4inch SiC Epi wafer oo loogu talagalay MOS ama SBD

4inch SiC Epi wafer oo loogu talagalay MOS ama Sawirka SBD

Sharaxaad Gaaban:

SiCC waxay haysataa khad wax soo saar substrate wafer ah oo dhamaystiran oo SiC (Silicon Carbide), isku xidha korriinka korriinka, wafer-samaynta, samaynta maraq, dhalaalid, nadiifin iyo tijaabin. Waqtigan xaadirka ah, waxaan ku siin karnaa axial ama off-dhidibka semi-insulating iyo semi-conductive 4H iyo 6H SiC wafers oo leh cabbirro 5x5mm2, 10x10mm2, 2 ", 3" , 4 "iyo 6", jebinta xakamaynta cilladda, farsamaynta abuur crystal iyo kobaca degdega ah iyo kuwa kale Waxay jebisay iyada oo loo marayo tiknoolajiyada muhiimka ah sida xakamaynta cilladaha, farsamaynta abuurka crystal iyo koritaanka degdegga ah, waxayna kor u qaaday cilmi-baarista aasaasiga ah iyo horumarinta epitaxy silicon carbide epitaxy, qalabka iyo cilmi-baarista aasaasiga ah ee kale ee la xidhiidha.

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Epitaxy waxa loola jeedaa korriinka lakabka tayada sare leh ee hal shay oo crystal ah oo ku yaal dusha sare ee substrate silikoon carbide. Waxaa ka mid ah, koritaanka gallium nitride epitaxial lakabka on substrate silicon carbide substrate-insulating waxaa loo yaqaan epitaxy heterogeneous; koritaanka lakabka silikoon carbide epitaxial ee dusha sare ee substrate silikoon carbide ah ayaa loo yaqaan epitaxy isku mid ah.

Epitaxial waxay la socotaa shuruudaha naqshadeynta qalabka ee koritaanka lakabka ugu muhiimsan ee shaqeynta, inta badan waxay go'aamisaa waxqabadka chip iyo qalabka, qiimaha 23%. Hababka ugu muhiimsan ee filimka khafiifka ah ee SiC marxaladdan waxaa ka mid ah: kaydinta uumiga kiimikada (CVD), molecular beam epitaxy (MBE), wajiga dareeraha epitaxy (LPE), iyo dhigista laser garaaca iyo sublimation (PLD).

Epitaxy waa xiriiriye aad muhiim u ah warshadaha oo dhan. Iyadoo la kordhinayo lakabyada GaN epitaxial substrates silikoon carbide semi-insulating, GaN epitaxial wafers oo ku salaysan silikoon carbide ayaa la soo saaray, kaas oo lagu sii samayn karo GaN RF qalabka sida transistor sare ee dhaqdhaqaaqa elektarooniga ah (HEMTs);

By koraya lakabka silikoon carbide epitaxial on substrate conductive si aad u hesho wafer silikoon carbide epitaxial, iyo in lakabka epitaxial on wax soo saarka ee diodes Schottky, transistor-field saamayn dahab-oxygen badhkii transistors, transistor iridda dahaaran iyo qalab kale oo awood, sidaas tayada epitaxial ee waxqabadka qalabku waa mid aad u weyn oo saameyn ku leh horumarinta warshadaha ayaa sidoo kale ciyaaraya door aad u muhiim ah.