6 ee Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade

Sharaxaad Gaaban:

Silicon Carbide (SiC) waxay kacaan ku samaynaysaa warshadaha semiconductor-ka, gaar ahaan codsiyada awoodda sare leh, kuwa soo noqnoqda sare leh, iyo kuwa u adkaysta shucaaca. Ingot-ka nus-daboolka ah ee 6-inji ah ee 4H-SiC, oo lagu bixiyo heer been abuur ah, waa agab lagama maarmaan u ah tijaabinta, cilmi-baarista, iyo hababka cabbiraadda. Iyada oo leh bandgap ballaaran, gudbin kuleyl oo aad u fiican, iyo adkeysi farsamo, ingot-kani wuxuu u adeegaa sidii ikhtiyaar kharash-ool ah oo loogu talagalay tijaabinta iyo hagaajinta habka iyada oo aan wax u dhimayn tayada aasaasiga ah ee looga baahan yahay horumarinta horumarsan. Badeecadani waxay u adeegtaa codsiyo kala duwan, oo ay ku jiraan elektaroonigga korontada, aaladaha soo noqnoqda raadiyaha (RF), iyo optoelectronics, taasoo ka dhigaysa qalab qiimo leh oo loogu talagalay warshadaha iyo hay'adaha cilmi-baarista.

Noo soo dir emayl

Astaamaha

Guryaha

1. Sifooyinka Jireed iyo Qaab-dhismeedka
● Nooca Qalabka: Silikoon Carbide (SiC)
● Nooc Boli ah: 4H-SiC, qaab-dhismeed kiristaal ah oo lix-geesood ah
● Dhexroorka: 6 inji (150 mm)
● Dhumucda: La habeyn karo (5-15 mm caadi ahaan heerka been abuurka ah)
● Jihaynta Kirismaska:
oPrimary: [0001] (C-diyaarad)
Ikhtiyaarada labaad: dhidibka ka baxsan 4° si loo hagaajiyo koritaanka epitaxial-ka
● Jihada Fidsan ee Aasaasiga ah: (10-10) ± 5°
● Jihada Fidsan ee Labaad: 90° dhanka ka soo horjeedka saacadda laga bilaabo guriga koowaad ± 5°

2. Sifooyinka Korontada
● Iska caabin:
oDaboolid nus-dabool ah (>106^66 Ω·cm), oo ku habboon yareynta awoodda dulinka.
● Nooca Daweynta:
o Si aan ula kac ahayn ayaa loo daweeyay, taasoo keenta iska caabin koronto oo sareysa iyo xasillooni xaalado kala duwan oo hawlgal ah.

3. Sifooyinka Kulaylka
●Qaadashada Kulaylka: 3.5-4.9 W/cm·K, taasoo suurtogalinaysa kala-baxa kulaylka ee wax ku oolka ah ee nidaamyada awoodda sare leh.
●Isku-darka Ballaarinta Kulaylka: 4.2×10−64.2 \jeer 10^{-6}4.2×10−6/K, taasoo hubinaysa xasilloonida cabbirka inta lagu jiro habaynta heerkulka sare.

4. Astaamaha Indhaha
●Bandgap: Balaadh ballaaran oo ah 3.26 eV, taasoo u oggolaanaysa shaqada iyadoo la adeegsanayo danab sare iyo heerkul sare.
●Daahfurnaan: Hufnaan sare oo u dhaxaysa UV iyo hirarka la arki karo, oo waxtar u leh tijaabinta optoelectronic.

5. Sifooyinka Farsamada
●Adkaanta: Miisaanka Mohs waa 9, oo ka dambeeya dheemanka, taasoo hubinaysa cimri dherer inta lagu jiro farsamaynta.
● Cufnaanta cilladaha:
o La xakameeyay cilladaha ugu yar ee macro, iyadoo la hubinayo tayo ku filan oo loogu talagalay codsiyada heerka-qalabka.
● Fidsanaan: Midnimo leh oo leh leexasho

Halbeegga	Faahfaahinta	Cutubka
Fasal	Fasalka Madow
Dhexroorka	150.0 ± 0.5	mm
Jihaynta Wafer-ka	Dhidibka dul saaran: <0001> ± 0.5°	shahaado
Iska caabinta Korontada	> 1E5	Ω·cm
Jihada Fidsan ee Aasaasiga ah	{10-10} ± 5.0°	shahaado
Dhererka Fidsan ee Aasaasiga ah	Qaylo-dhaan
Dildilaacyo (Baaritaanka Iftiinka Xoogga Badan)	< 3 mm gudaha radial	mm
Saxannada Hex (Baaritaanka Iftiinka Xoogga Sare leh)	Aagga wadarta ≤ 5%	%
Meelaha Nooca Badan (Baaritaanka Iftiinka Xoogga Badan)	Aagga wadarta ≤ 10%	%
Cufnaanta Tuubooyinka Yaryar	< 50	cm−2^-2−2
Jabinta geeska	3 la oggol yahay, midkiiba ≤ 3 mm	mm
Fiiro gaar ah	Dhumucda jarista wafer-ka < 1 mm, > 70% (marka laga reebo laba daraf) waxay buuxisaa shuruudaha kor ku xusan

Codsiyada

1. Samaynta iyo Cilmi-baarista
Ingot-ka 4H-SiC ee heerka 6-inji ah waa agab ku habboon tijaabinta iyo cilmi-baarista, taasoo u oggolaanaysa soo-saareyaasha iyo shaybaarrada inay:
●Xeerarka habka tijaabada ee Kaydinta Uumiga Kiimikada (CVD) ama Kaydinta Uumiga Jirka (PVD).
● Horumari oo hagaaji farsamooyinka xoqidda, nadiifinta, iyo jarista wafer-ka.
● Sahamin naqshadaha qalabka cusub ka hor inta aadan u gudbin agab heer wax soo saar ah.

