Dhumucda Substrate-ka Isku-dhafan ee 6 inji-8 inji LN-on-Si 0.3-50 μm Si/SiC/Sapphire oo Agab ah

Dhumucda Substrate-ka Isku-dhafan ee 6 inji-8 inji LN-on-Si 0.3-50 μm Si/SiC/Sapphire oo ah Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Substrate-ka isku-dhafka ah ee LN-on-Si ee 6-inji ilaa 8-inji ah waa walax waxqabad sare leh oo isku daraysa filimaan khafiif ah oo hal-crystal lithium niobate (LN) ah oo leh substrate-yo silicon (Si), oo dhumucdoodu u dhaxayso 0.3 μm ilaa 50 μm. Waxaa loogu talagalay sameynta qalabka semiconductor-ka ee horumarsan iyo optoelectronic-ka. Iyada oo la adeegsanayo isku-xidhka horumarsan ama farsamooyinka koritaanka epitaxial, substrate-kani wuxuu hubiyaa tayada sare ee crystalline-ka ee filimka khafiifka ah ee LN isagoo adeegsanaya cabbirka wafer-ka weyn (6-inji ilaa 8-inji) ee substrate-ka silicon si loo xoojiyo hufnaanta wax soo saarka iyo hufnaanta kharashka.
Marka la barbardhigo walxaha LN ee caadiga ah ee badan, substrate-ka isku-dhafka ah ee 6-inji ilaa 8-inji ee LN-on-Si wuxuu bixiyaa isku-dheelitir kuleyl oo heer sare ah iyo xasillooni farsamo, taasoo ka dhigaysa mid ku habboon habaynta heerka wafer-ka ee baaxadda weyn. Intaa waxaa dheer, agabyada saldhigga kale sida SiC ama safayr ayaa la dooran karaa si loo daboolo shuruudaha codsiga gaarka ah, oo ay ku jiraan aaladaha RF ee soo noqnoqda sare, photonics isku dhafan, iyo dareemayaasha MEMS.

Noo soo dir emayl

Astaamaha

Xuduudaha farsamada

0.3-50μm LN/LT oo ku jira Insulators-ka
Lakabka sare
Dhexroorka	6-8 inji
Jihaynta	X, Z, Y-42 iwm.
Agabka	LT, LN
Dhumucda	0.3-50μm
Substrate (La habeeyey)
Alaab	Si, SiC, Safayr, Spinel, Quartz

Astaamaha Muhiimka ah

Substrate-ka isku-dhafka ah ee 6-inji ilaa 8-inji ah ee LN-on-Si waxaa lagu kala saaraa sifooyinka gaarka ah ee agabka iyo xuduudaha la hagaajin karo, taasoo suurtogalinaysa ku habboonaan ballaaran warshadaha semiconductor-ka iyo optoelectronic-ka:

1. Iswaafajinta Wafer Weyn: Cabbirka wafer-ka ee 6-inch ilaa 8-inch wuxuu hubiyaa is-dhexgal aan kala go 'lahayn oo leh khadadka wax-soo-saarka semiconductor-ka ee jira (tusaale ahaan, hababka CMOS), yaraynta kharashyada wax-soo-saarka iyo suurtogalinta wax-soo-saarka tirada badan.

2. Tayada Sare ee Crystalline: Farsamooyinka epitaxial ama isku xidhka ee la hagaajiyay waxay hubiyaan cufnaanta cilladaha yar ee filimka khafiifka ah ee LN, taasoo ka dhigaysa mid ku habboon modulators-ka indhaha ee waxqabadka sare leh, shaandheeyayaasha hirarka dhawaaqa dusha sare (SAW), iyo aaladaha kale ee saxda ah.

3. Dhumucda La Hagaajin Karo (0.3–50 μm): Lakabyada LN ee aadka u khafiifsan (<1 μm) waxay ku habboon yihiin jajabyada photonic ee isku dhafan, halka lakabyada qaro weyn (10–50 μm) ay taageeraan aaladaha RF ee awoodda sare leh ama dareemayaasha piezoelectric.

4. Xulashooyinka Substrate-ka Badan: Marka lagu daro Si, SiC (daawaynta kulaylka sare) ama safayr (dahaarka sare) ayaa loo dooran karaa agab saldhig ah si loo daboolo baahiyaha codsiyada soo noqnoqda sare, heerkulka sare, ama awoodda sare.

5. Xasiloonida Kuleylka iyo Farsamada: Substrate-ka silikoonku wuxuu bixiyaa taageero farsamo oo adag, isagoo yareynaya qallooca ama dildilaaca inta lagu jiro farsamaynta iyo hagaajinta wax soo saarka qalabka.

Sifooyinkani waxay dhigaan substrate-ka isku-dhafka ah ee 6-inji ilaa 8-inji ee LN-on-Si oo ah agab la doorbido tignoolajiyada casriga ah sida isgaarsiinta 5G, LiDAR, iyo indhaha quantum.

