6 gudaha Silicon Carbide 4H-SiC Semi-Insulating Ingot, Fasalka Dummy

6 gudaha Silicon Carbide 4H-SiC Semi-Insulating Ingot, Sawirka Dummy Fasalka

Sharaxaad Gaaban:

Silicon Carbide (SiC) ayaa wax ka beddelaysa warshadaha semiconductor, gaar ahaan awoodda sare, soo noqnoqoshada sare, iyo codsiyada u adkaysta shucaaca. 6-inch 4H-SiC ingot semi-insulating ingot, oo lagu bixiyo fasalka dummy, waa shay lagama maarmaan u ah hab-samaynta, cilmi-baarista, iyo hababka cabbirka. Iyada oo leh badhan ballaaran, kulaylka kuleylka aadka u wanaagsan, iyo xoogga farsamada, ingot-kani wuxuu u adeegaa sidii ikhtiyaar qiimo leh oo loogu talagalay tijaabinta iyo hagaajinta habka iyada oo aan waxyeello u geysan tayada aasaasiga ah ee looga baahan yahay horumarinta horumarsan. Alaabtani waxay u adeegtaa codsiyo kala duwan, oo ay ku jiraan korantada elektiroonigga ah, aaladaha-radio-frequency (RF), iyo optoelectronics, taasoo ka dhigaysa qalab qiimo leh oo loogu talagalay warshadaha iyo xarumaha cilmi-baarista.

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Faahfaahinta Alaabta

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Guryaha

1. Qalabka Jirka iyo Dhismaha
●Qaabka: Silicon Carbide (SiC)
●Polytype: 4H-SiC, qaab-dhismeedka crystal-ka
● Dhexroorka: 6 inji (150 mm)
● Dhumucdi: La isku hagaajin karo (5-15 mm sida caadiga ah darajada dhumucda)
● Hanuuninta Crystal:
oPrimary: [0001] (C-diyaarad)
Ikhtiyaarada sare: dhidibka ka baxsan 4° ee korniinka epitaxial ee la hagaajiyay
● Hanuuninta Flat Aasaasiga ah: (10-10) ± 5°
● Hanuuninta dabaqa sare: 90° kasoo horjeeda saacada

2. Guryaha Korontada
● iska caabin:
oSemi-insulating (> 106 ^ 66 Ω·cm), ku habboon in la yareeyo awoodda dulin.
●Nooca Doping:
Si aan ula kac ahayn loo sameeyay, taasoo keentay iska caabin koronto oo sarreeya iyo xasilloonida xaaladaha kala duwan ee hawlgalka.

3. Guryaha kulaylka
●Waxqabadka kulaylka: 3.5-4.9 W/cm · K, awood u yeelashada kulaylka waxtarka leh ee nidaamyada awoodda sare leh.
●Isku-balaadhinta kulaylka: 4.2×10−64.2 \ times 10^{-6}4.2×10−6/K, hubinta xasiloonida cabbirka inta lagu jiro habaynta heerkulka sare.

4. Qalabka indhaha
●Bandgap: gaab ballaadhan oo ah 3.26 eV, taas oo u oggolaanaysa in lagu shaqeeyo heerkul sare iyo koronto.
●Transparency: Daah-furnaan sare oo UV ah iyo mowjadaha dhaadheer ee muuqda, faa'iido u leh baaritaanka optoelectronic.

5. Guryaha Makaanikada
● Adag: Miisaanka Mohs 9, oo ka xiga dheeman, hubinta adkeysiga inta lagu jiro habaynta.
Cufnaanta cilladaysan:
o Lagu maamulo cilladaha ugu yar ee macro, hubinta tayada ku filan codsiyada fasalka-cajiibka ah.
●Balaash: Midnimo leh weecsanaan

Halbeegga	Faahfaahin	Unug
Darajo	Dummy Fasalka
Dhexroorka	150.0 ± 0.5	mm
Hanuuninta Wafer	dhidibka: <0001> ± 0.5°	shahaado
Iska caabin koronto	> 1E5	Ω·cm
Hanuuninta Flat Primary	{10-10} ± 5.0°	shahaado
Dhererka Guriga aasaasiga ah	Darajo
Dildilaaca (Baaritaanka Iftiinka Xoogga Sare)	<3 mm oo radial ah	mm
Hex Plates (Baaritaanka Iftiinka Xoogga Sare)	Aagga isugeynta ≤ 5%	%
Qaybaha Kala Duwan (Baaritaanka Iftiinka Xoogga Sare)	Aagga isugeynta ≤ 10%	%
Cufnaanta Dheef-yar	< 50	cm-2^-2-2
Chipping Edge	3 waa la oggol yahay, mid kasta ≤ 3 mm	mm
Ogow	Dhumucda wafer-jeexa <1 mm,> 70% (marka laga reebo labada daraf) buuxi shuruudaha sare

Codsiyada

1. Prototyping and Research
Dumi-fasalka 6-inch 4H-SiC ingot waa shay ku habboon samaynta iyo cilmi-baarista, u oggolaanaya soo-saareyaasha iyo shaybaarrada:
●Tijaabi cabbirada habka uumiga Kiimikada (CVD) ama Dhigista Uumiga Jirka (PVD).
●Horumar iyo sifayn sixitaan, turxaan bixin, iyo farsamooyinka wax lagu jarjaro.
●Sahaminta naqshadaha aaladaha cusub ka hor inta aadan u gudbin walxaha heerka-soo-saarka.

