4H-semi HPSI 2inch SiC substrate wafer wafer Wax soo saarka heerka cilmi baarista

Substrate-ka Silicon carbide waxaa inta badan loo kala qaybiyaa nooca korantada iyo nooca-insulating, substrate-ka silikoon carbide ee nooca n-nooca waxaa inta badan loo adeegsadaa Epitaxial GaN-based LED iyo aaladaha kale ee optoelectronic, aaladaha elektiroonigga ah ee ku saleysan SiC, iwm. Intaa waxaa dheer, saafiga sare ee dahaadhka ah ee HPSI iyo SI semi-dahaarka ayaa ka duwan, saafiga sare-sare ee dahaadhka side-insulation-ka 3.5 * 1013 ~ 8 * 1015/cm3 kala duwan, oo leh dhaqdhaqaaqa elektarooniga sare; Semi-insulation waa maaddooyin iska caabin ah oo sarreeya, iska caabintu aad bay u sarraysaa, guud ahaan waxaa loo isticmaalaa substrates-ka aaladaha mikrowave-ka, aan shaqaynayn.

Waferka substrate-ka ah ee Silicon Carbide-dahadhka ah ee SiC wafer

Qaab dhismeedka kristal ee SiC wuxuu go'aamiyaa jirkiisa, marka loo eego Si iyo GaAs, SiC waxay u leedahay sifooyinka jirka; Baaxadda band ee mamnuuca ah waa mid weyn, oo ku dhow 3 jeer ka Si, si loo hubiyo in qalabku ku shaqeeyo heerkul sare oo hoos yimaada kalsoonida muddada-dheer; xoogga beerta burburku waa mid sare, waa 1O jeer ka mid ah Si, si loo hubiyo in awoodda danab qalabka, hagaajin qiimaha danab qalabka; heerka korantada korantada waa weyn yahay, waa 2 jeer ka Si, si loo kordhiyo inta jeer ee aaladda iyo cufnaanta awoodda; Heerarka kuleylku waa sarreeyaa, in ka badan Si, qulqulka kulaylku waa sarreeyaa, koorsada kulaylka ayaa sarreeya, ka-hortagga kuleylka ayaa sarreeya, ka badan Si, kuleylka kuleylka ayaa sarreeya. Dhaqdhaqaaqa kulaylka sare, in ka badan 3 jeer ka Si, kordhinta awoodda kulaylka ee qalabka iyo xaqiijinta yaraynta qalabka.