Codsiyada ugu Muhiimsan

Substrate-ka isku-dhafka ah ee 6-inji ilaa 8-inji ah ee LN-on-Si ayaa si weyn looga qaataa warshadaha tiknoolajiyada sare sababtoo ah sifooyinka gaarka ah ee electro-optic, piezoelectric, iyo acoustic:

1. Isgaarsiinta Indhaha iyo Sawir-qaadayaasha Isku-dhafan: Waxay awood u siineysaa modulators-yada elektaroonigga ah ee xawaaraha sare leh, hagayaasha hirarka, iyo wareegyada isku-dhafan ee sawir-qaadayaasha (PICs), iyagoo wax ka qabanaya baahiyaha baaxadda ee xarumaha xogta iyo shabakadaha fiber-optic.

Qalabka RF ee 2.5G/6G: Isku-dhafka sare ee piezoelectric ee LN wuxuu ka dhigayaa mid ku habboon shaandhaynta hirarka acoustic-ga dusha sare (SAW) iyo hirarka acoustic-ga badan (BAW), taasoo kor u qaadaysa habaynta calaamadaha saldhigyada saldhigga 5G iyo aaladaha mobilada.

3.MEMS iyo Dareemayaasha: Saamaynta piezoelectric ee LN-on-Si waxay sahlaysaa cabbiraadaha xawaaraha sare leh, dareemayaasha bayoolojiga, iyo qalabka wax lagu beddelo ee ultrasonic-ka ee loogu talagalay codsiyada caafimaadka iyo warshadaha.

4. Tiknoolajiyada Quantum: Maadaama ay tahay walxo aan toos ahayn oo indhaha ah, filimada khafiifka ah ee LN waxaa loo isticmaalaa ilaha iftiinka quantum (tusaale ahaan, lammaanayaasha photon ee isku dheggan) iyo jajabyada quantum ee isku dhafan.

5. Lasers-ka iyo Aragtiyada Aan Toosanayn: Lakabyada LN ee aadka u khafiifsan waxay awood u siinayaan aaladaha jiilka labaad ee isku-dhafan (SHG) iyo oscillation-ka optical parametric (OPO) ee wax-soo-saarka laysarka iyo falanqaynta spectroscopic-ga.

Substrate-ka isku-dhafka ah ee 6-inji ilaa 8-inji ah ee LN-on-Si wuxuu u oggolaanayaa aaladahaan in lagu sameeyo maro waaweyn oo wafer ah, taasoo si weyn hoos ugu dhigaysa kharashyada wax soo saarka.

Habaynta iyo Adeegyada

Waxaan bixinaa taageero farsamo oo dhammaystiran iyo adeegyo habayn ah oo loogu talagalay substrate-ka isku-dhafka ah ee 6-inji ilaa 8-inji ee LN-on-Si si loo daboolo baahiyaha kala duwan ee R&D iyo wax soo saarka:

1. Sameynta Gaarka ah: Dhumucda filimka LN (0.3–50 μm), jihada kiristaalka (X-cut/Y-cut), iyo walxaha substrate-ka ah (Si/SiC/sapphire) ayaa loo habeyn karaa si loo wanaajiyo waxqabadka qalabka.

2. Habaynta Heerka Wafer-ka: Sahay badan oo ah wafer 6-inji iyo 8-inji ah, oo ay ku jiraan adeegyada dambe sida jarista, nadiifinta, iyo dahaarka, taasoo hubinaysa in substrates-ku ay diyaar u yihiin is-dhexgalka qalabka.

3. La-talinta Farsamada iyo Tijaabada: Astaamaha agabka (tusaale ahaan, XRD, AFM), tijaabinta waxqabadka elektiroonigga ah, iyo taageerada jilitaanka qalabka si loo dedejiyo xaqiijinta naqshadda.

Hadafkayagu waa inaan abuurno substrate isku-dhafan oo ah 6-inji ilaa 8-inji LN-on-Si oo ah xal agab asaasi ah oo loogu talagalay codsiyada optoelectronic iyo semiconductor-ka, iyadoo la siinayo taageero dhammaad ilaa dhammaad ah oo ka timaadda R&D ilaa wax soo saar ballaaran.

Gunaanad

Substrate-ka isku-dhafka ah ee LN-on-Si oo ah 6-inji ilaa 8-inji, oo leh cabbir weyn oo wafer ah, tayo sare leh oo agab ah, iyo kala duwanaansho, ayaa horseedaya horumarka isgaarsiinta indhaha, 5G RF, iyo teknoolojiyada quantum. Hadday tahay wax-soo-saar mug sare leh ama xalal gaar ah, waxaanu bixinaa substrates la isku halleyn karo iyo adeegyo dhammaystiran si loo xoojiyo hal-abuurka tignoolajiyada.