku-daweeyay): Iska caabin hoose (0.01-0.02 Ω·cm), oo loogu talagalay aaladaha RF-ga ee soo noqnoqda sare leh.

· Nooca P (Aluminium-ku-daray): Ku habboon MOSFET-yada awoodda leh iyo IGBT-yada, taasoo hagaajinaysa dhaqdhaqaaqa side-qaadaha.

· SiC-ga nus-daboolaya (Vanadium-ku-daboolay): Iska caabin > 10⁵ Ω·cm, oo loogu talagalay qaybaha hore ee 5G RF.

4. Xasiloonida Deegaanka

· Iska caabin heer-kul sare (>1600°C) iyo adkaanta shucaaca, oo ku habboon hawada sare, qalabka nukliyeerka, iyo deegaanno kale oo aad u daran.

Substrates-ka Abuurka SiC - Codsiyada Aasaasiga ah

1. Elektarooniga Korontada

· Gawaarida Korontada (EVs): Waxaa loo isticmaalaa dallacayaasha saaran (OBC) iyo kuwa rogrogaya si loo hagaajiyo hufnaanta loona yareeyo baahida maaraynta kulaylka.

· Nidaamyada Korontada Warshadaha: Waxay kor u qaadaysaa inverters-ka sawir-qaadista iyo shabakadaha casriga ah, iyadoo la gaarayo hufnaan beddelka korontada oo ka badan 99%.

2. Qalabka RF

· Saldhigyada Saldhigga 5G: Substrates-ka SiC ee nus-daboolaya waxay awood u siinayaan amplifiers-ka awoodda GaN-on-SiC RF, iyagoo taageeraya gudbinta calaamadaha awoodda sare leh.

Isgaarsiinta Dayax-gacmeedka: Astaamaha khasaaraha yar ayaa ka dhigaya mid ku habboon aaladaha hirarka milimitir-ka.

3. Kaydinta Tamarta iyo Tamarta La Cusboonaysiin Karo

· Tamarta Qorraxda: SiC MOSFETs waxay kor u qaadaan hufnaanta beddelka DC-AC iyadoo la dhimayo kharashyada nidaamka.

· Nidaamyada Kaydinta Tamarta (ESS): Waxay wanaajisaa beddelayaasha laba-jiho leh waxayna kordhisaa cimriga batteriga.

4. Difaaca iyo Hawada Sare

· Nidaamyada Radar: Aaladaha SiC ee awoodda sare leh waxaa loo isticmaalaa radar-yada AESA (Active Elektrooni ahaan loo Iskaan gareeyay Array).

· Maareynta Awoodda Hawada Sare: Substrates-ka SiC ee u adkaysta shucaaca ayaa muhiim u ah hawlgallada hawada sare ee qotoda dheer.

5. Cilmi-baarista & Teknolojiyada Soo Kordhaysa

· Xisaabinta Quantum: SiC-ga saafiga ah wuxuu suurtogal ka dhigayaa cilmi-baarista qubit-ka wareegga.

· Dareemayaasha Heerkulka Sare: Waxaa loo adeegsadaa sahaminta saliidda iyo la socodka fal-galayaasha nukliyeerka.

Substrates-ka SiC ee Abuurka - Adeegyada XKH

1. Faa'iidooyinka Silsiladda Sahayda

· Wax soo saar si toosan isugu dhafan: Xakamaynta buuxda laga bilaabo budada SiC ee saafiga ah ilaa buskudka la dhammeeyey, iyadoo la hubinayo waqtiyada hogaanka ee 4-6 toddobaad ee alaabada caadiga ah.

· Tartanka kharashka: Dhaqaalaha baaxadda leh wuxuu suurtogal ka dhigayaa 15-20% qiimo ka hooseeya kuwa tartamaya, iyadoo la taageerayo Heshiisyada Muddada Dheer (LTAs).

2. Adeegyada Habaynta

· Jihaynta kiristaalka: 4H-SiC (caadiga ah) ama 6H-SiC (codsiyada gaarka ah).

· Hagaajinta Doping-ka: Sifooyinka N-nooca/Nooca P-ga/Nooca-dahaarka ee loo habeeyey.

· Nadiifin heer sare ah: Nadiifinta CMP iyo daaweynta dusha sare ee epi-ready (Ra < 0.3 nm).

3. Taageerada Farsamada

· Tijaabin muunad bilaash ah: Waxaa ku jira warbixinnada cabbirka saameynta XRD, AFM, iyo Hall.

· Caawinta jilitaanka qalabka: Waxay taageertaa korriinka epitaxial iyo hagaajinta naqshadeynta qalabka.

4. Jawaab degdeg ah

· Samaynta qaab-dhismeedka mugga yar: Dalabka ugu yar ee 10 wafer, oo la keeno 3 toddobaad gudahood.

· Saadka caalamiga ah: Iskaashiga lala yeesho DHL iyo FedEx si loogu gudbiyo albaab ilaa albaab.

5. Hubinta Tayada

· Kormeerka habka oo dhammaystiran: Waxay daboolaysaa muuqaalka dhulka ee raajada (XRT) iyo falanqaynta cufnaanta cilladaha.

· Shahaadooyin caalami ah: Waafaqsan heerarka IATF 16949 (darajada baabuurta) iyo heerarka AEC-Q101.

Gunaanad

Substrates-ka abuurka SiC ee XKH waxay ku fiican yihiin tayada kristalinta, xasilloonida silsiladda saadka, iyo dabacsanaanta habaynta, iyagoo u adeegaya elektarooniga awoodda, isgaarsiinta 5G, tamarta la cusboonaysiin karo, iyo teknoolojiyada difaaca. Waxaan sii wadeynaa horumarinta tignoolajiyada wax soo saarka tirada badan ee SiC ee 8-inji ah si aan u horumarinno warshadaha semiconductor-ka jiilka saddexaad.

Kii hore: Saxan/saxan dhoobada ah oo SiC ah oo loogu talagalay hayaha wafer-ka 4 inji ah ee 6 inji ah ee ICP

Xiga: Substrates Seed SiC ah oo loo habeeyey Dia 205/203/208 Nooca 4H-N ee Isgaarsiinta Indhaha