Substrate-ka Isku-dhafka ah ee 6 Inch ee Qaboojinta SiC 4H Dhexroor 150mm Ra≤0.2nm Warp≤35μm

Substrate-ka Isku-dhafka ah ee 6 Inch ee SiC-ga ah ee la socda 4H Dhexroor 150mm Ra≤0.2nm Warp≤35μm Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Iyada oo ay ku saleysan tahay raadinta warshadaha semiconductor-ka ee waxqabadka sare iyo kharashka hooseeya, substrate-ka isku-dhafka ah ee 6-inch ee gudbiya korontada ayaa soo baxay. Iyada oo loo marayo tignoolajiyada isku-dhafka ah ee hal-abuurka leh, wafer-kan 6-inch ah wuxuu gaaraa 85% waxqabadka wafer-yada dhaqameed ee 8-inch halka uu ku kacayo 60% oo keliya. Qalabka korontada ee codsiyada maalinlaha ah sida saldhigyada cusub ee dallacaadda baabuurta tamarta, modules-ka awoodda saldhigga saldhigga 5G, iyo xitaa darawallada soo noqnoqda ee isbeddelka leh ee qalabka guryaha ee heerka sare ah ayaa laga yaabaa inay horey u isticmaalayeen substrates noocan ah. Tiknoolajiyadayada kobaca epitaxial ee lakabka badan leh ee shatiga leh waxay awood u siineysaa is-dhexgalka isku-dhafka ah ee heerka atomiga ee saldhigyada SiC, iyadoo cufnaanta xaaladda is-dhexgalka ay ka hooseyso 1×10¹¹/cm²·eV - qeexitaan gaaray heerarka hormuudka ka ah caalamka.

Noo soo dir emayl

Astaamaha

Xuduudaha farsamada

Alaabta	Soo saaristadarajo	Nacasnimodarajo
Dhexroorka	6-8 inji	6-8 inji
Dhumucda	350/500±25.0 μm	350/500±25.0 μm
Nooc polytype ah	4H	4H
Iska caabin	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
TV-ga	≤5 μm	≤20 μm
Duub	≤35 μm	≤55 μm
Qalafsanaanta hore (Si-wejiga)	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Astaamaha Muhiimka ah

1. Faa'iidada Kharashka: Substrate-ka isku-dhafka ah ee 6-inji ah ee SiC wuxuu adeegsadaa tignoolajiyada "lakabka kaydka ee la qiimeeyay" ee gaarka ah kaas oo hagaajiya isku-dhafka walxaha si loo yareeyo kharashyada alaabta ceeriin 38% iyadoo la ilaalinayo waxqabadka korantada ee aadka u fiican. Cabbiraadaha dhabta ah waxay muujinayaan in aaladaha 650V MOSFET ee isticmaalaya substrate-kan ay gaaraan 42% dhimis kharashka halkii unug marka la barbar dhigo xalalka caadiga ah, taas oo muhiim u ah kor u qaadista qaadashada qalabka SiC ee qalabka elektaroonigga macaamiisha.
2. Sifooyinka Gudbinta ee Aad u Fiican: Iyada oo loo marayo hababka xakamaynta doping nitrogen ee saxda ah, substrate-kayaga isku-dhafka ah ee 6-inch ee gudbiya SiC wuxuu gaaraa iska caabin aad u hooseeya oo ah 0.012-0.022Ω·cm, iyadoo kala duwanaansho la xakameynayo gudaha ±5%. Si gaar ah, waxaan ilaalinaa isku-midnimada iska caabinta xitaa gudaha gobolka geeska 5mm ee wafer-ka, annagoo xallinayna dhibaato saameyn geeseed oo muddo dheer jirtay warshadaha.
3. Waxqabadka Kulaylka: Module 1200V/50A ah oo lagu sameeyay substrate-keena ayaa muujinaya oo keliya kororka heerkulka isgoyska 45℃ oo ka sarreeya jawiga marka uu si buuxda u shaqeynayo - 65℃ ka hooseeya aaladaha ku salaysan silicon ee la barbar dhigi karo. Tan waxaa suurtageliya qaab-dhismeedka isku-dhafka ah ee "kanaalka kuleylka 3D" kaas oo hagaajiya kulaylka dhinaca ilaa 380W/m·K iyo kulaylka toosan ilaa 290W/m·K.
4. Iswaafajinta Habka: Qaab-dhismeedka gaarka ah ee substrate-yada isku-dhafka ah ee SiC ee 6-inji ah, waxaan soo saarnay hab-raac laysarka qarsoon oo isku mid ah oo gaaraya xawaare goyn 200mm/s iyadoo la xakameynayo jajabka geeska ka hooseeya 0.3μm. Intaa waxaa dheer, waxaan bixinnaa ikhtiyaarro substrate ah oo horay loo dahaadhay oo awood u siinaya isku-xidhka tooska ah ee dhimaha, taasoo macaamiisha u badbaadinaysa laba tallaabo oo geeddi-socod ah.

