3inch SiC substrate Production Dia76.2mm 4H-N

Sharaxaad Gaaban:

3-inji Silicon Carbide 4H-N wafer waa wax horumarsan oo semiconductor ah, si gaar ah loogu talagalay waxqabadka sare ee elektiroonigga ah iyo codsiyada indhaha ee indhaha. .


Faahfaahinta Alaabta

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Tilmaamaha ugu muhiimsan ee 3 inch silicon carbide mosfet wafers waa sida soo socota;

Silicon Carbide (SiC) waa qalab semiconductor ah oo ballaadhan, oo lagu garto dhaqdhaqaaqa kulaylka sare, dhaqdhaqaaqa elektarooniga ah, iyo burbur sare oo xoog koronto ah. Guryahani waxay ka dhigaan waferrada SiC kuwo aad u wanaagsan oo awood sare leh, soo noqnoqonaya, iyo codsiyo heerkul sare ah. Gaar ahaan 4H-SiC polytype, qaab-dhismeedkeeda crystal-ka ayaa bixiya waxqabadka elektiroonigga ah ee aad u fiican, taas oo ka dhigaysa walxaha doorashada ee qalabka elektiroonigga ah.

3-inji Silicon Carbide 4H-N wafer waa wafer nitrogen-doped leh oo leh N-nooca korantada. Habkan doping-ga ah waxa uu siinayaa wafer-ka fiirsi elektaroonig ah oo sarreeya, si kor loogu qaado waxqabadka qalabka. Cabbirka waferka, ee 3 inji (dhexroorka 76.2 mm), waa cabbir caadi ahaan loo isticmaalo warshadaha semiconductor, oo ku habboon hababka wax soo saarka ee kala duwan.

3-inch Silicon Carbide 4H-N wafer waxaa la soo saaray iyadoo la adeegsanayo habka uumiga Jirka (PVT). Nidaamkani wuxuu ku lug leeyahay u beddelashada budada SiC ee hal kiristaalo oo heerkul sare leh, hubinta tayada kristanta iyo isku midka ah ee waferka. Intaa waxaa dheer, dhumucdiisuna waxay caadi ahaan ku dhowdahay 0.35 mm, oogada sarena waxaa lagu sakhraamay naaxinta laba-geesoodka ah si loo gaaro heer aad u sarreeya oo siman iyo siman, taas oo muhiim u ah hababka wax soo saarka semiconductor ee xiga.

Kala duwanaanshaha arjiga ee 3-inji Silicon Carbide 4H-N wafer waa mid ballaaran, oo ay ku jiraan aaladaha elektiroonigga ah ee awoodda sare leh, dareemayaasha heerkulka sare, aaladaha RF, iyo aaladaha indhaha. Waxqabadkeeda aadka u wanaagsan iyo isku halaynta waxay awood u siinaysaa aaladahaan inay si degan ugu shaqeeyaan xaalado aad u daran, iyagoo buuxinaya baahida agabka wax-qabadka sare leh ee semiconductor ee warshadaha elektiroonigga ah ee casriga ah.

Waxaan ku siin karnaa 4H-N 3inch substrate SiC, darajooyin kala duwan ee maraqa substrate-ka. Waxa kale oo aanu diyaarin karnaa habayn ku salaysan baahidaada. Weydiinta soo dhawoow!

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