4inch SiC Epi wafer oo loogu talagalay MOS ama SBD

Epitaxy waxa loola jeedaa korriinka lakabka tayada sare leh ee hal shay oo crystal ah oo ku yaal dusha sare ee substrate silikoon carbide. Waxaa ka mid ah, koritaanka gallium nitride epitaxial lakabka on substrate silicon carbide substrate-insulating waxaa loo yaqaan epitaxy heterogeneous; koritaanka lakabka silikoon carbide epitaxial ee dusha sare ee substrate silikoon carbide ah ayaa loo yaqaan epitaxy isku mid ah.

Epitaxial waxay la socotaa shuruudaha naqshadeynta qalabka ee koritaanka lakabka ugu muhiimsan ee shaqeynta, inta badan waxay go'aamisaa waxqabadka chip iyo qalabka, qiimaha 23%. Hababka ugu muhiimsan ee filimka khafiifka ah ee SiC marxaladdan waxaa ka mid ah: kaydinta uumiga kiimikada (CVD), molecular beam epitaxy (MBE), wajiga dareeraha epitaxy (LPE), iyo dhigista laser garaaca iyo sublimation (PLD).

Epitaxy waa xiriiriye aad muhiim u ah warshadaha oo dhan. Iyadoo la kordhinayo lakabyada GaN epitaxial substrates silikoon carbide semi-insulating, GaN epitaxial wafers oo ku salaysan silikoon carbide ayaa la soo saaray, kaas oo lagu sii samayn karo GaN RF qalabka sida transistor sare ee dhaqdhaqaaqa elektarooniga ah (HEMTs);

Iyada oo la kordhinayo lakabka silikoon carbide epitaxial substrate si aad u hesho wafer silikoon carbide epitaxial, iyo lakabka epitaxial ee soo saarista Schottky diodes, transistor-ka-saamaynta badhanka dahabiga ah, transistors-ka gate laba-cirifoodka iyo aaladaha kale ee awooda, sidaa darteed tayada epitaxial ee waxqabadka aaladda ayaa sidoo kale saameyn weyn ku leh horumarka aaladda.