99.999% Al2O3 sapphire boule monocrystal wax hufan
Sapphire waa shay gaar ah oo inta badan maanta laga isticmaalo warshadaha. Sapphire waa walaxda ugu adag, ka labaad oo kaliya dheeman, kaas oo leh a engegnaanta Mohs ee 9. Ma aha oo kaliya u adkaysta xagashada iyo nabarrada, laakiin sidoo kale u adkaysta kiimikooyinka kale sida acids iyo alkalis, taas oo ka dhigaysa mid aad uga xoog badan qalabka kale ee indhaha. Sidaa darteed, waxay ku habboon tahay semiconductor iyo farsamaynta kiimikada. Iyada oo barta dhalaalaysa ee ku dhow 2050 ° C, sapphire waxaa loo isticmaali karaa codsiyada kulaylka sarreeya ilaa 1800 ° C, xasilloonida kulaylkeedu sidoo kale waa ka sarreeyaa qalabka kale ee indhaha. Intaa waxaa dheer, sapphire waa hufan laga bilaabo 180nm ilaa 5500nm, iyo noocyada kala duwan ee sifooyinka hufnaanta indhaha ka dhigaysa sapphire qalabka ugu fiican ee infrared iyo ultraviolet nidaamka indhaha. Ugu dambeyntiina, sapphire sidoo kale waa walxo caan ah oo ku jira warshadaha dahabka, oo si gaar ah loogu gartaa nadiifnimadeeda sare, gudbinta iftiinka iyo adkaanta. Midabka sapphire waa la bedeli karaa iyadoo loo eegayo shuruudo kala duwan, iyadoo la siinayo macaamiisha fursado badan oo kala duwan.
Astaamaha jireed ee Sapphire ingot/boule/qalabka:
ballaarinta kulaylka | 6.7*10-6 // dhidibka C-5.0*10-6± C-dhidibka |
iska caabin koronto | 1011Ω/cm at 500℃, 106Ω/cm at 1000℃, 103Ω/cm at 2000℃ |
index refractive | 1.769 // C-dhidibka,1.760 ± C-dhidibka, 0.5893um |
iftiin muuqda | marka la barbardhigo |
oogada oogada | ≤5A |
hanuunin | <0001>, <11-20>, <1-102>, <10-10>±0.2° |
Sifada alaabta
miisaanka | 80kg/200kg/400kg |
cabbirka | hanuuninta gaarka ah iyo chips size waa la beddeli karaa iyadoo la raacayo shuruudaha macaamiisha |
midab | hufan |
shabag crystal ah | crystal hal gees ah |
daahirnimo | 99.999% Monocrystaline Al2O3 |
barta dhalaalaysa | 2050 ℃ |
qallafsanaan | Mohs9, buro engegan ≥1700kg/mm2 |
modules laastikada | 3.5*106 ilaa 3.9*106kg/cm2 |
xoog cadaadis | 2.1*104 kg/cm2 |
xoog adkaysi | 1.9*103 kg/cm2 |