99.999% Al2O3 sapphire boule monocrystal wax hufan

Sharaxaad Gaaban:

Hufan 80kg sapphire hal crystal ayaa leh sifooyin kulayl wanaagsan, sifooyin koronto iyo dielectric aad u fiican, iyo caabbinta daxalka kiimikada, iska caabinta heerkulka sare, kulaylka wanaagsan, engegnaanta sare, dhexgalka infrared, xasilloonida kiimikada wanaagsan, si ballaaran loo isticmaalo in heerkulka sare u adkaysta qalabka infrared iyo III -V nitride iyo noocyo kala duwan oo ah qalabka substrate film epitaxial


Faahfaahinta Alaabta

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Sapphire waa shay gaar ah oo inta badan maanta laga isticmaalo warshadaha. Sapphire waa walaxda ugu adag, ka labaad oo kaliya dheeman, kaas oo leh a engegnaanta Mohs ee 9. Ma aha oo kaliya u adkaysta xagashada iyo nabarrada, laakiin sidoo kale u adkaysta kiimikooyinka kale sida acids iyo alkalis, taas oo ka dhigaysa mid aad uga xoog badan qalabka kale ee indhaha. Sidaa darteed, waxay ku habboon tahay semiconductor iyo farsamaynta kiimikada. Iyada oo barta dhalaalaysa ee ku dhow 2050 ° C, sapphire waxaa loo isticmaali karaa codsiyada kulaylka sarreeya ilaa 1800 ° C, xasilloonida kulaylkeedu sidoo kale waa ka sarreeyaa qalabka kale ee indhaha. Intaa waxaa dheer, sapphire waa hufan laga bilaabo 180nm ilaa 5500nm, iyo noocyada kala duwan ee sifooyinka hufnaanta indhaha ka dhigaysa sapphire qalabka ugu fiican ee infrared iyo ultraviolet nidaamka indhaha. Ugu dambeyntiina, sapphire sidoo kale waa walxo caan ah oo ku jira warshadaha dahabka, oo si gaar ah loogu gartaa nadiifnimadeeda sare, gudbinta iftiinka iyo adkaanta. Midabka sapphire waa la bedeli karaa iyadoo loo eegayo shuruudo kala duwan, iyadoo la siinayo macaamiisha fursado badan oo kala duwan.

Astaamaha jireed ee Sapphire ingot/boule/qalabka:

ballaarinta kulaylka

6.7*10-6 // dhidibka C-5.0*10-6± C-dhidibka

iska caabin koronto

1011Ω/cm at 500℃, 106Ω/cm at 1000℃, 103Ω/cm at 2000℃

index refractive

1.769 // C-dhidibka,1.760 ± C-dhidibka, 0.5893um

iftiin muuqda

marka la barbardhigo

oogada oogada

≤5A

hanuunin

<0001>, <11-20>, <1-102>, <10-10>±0.2°

Sifada alaabta

miisaanka

80kg/200kg/400kg

cabbirka

hanuuninta gaarka ah iyo chips size waa la beddeli karaa iyadoo la raacayo shuruudaha macaamiisha

midab

hufan

shabag crystal ah

crystal hal gees ah

daahirnimo

99.999% Monocrystaline Al2O3

barta dhalaalaysa

2050 ℃

qallafsanaan

Mohs9, buro engegan ≥1700kg/mm2

modules laastikada

3.5*106 ilaa 3.9*106kg/cm2

xoog cadaadis

2.1*104 kg/cm2

xoog adkaysi

1.9*103 kg/cm2

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