6inch SiC Epitaxyy wafer N/P nooca aqbal habaysan

6inch SiC Epitaxiy wafer N/P nooca aqbal sawirka la sifeeyay

Sharaxaad Gaaban:

Bixinta 4, 6, 8 inch silicon carbide wafer epitaxial iyo adeegyada aasaasiga ah ee epitaxial, qalabka wax soo saarka (600V ~ 3300V) oo ay ku jiraan SBD, JBS, PiN, MOSFET, JFET, BJT, GTO, IGBT iyo wixii la mid ah.

Waxaan bixin karnaa 4-inch iyo 6-inch SiC epitaxial wafers oo loogu talagalay soo saarista aaladaha korantada oo ay ku jiraan SBD JBS PiN MOSFET JFET BJT GTO & IGBT laga bilaabo 600V ilaa 3300V

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Faahfaahinta Alaabta

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Habka diyaarinta ee wafer silikoon carbide epitaxial waa hab la isticmaalayo tignoolajiyada Uumiga Kiimikada (CVD). Kuwa soo socda ayaa ah mabaadi'da farsamo ee khuseeya iyo tillaabooyinka habka diyaarinta:

Mabda'a farsamada:

Kaydinta Uumiga Kiimikada: Isticmaalka gaasta alaabta ceeriin ee wejiga gaaska, xaaladaha falcelinta gaarka ah, waa la jajabiyaa oo lagu shubaa substrate si loo sameeyo filim khafiif ah oo la doonayo.

Falcelinta-wajiga gaaska: Iyada oo loo marayo pyrolysis ama falcelinta dillaaca, gaasaska alaabta ceeriin ee kala duwan ee wejiga gaaska ayaa kiimiko ahaan lagu beddelaa qolka falcelinta.

Tillaabooyinka habka diyaarinta:

Daawaynta substrate-ka: Substrate-ka waxa lagu sakhiray nadiifinta dusha sare iyo ka-hortag si loo hubiyo tayada iyo crystallinity waferka epitaxial.

Dejinta qolka falcelinta: hagaajin heerkulka, cadaadiska iyo heerka qulqulka qolka falcelinta iyo cabbirrada kale si loo hubiyo xasilloonida iyo xakamaynta xaaladaha falcelinta.

Sahayda alaabta ceeriin: Keen alaabta ceeriin ee loo baahan yahay qolka falcelinta, isku-darka iyo xakamaynta heerka socodka marka loo baahdo.

Habka falcelinta: Marka la kululeeyo qolka falcelinta, xoolaha gaaska leh ayaa ku dhaca fal-celin kiimikaad qolka si ay u soo saaraan dhigaalka la rabo, tusaale ahaan filimka silikoon carbide.

Qaboojinta iyo dejinta: Dhammaadka falcelinta, heerkulka ayaa si tartiib tartiib ah hoos loogu dhigaa si loo qaboojiyo oo loo adkeeyo kaydka qolka falcelinta.

Epitaxial wafer annealing and post-processing: maraqa epitaxial waa la tirtiray oo dib loo habeeyey si loo hagaajiyo hantideeda korantada iyo indhaha.

Tallaabooyinka gaarka ah iyo shuruudaha habka diyaarinta waferka ee silikoon carbide epitaxial wafer way kala duwanaan kartaa iyadoo ku xiran qalabka gaarka ah iyo shuruudaha. Korku waa kaliya socodka guud iyo mabda'a, hawlgalka gaarka ah wuxuu u baahan yahay in la hagaajiyo oo la hagaajiyo iyadoo loo eegayo xaaladda dhabta ah.