Codsiyada ugu Muhiimsan

Qalabka Shabakadaha Casriga ah ee Muhiimka ah:

Nidaamyada gudbinta ee hadda korontada tooska ah ee aadka u sarreeya (UHVDC) ee ka shaqeeya ± 800kV, aaladaha IGCT ee isticmaalaya substrate-ka SiC ee 6-inji ah ee gudbiya korontada waxay muujinayaan horumarin waxqabad oo cajiib ah. Qalabkani wuxuu gaaraa 55% dhimista khasaaraha beddelka inta lagu jiro hababka wareejinta, halka uu kordhinayo waxtarka guud ee nidaamka inuu ka sarreeyo 99.2%. Qaboojinta kulaylka sare ee substrate-ka (380W/m·K) waxay suurtogal ka dhigaysaa naqshadaha beddelayaasha is haysta ee yareeya raadadka saldhigga hoose 25% marka la barbar dhigo xalalka caadiga ah ee ku salaysan silicon.

Tareenada Cusub ee Gawaarida Tamarta:

Nidaamka wadista oo ku jira substrate-keena 6-inji ah ee SiC conductive substrates wuxuu gaaraa cufnaanta awoodda inverter-ka ee aan hore loo arag oo ah 45kW/L - taasoo ah horumar 60% ah marka loo eego naqshadoodii hore ee ku salaysan siliconka 400V. Waxa ugu cajiibsan, nidaamku wuxuu ilaaliyaa hufnaanta 98% ee heerkulka hawlgalka oo dhan laga bilaabo -40℃ ilaa +175℃, taasoo xallinaysa caqabadaha waxqabadka cimilada qabow ee saameeyay qaadashada EV ee cimilada waqooyi. Tijaabooyinka dhabta ah waxay muujinayaan koror 7.5% ah oo ku yimid kala duwanaanshaha jiilaalka ee baabuurta ku qalabaysan tiknoolajiyaddan.

Darawalada Soo Noqnoqoshada Isbeddelka Warshadaha:

Qaadashada substrates-keena ee modules-ka awoodda caqliga leh (IPMs) ee nidaamyada servo-ga warshadaha ayaa beddelaysa otomaatiga wax soo saarka. Xarumaha mashiinka CNC, modules-yadani waxay bixiyaan jawaab celin matoor oo 40% dhakhso badan (yaraynta waqtiga dardargelinta laga bilaabo 50ms ilaa 30ms) halka ay jarayso buuqa elektromagnetic-ka 15dB ilaa 65dB (A).

Elektarooniga Macaamiisha:

Kacaankii elektaroonigga macaamiisha ayaa sii socda iyadoo substrates-keennu uu awood u siinayo dallacaadaha degdega ah ee jiilka xiga ee 65W GaN. Adaptors-kan korontada ee is haysta waxay gaaraan hoos u dhac mugga 30% ah (ilaa 45cm³) iyagoo ilaalinaya wax soo saarka awoodda oo dhan, taas oo ay ugu wacan tahay sifooyinka beddelka sare ee naqshadaha ku salaysan SiC. Sawir-qaadista kulaylka waxay muujinaysaa heerkulka ugu badan ee kiiska oo ah 68°C inta lagu jiro hawlgalka joogtada ah - 22°C ka qabow marka loo eego naqshadaha caadiga ah - si weyn ayay u hagaajinaysaa cimriga badeecada iyo badbaadada.

Adeegyada Habaynta XKH

XKH waxay bixisaa taageero dhammaystiran oo loogu talagalay substrate-ka isku-dhafka ah ee SiC ee 6-inji ah:

Habaynta Dhumucda: Xulashooyinka oo ay ku jiraan qeexitaannada 200μm, 300μm, iyo 350μm
2. Xakamaynta iska caabinta: Fiirsashada daawada nooca n-ga ah ee la hagaajin karo laga bilaabo 1 × 10¹⁸ ilaa 5 × 10¹⁸ cm⁻³

3. Jihaynta Crystal: Taageerada jihooyinka badan oo ay ku jiraan (0001) dhidibka ka baxsan 4° ama 8°

4. Adeegyada Tijaabada: Warbixinnada tijaabada ee heerka wafer-ka oo dhammaystiran

Waqtiga aan hadda haysanno laga bilaabo tijaabinta ilaa wax soo saarka ballaaran wuxuu noqon karaa 8 toddobaad. Macaamiisha istaraatiijiga ah, waxaan bixinnaa adeegyo horumarineed oo gaar ah si loo hubiyo in si fiican loogu waafajiyo shuruudaha qalabka.