4inch 6inch 8inch SiC Crystal Growth Furnace ee Geedi socodka CVD

4inch 6inji 8inch SiC Crystal Growth Furnace ee Habka CVD Sawirka

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XKH's SiC Crystal Growth Furnace CVD Nidaamka Dhigista Uumiga Kiimikada waxay shaqaaleysiisaa tignoolajiyada dhigista uumiga kiimikaad ee hogaaminaysa aduunka, si gaar ah loogu talagalay tayada sare ee SiC kobaca hal crystal. Iyada oo loo marayo xakamaynta saxda ah ee cabbirrada habka oo ay ku jiraan socodka gaaska, heerkulka iyo cadaadiska, waxay awood u siinaysaa kobaca kristal ee SiC ee 4-8 inch substrates. Nidaamkan CVD wuxuu soo saari karaa noocyo kala duwan oo SiC crystal ah oo ay ku jiraan nooca 4H / 6H-N iyo nooca 4H / 6H-SEMI, oo bixiya xalal dhamaystiran oo ka yimaada qalabka ilaa hababka. Nidaamku wuxuu taageeraa shuruudaha kobaca ee 2-12 inch wafers, taasoo ka dhigaysa mid si gaar ah ugu habboon wax soo saarka ballaaran ee korontada iyo qalabka RF.

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Astaamaha

Mabda'a Shaqada

Mabda'a asaasiga ah ee nidaamkayaga CVD wuxuu ku lug leeyahay kuleylka kuleylka ee silikoon ka kooban (tusaale, SiH4) iyo kaarboon-ka kooban (tusaale, C3H8) gaasaska horudhaca ah ee heerkulka sare (sida caadiga ah 1500-2000 ° C), dhigista SiC hal kiristaalo on substrates iyada oo loo marayo falcelinta kiimikada wajiga-gaaska. Tignoolajiyadani waxay si gaar ah ugu habboon tahay inay soo saarto nadiif-sare (> 99.9995%) 4H/6H-SiC hal kiristaalo oo leh cufnaanta cilladaha hooseeya (<1000/cm²), buuxinta shuruudaha walxaha adag ee korantada elektiroonigga ah iyo aaladaha RF. Iyada oo loo marayo xakamaynta saxda ah ee ka kooban gaaska, heerka socodka iyo heerkulka heerkulka, nidaamku wuxuu awood u siinayaa nidaaminta saxda ah ee nooca conductivity crystal (nooca N/P) iyo iska caabinta.

Noocyada Nidaamka iyo Hababka Farsamada

Nooca Nidaamka	Kala duwanaanta heerkulka	Astaamaha Muhiimka ah	Codsiyada
Heerkul Sare CVD	1500-2300°C	Kuleylinta induction graphite, ± 5°C isku mid ahaanshaha heerkulka	Kobaca SiC ee buk
Kulul-Filament CVD	800-1400°C	Kuleylinta Fila Tungsten, 10-50μm/h heerka dhigista	SiC epitaxy qaro weyn
VPE CVD	1200-1800°C	Xakamaynta heerkulka aaga badan,>80% isticmaalka gaaska	Wax soo saarka epi-wafer ee baaxadda leh
PECVD	400-800°C	Balaasmaha oo la wanaajiyey, 1-10μm/h heerka dhigista	filimaanta khafiifka ah ee SiC-ku-hooseeya

Tilmaamaha Farsamada ee Muhiimka ah

1. Nidaamka Xakamaynta Heerkulka Sare
Foornadu waxay leedahay nidaam kuleyl iska caabin ah oo dhowr aag ah oo awood u leh ilaalinta heerkulka ilaa 2300 ° C oo leh ± 1 ° C isku mid ah dhammaan qolka koritaanka. Maareynta kuleylka saxda ah waxaa lagu gaaraa:
12 aagagga kuleyliyaha si madaxbanaan loo maamulo.
Korjoogteynta thermocouple oo dheeraad ah (Nooca C W-Re).
Algorithms-ka hagaajinta profile-kulka-waqtiga dhabta ah.
Darbiyada qolka biyaha lagu qaboojiyey ee xakamaynta qulqulka kulaylka.

2. Gaadhista Gaaska iyo Farsamada Isku-dhafka
Nidaamkeena qaybinta gaaska gaarka ah ayaa hubiya isku darka horudhaca ugu wanagsan iyo gaarsiinta labbiska ah:
Xakamaynta qulqulka tirada badan oo leh ± 0.05sccm sax ah.
Duritaan gaas badan oo dhibco badan
Korjoogteynta ka kooban gaaska goobta-guud (FTIR spectroscopy).
Magdhawga qulqulka tooska ah inta lagu jiro wareegyada koritaanka.

3. Kobcinta tayada Crystal
Nidaamku wuxuu ku daraa dhowr cusub oo cusub si loo horumariyo tayada crystal:
Haysta substrate-ka wareegeysa (0-100rpm la barmaamij karo).
Farsamada xakamaynta lakabka xuduudaha horumarsan.
Nidaamka la socodka cilladda goobta ku jirta (UV laser firdhinta).
Magdhawga cadaadiska tooska ah inta lagu jiro koritaanka.

4. Habka Automation-ka iyo Xakamaynta
Fulinta cunto karinta si toos ah oo toos ah.
Hagaajinta qiyaasta kobaca waqtiga-dhabta ah ee AI.
Kormeerka fog iyo ogaanshaha.
In ka badan 1000+ kaydinta xogta cabbirka (la kaydiyay 5 sano).

