6 inch-8 inch LN-on-Si Dhufadda Substrate-ka Isku-dhafan 0.3-50 μm Si/SiC/Sapphire Qalabka

6 inji-8 inch LN-on-Si Dhumucdiisuna waxay ka kooban tahay 0.3-50 μm Si/SiC/Sapphire ee Agabka Sawirka

Sharaxaad Gaaban:

6-inji ilaa 8-inji substrate-ka isku-dhafan ee LN-on-Si waa walxo waxqabad sare leh oo isku-dhafan hal-crystal lithium niobate (LN) filimo khafiif ah oo leh silikoon (Si), dhumucdiisuna waxay u dhaxaysaa 0.3 μm ilaa 50 μm. Waxaa loogu talagalay soo saarista qalabka semiconductor ee horumarsan iyo optoelectronic. Isticmaalka isku xidhka horumarsan ama farsamooyinka koritaanka epitaxial, substrate-kani wuxuu hubinayaa tayada crystalline sare ee filimka khafiifka ah ee LN iyadoo la xoojinayo cabbirka waferka weyn (6-inch ilaa 8-inch) ee substrate-ka silikoon si kor loogu qaado waxtarka wax soo saarka iyo wax-ku-oolnimada.
Marka la barbar dhigo alaabta LN ee tirada badan, 6-inji ilaa 8-inch LN-on-Si substrate composite wuxuu bixiyaa isbarbardhigga kulaylka sare iyo xasilloonida farsamada, taasoo ka dhigaysa mid ku habboon farsamaynta heerka wafer-ballaadhan. Intaa waxaa dheer, qalabka kale ee saldhigga ah sida SiC ama sapphire ayaa loo dooran karaa si ay u buuxiyaan shuruudaha codsiga, oo ay ku jiraan qalabka RF-sare ee soo noqnoqda, sawir-qaadista isku dhafan, iyo dareemayaasha MEMS.

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Faahfaahinta Alaabta

Tags Product

Xuduudaha farsamada

0.3-50μm LN/LT on Insulators
Lakabka sare
Dhexroorka	6-8 inji
Hanuuninta	X, Z, Y-42 iwm.
Qalabka	LT, LN
Dhumucda	0.3-50μm
Substrate (la habeeyey)
Qalab	Si, SiC, Sapphire, Spinel, Quartz

Astaamaha Muhiimka ah

6-inji ilaa 8-inch substrate-ka isku dhafan ee LN-on-Si waxaa lagu kala soocaa sifooyinkeeda shay ee gaarka ah iyo cabirrada la hagaajin karo, taasoo awood u siinaysa ku-dhaqanka ballaadhan ee warshadaha semiconductor iyo optoelectronic:

1.Large Wafer Compatibility: 6-inch to 8-inch wafer size waxay hubisaa is dhexgalka aan kala go 'lahayn ee khadadka wax-soo-saarka semiconductor ee jira (tusaale, hababka CMOS), hoos u dhigista kharashka wax soo saarka iyo awood-siinta wax-soo-saarka ballaaran.

2.High Crystalline Tayada: Farsamooyinka epitaxial ee la hagaajiyay ama isku-xirnaanta ayaa hubiya cufnaanta cilladda hoose ee filimka khafiifka ah ee LN, taas oo ka dhigaysa mid ku habboon modulators indhaha wax-qabadka sare leh, miirayaasha mowjadaha acoustic (SAW) iyo qalabka kale ee saxda ah.

3. Dhumucda la hagaajin karo (0.3-50 μm): Ultrathin LN layers (<1 μm) waxay ku habboon yihiin jajabyada sawir-qaadista ee isku dhafan, halka lakabyada dhumucdiisuna (10-50 μm) ay taageeraan qalabka RF ee awoodda sare leh ama dareemayaasha piezoelectric.

4.Multiple Substrate Options: Marka lagu daro Si, SiC (xakamaynta kulaylka sare) ama sapphire (dahaarka sare) ayaa loo dooran karaa sida alaabta aasaasiga ah si loo daboolo baahida soo noqnoqoshada sare, heerkulka sare, ama codsiyada awoodda sare.

5. Heerarka kuleylka iyo Mechanical Stability: Substrate-ka silikoon wuxuu bixiyaa taageero farsamo oo adag, isagoo yareynaya dagaalka ama dildilaaca inta lagu jiro farsamaynta iyo hagaajinta dhalidda qalabka.

