4H-semi HPSI 2inch SiC substrate wafer wafer Wax soo saarka heerka cilmi baarista
Substrate-ka silikoon carbide substrate-ka-dahaaran ee SiC
Substrate-ka Silicon carbide waxaa inta badan loo kala qaybiyaa nooca korantada iyo nus-insulating, substrate-ka silikoon carbide ee nooca n-nooca waxaa inta badan loo isticmaalaa LED-ka-ku-saleysan Epitaxial iyo aaladaha kale ee optoelectronic, aaladaha korantada ee SiC-ku-saleysan, iwm, iyo semi- Dahaarka SiC silikoon carbide substrate waxaa inta badan loo isticmaalaa soo saarista epitaxial ee aaladaha soo noqnoqda raadiyaha tamarta sare leh ee GaN. Intaa waxaa dheer ee nadiifinta-sare ee semi-dahaarka HPSI iyo SI semi-dahaarka waa ka duwan yahay,-nadiifinta sare-nadiifinta-xakamaynta-sare ee 3.5 * 1013 ~ 8 * 1015/cm3 kala duwan, oo leh dhaqdhaqaaqa elektarooniga sare; Semi-insulation waa maaddooyin iska caabin ah oo sarreeya, iska caabintu aad bay u sarraysaa, guud ahaan waxaa loo isticmaalaa substrates-ka aaladaha mikrowave-ka, aan shaqaynayn.
Waferka substrate-ka ah ee Silicon Carbide-dahadhka ah ee SiC wafer
Qaab dhismeedka kristal ee SiC wuxuu go'aamiyaa jirkiisa, marka loo eego Si iyo GaAs, SiC waxay u leedahay sifooyinka jirka; Baaxadda band ee mamnuuca ah waa mid weyn, oo ku dhow 3 jeer ka Si, si loo hubiyo in qalabku ku shaqeeyo heerkul sare oo hoos yimaada kalsoonida muddada-dheer; xoogga beerta burburku waa mid sare, waa 1O jeer ka mid ah Si, si loo hubiyo in awoodda danab qalabka, hagaajin qiimaha danab qalabka; heerka korantada korantada waa weyn yahay, waa 2 jeer ka Si, si loo kordhiyo inta jeer ee aaladda iyo cufnaanta awoodda; Heerarka kuleylku waa sarreeyaa, in ka badan Si, qulqulka kulaylku waa sarreeyaa, koorsada kulaylka ayaa sarreeya, ka-hortagga kuleylka ayaa sarreeya, ka badan Si, kuleylka kuleylka ayaa sarreeya. Dhaqdhaqaaqa kulaylka sare, in ka badan 3 jeer ka Si, kordhinta awoodda kulaylka ee qalabka iyo xaqiijinta yaraynta qalabka.