5. Tilmaamaha Badbaadada iyo Kalsoonida
Ilaalinta kulaylka badan ee saddex-laaban.
Nidaamka nadiifinta degdega ah ee tooska ah.
Naqshad dhismeed lagu qiimeeyay seismic.
98.5% damaanad qaadka wakhtiga.

6. Naqshad la qiyaasi karo
Naqshadaynta qaab-dhismeedka waxay ogolaataa kor u qaadida awoodda.
La jaanqaadi kara cabbirrada waferka 100mm ilaa 200mm.
Waxay taageertaa isku xidhka toosan iyo midka toosan labadaba.
Qaybaha isbeddelka degdega ah ee dayactirka.

7. Waxtarka Tamarta
30% isticmaalka tamarta hoose marka loo eego nidaamyada la barbar dhigo.
Nidaamka soo kabashada kulaylku wuxuu qabtaa 60% kulaylka qashinka.
Algorithms isticmaalka gaaska la hagaajiyay.
Shuruudaha xarunta LEED-waafaqsan.

8. Waxkabadalka maadiga
Kora dhammaan noocyada kala duwan ee SiC ee waaweyn (4H, 6H, 3C).
Waxay taageertaa kala duwanaanshiyaha korantada iyo kuwa-dahaarka ah labadaba.
Waxay qabataa qorshayaal doping oo kala duwan (N-nooca, nooca P).
La jaanqaadi kara horu-yaasha kale (tusaale, TMS, TES).

9. Waxqabadka Nidaamka Vacuum
Cadaadiska salka: <1×10⁻ Torr
Heerka daadinta: <1×10⁻ Torr·L/sek
Xawaaraha bamgareynta: 5000L/s (SiH₄)

Xakamaynta cadaadiska tooska ah inta lagu jiro wareegyada koritaanka
Tilmaantan farsamo ee dhamaystiran waxay tusinaysaa awooda nidaamkeena si loo soo saaro darajada cilmi-baadhista iyo tayada wax soo saarka ee SiC oo leh joogteynta hogaaminta warshadaha iyo waxsoosaarka. Isku darka xakamaynta saxda ah, kormeerka sare, iyo injineernimada adag ayaa ka dhigaysa nidaamkan CVD doorashada ugu fiican ee R&D iyo codsiyada wax soo saarka mugga ee korantada korantada, aaladaha RF, iyo codsiyada kale ee semiconductor ee horumarsan.

Faa'iidooyinka Muhiimka ah

1. Kobaca Crystal-Tayada Sare
• Cufnaanta cilladda ugu hooseysa <1000/cm² (4H-SiC)
• Labbiska wax-ka-qaadista <5%
• Nadiifinta Crystal>99.9995%

2. Awood Wax-soo-saar-weyn
• Waxay taageertaa ilaa 8-inch korriinka waferka
Labbiska dhexroorka>99%
• Kala duwanaanshiyaha dhumucda <± 2%

3. Xakamaynta Habka saxda ah
• Saxnaanta xakamaynta heerkulka ±1°C
• Saxnaanta xakamaynta socodka gaaska ± 0.1sccm
• Xaqiijinta xakamaynta cadaadiska ± 0.1Torr

4. Waxtarka Tamarta
• 30% tamar ka waxtar badan hababka caadiga ah
• Heerka kobaca ilaa 50-200μm/h
• Waqtiga qalabka>95%

Codsiyada Muhiimka ah

1. Qalabka Elektarooniga ah ee Korontada
6-inch 4H-SiC substrates ee 1200V+ MOSFETs/diodes, hoos u dhigista khasaaraha 50%.

2. Isgaarsiinta 5G
Qaybaha SiC-da-daahiyaha ah (iska-caabbinta>10⁸Ω·cm) ee saldhigga PAs, oo leh luminta galinta <0.3dB at>10GHz.

3. Baabuurta Tamarta Cusub
Qaybaha korantada ee darajada baabuurta ee SiC waxay kordhiyaan kala duwanaanshaha EV 5-8% waxayna yareeyaan wakhtiga dallacaadda 30%.

4. Inverters PV
Substrate-ka cilladda yar ayaa kor u qaada waxtarka beddelka ee ka sarreeya 99% halka ay yareeyaan cabbirka nidaamka 40%.

Adeegyada XKH

1. Adeegyada Habaynta
Nidaamyada CVD ee 4-8 inji ah oo ku habboon.
Waxay taageertaa kobaca nooca 4H/6H-N, 4H/6H-SEMI nooca dahaadhka ah, iwm.

2. Taageerada Farsamada
Tababar dhamaystiran oo ku saabsan hawlgalka iyo hagaajinta habka.
24/7 jawaab farsamo.

3. Turnkey Solutions
Dhamaadka-ilaa-dhamaadka adeegyada laga bilaabo rakibaadda ilaa habsocodka ansixinta.

4. Alaabta
2-12 inch substrates SiC/epi-wafers ayaa diyaar ah.
Waxay taageertaa noocyada 4H/6H/3C.

Kala soociyaasha muhiimka ah waxaa ka mid ah:
Ilaa 8-inch awoodda koritaanka crystal.
20% ka dhakhso badan heerka kobaca celceliska warshadaha.
98% isku halaynta nidaamka.
Xidhmada nidaamka xakamaynta garaadka buuxa.