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200mm SiC substrate-ka ah ee heerka 4H-N 8inch SiC wafer

200mm SiC substrate-ka ah ee heerka 4H-N 8inch SiC wafer Sawir Gaar ah
  • 200mm SiC substrate-ka ah ee heerka 4H-N 8inch SiC wafer
  • 200mm SiC substrate-ka ah ee heerka 4H-N 8inch SiC wafer
  • 200mm SiC substrate-ka ah ee heerka 4H-N 8inch SiC wafer

Sharaxaad Gaaban:

Substrate-ka carbide-ka ee silikoon oo dhexroorkiisu yahay 8 inji (qiyaastii 200 mm). Substrate-ka carbide-ka ee silikoon (SiC) waa walax muhiim u ah soo saarista aaladaha korontada iyo aaladaha optoelectronic-ka. Substrate-ka SiC ee 8-inji ah ayaa si caadi ah loogu isticmaalaa soo saarista aaladaha elektaroonigga ah ee awoodda sare leh sida MOSFET-yada awoodda leh, diode-yada awoodda leh, iyo aaladaha kale ee awoodda sare leh. Substrate-kan cabbirka weyn wuxuu hagaajin karaa hufnaanta wax soo saarka, wuxuu yareyn karaa kharashyada wax soo saarka, wuxuuna gacan ka geysan karaa soo saarista aaladaha awoodda badan leh. Walxaha carbide-ka ee silikoon wuxuu leeyahay hufnaan kuleyl oo heer sare ah, iska caabin heerkul sare iyo iska caabin shucaac, taasoo ka dhigaysa doorasho ku habboon soo saarista aaladaha awoodda sare leh.


Astaamaha

Dhibaatooyinka farsamo ee soo saarista substrate-ka 8-inji ee SiC waxaa ka mid ah:

1. Kobaca Crystal: Gaaritaanka koboc tayo sare leh oo keli ah oo ah silicon carbide dhexroor weyn leh waxay noqon kartaa mid adag sababtoo ah xakamaynta cilladaha iyo wasakhda.

2. Habaynta Wafer-ka: Cabbirka weyn ee wafer-ka 8-inji ah wuxuu soo bandhigayaa caqabado ku saabsan isku-midnimada iyo xakamaynta cilladaha inta lagu jiro habaynta wafer-ka, sida nadiifinta, xoqidda, iyo daawada.

3. Isku-mid ahaanshaha Qalabka: Hubinta sifooyinka walxaha ee joogtada ah iyo isku-mid ahaanshaha dhammaan substrate-ka SiC ee 8-inch waa mid farsamo ahaan u baahan waxayna u baahan tahay xakameyn sax ah inta lagu jiro habka wax soo saarka.

4. Qiimaha: Kor u qaadista ilaa 8-inji ah ee walxaha SiC iyadoo la ilaalinayo tayada iyo wax soo saarka sare waxay noqon kartaa mid dhaqaale ahaan adag sababtoo ah dhibka iyo kharashka hababka wax soo saarka.

5. Wax ka qabashada dhibaatooyinkan farsamo ayaa muhiim u ah qaadashada baahsan ee substrates-ka 8-inji ee SiC ee ku jira aaladaha awoodda sare leh iyo kuwa elektaroonigga ah.

Waxaan ka helnaa walxaha sapphire-ka ah warshadaha ugu horreeya ee Shiinaha ee SiC ee dhoofinta oo ay ku jiraan Tankeblue. In ka badan 10 sano oo hay'ad ah ayaa noo ogolaatay inaan xiriir dhow la yeelanno warshadda. Waxaan ku siin karnaa walxaha 6-inch iyo 8-inchSiC ee aad u baahan tahay si aad u hesho sahay muddo dheer ah oo deggan iyadoo la bixinayo qiimaha iyo qiimaha ugu fiican.

Tankeblue waa shirkad tiknoolajiyad sare leh oo ku takhasustay horumarinta, soo saarista iyo iibinta jajabyada jiilka saddexaad ee semiconductor silicon carbide (SiC). Shirkaddu waa mid ka mid ah soosaarayaasha ugu horreeya adduunka ee SiC wafers.

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