Tilmaamahani waxay dhigayaan 6-inji ilaa 8-inch LN-on-Si substrate composite substrate sida walxo la door biday ee tignoolajiyada casriga ah sida isgaarsiinta 5G, LiDAR, iyo quantum optics.

Codsiyada ugu muhiimsan

6-inch ilaa 8-inch substrate-ka isku-dhafan ee LN-on-Si ayaa si weyn looga qaataa warshadaha tignoolajiyada sare sababtoo ah qalabkeeda korantada-optic-ga ee gaarka ah, piezoelectric, iyo acoustic:

1.Isgaadhsiinta indhaha iyo Sawir-qaadista Isku-dhafka ah: Waxay u sahlaysa-xawaaraha sare ee modulators electro-optic, waveguides, iyo sawir-qaadayaasha isku-dhafan (PICs), iyaga oo wax ka qabanaya baahida bandwidth ee xarumaha xogta iyo shabakadaha fiber-optic.

2.5G/6G RF Aaladaha: Isku-dhafka sare ee piezoelectric ee LN wuxuu ka dhigayaa mid ku habboon mowjadaha acoustic mowjadaha (SAW) iyo miirayaasha mowjadaha acoustic-ka ah (BAW), kor u qaadista calaamadaha ee saldhigyada 5G iyo aaladaha mobilada.

3.MEMS iyo Sensors: Saamaynta piezoelectric ee LN-on-Si waxay fududaynaysaa xawaaraha sare ee dareenka, biosensors, iyo transducers ultrasonic codsiyada caafimaadka iyo warshadaha.

4.Quantum Teknoolajiyada: Sida maaddada indhaha ee aan tooska ahayn, filimada khafiifka ah ee LN waxaa loo isticmaalaa ilaha iftiinka quantum (tusaale, lammaane sawir leh) iyo chips quantum isku dhafan.

5.Lasers iyo Optics-ka aan tooska ahayn: Ultrathin LN Layers waxay awood u siinaysaa jiilka labaad ee isku-dhafan (SHG) iyo qalabyada oscillation-ka (OPO) ee qalabka laser-ka iyo falanqaynta spectroscopic.

Halbeegga 6-inch ilaa 8-inch substrate composite LN-on-Si wuxuu u oggolaanayaa qalabkan in lagu soo saaro maro wafer oo baaxad weyn, taasoo si weyn u yaraynaysa kharashka wax soo saarka.

Habaynta iyo Adeegyada

Waxaan bixinaa taageero farsamo oo dhamaystiran iyo adeegyo habaynta 6-inch ilaa 8-inch LN-on-Si substrate composite si loo daboolo R&D kala duwan iyo baahiyaha wax soo saarka:

1.Custom Fabrication: Dhumucda filimka LN (0.3-50 μm), jihada crystal (X-cut / Y-cut), iyo walxaha substrate (Si / SiC / sapphire) ayaa loo habeyn karaa si kor loogu qaado waxqabadka qalabka.

2.Wafer-Level Processing: Sahayda badan ee 6-inch iyo 8-inch wafers, oo ay ku jiraan adeegyada dambe-dhamaadka sida jeexjeexa, polishing, iyo daahan, hubinta substrates ay diyaar u yihiin qalabaynta.

3. La-tashiga Farsamada iyo Tijaabada: Tilmaamaha walxaha (tusaale, XRD, AFM), tijaabinta waxqabadka korantada, iyo taageerada jilitaanka qalabka si loo dedejiyo ansaxinta naqshadeynta.

Hadafkayagu waa in la dhiso 6-inch ilaa 8-inch substrate-ka isku dhafan ee LN-on-Si oo ah xalka agabka aasaasiga ah ee codsiyada optoelectronic iyo semiconductor, oo bixiya taageero dhamaadka-ilaa-dhamaadka ah ee R&D ilaa wax soo saarka guud.

Gabagabo

6-inji ilaa 8-inji substrate-ka isku dhafan ee LN-on-Si, oo leh cabbirkeeda wafer-ka weyn, tayada agabka sare, iyo kala-duwanaanta, ayaa horseed u ah horumarka xagga isgaarsiinta indhaha, 5G RF, iyo tignoolajiyada tirada. Hadday tahay wax-soo-saarka mugga sare ama xalalka la habeeyey, waxaanu bixinaa substrates la isku halayn karo iyo adeegyo dhammaystir ah si loo xoojiyo hal-abuurka tignoolajiyada.