6 inch 4H SEMI Nooca SiC ka kooban substrate Dhumucdiisuna tahay 500μm TTV≤5μm darajada MOS

6 inch 4H SEMI Nooca SiC ka kooban substrate Dhumucdiisuna waxay tahay 500μm TTV≤5μm MOS darajada Sawirka

Sharaxaad Gaaban:

Horumarka degdega ah ee isgaadhsiinta 5G iyo tignoolajiyada radar, 6-inch semi-insulating SiC substrate composite substrate wuxuu noqday shay asaasi ah oo loogu talagalay soo saarista aaladaha soo noqnoqda. Marka la barbar dhigo substrate-yada caadiga ah ee GaAs, substrate-kani waxa uu ilaaliyaa iska caabin sare (>10⁸ Ω·cm) halka uu hagaajinayo kulaylka in ka badan 5x, isaga oo si wax ku ool ah wax uga qabanayo caqabadaha kulaylka ee aaladaha hirarka millimitirka ah. Cod-weyneyaasha korontada ku shaqeeya ee ku dhex jira aaladaha maalinlaha ah sida 5G casriga ah iyo meelaha isgaarsiinta satalaytka ayaa loo badinayaa in lagu dhisay substrate-kan. Anaga oo adeegsanayna tignoolajiyadayada “magdhowga lakabka buffer doping” ee iska leh, waxaanu hoos u dhignay cufnaanta micropipe ka hoos 0.5/cm² waxaana gaarnay luminta microwave-ka aadka u hooseeya ee 0.05 dB/mm.

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Tags Product

Xuduudaha farsamada

Walxaha	Tilmaamid	Walxaha	Tilmaamid
Dhexroorka	150± 0.2 mm	Hore (Si-wejiga) qallafsanaanta	Ra≤0.2 nm (5μm×5μm)
Noocyo badan	4H	Cidhifka cidhifka ah, xoqan, dildilaaca (kormeer muuqaal ah)	Midna
iska caabin	≥1E8 Ω·cm	TTV	≤5 μm
Lakabka wareejinta Dhumucda	≥0.4 μm	Warp	≤35 μm
Madhan (2mm>D>0.5mm)	≤5 ea/Wafer	Dhumucda	500± 25 μm

Astaamaha Muhiimka ah

1. Waxqabadka Soo noqnoqoshada Sare ee Gaarka ah
Substrate-ka isku dhafan ee 6-inch semi-insulating SiC wuxuu shaqaaleeyaa naqshad lakabka dielectric ah oo la darajeeyey, hubinta kala duwanaanshaha dielectric joogto ah ee <2% gudaha Ka-band (26.5-40 GHz) iyo hagaajinta joogtaynta wajiga 40%. 15% korodhka hufnaanta iyo 20% isticmaalka tamarta hoose ee qaybaha T/R ee isticmaalaya substrate-kan.

2. Horumarka Maareynta kulaylka
Qaab dhismeed isku dhafan oo "buundada kulaylka" gaar ah ayaa awood u siinaysa kulaylka dambe ee 400 W/m·K. 28 GHz 5G saldhigga PA modules, heerkulka isgoysku wuxuu kor u kacaa kaliya 28 ° C ka dib 24 saacadood oo hawlgal joogto ah — 50°C ayaa ka hooseeya xalalka caadiga ah.

3. Tayada Wafer Sare
Habka Gaadiidka Uumiga Jirka (PVT) ee la hagaajiyay, waxaan ku gaareynaa cufnaanta kala-baxa <500/cm² iyo Isku-duwanaanta Dhumucda guud (TTV) <3 μm.
4. Wax-soo-saar-Socod-samayn saaxiibtinimo leh
Nidaamkeena ciribtirka laysarka ee si gaar ah loogu sameeyay 6-inch semi-insulating SiC substrate composite substrate waxay yaraynaysaa cufnaanta gobolka laba amar oo waaweyn ka hor epitaxy.

Codsiyada ugu muhiimsan

1. 5G Qaybaha Saldhigga Saldhigga
Isku xirka anteenooyinka Massive MIMO, aaladaha GaN HEMT ee 6-inch substrate-insulating SiC substrates waxay ku gaadhaan awood wax soo saar 200W iyo> 65% hufnaan. Tijaabooyinka goobta ee 3.5 GHz waxay muujiyeen 30% korodhka radius caymis.

