50.8mm 2inch GaN oo saaran wafer sapphire Epi-lakabka

Sharaxaad Gaaban:

Sida jiilka seddexaad ee semiconductor, gallium nitride waxay leedahay faa'iidooyinka iska caabbinta heerkulka sare, waafaqid sare, kuleylka kuleylka sare iyo farqiga ballaaran. Sida laga soo xigtay agabyada kala duwan ee substrate, gallium nitride xaashida epitaxial waxaa loo qaybin karaa afar qaybood: gallium nitride ku salaysan gallium nitride, silicon carbide based gallium nitride, sapphire based gallium nitride iyo silicon based gallium nitride. Xaashida gallium nitride epitaxial ee silikon ku salaysan waa badeecada ugu badan ee la isticmaalo oo leh kharash wax soo saar yar iyo tignoolajiyada wax soo saarka bislaaday.

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Codsiga gallium nitride GaN xaashida epitaxial

Iyada oo ku saleysan waxqabadka gallium nitride, gallium nitride chips epitaxial chips ayaa inta badan ku habboon awood sare, soo noqnoqoshada sare, iyo codsiyada korantada hooseeya.

Waxay ka muuqataa:

1) Bandgap sare: Bandgap-ka sare wuxuu hagaajiyaa heerka korantada ee aaladaha gallium nitride wuxuuna soo saari karaa awood ka sareysa aaladaha gallium arsenide, kaas oo si gaar ah ugu habboon saldhigyada isgaarsiinta 5G, radar militari iyo goobo kale;

2) Waxtarka beddelka sare: iska caabbinta gallium nitride awoodda beddelka aaladaha elektiroonigga ah waa 3 amar oo ka hooseeya kan aaladaha silikon, taas oo si weyn u yareeyn karta luminta beddelka;

3) Dhaqdhaqaaqa kulaylka sare: heerkulka sare ee kuleylka gallium nitride wuxuu ka dhigayaa inuu leeyahay wax-qabad heer sare ah oo kuleyl ah, oo ku habboon wax soo saarka awoodda sare, heerkulka sare iyo qaybaha kale ee qalabka;

4) Burburinta xoogga goobta korantada: In kasta oo burburka xoogga beerta gallium nitride uu ku dhow yahay kan silikoon nitride, iyadoo ay ugu wacan tahay hannaanka semiconductor, is-waafajinta walxaha iyo arrimo kale, dulqaadka danab ee aaladaha gallium nitride caadi ahaan waa 1000V, iyo Danab isticmaalka badbaadada leh ayaa badanaa ka hooseeya 650V.

Shayga	GaN-TCU-C50	GaN-TCN-C50	GaN-TCP-C50
Cabirka	e 50.8mm ± 0.1mm
Dhumucda	4.5 ± 0.5 um		4.5 ± 0.5um
Hanuuninta	C-diyaarad(0001) ±0.5°
Nooca Habdhaqanka	N-nooca (Lama Laabin)	N-nooca (Si-doped)	Nooca P (Mg-doped)
Iska caabin (3O0K)	<0.5 Q・cm	<0.05 Q・cm	~ 10 Q・cm
Isku-xidhka Qaadista	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3	> 6x1016 cm^-3
Dhaqdhaqaaqa	~ 300 cm²/Vs	~ 200 cm²/Vs	~ 10 cm²/Vs
Cufnaanta Kala-baxa	In ka yar 5x10⁸cm^-2(waxaa xisaabiyay FWHMs ee XRD)
Qaab dhismeedka substrate	GaN on Sapphire (Heerka: SSP Xulashada: DSP)
Aagga Dusha La Isticmaali Karo	> 90%
Xidhmada	Baakad ahaan fasalka 100 ee deegaanka nadiifka ah, oo ku jira cajalado 25pcs ah ama weel keliya oo wafer ah, oo ku hoos jira jawi nitrogen ah.