Wafer 4 inji ah oo SiC Epi ah oo loogu talagalay MOS ama SBD

Epitaxy waxaa loola jeedaa koritaanka lakabka walax keli ah oo tayo sare leh oo ku taal dusha sare ee substrate silicon carbide. Kuwaas waxaa ka mid ah, koritaanka lakabka epitaxial ee gallium nitride ee substrate silicon carbide nus-insulating waxaa loo yaqaan epitaxy heterogeneous; koritaanka lakabka epitaxial ee silicon carbide ee dusha sare ee substrate silicon carbide ah oo gudbiya waxaa loo yaqaan epitaxy isku mid ah.

Epitaxial waxay waafaqsan tahay shuruudaha naqshadeynta qalabka ee koritaanka lakabka shaqada ugu weyn, waxayna inta badan go'aamisaa waxqabadka jajabka iyo qalabka, qiimaha 23%. Hababka ugu muhiimsan ee epitaxy-ga filimka khafiifka ah ee SiC marxaladdan waxaa ka mid ah: dhigista uumiga kiimikada (CVD), epitaxy-ga molecular beam epitaxy (MBE), epitaxy-ga wajiga dareeraha ah (LPE), iyo dhigista laysarka ee pulsed iyo sublimation (PLD).

Epitaxy waa isku xir aad muhiim u ah warshadaha oo dhan. Iyadoo la kordhinayo lakabyada epitaxial ee GaN ee ku yaal substrate-ka carbide-ka ee silikoon-ka ah ee nus-insulating, waxaa la soo saaraa wafer-yada epitaxial ee GaN oo ku salaysan carbide-ka silikoon, kuwaas oo loo sii samayn karo aaladaha GaN RF sida transistors-ka dhaqdhaqaaqa elektaroonigga sare (HEMTs);

Iyada oo la kobcinayo lakabka epitaxial ee silicon carbide ee substrate-ka si loo helo wafer-ka epitaxial ee silicon carbide, iyo lakabka epitaxial ee soo saarista diode-yada Schottky, transistors-ka saamaynta badh-goobta dahabka-oxygen, transistors-ka albaabka laba-geesoodka ah ee dahaaran iyo aaladaha kale ee awoodda, sidaa darteed tayada epitaxial-ka ee waxqabadka qalabka ayaa aad u saameyn weyn ku leh horumarinta warshadaha ayaa sidoo kale door aad muhiim u ah ka ciyaaraya.