2. Nidaamyada Isgaarsiinta Satelite-ka
Dhul-hooseeya orbit (LEO) satellite transceivers isticmaalaya substrate-kan ayaa muujinaya 8 dB sare EIRP ee Q-band (40 GHz) iyada oo la dhimay miisaanka 40%. Terminalka SpaceX Starlink ayaa u qaatay wax soo saar ballaaran.

3. Nidaamyada Raadaarka Militariga
Qaybaha radar-array-ga ee T/R ee substrate-kan waxay gaadhaan 6-18 GHz bandwidth iyo tirada sanqadh sida ugu hoosaysa 1.2 dB, taas oo kordhinaysa qiyaasta 50 km ee nidaamyada digniinta hore.

4. Raadaarka Mawjada Millimeter-ka Gawaadhida ah
Chips radar automotive 79 GHz isticmaalaya substrate-kan waxay hagaajinayaan xallinta xagasha ilaa 0.5°, iyagoo buuxinaya shuruudaha darawalnimada ee L4.

Waxaan bixinaa xal adeeg oo dhamaystiran oo la habeeyey oo loogu talagalay 6-inch substrates-ka isku jira ee SiC Marka la eego habaynta cabbirrada walxaha, waxaanu taageernaa nidaaminta saxda ah ee iska caabinta inta u dhaxaysa 10⁶-10¹⁰ Ω·cm. Gaar ahaan codsiyada militariga, waxaan ku siin karnaa ikhtiyaar iska caabin aad u sarreeya oo>10⁹ Ω·cm. Waxay bixisaa saddex qeexitaan dhumucdiisuna tahay 200μm, 350μm iyo 500μm isku mar, iyadoo dulqaadka si adag loo xakameeyo gudahood ± 10μm gudahood, buuxinta shuruudaha kala duwan ee qalabka-soo noqnoqda sare codsiyada awood sare.

Marka la eego hababka daaweynta dusha sare, waxaan bixinaa laba xalal xirfadeed: Polishing Mechanical Mechanical (CMP) waxay ku gaari kartaa heerka atomikada ee dusha sare ee Ra<0.15nm, buuxinta shuruudaha koritaanka epitaxial ee ugu baahida badan; Tignoolajiyada daawaynta dusha sare ee diyaarsan ee epitaxial ee baahida wax soo saarka degdega ah waxay ku siin kartaa sagxad aad u jilicsan oo leh Sq<0.3nm iyo dhumucda oksaydhka hadhaaga ah <1nm, taasoo si weyn u fududaynaysa habka daawaynta ka hor dhamaadka macmiilka.

XKH waxay siisaa xalal dhammaystiran oo la habeeyey oo loogu talagalay 6-inch substrate-ku-salaysan SiC

1. Habaynta Qalabka Qalabka
Waxaanu bixinaa hagaajinta iska caabbinta saxda ah oo u dhaxaysa 10⁶-10¹⁰ Ω·cm, oo leh ikhtiyaaro iska caabin aad u sarreeya oo khaas ah>10⁹ Ω·cm oo diyaar u ah codsiyada militariga/aerospace.

2. Tilmaamaha Dhumucda
Saddex ikhtiyaar oo dhumucdiisuna tahay halbeeg:

· 200μm (lagu hagaajiyay aaladaha soo noqnoqda)

350μm (qeexitaanka caadiga ah)

500μm (loogu talagalay codsiyada awooda sare leh)
Dhammaan noocyada kala duwani waxay ilaalinayaan dulqaadka dhumucda dhumucda ±10μm.

3. Farsamooyinka Daaweynta Dusha sare

Polishing Mechanical Chemical (CMP): Waxay ku gaadhaa fidsanaanta heerka atomiiga ee Ra<0.15nm, oo buuxinaysa shuruudaha kobaca epitaxial adag ee RF iyo aaladaha korantada.

4. Habaynta dusha sare ee Epi- diyaarsan

Waxay keentaa sagxad aad u jilicsan oo leh Sq<0.3nm qalafsanaan

· Waxay xakamaysaa dhumucda oksaydhka gudaha <1nm

Waxay baabi'isaa ilaa 3 tillaabo oo hore u habayn ah oo lagu sameeyo xarumaha macaamiisha