6inch HPSI SiC substrate wafer Silicon Carbide Semi-aflagaado SiC ah

6inch HPSI SiC substrate wafer Silicon Carbide Semi-aflagaado SiC wafers Sawir leh

Sharaxaad Gaaban:

SiC wafer tayo sare leh oo kali ah (Silicon Carbide oo ka socota SICC) ilaa warshadaha elektiroonigga ah iyo indhaha. 3inch SiC wafer waa qalab semiconductor jiilka xiga, wafers silikoon-carbide-ka-dahaaran oo badh ah dhexroor 3-inji ah. Wafers-yada waxaa loogu talagalay samaynta awoodda, RF iyo aaladaha optoelectronics.

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PVT Silicon Carbide Crystal SiC Growth Technology

Hababka koritaan ee hadda jira ee SiC hal crystal inta badan waxaa ka mid ah saddexdan soo socda: Habka wajiga dareeraha, habka kaydinta uumiga kiimikada heerkulka sare, iyo habka gaadiidka wajiga uumiga (PVT). Waxaa ka mid ah, habka PVT waa tignoolajiyada ugu cilmi baarista iyo qaan-gaarka ah ee SiC kobaca crystal hal, iyo dhibaatooyinkeeda farsamo waa:

(1) SiC hal crystal ee heerkulka sare ee 2300 ° C ee ka sarreeya qolka graphite xiran si ay u dhamaystirto "adag - gaaska - adag" habka beddelka recrystallisation, wareegga koritaanka waa dheer, adag tahay in la xakameeyo, iyo u nugul microtubules, inclusions iyo cilladaha kale.

(2) Silicon carbide hal crystal, oo ay ku jiraan in ka badan 200 noocyada crystal kala duwan, laakiin wax soo saarka ee guud ahaan hal nooc oo crystal ah, fudud si ay u soo saaraan nooca crystal transformation ee habka koritaanka taasoo keentay cilladaha inclusions noocyo badan, habka diyaarinta ee hal hal. nooca crystal gaar ah way adag tahay in la xakameeyo xasiloonida geedi socodka, tusaale ahaan, caadiga ah hadda ee nooca 4H.

(3) Silikon carbide hal goob kulaylka koritaanka crystal waxaa jira heerkulbeeg heerkulbeeg ah, taasoo keentay in geeddi-socodka kobaca crystal waxaa jira stress gudaha hooyo iyo kacsi ka dhashay, cilladaha iyo cilladaha kale keentay.

(4) Silikon carbide habka kobaca crystal hal wuxuu u baahan yahay in si adag loo xakameeyo hordhaca ah ee wasakh dibadda, si loo helo daahirnimo aad u sarreeya semi-insulating crystal ama crystal conductive conductive si toos ah doped. Substrates-ka silikoon carbide substrates-ka ah ee loo isticmaalo aaladaha RF, guryaha korantada ayaa loo baahan yahay in lagu gaaro iyada oo la xakameynayo fiirsashada wasakhda aadka u yar iyo noocyada gaarka ah ee ciladaha kristal.