6inch GaN-On-Sapphire

Sharaxaad Gaaban:

150mm 6inch GaN dusha Silicon/Sapphire/SiC Epi-lakabka wafer Gallium nitride epitaxial wafer

Sapphire substrate ee 6-inji ah waa walxo semiconductor tayo sare leh oo ka kooban lakabyo gallium nitride (GaN) oo ku koray substrate sapphire. Maaddadu waxay leedahay sifooyin gaadiid elektaroonig ah oo heer sare ah waxayna ku habboon tahay soo saarista aaladaha semiconductor-ka sare iyo kuwa soo noqnoqda.

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150mm 6inch GaN dusha Silicon/Sapphire/SiC Epi-lakabka wafer Gallium nitride epitaxial wafer

Habka wax-soo-saarka: Habka wax-soo-saarka ayaa ku lug leh kobcinta lakabyada GaN ee substrate sapphire iyadoo la adeegsanayo farsamooyin horumarsan sida kaydinta uumiga kiimikada ee birta-organic (MOCVD) ama molecular beam epitaxy (MBE). Habka dhigista waxaa lagu fuliyaa xaaladaha la xakameeyey si loo hubiyo tayada sare ee crystal iyo filimada lebis.

Codsiyada 6inch GaN-On-Sapphire: Chips substrate sapphire 6-inji ah ayaa si weyn loogu isticmaalaa isgaadhsiinta microwave, nidaamyada radar, tignoolajiyada wireless-ka iyo optoelectronics.

Qaar ka mid ah codsiyada caadiga ah waxaa ka mid ah

1. Cod-weyneeye Rf

2. Warshadaha iftiinka LED

3. Qalabka isgaadhsiinta ee shabakada wireless

4. Qalabka elektarooniga ah ee jawiga heerkulka sare

5. Qalabka Optoelectronic

Tilmaamaha alaabta

- Cabbirka: Dhexroorka substrate-ku waa 6 inji (qiyaastii 150 mm).

- Tayada dusha sare: Dusha sare ayaa si fiican loo qurxiyey si ay u bixiso tayada muraayadda aad u fiican.

- Dhumucda: Dhumucda lakabka GaN waxaa loo habeyn karaa iyadoo loo eegayo shuruudo gaar ah.

- Baakadaha: Substrate-ka waxaa si taxadar leh loogu buuxiyey walxaha lidka ku ah static si looga hortago burburka inta lagu jiro gaadiidka.

- Meelaynta cidhifyada: Substrate-ku wuxuu leeyahay geeso gaar ah oo fududeeya isku-habaynta iyo hawlgalka inta lagu jiro diyaarinta aaladda.

- Halbeegyada kale: Qiyaasaha gaarka ah sida caatada, iska caabbinta iyo feejignaanta doping ayaa lagu hagaajin karaa iyadoo loo eegayo shuruudaha macaamiisha.

Iyada oo leh hantidooda agabka sare iyo codsiyada kala duwan, 6-inch sapphire substrate wafers waa doorasho lagu kalsoonaan karo oo loogu talagalay horumarinta aaladaha wax-qabadka sare leh ee warshadaha kala duwan.

Substrate	6" 1mm <111> p-nooca Si	6" 1mm <111> p-nooca Si
Epi ThickAvg	~5um	~7um
Epi ThickUnif	<2%	<2%
Qaansada	+/-45um	+/-45um
Dilaac	<5mm	<5mm
BV toosan	>1000V	>1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
2DEG conc.	~10¹³cm^-2	~10¹³cm^-2
Dhaqdhaqaaqa	~2000cm²/Vs (<2%)	~2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)