2. Hagaajinta iyo Tijaabinta Qalabka
Sifooyinka semi-insulating-ka ayaa ka dhigaya ingot-kan mid qiimo leh:
●Qiimaynta iyo hagaajinta sifooyinka korontada ee aaladaha korontada sare leh iyo kuwa soo noqnoqda sare leh.
●Jilid xaaladaha hawlgalka ee MOSFET-yada, IGBT-yada, ama diode-yada ee goobaha tijaabada.
●U adeegidda sidii beddel kharash-ool ah oo loogu talagalay walxaha saafiga ah ee sarreeya inta lagu jiro horumarinta marxaladda hore.

3. Elektarooniga Korontada
Kontoroolka kulaylka sare iyo astaamaha bandgap ballaaran ee 4H-SiC waxay suurtogal ka dhigayaan hawlgal hufan oo ku saabsan elektaroonigga korontada, oo ay ku jiraan:
●Aaladaha korontada ee danab sare leh.
● Qalabka korontada ku shaqeeya (EV) ee baabuurta korontada ku shaqeeya.
●Nidaamyada tamarta la cusboonaysiin karo, sida kuwa tamarta qoraxda ku shaqeeya iyo kuwa dabaysha ku shaqeeya.

4. Codsiyada Soo Noqnoqoshada Raadiyaha (RF)
Khasaaraha dielectric-ga hooseeya ee 4H-SiC iyo dhaqdhaqaaqa elektaroonigga oo sarreeya ayaa ka dhigaya mid ku habboon:
●Amplifiers-ka RF iyo transistors-ka ee kaabayaasha isgaarsiinta.
● Nidaamyada radar-ka ee soo noqnoqda ee loogu talagalay codsiyada hawada sare iyo difaaca.
●Qaybaha shabakadaha bilaa-waayirka ah ee loogu talagalay teknoolojiyada 5G ee soo koraya.

5. Qalabka u adkaysta shucaaca
Iyada oo ay ugu wacan tahay iska caabbinta ay u leedahay cilladaha shucaaca keena, 4H-SiC oo ah dareere-dabool ah ayaa ku habboon:
●Qalabka sahaminta hawada sare, oo ay ku jiraan qalabka elektaroonigga dayax-gacmeedka iyo nidaamyada korontada.
●Electroonikada ku adag shucaaca ee loogu talagalay la socodka iyo xakamaynta nukliyeerka.
● Codsiyada difaaca ee u baahan adkeysi jawiyada adag.

6. Qalabka Elektarooniga ah
Hufnaanta indhaha iyo farqiga ballaaran ee 4H-SiC waxay suurtogal ka dhigaysaa isticmaalkeeda:
●Sawir-qaadayaasha UV-ga iyo LED-yada awoodda sare leh.
● Tijaabinta dahaarka indhaha iyo daawaynta dusha sare.
● Samaynta qaybaha indhaha ee loogu talagalay dareemayaasha horumarsan.

Faa'iidooyinka Qalabka Darajada Dummy-Fasalka ah

Waxtarka Kharashka:
Darajada been abuurka ah waa beddel la awoodi karo oo ka duwan cilmi-baarista ama agabka heerka wax-soo-saarka, taasoo ka dhigaysa mid ku habboon tijaabinta joogtada ah iyo hagaajinta habka.

Habayn:
Cabbirrada la hagaajin karo iyo jihooyinka kiristaalka ah waxay hubiyaan in la waafajin karo codsiyo kala duwan.

Cabbiraadda:
Dhexroorka 6-inji wuxuu la jaan qaadayaa heerarka warshadaha, taasoo u oggolaanaysa in si aan kala go 'lahayn loo kordhiyo hababka heerka wax soo saarka.

Adkaanta:
Xoogga farsamada sare iyo xasilloonida kulaylka ayaa ka dhigaya ingot mid waara oo la isku halleyn karo xaaladaha tijaabada ee kala duwan.

Kala duwanaansho:
Ku habboon warshado badan, laga bilaabo nidaamyada tamarta ilaa isgaarsiinta iyo qalabka elektaroonigga ah.

Gunaanad

Ingot-ka Silicon Carbide (4H-SiC) ee 6-inji ah (4H-SiC) ee nus-dabool ah, oo ah heer been abuur ah, wuxuu bixiyaa goob lagu kalsoonaan karo oo la isku halleyn karo oo loogu talagalay cilmi-baarista, tijaabinta, iyo tijaabinta qaybaha tiknoolajiyada casriga ah. Sifooyinkeeda kuleylka, korontada, iyo farsamada ee gaarka ah, oo ay weheliso qiimo jaban iyo habayn, ayaa ka dhigaya agab aan laga maarmi karin labadaba tacliinta iyo warshadaha. Laga bilaabo elektaroonigga korontada ilaa nidaamyada RF iyo aaladaha lagu adkeeyo shucaaca, ingot-kani wuxuu taageeraa hal-abuurka marxalad kasta oo horumar ah.
Wixii faahfaahin dheeraad ah ama aad codsanayso qiimeyn, fadlan si toos ah noola soo xiriir. Kooxdayada farsamada ayaa diyaar u ah inay kaa caawiyaan xalal loo habeeyey si loo daboolo baahiyahaaga.