4H-semi HPSI 2inch SiC substrate wafer wafer Wax soo saarka heerka cilmi baarista
Substrate-ka silikoon carbide substrate-ka-dahaaran ee SiC
Substrate-ka Silicon carbide waxaa inta badan loo kala qaybiyaa nooca korantada iyo nus-insulating, substrate-ka silikoon carbide ee nooca n-nooca waxaa inta badan loo isticmaalaa LED-ka-ku-saleysan Epitaxial iyo aaladaha kale ee optoelectronic, aaladaha korantada ee SiC-ku-saleysan, iwm, iyo semi- Dahaarka SiC silikon carbide substrate waxaa inta badan loo isticmaalaa soo saarista epitaxial ee aaladaha soo noqnoqda raadiyaha tamarta sare leh ee GaN. Intaa waxaa dheer, saafiga sare ee dahaadhka ah ee HPSI iyo SI semi-dahaarka ayaa ka duwan, saafiga sare-sare ee dahaadhka side-insulation-ka 3.5 * 1013 ~ 8 * 1015/cm3 kala duwan, oo leh dhaqdhaqaaqa elektarooniga sare; Semi-dahaarka waa maaddooyin iska caabin ah oo sarreeya, iska caabintu aad bay u sarraysaa, guud ahaan waxaa loo isticmaalaa substrates-ka aaladda mikrowave-ka, aan shaqaynayn.
Substrate-ka hoose ee Silicon Carbide-dahaaran ee SiC wafer
Qaab dhismeedka kristal ee SiC wuxuu go'aamiyaa jirkiisa, marka loo eego Si iyo GaAs, SiC waxay u leedahay sifooyinka jirka; Baaxadda band ee mamnuuca ah waa mid weyn, oo ku dhow 3 jeer ka Si, si loo hubiyo in qalabku ku shaqeeyo heerkul sare oo hoos yimaada kalsoonida muddada-dheer; xoogga beerta burburku waa mid sare, waa 1O jeer ka mid ah Si, si loo hubiyo in awoodda danab qalabka, hagaajin qiimaha danab qalabka; heerka korantada korantada waa weyn yahay, waa 2 jeer ka Si, si loo kordhiyo inta jeer ee aaladda iyo cufnaanta awoodda; Heerarka kuleylku waa sarreeyaa, in ka badan Si, qulqulka kulaylku waa sarreeyaa, koorsada kulaylka ayaa sarreeya, ka-hortagga kuleylka ayaa sarreeya, ka badan Si, kuleylka kuleylka ayaa sarreeya. Dhaqdhaqaaqa kulaylka sare, in ka badan 3 jeer ka Si, kordhinta awoodda kulaylka ee qalabka iyo xaqiijinta yaraynta qalabka.
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