6 inji GaN-On-Sapphire
150mm 6inch GaN oo ku taal Silicon/Sapphire/SiC Wafer Epi-lakab ah oo Gallium nitride ah
Wafer-ka sapphire-ka ee 6-inji ah waa walax semiconductor tayo sare leh oo ka kooban lakabyo gallium nitride (GaN) ah oo lagu beero substrate sapphire ah. Maaddadu waxay leedahay sifooyin gaadiid elektaroonik ah oo aad u fiican waxayna ku habboon tahay soo saarista aaladaha semiconductor-ka ee awoodda sare leh iyo kuwa soo noqnoqda sare leh.
Habka wax soo saarka: Habka wax soo saarku wuxuu ku lug leeyahay korriinka lakabyada GaN ee ku yaal substrate sapphire ah iyadoo la adeegsanayo farsamooyin horumarsan sida dhigista uumiga kiimikada birta-dabiiciga ah (MOCVD) ama epitaxy-ka molecular beam (MBE). Habka dhigista waxaa lagu sameeyaa xaalado la xakameeyey si loo hubiyo tayada sare ee kiristaalka iyo filim isku mid ah.
Codsiyada GaN-On-Sapphire ee 6-inji ah: Chips-ka substrate-ka sapphire ee 6-inji ah ayaa si weyn loogu isticmaalaa isgaarsiinta microwave-ka, nidaamyada radar-ka, tignoolajiyada wireless-ka iyo optoelectronics-ka.
Qaar ka mid ah codsiyada caadiga ah waxaa ka mid ah
1. Qalabka korontada Rf
2. Warshadaha nalalka LED-ka
3. Qalabka isgaarsiinta shabakadda bilaa-waayirka ah
4. Aaladaha elektarooniga ah ee jawiga heerkulka sare leh
5. Qalabka elektiroonigga ah
Qeexitaannada alaabta
- Cabbirka: Dhexroorka substrate-ka waa 6 inji (qiyaastii 150 mm).
- Tayada dusha sare: Dusha sare si fiican ayaa loo safeeyey si loo bixiyo tayo muraayad oo aad u wanaagsan.
- Dhumuc: Dhumucda lakabka GaN waxaa loo habeyn karaa iyadoo loo eegayo shuruudaha gaarka ah.
- Baakad: Substrate-ka waxaa si taxaddar leh loogu buuxiyay walxo ka hortag ah si looga hortago waxyeelada inta lagu jiro rarista.
- Cidhifyada meelaynta: Substrate-ku wuxuu leeyahay cidhifyo meelayn gaar ah oo sahlaya iswaafajinta iyo hawlgalka inta lagu jiro diyaarinta qalabka.
- Xuruufo kale: Xuruufo gaar ah sida khafiifnimada, iska caabinta iyo xoojinta daawada ayaa la hagaajin karaa iyadoo loo eegayo shuruudaha macaamiisha.
Iyada oo leh sifooyinkooda agabka sare iyo codsiyada kala duwan, wafers-ka substrate sapphire 6-inji ah waa doorasho lagu kalsoonaan karo oo loogu talagalay horumarinta aaladaha semiconductor-ka ee waxqabadka sare leh ee warshadaha kala duwan.
| Substrate | 6" 1mm <111> nooca p Si | 6" 1mm <111> nooca p Si |
| Epi Thick Celcelis ahaan | ~5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| Qaansada | +/- 45um | +/- 45um |
| Dildilaaca | <5mm | <5mm |
| BV-ga Toosan | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| Dhumucda HemT Celcelis ahaan | 20-30nm | 20-30nm |
| Koofiyadda Insitu SiN | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Dhaqdhaqaaqa | ~ 2000cm2/Vs (<2%) | ~ 2000cm2/Vs (<2%) |
| Rsh | <330ohm/sq (<2%) | <330ohm/sq (<2%) |
Jaantus Faahfaahsan