2. Qalabaynta iyo Tijaabada
Guryaha-dahaarka leh ayaa ka dhigaya tan mid qiimo leh:
●Qiimaynta iyo cabbirida sifooyinka korantada ee aaladaha awooda sare iyo kuwa soo noqnoqda.
●Isku-yeelaynta xaaladaha shaqada ee MOSFETs, IGBTs, ama diodes ee goobaha tijaabada.
● U adeegida sidii beddel wax ku ool ah oo lagu beddelayo substrate-ka nadiifka sare ah inta lagu jiro horumarka heerka hore.

3. Korontada Elektarooniga ah
Dhaqdhaqaaqa kulaylka sare iyo sifooyinka ballaaran ee bandgap ee 4H-SiC waxay awood u siineysaa hawl-qabad hufan oo koronto ah, oo ay ku jiraan:
●Sabadaha korantada ee korantada sare.
●Baabuurka korantada (EV) rogayaasha.
●Nidaamka tamarta la cusboonaysiin karo, sida rogayaasha qoraxda iyo marawaxadaha dabaysha.

4. Codsiyada Joogtada Raadiyaha (RF).
4H-SiC khasaare koronto yar iyo dhaqdhaqaaqa sare ee elektiroonigga ah ayaa ka dhigaya mid ku habboon:
● amplifiers RF iyo transistors ee kaabayaasha isgaarsiinta.
●Nidaamka radar-sare ee hawada sare iyo codsiyada difaaca.
●Qaybaha shabakada wireless-ka ee tiknoolajiyada 5G ee soo baxaya.

5. Qalabka Shucaaca-iska-caabbinta
Sababtoo ah iska caabbinta dabiiciga ah ee cilladaha shucaaca, 4H-SiC-dahaarka-hoosaadka ayaa ku habboon:
●Qalabka sahaminta booska, oo ay ku jiraan qalabka elektiroonigga ee dayax-gacmeedka iyo nidaamyada korontada.
●Alaabada elektarooniga ah ee shucaaca adag ee la socodka iyo xakamaynta nukliyeerka.
● Codsiyada difaaca ee u baahan adkeysi deegaan aad u daran.

6. Optoelectronics
Daah-furnaanta indhaha iyo bandgap ballaaran ee 4H-SiC waxay awood u siineysaa isticmaalkeeda:
● Sawir-qaadayaasha UV iyo LED-yada awoodda sare leh.
●Tijaabinta dahaarka indhaha iyo daawaynta dusha sare.
●Ka-hortagga qaybaha indhaha ee dareemayaasha horumarsan.

Faa'iidooyinka Qalabka Dummy-Grade

Waxtarka Qiimaha:
Darajada cidhiidhiga ahi waa beddelka la awoodi karo marka loo eego cilmi-baarista ama agabka-soosaarka, taasoo ka dhigaysa mid ku habboon tijaabinta joogtada ah iyo habraaca sifaynta.

Habaynta:
Cabirrada la isku halayn karo iyo hanuuninta kristanta waxay xaqiijiyaan waafaqid codsiyo kala duwan.

Miisaanka:
Dhexroorka 6-inji wuxuu la jaan qaadayaa heerarka warshadaha, taas oo u oggolaanaysa miisaan la'aan habraacyada heerka-soo-saarka.

Adag:
Awoodda farsamada sare iyo xasilloonida kulaylka ayaa ka dhigaysa wax-soo-saarka mid waara oo la isku halayn karo iyadoo lagu jiro xaalado tijaabo oo kala duwan.

Kala duwanaansho:
Ku haboon warshado badan, laga bilaabo nidaamyada tamarta ilaa isgaarsiinta iyo optoelectronics.

Gabagabo

6-inch Silicon Carbide (4H-SiC) ingot nus-insulating ingot, fasalka dummy, waxay bixisaa madal la isku halayn karo oo la isku halayn karo oo cilmi baarista, prototyping, iyo tijaabinta ee qaybaha teknoolajiyada gees-goynta. Kuleylkeeda gaarka ah, koronto, iyo qalabkeeda farsamada, oo ay weheliso la awoodi karo iyo wax-ka-beddeliddeeda, waxay ka dhigtaa walxo lagama maarmaan u ah tacliinta iyo warshadaha labadaba. Laga soo bilaabo korantada elektiroonigga ah ilaa nidaamyada RF iyo aaladaha shucaaca-adag, ingot-kani wuxuu taageeraa hal-abuurnimo heer kasta oo horumarineed.
Faahfaahin dheeraad ah oo faahfaahsan ama si aad u codsato xigasho, fadlan nala soo xiriir si toos ah. Kooxdayada farsamada ayaa diyaar u ah inay ku caawiyaan xalalka loo habeeyey si ay u buuxiyaan shuruudahaaga.